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Book Electrical Characterisation of Plasma Processing Induced Defects in Silicon

Download or read book Electrical Characterisation of Plasma Processing Induced Defects in Silicon written by Prakash Narayen Kripalini Deenapanray and published by . This book was released on 1997 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Science and Technology of Defects in Silicon

Download or read book Science and Technology of Defects in Silicon written by C.A.J. Ammerlaan and published by Elsevier. This book was released on 2014-01-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.

Book Plasma Processing XII

    Book Details:
  • Author : G. S. Mathad
  • Publisher : The Electrochemical Society
  • Release : 1998
  • ISBN : 9781566771986
  • Pages : 308 pages

Download or read book Plasma Processing XII written by G. S. Mathad and published by The Electrochemical Society. This book was released on 1998 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Effect of Disorder and Defects in Ion Implanted Semiconductors  Optical and Photothermal Characterization

Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Book Plasma Process induced Defects of Cz silicon During Oxide Over etch

Download or read book Plasma Process induced Defects of Cz silicon During Oxide Over etch written by Keith Michael Jarreau and published by . This book was released on 2002 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Electrical Characterization of Silicon on Insulator Materials and Devices

Download or read book Electrical Characterization of Silicon on Insulator Materials and Devices written by Sorin Cristoloveanu and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

Book Plasma Processing of Materials

Download or read book Plasma Processing of Materials written by National Research Council and published by National Academies Press. This book was released on 1991-02-01 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma processing of materials is a critical technology to several of the largest manufacturing industries in the worldâ€"electronics, aerospace, automotive, steel, biomedical, and toxic waste management. This book describes the relationship between plasma processes and the many industrial applications, examines in detail plasma processing in the electronics industry, highlights the scientific foundation underlying this technology, and discusses education issues in this multidisciplinary field. The committee recommends a coordinated, focused, and well-funded research program in this area that involves the university, federal laboratory, and industrial sectors of the community. It also points out that because plasma processing is an integral part of the infrastructure of so many American industries, it is important for both the economy and the national security that America maintain a strong leadership role in this technology.

Book Defects in Semiconductors 16  Proceedings of the International Conference  16th  Held in Bethlehem  Pennsylvania on 22 26 July 1991

Download or read book Defects in Semiconductors 16 Proceedings of the International Conference 16th Held in Bethlehem Pennsylvania on 22 26 July 1991 written by and published by . This book was released on 1992 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: Partial contents include: (1) Atomic defect configuration identified by nuclear techniques; (2) Combination of deep level transient spectroscopy; (3) Microscopy of Frenkel pairs in semiconductors by nuclear techniques; (4) Muon stopping sites in semiconductors from decay positron channeling; (5) Polarized spectroscopy of complex luminescence centers; (6) A re-evaluation of electric field enhanced emission measurements for use in type and charge state determination; (7) X ray spectroscopy following neutron irradiation of semi- conductor silicon; (8) Transition metals in silicon carbide (SiC) : vanadium and titanium; (9) Photoluminescence excitation spectroscopy of cubic SiC grown by chemical vapor deposition on Si substrates; (10) Luminescence and absorption of vanadium in 6H SiC; (11) Impurity defect reactions in ion implanted diamond; (12) Electron trapping defects in MBE-grown relaxed n-In0.05- Ga0.95 As on gallium arsenide; (13) Scanning tunneling microscopy studies of semiconductor surface defects; (14) Photoluminescence characterisation of the silicon surface exposed to plasma treatment; (15) An analysis of point defect fluxes during silicon dioxide precipitation in silicon; (16) Electrical properties of oxidation-induced stacking faults in n-type silicon; (17) Morphology change of oxygen precipitates in CZ-Si wafers during two-step heat-treatment; (18) Ion implantation induced sheet stress due to defects in thin (100) silicon films; and (19) Hydrogen induced defects and defect passivation in silicon solar cells.

Book Electrical Characterization of Plasma Bonded Silicon on Insulator

Download or read book Electrical Characterization of Plasma Bonded Silicon on Insulator written by Peter John Bjeletich and published by . This book was released on 1999 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Failure Analysis

Download or read book Failure Analysis written by Marius Bazu and published by John Wiley & Sons. This book was released on 2011-03-08 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.

Book C  H  N and O in Si and Characterization and Simulation of Materials and Processes

Download or read book C H N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by Newnes. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Book Crystalline Defects and Contamination

Download or read book Crystalline Defects and Contamination written by Bernd O. Kolbesen and published by The Electrochemical Society. This book was released on 2005 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Energy Research Abstracts

Download or read book Energy Research Abstracts written by and published by . This book was released on 1995 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book JJAP

    Book Details:
  • Author :
  • Publisher :
  • Release : 2008
  • ISBN :
  • Pages : 1450 pages

Download or read book JJAP written by and published by . This book was released on 2008 with total page 1450 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Research and Technology Program Digest Flash Index

Download or read book Research and Technology Program Digest Flash Index written by and published by . This book was released on 1967 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Solar Energy Update

Download or read book Solar Energy Update written by and published by . This book was released on 1981 with total page 558 pages. Available in PDF, EPUB and Kindle. Book excerpt: