Download or read book Effective Passivation of the Low Resistivity Silicon Surface by a Rapid Thermal Oxide PECVD Silicon Nitride Stack and Its Application to Passivated Rear and Bifacial Si Solar Cells written by and published by . This book was released on 1998 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: A novel stack passivation scheme, in which plasma silicon nitride (SiN) is stacked on top of a rapid thermal SiO2 (RTO) layer, is developed to attain a surface recombination velocity (S) approaching 10 cm/s at the 1.3 [Omega]-cm p-type (100) silicon surface. Such low S is achieved by the stack even when the RTO and SiN films individually yield considerably poorer surface passivation. Critical to achieving low S by the stack is the use of a short, moderate temperature anneal (in this study 730 C for 30 seconds) after film growth and deposition. This anneal is believed to enhance the release and delivery of atomic hydrogen from the SiN film to the Si-SiO2 interface, thereby reducing the density of interface traps at the surface. Compatibility with this post-deposition anneal makes the stack passivation scheme attractive for cost-effective solar cell production since a similar anneal is required to fire screen-printed contacts. Application of the stack to passivated rear screen-printed solar cells has resulted in V{sub oc}'s of 641 mV and 633 mV on 0.65 [Omega]-cm and 1.3 [Omega]-cm FZ Si substrates, respectively. These V{sub oc} values are roughly 20 mV higher than for cells with untreated, highly recombinative back surfaces. The stack passivation has also been used to form fully screen-printed bifacial solar cells which exhibit rear-illuminated efficiency as high as 11.6% with a single layer AR coating.

Download or read book Solar Cells written by Majid Nayeripour and published by BoD – Books on Demand. This book was released on 2020-03-25 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: This edited volume Solar Cells is a collection of reviewed and relevant research chapters offering a comprehensive overview of recent developments in the field of renewable energy. The book comprises single chapters authored by various researchers and is edited by a group of experts active in the physical sciences, engineering, and technology research areas. All chapters are complete in themselves but united under a common research study topic. This publication aims at providing a thorough overview of the latest research efforts by international authors on physical sciences, engineering, and technology, and opens new possible research paths for further novel developments.

Download or read book Silicon Nitride Silicon Dioxide Thin Insulating Films and Other Emerging Diele c trics VIII written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2005 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Surface and Bulk Defect Passivation by Low Temperature PECVD Oxides and Nitrides written by and published by . This book was released on 1995 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effectiveness of PECVD passivation of surface and bulk defects in Si, as well as phosphorous diffused emitters, Is investigated and quantified. Significant hydrogen incorporation coupled with high positive charge density in the PECVD SiN layer is found to play an important role in bulk and surface passivation. It is shown that photo-assisted anneal in a forming gas ambient after PECVD depositions significantly improves the passivation of emitter and bulk defects. PECVD passivation of phosphorous doped emitters and boron doped bare Si surfaces is found to be a strong function of doping concentration. Surface recombination velocity of less than 200 cm/s for 0.2 Ohm-cm and less than 1 cm/s for high resistivity substrates ((approximately) Ohm-cm) were achieved. PECVD passivation improved bulk lifetime in the range of 30% to 70% in multicrystalline Si materials. However, the degree of the passivation was found to be highly material specific. Depending upon the passivation scheme, emitter saturation current density (J{sub oe}) can be reduced by a factor of 3 to 9. Finally, the stability of PECVD oxide/nitride passivation under prolonged UV exposure is established.

Download or read book Silicon Heterojunction Solar Cells written by W.R. Fahrner and published by Trans Tech Publications Ltd. This book was released on 2006-08-15 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: The world of today must face up to two contradictory energy problems: on the one hand, there is the sharply growing consumer demand in countries such as China and India. On the other hand, natural resources are dwindling. Moreover, many of those countries which still possess substantial gas and oil supplies are politically unstable. As a result, renewable natural energy sources have received great attention. Among these, solar-cell technology is one of the most promising candidates. However, there still remains the problem of the manufacturing costs of such cells. Many attempts have been made to reduce the production costs of “conventional” solar cells (manufactured from monocrystalline silicon using diffusion methods) by instead using cheaper grades of silicon, and simpler pn-junction fabrication. That is the ‘hero’ of this book; the heterojunction solar cell.

Download or read book High Efficiency Silicon Solar Cells written by Martin A. Green and published by Trans Tech Publications Ltd. This book was released on 1987-01-01 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: The early chapters comprehensively review the optical and transport properties of silicon. Light trapping is described in detail. Limits on the efficiency of silicon cells are discussed as well as material requirements necessary to approach these limits. The status of current approaches to passifying surfaces, contacts and bulk regions is reviewed. The final section of the book describes the most practical approaches to the fabrication of high-efficiency cells capable of meeting the efficiency targets for both concentrated and non-concentrated sunlight, including a discussion of design and processing approaches for non-crystalline silicon.

Download or read book Sputtered Aluminium Oxide and Amorphous Silicon for Silicon Solar Cells written by Xinyu Zhang and published by . This book was released on 2015 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-efficiency silicon solar cells have been attracting an increased interest in recent years. Surface passivation is essential for various types of high-performance solar cells, particularly when thinner silicon wafers are used to reduce the material cost. Passivating dielectric thin films have been widely studied and used in solar cells designs, these include atomic-layer deposited (ALD) aluminium oxide, plasma-enhanced chemical vapour deposited (PECVD) silicon nitride and PECVD intrinsic amorphous silicon. The aim of this thesis is to develop and optimise an alternative deposition method for surface passivating films: sputtering. Sputtering is especially attractive for industrial production, due to its high throughput, easy and safe operation and global cost-effectiveness. This thesis has focussed on optimising the reactive sputtering of aluminium oxide, using an aluminium target, and the non-reactive sputtering of amorphous silicon, using a silicon target. A key innovation has been the addition of hydrogen to the mix of gasses that form the plasma, which permits to incorporate hydrogen into the films, leading to a significantly improved surface passivation quality compared to non-hydrogenated films. We have achieved the best surface passivation results by sputtered aluminium oxide to date, with an effective surface recombination velocity of 1 cm/s on 1.5 ohm-cm n-type silicon. This result is similar to the SRV of 0.9 cm/s measured on aluminium oxide films deposited by PA-ALD on the same substrates. Good passivation was also achieved on p-type silicon. The investigations into the reactive sputtering process have shown that the film properties are closely related to the oxidation level of the aluminium target, which can be controlled by adjusting process parameters. It has also been found that the presence of hydrogen in the plasma is beneficial for establishing the optimum conditions of the deposition; not only does the surface passivation quality improve, but the reactive sputtering process becomes easier to control as well.We have also shown - for the first time - that intrinsic amorphous silicon (a-Si:H) films by sputtering deposition are capable of providing an excellent passivation of crystalline silicon surfaces. A SRV of 1.5 cm/s on 1.5 ohm-cm n-type silicon and SRV of 9 cm/s on 1 ohm-cm p-type silicon have been achieved, which are comparable to the commonly used PECVD deposited a-Si:H films. After investigating the film properties using Fourier Transform Infrared Spectroscopy (FTIR), we observe that our sputtered a-Si:H films have a characteristic signature in terms of chemical bonding configurations, where several types of silicon-hydrogen bonds exist. From those measurements we have estimated that there is approximately a 4% hydrogen concentration in the films, sufficient to achieve excellent surface passivation. Finally, the thesis also presents initial attempts at developing doped amorphous silicon films, which could enable the development of an all-sputtered silicon heterojunction solar cell technology. Lightly doped a-Si:H films were deposited using a 1% boron doped silicon target and a 0.01% phosphorus doped silicon target. We have found an appropriate way to avoid surface passivation degradation caused by the doped layer deposition onto an intrinsic a-Si:H layer.

Download or read book New Perspectives on Surface Passivation Understanding the Si Al2O3 Interface written by Lachlan E. Black and published by Springer. This book was released on 2016-04-15 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book addresses the problem of passivation at the surface of crystalline silicon solar cells. More specifically, it reports on a high-throughput, industrially compatible deposition method for Al2O3, enabling its application to commercial solar cells. One of the main focus is on the analysis of the physics of Al2O3 as a passivating dielectric for silicon surfaces. This is accomplished through a comprehensive study, which moves from the particular, the case of aluminium oxide on silicon, to the general, the physics of surface recombination, and is able to connect theory with practice, highlighting relevant commercial applications.

Download or read book Surface Passivation of Industrial Crystalline Silicon Solar Cells written by Joachim John and published by Institution of Engineering and Technology. This book was released on 2018-11-15 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt: Surface passivation of silicon solar cells describes a technology for preventing electrons and holes to recombine prematurely with one another on the wafer surface. It increases the cell's energy conversion efficiencies and thus reduces the cost per kWh generated by a PV system.

Download or read book Surface passivation of silicon by PECVD silicon nitride written by Franciscus Marinus Schuurmans and published by . This book was released on 1998 with total page 135 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Electrochemical Society. Dielectric Science and Technology Division and published by The Electrochemical Society. This book was released on 2001 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Photovoltaic Science and Engineering written by Antonio Luque and published by John Wiley & Sons. This book was released on 2011-01-31 with total page 1172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The most comprehensive, authoritative and widely cited reference on photovoltaic solar energy Fully revised and updated, the Handbook of Photovoltaic Science and Engineering, Second Edition incorporates the substantial technological advances and research developments in photovoltaics since its previous release. All topics relating to the photovoltaic (PV) industry are discussed with contributions by distinguished international experts in the field. Significant new coverage includes: three completely new chapters and six chapters with new authors device structures, processing, and manufacturing options for the three major thin film PV technologies high performance approaches for multijunction, concentrator, and space applications new types of organic polymer and dye-sensitized solar cells economic analysis of various policy options to stimulate PV growth including effect of public and private investment Detailed treatment covers: scientific basis of the photovoltaic effect and solar cell operation the production of solar silicon and of silicon-based solar cells and modules how choice of semiconductor materials and their production influence costs and performance making measurements on solar cells and modules and how to relate results under standardised test conditions to real outdoor performance photovoltaic system installation and operation of components such as inverters and batteries. architectural applications of building-integrated PV Each chapter is structured to be partially accessible to beginners while providing detailed information of the physics and technology for experts. Encompassing a review of past work and the fundamentals in solar electric science, this is a leading reference and invaluable resource for all practitioners, consultants, researchers and students in the PV industry.

Download or read book Surface Passivation and Junction Engineering in Silicon written by Gaurav Thareja and published by Stanford University. This book was released on 2011 with total page 99 pages. Available in PDF, EPUB and Kindle. Book excerpt: The planar silicon MOSFET is facing diminishing performance returns in improvement from device geometry scaling. Two alternative devices are being explored as possible solutions to this problem. The first contender is a multi-gate device (FINFET or surround gate) and the other is a MOSFET with high mobility channel material such as germanium, III-V or carbon. Ge has emerged as an important materials platform during recent years. With its high carrier mobility and the ability to detect and emit photons at telecommunications wavelengths, Ge is an attractive candidate for applications in both high performance electronics and optoelectronics. Moreover due to its compatibility with conventional CMOS fabrication, it can be processed using the standard manufacturing techniques that are currently used for silicon. However Ge does present a number of unique challenges that must be overcome, including issues of surface passivation, low n-type dopant solubility, and high dopant diffusivity. In this work, the unique properties of surface passivation enabled by radical oxidation are discussed. Some of the highlights are low temperature processing, substrate orientation independent growth rate of dielectric and low interface density. Subsequently, this radical oxidation is applied to 3D vertical gate all around (GAA) silicon MOSFET devices. Higher drive current, lower gate leakage and higher gate dielectric breakdown voltage are demonstrated for GAA devices using radical oxidation in comparison to thermal oxidation In the second part, radical oxidation is investigated for GeO2 growth as an interfacial layer in high-k / Ge gate stack. Using MOSCAP and n-MOSFET devices on Ge, low interface state density combined with drive current and electron mobility enhancement is demonstrated for Ge devices. In the third part, the source/drain junctions for Ge are studied. Ultra-shallow junctions using plasma immersion ion implantation are demonstrated. High n-type dopant activation in Ge using laser annealing is realized along with high performance diodes, significant reduction of contact resistance and integration in a MOSFET process flow.

Download or read book Deposition and Characterization of Plasma Enhanced Chemical Vapour Deposition Silicon Nitride Films for Surface Passivation of Silicon Solar Cells written by Syed Iftekhar Ali and published by . This book was released on 2004 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Layer Deposition in Energy Conversion Applications written by Julien Bachmann and published by John Wiley & Sons. This book was released on 2017-03-15 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: Combining the two topics for the first time, this book begins with an introduction to the recent challenges in energy conversion devices from a materials preparation perspective and how they can be overcome by using atomic layer deposition (ALD). By bridging these subjects it helps ALD specialists to understand the requirements within the energy conversion field, and researchers in energy conversion to become acquainted with the opportunities offered by ALD. With its main focus on applications of ALD for photovoltaics, electrochemical energy storage, and photo- and electrochemical devices, this is important reading for materials scientists, surface chemists, electrochemists, electrotechnicians, physicists, and those working in the semiconductor industry.

Download or read book Surface Passivation of Crystalline Silicon by Dual Layer Amorphous Silicon Films written by Dmitri S. Stepanov and published by . This book was released on 2011 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Response Surface Methodology is used in this work to optimize the deposition conditions of SiNx. Optimization of the response surface function yielded deposition conditions that materialized in a surface recombination velocity of less than 4cm/s. The BACH (Back Amorphous Crystalline silicon Heterojunction) cell concept makes use of this dual layer a-Si:H/SiN x stack to form a high efficiency photovoltaic device. The high quality passivating structure can result in the BACH solar cell device with more than 20% conversion efficiency.The probability of recombination of photogenerated electron hole pairs in crystalline silicon is governed by the density of surface defect states and the density of charge carriers. Depositions of intrinsic hydrogenated amorphous silicon (a-Si:H) in dc saddle field (DCSF) PECVD system and hydrogenated amorphous silicon nitride (SiNx) in rf PECVD system forms a dual layer stack on c-Si, which results in an excellent passivation of the surface and an anti-reflection coating.

Download or read book Crystalline Silicon Surface Passivation by Amorphous Silicon Compounds written by Roman Petres and published by Sudwestdeutscher Verlag Fur Hochschulschriften AG. This book was released on 2011-09 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solar cells based on crystalline silicon (c-Si) have the potential to make photovoltaic electricity cheaper than coal-based electric power generation within less than 10 years. The largest cost decrease potential on the cell level lies with improved electronic surface passivation. In this work, the current industry standard, amorphous silicon nitride (a-SiNx: H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD), is investigated and compared to amorphous silicon carbide, silicon carbonitride and silicon oxynitride films deposited by both high- and for the first time also low-frequency (LF) PECVD. It is shown that and an explanation offered as to why LF PECVD is capable of excellent surface passivation, comparable to remote-plasma results in literature and higher than previously published for LF PECVD. The achieved surface passivation quality is sufficient for dielectric rear-surface passivation without an underlying diffused back surface field. It is also shown that the purity grade of precursor gases used for film deposition can be lowered significantly without affecting cell efficiency and long-term stability on the module level, allowing for further cost reduction