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Book Metal oxide semiconductor Field effect Transistors in Digital Circuits

Download or read book Metal oxide semiconductor Field effect Transistors in Digital Circuits written by G. Donald Wagner and published by . This book was released on 1966 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: The metal-oxide-semiconductor field-effect transistor (Mos Fet) is evaluated for use in digital circuitry. The basic building block, the digital inverter, is described and analyzed for four types of loading. The loads considered are: resistor load, enhancement mode MOS Fet load, depletion mode MOS Fet load, and complementary MOS Fet Load. Characteristics such as load line characteristics, power dissipation, transfer characteristics, and transient performance are discussed and compared. Equations describing the characteristics of each circuit have been derived and verified experimentally. The results clearly indicate the superior electrical characteristics of the complementary circuits. A typical complementary MOS Flip-Flop capable of one MHz operation is illustrated. (Author).

Book GaSb P channel Metal oxide semiconductor Field effect Transistor and Its Temperature Dependent Characteristics  Project Supported by the National Basic Research Program of China  Grant No  2011CBA00602  and the National Science and Technology Major Project of the Ministry of Science and Technology of China  Grant No  2011ZX02708 002

Download or read book GaSb P channel Metal oxide semiconductor Field effect Transistor and Its Temperature Dependent Characteristics Project Supported by the National Basic Research Program of China Grant No 2011CBA00602 and the National Science and Technology Major Project of the Ministry of Science and Technology of China Grant No 2011ZX02708 002 written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: GaSb p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with an atomic layer deposited Al2 O3 gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two temperature regions, and the underlying mechanisms are discussed. It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current, which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions. Methods to further reduce the off-state drain leakage current are given.

Book Fundamentals of III V Semiconductor MOSFETs

Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Book Field Effect Transistors  A Comprehensive Overview

Download or read book Field Effect Transistors A Comprehensive Overview written by Pouya Valizadeh and published by John Wiley & Sons. This book was released on 2016-02-01 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.

Book Mosfet in Circuit Design  Metal oxide semiconductor Field effect Transistors for Discrete and Integrated circuit Technology

Download or read book Mosfet in Circuit Design Metal oxide semiconductor Field effect Transistors for Discrete and Integrated circuit Technology written by Robert H. Crawford and published by . This book was released on 1967 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Fundamentals of Solid State Electronics

Download or read book Fundamentals of Solid State Electronics written by Chih-Tang Sah and published by World Scientific Publishing Company. This book was released on 1991-10-30 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is perhaps the most comprehensive undergraduate textbook on the fundamental aspects of solid state electronics. It presents basic and state-of-the-art topics on materials physics, device physics, and basic circuit building blocks not covered by existing textbooks on the subject. Each topic is introduced with a historical background and motivations of device invention and circuit evolution. Fundamental physics is rigorously discussed with minimum need of tedious algebra and advanced mathematics. Another special feature is a systematic classification of fundamental mechanisms not found even in advanced texts. It bridges the gap between solid state device physics covered here with what students have learnt in their first two years of study. Used very successfully in a one-semester introductory core course for electrical and other engineering, materials science and physics junior students, the second part of each chapter is also used in an advanced undergraduate course on solid state devices. The inclusion of previously unavailable analyses of the basic transistor digital circuit building blocks and cells makes this an excellent reference for engineers to look up fundamental concepts and data, design formulae, and latest devices such as the GeSi heterostructure bipolar transistors. This book is also available as a set with Fundamentals of Solid-State Electronics — Study Guide and Fundamentals of Solid-State Electronics — Solution Manual.

Book Electrical Properties of Indium Arsenide Nanowires and Their Field Effect Transistors

Download or read book Electrical Properties of Indium Arsenide Nanowires and Their Field Effect Transistors written by Mengqi Fu and published by Springer. This book was released on 2018-11-29 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.

Book Organic Field Effect Transistors

Download or read book Organic Field Effect Transistors written by Ioannis Kymissis and published by Springer Science & Business Media. This book was released on 2008-12-25 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.

Book Electrical Properties of Materials

Download or read book Electrical Properties of Materials written by Laszlo Solymar and published by Oxford University Press. This book was released on 2018-09-13 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: An informal and highly accessible writing style, a simple treatment of mathematics, and clear guide to applications have made this book a classic text in electrical and electronic engineering. The fundamental ideas relevant to the understanding of the electrical properties of materials are emphasized; in addition, topics are selected in order to explain the operation of devices having applications (or possible future applications) in engineering. The mathematics, kept deliberately to a minimum, is well within the grasp of undergraduate students. This is achieved by choosing the simplest model that can display the essential properties of a phenomenom, and then examining the difference between the ideal and the actual behaviour. The whole text is designed as an undergraduate course. However most individual sections are self contained and can be used as background reading in graduate courses, and for interested persons who want to explore advances in microelectronics, lasers, nanotechnology, and several other topics that impinge on modern life.

Book Handbook of Nanophysics

    Book Details:
  • Author : Klaus D. Sattler
  • Publisher : CRC Press
  • Release : 2010-09-17
  • ISBN : 1420075519
  • Pages : 782 pages

Download or read book Handbook of Nanophysics written by Klaus D. Sattler and published by CRC Press. This book was released on 2010-09-17 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt: Many bottom-up and top-down techniques for nanomaterial and nanostructure generation have enabled the development of applications in nanoelectronics and nanophotonics. Handbook of Nanophysics: Nanoelectronics and Nanophotonics explores important recent applications of nanophysics in the areas of electronics and photonics. Each peer-reviewed c

Book Field effect Transistor Biosensors for Rapid Pathogen Detection

Download or read book Field effect Transistor Biosensors for Rapid Pathogen Detection written by Naif H M Al-Hardan and published by Royal Society of Chemistry. This book was released on 2024-05-03 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: Looking to prevent future outbreaks of deadly pathogens by early detection? Infectious diseases continue to be a challenge that necessitates increased precision in detection and integration to achieve accurate diagnosis at the point of care (PoC). Field-effect transistors (FETs) have been investigated widely as biosensors for pathogen detection, with advantages such as label-free and real-time detection capabilities. These biosensors have: a high level of sensitivity, a remarkable capacity for miniaturization, a molecular minimum limit of detection (LoD), and seamless integration with semiconductor technology In this title, we have invited expert scientific researchers to share their experience in this field. This book focuses on the application and possibility of FETs as biosensors, for rapid and real time detection of pathogens that affect human life. The lack of commercially available efficient devices that can be deployed for this task resulted in the recent global spread of the SARS-CoV-19 virus. The book is an attempt to keep interested parties up to date. Aimed at scientists and engineers (researchers, academics, and postgraduate students) who are interested in developing and using BioFET based sensors, the information in this book is crucial to help prevent future outbreaks of pathogens which bring with them significant impacts on human health and wellbeing.

Book Micro  and Macromechanical Properties of Materials

Download or read book Micro and Macromechanical Properties of Materials written by Yichun Zhou and published by CRC Press. This book was released on 2013-09-26 with total page 622 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an English translation of a Chinese textbook that has been designated a national planned university textbook, the highest award given to scientific textbooks in China. The book provides a complete overview of mechanical properties and fracture mechanics in materials science, mechanics, and physics. It details the macro- and micro-mechanical properties of metal structural materials, nonmetal structural materials, and various functional materials. It also discusses the macro and micro failure mechanism under different loadings and contains research results on thin film mechanics, smart material mechanics, and more.

Book Proceedings of Mechanical Engineering Research Day 2016

Download or read book Proceedings of Mechanical Engineering Research Day 2016 written by Mohd Fadzli Bin Abdollah and published by Centre for Advanced Research on Energy. This book was released on 2016-03-31 with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt: This e-book is a compilation of papers presented at the Mechanical Engineering Research Day 2016 (MERD'16) - Melaka, Malaysia on 31 March 2016.

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1989 with total page 1134 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book 2019 International Conference on Advanced Electrical Engineering  ICAEE

Download or read book 2019 International Conference on Advanced Electrical Engineering ICAEE written by and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Oxide Electronics

Download or read book Oxide Electronics written by Asim K. Ray and published by John Wiley & Sons. This book was released on 2021-04-12 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.