Download or read book Effects of Nonuniform Doping in Field Effect Transistors written by Zine-Eddine. Lass Abid and published by . This book was released on 1991 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of Nanoscaled Field Effect Transistors written by Amit Chaudhry and published by Springer Science & Business Media. This book was released on 2013-04-23 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-01-25 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 1038 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Tunneling Field Effect Transistors written by T. S. Arun Samuel and published by CRC Press. This book was released on 2023-06-08 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications. Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon. The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.
Download or read book The Effect of Nonuniform Channel Doping on High Frequency JFET and MESFET Devices written by Giovonnae Francesca Anderson and published by . This book was released on 1979 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Introduction to Semiconductor Devices written by Kevin F. Brennan and published by Cambridge University Press. This book was released on 2005-02-03 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: From semiconductor fundamentals to semiconductor devices used in the telecommunications and computing industries, this 2005 book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductors. Next, the field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturisation are then addressed. The rest of the book discusses the structure, behaviour, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.
Download or read book Nanoelectronics Physics Materials and Devices written by Angsuman Sarkar and published by Elsevier. This book was released on 2023-01-03 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: Approx.528 pages Approx.528 pages
Download or read book Sustainable Energy and Technological Advancements written by Gayadhar Panda and published by Springer Nature. This book was released on 2023-10-17 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains selected papers presented at Second International Symposium on Sustainable Energy and Technological Advancements (ISSETA 2023), organized by the Department of Electrical Engineering, NIT Meghalaya, Shillong, India, during February 24–25, 2023. The topics covered in the book are the cutting-edge research involved in sustainable energy technologies, smart building technology, integration and application of multiple energy sources; advanced power converter topologies and their modulation techniques; and information and communication technologies for smart micro-grids.
Download or read book Compact Models for Integrated Circuit Design written by Samar K. Saha and published by CRC Press. This book was released on 2018-09-03 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
Download or read book Chinese Journal of Electronics written by and published by . This book was released on 2004 with total page 778 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Micro Electronics and Telecommunication Engineering written by Devendra Kumar Sharma and published by Springer Nature. This book was released on 2020-04-02 with total page 735 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents selected papers from the 3rd International Conference on Micro-Electronics and Telecommunication Engineering, held at SRM Institute of Science and Technology, Ghaziabad, India, on 30-31 August 2019. It covers a wide variety of topics in micro-electronics and telecommunication engineering, including micro-electronic engineering, computational remote sensing, computer science and intelligent systems, signal and image processing, and information and communication technology.
Download or read book Silicon Integrated Circuits written by Dawon Kahng and published by Academic Press. This book was released on 2013-10-22 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt: Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters—physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This publication is a good source for students and individuals interested in MOS-based integrated circuits.
Download or read book Manual of Classification written by United States. Patent and Trademark Office and published by . This book was released on 1998 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt: Includes list of replacement pages.
Download or read book An Analysis of the Effects of Low Energy Electron Radiation on AlxGa1 xN GaN Modulation doped Field effect Transistors written by James M. Sattler (2LT, USAF.) and published by . This book was released on 2004 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Outlook and Challenges of Nano Devices Sensors and MEMS written by Ting Li and published by Springer. This book was released on 2017-02-22 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with an overview of the design, fabrication, simulation, and reliability of nanoscale semiconductor devices, MEMS, and sensors, as they serve for realizing the next-generation internet of things. The authors focus on how the nanoscale structures interact with the electrical and/or optical performance, how to find optimal solutions to achieve the best outcome, how these apparatus can be designed via models and simulations, how to improve reliability, and what are the possible challenges and roadblocks moving forward.
Download or read book Use of Services for Family Planning and Infertility United States 1982 written by Gerry E. Hendershot and published by . This book was released on 1988 with total page 982 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 1982 statistics on the use of family planning and infertility services presented in this report are preliminary results from Cycle III of the National Survey of Family Growth (NSFG), conducted by the National Center for Health Statistics. Data were collected through personal interviews with a multistage area probability sample of 7969 women aged 15-44. A detailed series of questions was asked to obtain relatively complete estimates of the extent and type of family planning services received. Statistics on family planning services are limited to women who were able to conceive 3 years before the interview date. Overall, 79% of currently mrried nonsterile women reported using some type of family planning service during the previous 3 years. There were no statistically significant differences between white (79%), black (75%) or Hispanic (77%) wives, or between the 2 income groups. The 1982 survey questions were more comprehensive than those of earlier cycles of the survey. The annual rate of visits for family planning services in 1982 was 1077 visits /1000 women. Teenagers had the highest annual visit rate (1581/1000) of any age group for all sources of family planning services combined. Visit rates declined sharply with age from 1447 at ages 15-24 to 479 at ages 35-44. Similar declines with age also were found in the visit rates for white and black women separately. Nevertheless, the annual visit rate for black women (1334/1000) was significantly higher than that for white women (1033). The highest overall visit rate was for black women 15-19 years of age (1867/1000). Nearly 2/3 of all family planning visits were to private medical sources. Teenagers of all races had higher family planning service visit rates to clinics than to private medical sources, as did black women age 15-24. White women age 20 and older had higher visit rates to private medical services than to clinics. Never married women had higher visit rates to clinics than currently or formerly married women. Data were also collected in 1982 on use of medical services for infertility by women who had difficulty in conceiving or carrying a pregnancy to term. About 1 million ever married women had 1 or more infertility visits in the 12 months before the interview. During the 3 years before interview, about 1.9 million women had infertility visits. For all ever married women, as well as for white and black women separately, infertility services were more likely to be secured from private medical sources than from clinics. The survey design, reliability of the estimates and the terms used are explained in the technical notes.
