Download or read book Effects of Electron Radiation on the Noise and Equivalent Circuit Parameters in Bipolar Junction Transistors written by Robert Michael Garvey and published by . This book was released on 1974 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1974 with total page 1138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1975 with total page 970 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Parameters of Bipolar Field Effect and Unijunction Transistor Large Signal Models for Use in Transient Radiation Effects Analysis written by Jerry L. Hill and published by . This book was released on 1966 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this study was to measure the large signal equivalent circuit parameters and transient radiation response of selected semiconductor components. These measurements are to be used by the personnel of the Instrumentation Laboratories, Massachusetts Institute of Technology, to select components in the development of the SABRE guidance system. The devices measured include three types: bipolar, field effect, and unijunction transistors. The difficulties experienced in the study were due to the lack of acceptable equivalent circuit models and measurement techniques. These difficulties were overcome by the development of both acceptable models and measurement techniques. The models derived and parameter measurements are presented in this report.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1972 with total page 918 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Effects on Junction Field effect Transistors JFETS MOSFETs and Bipolar Transistors as Related to SSC Circuit Design written by and published by . This book was released on 1990 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are presented. The evaluations include dc parameters, as well as capacitive variations and noise evaluations. The tests are made at the low current and voltage levels (in particular, at currents ≤1 mA) that are essential for the low-power regimes required by SSC circuitry. Detailed noise data are presented both before and after 5-Mrad [gamma] total-dose exposure. SPICE radiation models for three high-frequency bipolar processes are compared for a typical charge-sensitive preamplifier.
Download or read book Proceedings of IEEE Southeast con Region 3 Conference written by and published by . This book was released on 1974 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microwave Transistors written by E. D. Graham and published by . This book was released on 1975 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: Collection of papers relating to device and circuit design, device reliability, and radiation effects in microwave bipolar transistors.
Download or read book Radiation Effects Design Handbook written by J. E. Drennan and published by . This book was released on 1971 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Inventing the Model of the Future written by and published by . This book was released on 1974 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Measurement Techniques for Noise Figure and Gain of Bipolar Transistors written by Wayne Kan Jung and published by . This book was released on 1993 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effect of Electron Radiation on Junction Field Effect Transistors written by Bernard W. Vatz and published by . This book was released on 1971 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effects of Electron Irradiation on Electrical Parameters and Noise Properties of Silicon P n Junction Diodes written by Lai-Wang Chen and published by . This book was released on 1971 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling of Transient Ionizing Radiation Effects in Bipolar Devices at High Dose rates written by and published by . This book was released on 2000 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: To optimally design circuits for operation at high intensities of ionizing radiation, and to accurately predict their a behavior under radiation, precise device models are needed that include both stationary and dynamic effects of such radiation. Depending on the type and intensity of the ionizing radiation, different degradation mechanisms, such as photoelectric effect, total dose effect, or single even upset might be dominant. In this paper, the authors consider the photoelectric effect associated with the generation of electron-hole pairs in the semiconductor. The effects of low radiation intensity on p-II diodes and bipolar junction transistors (BJTs) were described by low-injection theory in the classical paper by Wirth and Rogers. However, in BJTs compatible with modem integrated circuit technology, high-resistivity regions are often used to enhance device performance, either as a substrate or as an epitaxial layer such as the low-doped n-type collector region of the device. Using low-injection theory, the transient response of epitaxial BJTs was discussed by Florian et al., who mainly concentrated on the effects of the Hi-Lo (high doping - low doping) epilayer/substrate junction of the collector, and on geometrical effects of realistic devices. For devices with highly resistive regions, the assumption of low-level injection is often inappropriate, even at moderate radiation intensities, and a more complete theory for high-injection levels was needed. In the dynamic photocurrent model by Enlow and Alexander. p-n junctions exposed to high-intensity radiation were considered. In their work, the variation of the minority carrier lifetime with excess carrier density, and the effects of the ohmic electric field in the quasi-neutral (q-n) regions were included in a simplified manner. Later, Wunsch and Axness presented a more comprehensive model for the transient radiation response of p-n and p-i-n diode geometries. A stationary model for high-level injection in p-n junctions was developed by Isaque et al. They used a more complete ambipolar transport equation, which included the dependencies of the transport parameters (ambipolar diffusion constant, mobility, and recombination rate) on the excess minority carrier concentration. The expression used for the recombination rate was that of Shockley-Reed-Hall (SRH) recombination which is dominant for low to mid-level radiation intensities. However, at higher intensities, Auger recombination becomes important eventually dominant. The complete ambipolar transport equation including the complicated dependence of transport parameters on the radiation intensity, cannot be solved analytically. This solution is obtained for each of the regimes where a given recombination mechanism dominates, and then by joining these solutions using appropriate smoothing functions. This approach allows them to develop a BJT model accounting for the photoelectric effect of the ionizing radiation that can be implemented in SPICE.
Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1974 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1997 with total page 940 pages. Available in PDF, EPUB and Kindle. Book excerpt:
