Download or read book Electrical and Optical Characterization of Group III nitride Alloys for Solar Energy Conversion written by Rebecca Elizabeth Jones and published by . This book was released on 2008 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Group III Nitrides written by James H. Edgar and published by Institution of Electrical Engineers. This book was released on 1994 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: The group III nitrides are playing an increasingly important role in the development of commercially viable microelectronic and optoelectronic devices. This volume provides reviews and evaluations of the group, in addition to guidance on the current reference literature.

Download or read book Optical Properties of Group III Nitride Alloys written by Tao Peng and published by . This book was released on 1997 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dilute III V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer Science & Business Media. This book was released on 2008-01-12 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.

Download or read book Dilute III V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer. This book was released on 2009-09-02 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.

Download or read book III nitride Semiconductors written by Mahmoud Omar Manasreh and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nitrogen Induced Modification of the Electronic Structure of Group III N V Alloys Preprint written by and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Incorporation of nitrogen in conventional III-V compound semiconductors to form III-N-V alloys leads to a splitting of the conduction band into two nonparabolic sub-bands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lowersub-band edge is responsible for the N-induced reduction of the fundamental band-gap energy. The modification of the conduction-band structure profoundly affects the optical and electrical properties of the III-N-V alloys.

Download or read book Physical Model and Applications of High Efficiency Electro Optical Conversion Devices written by Feng Chi and published by Frontiers Media SA. This book was released on 2022-02-02 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Innovative Growth and Defect Analysis of Group III Nitrides for High Speed Electronics written by and published by . This book was released on 2008 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: The project focused on novel techniques in growth and characterization which may enhance group III - nitride applications. On the growth side nitride deposition on diamond templates was characterized as the most promising novel growth techniques. The continuing progress can be supported applying the novel characterization technique described below. Local inhomogeneities are a common feature in group III - nitrides. With standard characterization methods such materials cannot be properly evaluated. Multiple group III - nitride epilayers were investigated utilizing VEELS in combination with high resolution TEM in order to characterize the materials in high spatial and energy resolution. It was found that possible side effects such as sample damage due to electron irradiation or falsified results due to retardation effects can be avoided if proper sample treatment is applied. It is assumed that the occurrence of local electronic transitions in close vicinity to interfaces is due to the presence of local point or surface defects. For the first time it may become possible to investigate the impact of such defects on the performance of devices. For the InGaN alloy system nano-cluster formation which changes optical responses was investigated. It was found that the III-V compound InN exists as a composite InN:In material. InN commonly exhibits multiple optical responses including an interface and/or surface related effect, which triggered confusing scientific models in the past. The prospect of exploiting multiple energy transitions within ONE material offers completely new alternatives for novel device development.

Download or read book Optical Structural and Electrical Properties of Group III Nitrides written by ICNS (3, 1999, Montpellier) and published by . This book was released on 1999 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Wide Bandgap Semiconductor Materials and Devices 16 written by S. Jang and published by The Electrochemical Society. This book was released on 2015 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Download or read book Electrical and Optical Properties of Indium Nitride and Indium rich Nitrides Prepared by Molecular Beam Epitaxy for Opto electronics Applications written by Hai Lu and published by . This book was released on 2003 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Download or read book Nanowires written by Anqi Zhang and published by Springer. This book was released on 2016-07-26 with total page 327 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive summary of nanowire research in the past decade, from the nanowire synthesis, characterization, assembly, to the device applications. In particular, the developments of complex/modulated nanowire structures, the assembly of hierarchical nanowire arrays, and the applications in the fields of nanoelectronics, nanophotonics, quantum devices, nano-enabled energy, and nano-bio interfaces, are focused. Moreover, novel nanowire building blocks for the future/emerging nanoscience and nanotechnology are also discussed.Semiconducting nanowires represent one of the most interesting research directions in nanoscience and nanotechnology, with capabilities of realizing structural and functional complexity through rational design and synthesis. The exquisite control of chemical composition, morphology, structure, doping and assembly, as well as incorporation with other materials, offer a variety of nanoscale building blocks with unique properties.

Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.