Download or read book Effect of Growth Rate on the Structure and Stacking Disorder of SiC Crystals Grown by the Lely Method written by Yoshizō Inomata and published by . This book was released on 1969 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: The relation between the structure of SiC and its growth rate was studied at 2500 degrees C. The setting of the growth condition was improved by limiting the zone of recrystallization in the growth cavity. Super-saturation in the cavity was changed in several steps by the use of the cavity wall and thermo-insulator.

Download or read book EFFECT OF GROWTH RATE ON THE STRUCTURE AND STACKING DISORDER OF SiC CRYSTAL GROWN BY THE LELY METHOD written by Yoshizo Inomata and published by . This book was released on 1969 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt: The relation between the structure of SiC and its growth rate was studied at 2500 degrees C. The setting of the growth condition was improved by limiting the zone of recrystallization in the growth cavity. Super-saturation in the cavity was changed in several steps by the use of the cavity wall and thermo-insulator. (Author).

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1970 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Bibliography of Scientific and Industrial Reports written by and published by . This book was released on 1970 with total page 1454 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Relation Between Growth Temperature and the Structure of SiC Crystals Grown by the Sublimation Method written by Yoshizō Inomata and published by . This book was released on 1969 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: The relationship between growth temperature and the polytypes of SiC crystals has been studied experimentally at 2200 degrees C to 2600 degrees C under conditions of low supersaturation. The results are summarized as follows: (1) In the present experiment, excluding one example in which the 4 H-type was involved, the structure of all crystals consisted of the 6 H-, 15 R- and other long c-period types exceeding 21. Of the elemental structures of SiC, 2 H, 3 C, 4 H, 15 R, 6 H, and 21 R, only 6 H and 15 R were found. (2) In the range of 2200 degrees C - 2600 degrees C, 6 H and 15 R have the most thermal stability among the structures considered as elemental. However, the effect of impurity in the crystal and the shift from stoichiometry were neglected. (3) The relative amount of 15 R increased with decreasing temperature while 6 H showed the opposite tendency.

Download or read book Government Reports Index written by and published by . This book was released on 1970 with total page 1344 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book NBS Special Publication written by and published by . This book was released on 1918 with total page 1164 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book U S Government Research Development Reports written by and published by . This book was released on 1970 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Bibliography with Abstracts of AFCRL Publications from 1 January to 31 March 1970 written by Air Force Cambridge Research Laboratories (U.S.) and published by . This book was released on 1970 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This bibliography lists all AFCRL in-house reports, journal articles, and contractor reports issued from 1 January to 31 March 1970. Abstracts are included.

Download or read book U S Government Research and Development Reports Index written by and published by . This book was released on 1970 with total page 812 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Consolidated Translation Survey written by and published by . This book was released on 1969-05 with total page 738 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Bibliography on the High Temperature Chemistry and Physics of Materials written by and published by . This book was released on 1969 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2710 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth of 2H Silicon Carbide Crystals written by J. Anthony Powell and published by . This book was released on 1969 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2004 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Amorphous and Crystalline Silicon Carbide and Related Materials written by Gary L. Harris and published by Springer. This book was released on 1989-03-08 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.

Download or read book Handbook of Crystal Growth written by Peter Rudolph and published by Elsevier. This book was released on 2014-11-04 with total page 1420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vol 2A: Basic TechnologiesHandbook of Crystal Growth, Second Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated.Vol 2B: Growth Mechanisms and DynamicsHandbook of Crystal Growth, Second Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy.Volume 2A - Presents the status and future of Czochralski and float zone growth of dislocation-free silicon - Examines directional solidification of silicon ingots for photovoltaics, vertical gradient freeze of GaAs, CdTe for HF electronics and IR imaging as well as antiferromagnetic compounds and super alloys for turbine blades - Focuses on growth of dielectric and conducting oxide crystals for lasers and non-linear optics - Topics on hydrothermal, flux and vapour phase growth of III-nitrides, silicon carbide and diamond are explored Volume 2B - Explores capillarity control of the crystal shape at the growth from the melt - Highlights modeling of heat and mass transport dynamics - Discusses control of convective melt processes by magnetic fields and vibration measures - Includes imperative information on the segregation phenomenon and validation of compositional homogeneity - Examines crystal defect generation mechanisms and their controllability - Illustrates proper automation modes for ensuring constant crystal growth process - Exhibits fundamentals of solution growth, gel growth of protein crystals, growth of superconductor materials and mass crystallization for food and pharmaceutical industries