EBookClubs

Read Books & Download eBooks Full Online

EBookClubs

Read Books & Download eBooks Full Online

Book Properties Processing and Applications of Indium Phosphide

Download or read book Properties Processing and Applications of Indium Phosphide written by T. P. Pearsall and published by Inst of Engineering & Technology. This book was released on 2000-01 with total page 279 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation This collection of 49 papers identifies the significant advances and distills the current knowledge from the literature which has been published on indium phosphate (InP) in the last ten years. The major areas of discussion are the importance on InP properties in devices; mechanical, thermal, piezoelectric and electro-optic properties; electronic transport properties; band structure; optical properties; defects, deep levels and their detection; and processing technologies. Topics include InP-based alloys as optical amplifiers and lasers, electron and hole mobilities in InP, conduction band and valance band offsets at various InP/semiconductor interfaces, defect energy levels in irradiated or implanted InP, and etching of InP. Some of the material is reprinted from published in 1991. Distributed by INSPEC. Annotation c. Book News, Inc., Portland, OR (booknews.com)

Book Properties of Gallium Arsenide

Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Semi Insulating III V Materials

Download or read book Semi Insulating III V Materials written by REES and published by Birkhäuser. This book was released on 1980 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.

Book Technical Abstract Bulletin

Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 992 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide

Download or read book Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide written by Richard Dana Pashley and published by . This book was released on 1974 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.

Book Optical Properties of Ion implanted Impurities in Gallium Nitride

Download or read book Optical Properties of Ion implanted Impurities in Gallium Nitride written by R D. Metcalfe and published by . This book was released on 1976 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Gallium Arsenide Technology

Download or read book Gallium Arsenide Technology written by David K. Ferry and published by Sams Technical Publishing. This book was released on 1985 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Diffusion and Electrical Properties of Sulfur Implanted in Gallium Arsenide

Download or read book Diffusion and Electrical Properties of Sulfur Implanted in Gallium Arsenide written by Siu Sing Chan and published by . This book was released on 1983 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the need for high speed devices and circuits continues to grow, GaAs has received increasing attention as a viable (both technologically and economically) electronic material complementary to Si. The advantages of GaAs lie in its much higher electron mobility and its compatibility with optoelectronic devices. The merits of a planar process have been well demonstrated in Si technology, and in the course of the development of a similar process for GaAs, ion implantation has emerged as an indispensable tool. Ion implantation is inherently a much more precise and controllable method of selective semiconductor doping than diffusion. To attain the degree of line-width control necessary for high speed or high density devices, ion implantation is a prerequisite. Besides, many useful dopants in GaAs cannot be introduced readily by diffusion because of material constraints. In spite of its importance in the fabrication of devices which take advantage of the high electron mobility of GaAs, donor implantation in GaAs has not found as much success as acceptor implantations. In order to avoid amphoteric tendencies and possible self-compensation mechanisms, it is generally best to use a column VI element.

Book An Investigation of Temperature Dependence of Electrical Properties in Ion implanted Gallium Arsenide

Download or read book An Investigation of Temperature Dependence of Electrical Properties in Ion implanted Gallium Arsenide written by A. K. M. Matior Rahman and published by . This book was released on 1986 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Masters Theses in the Pure and Applied Sciences

Download or read book Masters Theses in the Pure and Applied Sciences written by W. H. Shafer and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 307 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and dis seminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the ac tivity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volume were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 24 (thesis year 1979) a total of 10,033 theses titles from 26 Canadian and 215 United States universities. We are sure that this broader base for theses titles reported will greatly enhance the value of this important annual reference work. While Volume 24 reports these submitted in 1979, on occasion, certain universities do report theses submitted in previous years but not reported at the time.

Book Gallium Arsenide and Related Compounds

Download or read book Gallium Arsenide and Related Compounds written by and published by . This book was released on 1986 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt: