Download or read book Efficiency Enhancement of Copper Indium Gallium Di selenide Thin Film Solar Cell Using Optimez Material Propeties written by Nima Khoshsirat and published by . This book was released on 2014 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical and Photovoltaic Properties of Copper Indium gallium Diselenide Materials and Solar Cells written by Puruswottam Aryal and published by . This book was released on 2014 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: The demand for clean and renewable energy sources in recent years has motivated research on the development of low cost, thin film photovoltaic devices. As a consequence, tools for the investigation and characterization of thin film photovoltaic component materials and devices, which can be implemented in real time as well as under in-line and off-line measurement conditions, are becoming increasingly important. Real time spectroscopic ellipsometry (RTSE) and ex-situ mapping spectroscopic ellipsometry (SE) are powerful characterization tools suitable for applications in the optimization of device performance and the evaluation of thin film photovoltaics technology scale-up from dot cell sizes in research laboratories to full module sizes in factories. These non-destructive optical probes implement multichannel spectroscopic detection for achieving high measurement speed, while simultaneously yielding high precision light-matter interaction parameters. The interaction parameters can be analyzed to obtain layer thicknesses as well as their optical properties from which material properties such as composition can be determined. The layer thicknesses and their optical properties in turn provide insights into the fraction of incident light absorbed in the active layer of the solar cell and also provide a basis for short-circuit current optimization through optical simulations. In this dissertation research, Cu(In, Ga)Se2 films with different Ga contents have been prepared by a one stage co-evaporation process. These films have been studied by spectroscopic ellipsometry (RTSE) in real time during their deposition, which has been performed at high temperature (570oC). After cooling the films to room temperature, in-situ SE measurements were undertaken in order to extract the dielectric functions of the thin film materials. An extended parameterization was established through the fitting of these dielectric functions to analytical functions, followed by the development of expressions in the free parameters that describe these analytical functions versus the Ga content. As a result of this parameterization, dielectric function spectra can be predicted for any desired composition. This capability was applied for the structural and compositional mapping of CIGS thin films and solar cells deposited over 10 cm × 10 cm substrate areas. Correlations of the deduced structural and compositional parameters with the corresponding device performance characteristics have yielded important insights with the potential to assist in the optimization of solar cell devices incorporating thin CIGS layers. In addition, a methodology of external quantum efficiency simulation (EQE) has been developed that relies on ex-situ spectroscopic ellipsometry analysis of complete thin film solar cells and so does not require free parameters. The simulations have been applied to CIGS and a-Si:H solar cells, based on the assumption that all photo-generated carriers within the active layers of these cells are collected without any recombination losses. Thus, it should be noted the predicted EQE is the maximum that the solar cell having the given structure can generate, and the difference between the predicted and measured EQE for the same device can provide insights into recombination losses in the device. Because the predicted EQE is based on specular interfaces, it can also be lower than the measured values due to light trapping caused by rough surfaces and interfaces. In another research area of interest for CIGS materials and solar cells, the role of the stage II/III substrate temperature (540oC - 640oC) in the deposition of the films by the three stage process has been studied, as has its effect on device performance, sodium diffusion, and grain size. Since standard soda-lime glass does not tolerate temperatures above 570oC due to glass softening, specially engineered high temperature soda-lime glass produced by Nippon Electric Glass Co., Japan was used as the substrate material in this study. It was found that the average device performance improves up to 620oC as a consequence of reduced shunting and improved diode quality factor which affect the fill factor of the device. At 640oC, however, these parameters have exhibited a wider distribution, and thus have yielded a lower average efficiency for the cells. SEM micrographs of these devices showed that the grain size first increased with increasing temperature up to 620oC, and then showed a bimodal distribution at 640oC. Finally, ex-situ mapping ellipsometry has been applied in the study of silver nanoparticle thin films prepared by the drop casting method. These films are important because of the plasmonic effects they exhibit. Such effects can be exploited by integrating the nanoparticle layers into solar cells in order to promote light trapping, and hence, increase the overall efficiency of the cells. A study of these films with mapping spectroscopic ellipsometry provides a means of determining thickness uniformity over large areas that is critical for scale-up of the deposition processes. The uniformity of other parameters of the films such as the plasmon resonance energy and its broadening are equally important to ensure maximum coupling of light into the solar cell absorber layer.

Download or read book Chemical and Electronic Characterization of Copper Indium Gallium Diselenide Thin Film Solar Cells and Correlation of These Characteristics to Solar Cell Operation written by Michael Justin Hetzer and published by . This book was released on 2009 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: This dissertation embodies solid state physics research to understand the basic physical mechanisms underlying the movement of charge inside solar cells, in particular, the high efficiency copper indium gallium diselenide (CIGS) solar cell. The fundamental physics of the operation of these complex polycrystalline alloys remains incompletely understood. CIGS based solar cells have obtained conversion efficiencies of nearly 20%. Solar cells based on this material have been examined in this work using high resolution, atomic scale techniques to better understand the fundamental operation of these solar cells as well as correlating these basic properties to the operation of the finished full solar cell devices. Auger Electron Spectroscopy (AES) measurements of the chemical composition taken with nanometer resolution in an ultra high vacuum secondary electron microscope show evidence for compositional changes at the grain boundaries of the CIGS layer. These findings support theoretical calculations that predict higher solar cell performance as a result. Additionally, measurements have been taken with cathodoluminescence spectroscopy (CLS) studying the band structure locally within the CIGS layers. Significant variation is present in the resulting spectra, even within single grains indicating improved uniformity could be a path to better solar cell operation. Attempts to correlate the chemical composition and the energy band structure using AES and CLS measurements have yielded some interesting initial results but more work remains to be done to obtain a deeper understanding of the physics involved in these solar cells. Correlations have been observed between the energy band structure and the performance parameters of the solar cell, such as efficiency. These results indicate the possibility of alloying between the different layers of the solar cell and also that this intermixing is detrimental to the performance of the solar cell. This work has revealed important fundamental characteristics of these materials regarding changes in the atomic composition and energy band structure and how these changes influence the performance of the CIGS layer.

Download or read book Characterization of Photocurrent and Voltage Limitations of Copper indium Gallium selenide Thin film Polycrystalline Solar Cells written by Christopher P. Thompson and published by ProQuest. This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film polycrystalline CdS/Cu(In, Ga)(Se, S) 2 solar cells have great potential as a candidate for high efficiency, high throughput, low cost production. Cu(In, Ga)Se 2 devices have laboratory efficiencies approaching 20% and module efficiencies around 11%. However, most progress in device optimization has been the result of empirical studies; little is known about the device defect structure, and even less is known about the control of defects within the Cu(In, Ga)(Se, S) 2 absorber. Despite years of study, the complex nature of the Cu(In, Ga)(Se, S) 2 system has made progress towards a fundamental understanding of device behavior, and limiting defects a slow affair. The goal of this work is to shed further light on the nature of the limitations on photocurrent and voltage. The main topics covered in this thesis are: (1) fitting quantum efficiency curves calculated from an analytical model to measured quantum efficiency curves, and (2) Open circuit voltage temperature measurements. For the first section, series of devices with varying absorber layers will be analyzed, using the minority carrier diffusion length as the only fitting parameter. All other variables within the model will be supplied from direct and indirect measurements. We show that by using quantum efficiency, capacitance-voltage, and current-voltage measurements, we can generate excellent fits using only diffusion length as a fitting parameter. It is found that for Cu(In, Ga)Se 2 devices with E G [approximate]1.2eV, L=1000-1500nm.; for wide bandgap devices, with E G [approximate]1.4eV, L=10-400nm; for devices with E G [approximate]1.2eV, deposited with a low substrate temperature, L=650nm. Wide bandgap devices long wavelength collection is limited by minority carrier diffusion. For the second section, V OC (T) measurements are taken on devices with a wide range of absorbers, including some previously un-measured devices; absorbers grown with a Na deficiency. Analysis will focus on the activation energy of the dominant recombination mechanism, as well as low temperature saturation of V OC . Both of these parameters shed light on the limiting properties of devices. Cu(In, Ga)Se 2 with bandgap ranging from 1.2eV-1.4eV are limited by Shockley Read Hall recombination, and have a ratio of saturation voltage to bandgap of 80%. Lowering the electrical quality of the absorber by depositing the Cu(In, Ga)Se 2 layer at lower substrate temperature decreases the ratio of saturation voltage to bandgap to 64%, as a result of increased bandtail defect states. CuInS 2 devices and Cu(In, Ga)Se 2 devices with low or no Na are limited by hetero-interface recombination, and have a saturation voltage to bandgap ratio of ~60%.

Download or read book Advances in Thin Film Solar Cells written by I. M. Dharmadasa and published by CRC Press. This book was released on 2018-09-05 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solar energy conversion plays a very important role in the rapid introduction of renewable energy, which is essential to meet future energy demands without further polluting the environment, but current solar panels based on silicon are expensive due to the cost of raw materials and high energy consumption during production. The way forward is to move towards thin-film solar cells using alternative materials and low-cost manufacturing methods. The photovoltaic community is actively researching thin-film solar cells based on amorphous silicon, cadmium telluride (CdTe), copper indium gallium diselenide (CIGS), and dye-sensitised and organic materials. However, progress has been slow due to a lack of proper understanding of the physics behind these devices. This book concentrates on the latest developments and attempts to improve our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. The author extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multi-layer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system, and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible and infra-red) within the solar spectrum and combine "impact ionisation" and "impurity photovoltaic" effects. The improved device understanding presented in this book should impact and guide future photovoltaic device development and low-cost thin-film solar panel manufacture. This new edition features an additional chapter besides exercises and their solutions, which will be useful for academics teaching in this field.

Download or read book New Materials for Thin Film Solar Cells written by Senthil T S and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film technology has a world-wide reputation in the field of thin film deposition process and also it paves a way for innovative techniques in large scale applications. Modern thin film technology has evolved into a sophisticated way to increase the performance and esthetic value for making new functional devices. One such application is search of new materials for thin film solar cells as it provides the solution for the today,Äôs concern of energy crisis. Depending on the processing technology solar cells are of various types. Among them, silicon wafer solar cells and thin film solar cells are most promising. Thin film technology has made solar cells more feasible to be employed in terms of device design and fabrication. The efficiencies produced by these solar cells still need to be improved. For this many investigations for further improvement from CIGS (copper indium gallium selenide) solar cell to dye sensitized solar cells and perovskite solar cells. Due to toxic nature and environmental impact the use of lead in perovskite solar cells are replaced by tin or some materials which would equalize the achieved efficiency of lead. Hence the developments in search of innovative materials continue its path in thin film solar cells to develop the photovoltaic field by enhancing its efficiency.

Download or read book Copper Indium Gallium Selenide Thin Film Solar Cells written by Yang Tang and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The solar energy as one of the new energy sources and a regenerated energy is abundant and pollution-free. Most photovoltaic devices (solar cells) sold in the market today are based on silicon wafers, the so-called first generation" technology. The market at present is on the verge of switching to a "second generation" of thin film solar cell technology which offers prospects for a large reduction in material costs by eliminating the costs of the silicon wafers. Cadmium telluride (CdTe).

Download or read book A Study of Hot Carrier Copper Indium Gallium Diselenide Based Thin Film Solar Cells written by Yige Hu and published by . This book was released on 2013 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Experiments were performed on the national renewable energy laboratory (NREL) conventional solar cell SC1. Comparison of the current-voltage relationships of CIGS illuminated under low energy and high energy photon wavelengths shows evidence of hot carriers contributing to the collection. A modified Shockley lucky electron model is developed to extract the initial carrier energies and the phonon mean free paths by applying the hot carrier concept to the traditional thin film CIGS cell design. An improvement using the hot carrier theory is made by imbedding the traditional design with a barrier between the buffer layer and absorber layer for blocking the cold diffusion carriers while allowing most hot carriers to pass through. A barrier consisting of Zn0.3Cd0.7S is proposed for optimal effectiveness.

Download or read book Development of in situ methods for process monitoring and control and characterization of Cu Zn Sn S based thin films written by Van Duren, Stephan and published by Universitätsverlag der TU Berlin. This book was released on 2019-06-03 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, kesterite Cu2ZnSnS4 (CZTS) has become an interesting alternative to copper indium gallium (di)selenide (CIGS) due to its non-toxic and earth abundant constituents. A variety of methods is being used to fabricate kesterite thin films, such as coevaporation, sputtering, electrodeposition, spray pyrolysis and others. Most of them include an annealing step to stimulate elemental mixing and interdiffusion. Although conversion efficiencies of kesterite solar cells have increased among different research groups, the record value of 12.6% set by IBM in 2014 has not been broken yet. Therefore, experimental and theoretical studies are needed to predict the effect of the secondary phases and detrimental defects on the electronical properties of the CZTS based solar devices. The work presented here studies non-destructive techniques for in situ process control and monitoring. With the aim to detect phases and phase transitions to optimize crucial processing steps such as pre-annealing of metal precursors, high temperature annealing and vacuum deposition of Cu-Sn-Zn-S based thin films. The research consists of three parts in which Raman spectroscopy, X-ray diffraction (XRD) and reflectometry are used to explore this objective. In the first part Raman spectroscopy is investigated as an in situ monitoring technique during high temperature annealing of thin films. It investigates whether the occurrence of CZTS can be monitored when it is created from annealing a Mo/CTS/ZnS layered thin film. CuS, SnS, ZnS and CTS (Cu-Sn-S) films are prepared by physical vapor deposition. The Raman scattering intensity was compared to investigate whether their specific vibrational modes can be distinguished from each other at room temperature. Then, the CTS film is annealed between 50 and 550 °C in order to investigate whether CTS vibrational modes can be identified at elevated temperatures and to see which transitions take place within the thin film. Also, a CZTS reference film is annealed between 50 and 550 °C for reference purposes. The temperature dependence of the main CZTS modes is examined to investigate whether it can be used for in situ temperature control. Finally, a ZnS layer is deposited on the unannealed CTS film to obtain a Mo/CTS/ZnS layered film. This film is used to study the conversion of CTS/ZnS into CZTS at elevated temperatures. It was found that Raman spectroscopy can successfully be used to monitor formation of CZTS by identifying its main vibrational mode during the annealing process. The intensity of the CTS modes reduces at elevated temperatures. At 450 °C, the main CZTS mode at 338 cm-1 can be clearly identified. The second part also focuses on high temperature annealing. However, in this part the focus lies on annealing of the metal precursor films. It is explored whether specific alloys benefit or hinder the formation of secondary phases during formation of the CZTS absorber films. Also, to what extent this influences solar cell performance. In situ XRD was investigated for in situ monitoring of the pre-annealing process. Cu-poor metal precursor films are prepared by sputtering deposition. The precursors are annealed at 150 °C, 200 °C, 300 °C and 450 °C in a three zone tube furnace. The effect on the structural properties is analysed by XRD to study the formation mechanism of alloys. The precursor films are then sulfurized in a three zone tube furnace. The structural properties of the absorber are analysed and correlated with structures in the precursor. It is found that formation of SnS2 in the absorber is proportional to the remaining Sn in the pre-annealed precursor. Also, electron micrographs showed that pre-annealing temperature influences grain growth and surface precipitation of Sn-S and Zn-S. Pre-annealed absorbers at 450 °C did not exhibit these phases on the surface. Solar devices are fabricated from the absorber films and best performing devices were obtained from pre-annealed absorbers at 450 °C. They showed absence of Sn and SnS2 in, respectively, the precursor and absorber. It could be concluded that SnS2 phases are detrimental to device efficiency and that SnS2 XRD peak intensity follows an inverse proportionality with device efficiency. The third part explores reflectometry as a method to monitor a growing film during thermal evaporation in a physical vapor deposition (PVD) system. A set of six CZTS absorbers is examined by ex situ Raman spectroscopy and reflectometry to study the influence of secondary phases CuS and ZnS on reflection spectra. Composition strongly influences reflection spectra and CuS leaves a characteristic dip in the reflection spectrum at about 600 nm. An integration method was used to analyze this phenomenon quantitatively. Subsequently, a reflectometry setup is designed, developed and integrated in the PVD system. Four different CZTS co-evaporated and multi-layered films are deposited. Structural, morphological and vibrational properties are investigated. The reflection spectra are monitored during deposition and time-dependent reflection spectra are analyzed for characteristic aspects related to properties such as thickness, band gap and phase formation. CuS could not be detected in the films by the integration method due to the superposition of the CuS dip with developing interference fringes during film growth. However, in multilayered CTS/ZnS film it is found that the onset of ZnS deposition can be detected by increased reflection intensity due to reduced surface roughness. Additionally, the shifting onset of the interference fringes to lower photon energies can be used as a characteristic fingerprint during the deposition process. In conclusion, this work showed that Raman spectroscopy, XRD and reflectometry could be successfully implemented for in situ process control and monitoring of high temperature annealing and vacuum deposition of Cu-Sn-Zn-S based precursors and absorbers. The application of these in situ techniques can lead to the optimization of thin film material properties and solar cells. As such, this study has paved the way for further improvement of Cu-Sn-Zn-S based precursors and thin film absorbers. Innerhalb der letzten Jahre hat sich Kesterit Cu2ZnSnS4 (CZTS) aufgrund seiner ungiftigen Bestandteile und deren hoher Verfügbarkeit zu einer interessanten Alternative zu Kupfer Indium Gallium (di-)Selenid (CIGS) entwickelt. Zur Herstellung von Kesterit Dünnschichten wird eine Vielzahl von Methoden verwendet wie Ko-Verdampfung, Sputtern, Elektrodeposition, Spray Pyrolyse und andere. Die meisten davon beinhalten einen Temper-Schritt um die Durchmischung und Interdiffusion der Elemente zu stimulieren. Obwohl der Wirkungsgrad der Kersterit Solarzellen von verschiedenen Forschungsgruppen erhöht wurde, ist der Rekordwert von IBM von 12,6 % noch nicht gebrochen worden. Daher werden experimentelle und theoretische Studien benötigt, die den Einfluss von Fremdphasen und schädlichen Defekten auf die elektronischen Eigenschaften der CZTS Solarzellen vorhersagen. Die vorliegende Arbeit untersucht zerstörungsfreie Methoden für die in situ Prozesskontrolle und -überwachung. Dabei ist das Ziel, entscheidende Prozessschritte wie das Vortempern der Metall-Vorläufer sowie das Hochtemperatur-Tempern und die Vakuum-Abscheidung von Cu-Sn-Zn-S basierten Schichten zu optimieren. Die Untersuchung besteht aus drei Teilen, in denen Raman-Spektroskopie, Röntgendiffraktion (XRD) und Reflektometrie benutzt werden um dieses Ziel zu erreichen. Im ersten Teil wird die Ramanspektroskopie als in situ Methode zur Überwachung des Hochtemperatur-Temperns von Dünnschichten betrachtet. Es wird untersucht, ob das Entstehen von CZTS beim Tempern von gestapelten Mo/CTS/ZnS Dünnschichten beobachtet werden kann. CuS, SnS, ZnS und CTS (Cu-Sn-S) Schichten werden durch physikalische Gasabscheidung hergestellt. Die Intensität der Raman Streuung wurde vergleichen um zu untersuchen, ob die spezifischen Vibrations-Moden bei Raumtemperatur voneinander unterschieden werden können. Dann werden die CTS Schichten zwischen 50 °C und 550 °C getempert um zu untersuchen, ob die CTS Vibrations-Moden bei höheren Temperaturen identifiziert werden können und um festzustellen, welche Übergänge innerhalb der Schicht auftreten. Außerdem wurde eine CZTS Referenzschicht zwischen 50 °C und 550 °C für Referenzzwecke getempert worden. Die Temperaturabhängigkeit der CZTS Haupt-Moden werden betrachtet, um zu untersuche, ob sie für die in situ Temperaturüberwachung verwendet werden können. Abschließend wurde eine ZnS Schicht auf einem nicht getemperten CTS Film abgeschieden, um eine gestapelte Mo/CTS/ZnS Schicht zu erhalten. Diese Schicht wird verwendet, um die Umwandlung von CTS/ZnS zu CZTS bei erhöhten Temperaturen zu untersuchen. Es wurde festgestellt, dass Raman Spektroskopie erfolgreich verwendet werden kann, um die Bildung von CZTS zu überwachen, indem die Haupt-Vibrations-Moden während des Temperns identifiziert werden. Die Intensität der CTS Moden verringert sich bei höheren Temperaturen. Bei 450 °C kann die CZTS Hauptmode bei 338 cm-1 klar identifiziert werden. Der zweite Teil konzentriert sich ebenfalls auf das Hochtemperatur-Tempern. In diesem Teil liegt der Fokus allerdings auf dem Tempern der Metal-Vorläufer-Schichten. Es wird erforscht, ob bestimmte Legierungen die Entstehung von Fremdphasen während der Entstehung der CZTS Absorberschichten begünstigen oder hemmen und welchen Einfluss dies auf die Leistung der Solarzelle hat. In situ XRD wird verwendet, um die Prozesse des Vortemperns zu überwachen. Kupfer arme Metall-Vorläufer-Schichten werden durch Sputtern aufgetragen. Die Vorläufer werden bei 150 °C, 200 °C, 300 °C und 450 °C in einem Drei-Zonen-Röhren-Ofen getempert. Die Auswirkungen auf die strukturellen Eigenschaften werden mit XRD analysiert, um den Entstehungsmechanismus der Legierungen zu untersuchen. Die Vorläuferschichten werden dann in einem Drei-Zonen-Röhren-Ofen sulfurisiert. Die strukturellen Eigenschaften des Absorbers werden analysiert und mit der Struktur der Vorläufer korreliert. Es wurde festgestellt, dass die Entstehung von SnS2 im Absorber proportional zum verbleibenden Sn im vorgetemperten Vorläufer ist. Außerdem zeigen Bilder des Rasterelektronenmikroskops, dass die Temperatur des Vortemperns das Kornwachstum und das Abschieden von Sn-S und Zn-S an der Oberfläche beeinflusst. Bei 450 °C vorgetemperte Absorber weisen keine dieser Phasen an der Oberfläche auf. Solarzellen werden aus diesen Absorber-Schichten hergestellt und die besten Zellen entstanden aus den bei 450 °C vorgetemperten Absorbern. Bei diesen traten Sn und SnS2 weder im Vorläufer noch im Absorber auf. Es konnte geschlussfolgert werden, dass SnS2 Phasen schädlich für den Wirkungsgrad der Zellen sind und dass die Intensität der SnS2 XRD Peaks invers proportional zum Wirkungsgrad der Zellen ist. Der dritte Teil erforscht die Reflektometrie als Methode zur Überwachung des Schichtwachstums während des thermischen Verdampfens in einer Anlage zur physikalischen Gasabscheidung (PVD). Ein Satz aus sechs CZTS Absorbern wird mittels ex situ Raman-Spektroskopie und Reflektometrie vermessen, um den Einfluss der Fremdphasen CuS und ZnS auf die Reflexionsspektren zu untersuchen. Die Zusammensetzung beeinflusst die Reflexionsspektren stark und CuS hinterlässt eine charakteristische Senkung bei 600 nm im Reflexionsspektrum. Eine Integrationsmethode wurde verwendet um dieses Phänomen quantitativ zu analysieren. Anschließend wurde ein Reflektometrieaufbau entworfen, entwickelt und in die PVD-Anlage integriert. Vier verschiedene CZTS koverdampfte und Mehrschicht-Filme wurden abgeschieden. Strukturelle, morphologische und Vibrationseigenschaften werden untersucht. Die Reflexionsspektren werden während des Abscheidens aufgenommen und zeitabhängige Reflexionsspektren werden auf charakteristische Aspekte im Zusammenhang mit Eigenschaften wie Dicke, Bandlücke und Entstehung von Phasen untersucht. CuS konnte in den Schichten mit der Integrations-Methode wegen der Überlagerung der CuS Senkung mit dem entstehenden Interferenzmuster nicht detektiert werden. Allerdings wurde in gestapelten CTS/ZnS Schichten beobachtet werden, dass der Beginn der ZnS Abscheidung durch eine ansteigende Intensität der Reflektion aufgrund der verringerten Oberflächenrauigkeit detektiert werden kann. Zusätzlich kann die Verschiebung des Startpunkts der Interferenzen zu niedrigeren Photonenenergien als charakteristischer Fingerabdruck während des Abscheidungsprozesses verwendet werden. Zusammenfassend zeigt diese Arbeit, dass Raman-Spektroskopie, XRD und Reflektrometrie erfolgreich als in situ Prozesskontrolle und –überwachung bei Hochtemperatur-Tempern und Vakuum-Abscheidung von Cu-Sn-Zn-S basierten Vorläufern und Absorbern realisiert werden konnten. Die Anwendung dieser in situ Techniken kann zu einer Optimierung der Eigenschaften von Dünnschicht-Materialien und von Solarzellen führen. Als solche hat diese Untersuchung den Weg für weitere Verbesserung von Cu-Sn-Zn-S basierte Vorläufer und Dünnschicht-Absorber geebnet.

Download or read book Polycrystalline Thin Film Research Copper Indium Gallium Diselenide written by and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Copper indium gallium diselenide (CIGS) solar cells are one of the primary focuses of research by the Thin Film Material Science and Processing Group. The group develops processes and materials related to thin-film polycrystalline photovoltaic (PV) devices as well as the equipment required for routine analysis of these devices and materials. We work closely with other groups in the Materials Science Center to achieve a deeper understanding of thin-film materials and devices.

Download or read book Preparation of Copper indium gallium diselenide Precursor Films by Electrodeposition for Fabricating High Efficiency Solar Cells written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub. 1-n Ga.sub.x)Se.sub. 2, with the ratio of Ga/(In+Ga) being approximately 0.39.

Download or read book Pulsed Laser Annealing and Rapid Thermal Annealing of Copper indium gallium diselenide based Thin film Solar Cells written by Xuege Wang and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Device simulation using one-dimensional (1-D) AMPS program has also been carried in this work for a typical CIGS cell with different defect densities. A well fitting between simulation results and progressive RTA results has been obtained. The results show that the device performance and spectral response can be positively improved by reducing the defect density of CIGS absorber layer. In addition, Gamma-Ray radiation tolerance study on several CIGS samples and solar cells were performed under different total dose by varying the sample displacements and exposure times. XRD and Photo- J-V measurements were taken before and after each radiation. The results show that the surface morphology, crystallinity and the device performance of CIGS solar cells change under certain radiation dose condition.

Download or read book Solution Processing for Copper Indium Sulfide Solar Cells written by Stephen Thacker Connor and published by Stanford University. This book was released on 2011 with total page 99 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, the field of photovoltaics has become increasingly important due to rising energy demand and climate change. While most solar cells are currently composed of crystalline silicon, devices with thinner films of inorganic absorber materials might allow production at a greater scale due to their lower materials cost. In particular, thin films of CuInS2 are promising solar absorber materials due to their high efficiencies and low required thicknesses. However, the fabrication of thin film solar cells currently requires expensive vacuum techniques. As an alternative, solution-based deposition techniques have been proposed as a route to low-cost and high-throughput electronic device fabrication. I have studied how film growth depends on solutuion deposited precursor film quality, with the goal of producing large grained films of CuInS2 through solution processing. In the first approach, we used solvothermal decomposition of organometallic precursors at moderate temperatures to produce nanoparticles of CuInS2. Thin films of these nanoparticles were cast onto molybdenum coated glass and further processed to create CuInS2 solar cells. We found that performance was dependent on film porosity, grain size, and stoichiometry of the nanoparticles. Films with grain sizes of ~200nm were attained, from which 1.3% efficient solar cells were made. In addition, we showed that this synthesis could be extended to produce CuInS2 nanoparticles with partial substitution of Fe, Zn, and Ga. In the second approach, we synthesized an air-stable hybrid organometallic/nanoparticle ink at room temperature in ambient conditions through a vulcanization reaction. This ink could be coated onto substrates in smooth layers, and further reactive annealing formed large grained CuInS2 films. This process was characterized, and a correlation between residual carbon and grain growth was found. Additionally, the chemical transformation between precursor layers and final sulfide thin film was analyzed, with an emphasis on the difference between sulfurization and selenization. We demonstrated that the sulfurization process was producing morphological defects due to its nucleation limited growth mechanism. However, it was modified to more closely resemble the diffusion limited selenization mechanism, thus producing flat films of CuInS2 with grain sizes of ~500nm.

Download or read book Metastability of Copper Indium Gallium Diselenide Polycrystalline Thin Film Solar Cell Devices written by Jinwoo Lee and published by . This book was released on 2008 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Preparation and Characterization of Silver Copper Indium Gallium Diselenide Thin film Solar Cells written by 吳俊杰 and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Preparation and Characterization of Copper Indium Gallium Diselenide Films Used in the Absorber Layers of Thin film Solar Cells written by 陳富珊 and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Materials and Modelling for Solar Cells written by Z. Pezeshki and published by Materials Research Forum LLC. This book was released on 2021-07-05 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents a comprehensive survey about advanced solar cell technologies. Focus is placed on semiconductor materials, solar cell efficiency, improvements in surface recombination velocity, charge density, high ultraviolet (UV) sensitivity, modeling of solar cells etc. The book references 281 original resources with their direct web links for in-depth reading. Keywords: Solar Cells, Thin Film Solar Cells, Solar Cell Efficiency, Semiconductor Materials, Surface Recombination Velocity, Charge Density, High UV Sensitivity, Heavily-doped Silicon Wafers, Amorphous Semiconductors, Nanocrystalline Semiconductors, Field Effect, Ferroelectric Semiconductors, Solar Cell Modelling.