Download or read book Effect of Cu deficient Layer Formation in Cu In Ga Se2 Solar cell Performance written by and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book New Deposition Process of Cu In Ga Se2 Thin Films for Solar Cell Applications written by Himal Khatri and published by . This book was released on 2009 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molybdenum (Mo) is currently the most common material used for Cu(In, Ga)Se2 solar cell back contacts. The first objective of this study is to utilize in-situ and ex-situ characterization techniques to investigate the growth, as well as the physical and chemical properties, of Mo thin films deposited by RF magnetron sputtering onto soda-lime glass (SLG) substrates. The effects of the deposition pressure on the nucleation and growth mechanisms that ultimately influence morphology and grain structure have been studied. Correspondence between real time spectroscopic ellipsometry (RTSE), X-ray diffraction (XRD), atomic force microscopy (AFM), and four-point probe resistivity measurements indicate that increasing deposition pressure leads to smaller average grain sizes and higher oxygen content in the Mo thin films. Changes of the material properties were also evaluated by changing RF power. It is observed that higher RF power, results in higher conductivity films. The second and overall objective of this work is to focus on the deposition and characterization of the Cu(In, Ga)Se2 absorber layer using the hybrid co-sputtering and evaporation process, which has potential for commercial PV. Solar cells were completed with a range of elemental compositions in the absorber layer, keeping a constant profile of Ga and varying Cu concentrations. The slightly Cu deficient Cu(In, Ga)Se2 films of band gap ~1.15 eV fabricated by this process consist of a single chalcopyrite phase and device efficiencies up to 12.4% were achieved for the composition ratios (x, y) = (0.30, 0.88). Correspondence between energy dispersive X-ray spectroscopy (EDS), X-ray diffraction, transmission and reflection (T & R), four-point probe resistivity, and current density-voltage (J-V) measurements indicate that increased Cu concentration leads to the incorporation of a secondary phase Cu2-xSe compound in the Cu(In, Ga)Se2 films, which is detrimental to cell performance. The third objective of this work is to evaluate the Cu2-xSe material properties by employing in-situ RTSE, as well as ex-situ SE and various other characterization techniques. SE revealed that the dielectric function spectra of Cu2-xSe evolve with temperature, providing insights into the evolution of transport properties and critical point structures. At room temperature, semi-metallic behavior of Cu2-xSe thin films was revealed by SE and Hall Effect measurements. These characteristics serve as key inputs for optical modeling of complex layer structures of Cu(In, Ga)Se2 films grown by 2- and 3-step processes.

Download or read book Chalcogenide Photovoltaics written by Roland Scheer and published by John Wiley & Sons. This book was released on 2011-03-31 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: This first comprehensive description of the most important material properties and device aspects closes the gap between general books on solar cells and journal articles on chalcogenide-based photovoltaics. Written by two very renowned authors with years of practical experience in the field, the book covers II-VI and I-III-VI2 materials as well as energy conversion at heterojunctions. It also discusses the latest semiconductor heterojunction models and presents modern analysis concepts. Thin film technology is explained with an emphasis on current and future techniques for mass production, and the book closes with a compendium of failure analysis in photovoltaic thin film modules. With its overview of the semiconductor physics and technology needed, this practical book is ideal for students, researchers, and manufacturers, as well as for the growing number of engineers and researchers working in companies and institutes on chalcogenide photovoltaics.

Download or read book Nanoscale investigation of potential distribution in operating Cu In Ga Se2 thin film solar cells written by Zhenhao Zhang and published by KIT Scientific Publishing. This book was released on 2014-10-16 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: The distribution of the electrostatic potential in and between the materials in Cu(In,Ga)Se2 thin-film solar cells has a major impact on their superior performance. This thesis reported on the nanoscale imaging of the electrostatic potential on untreated cross sections of operating Cu(In,Ga)Se2 solar cells using Kelvin probe force microscopy.

Download or read book Effect of Heat Treatments and Reduced Absorber Layer Thickness on Cu in Ga se2 Thin Film Solar Cells written by Vinodh Chandrasekaran and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The thickness of the Molybdenum back contact layer was increased to see if the amount of Sodium from the substrate had any effect on the device performance. The Ga/In ratio was altered and its effect was also studied. The 0.65um thick devices showed a large reduction in Voc̕s and Jsc̕s. The effect of Selenization time and Selenium flux during Selenization were studied at each of the different thicknesses.

Download or read book Wide Gap Chalcopyrites written by Susanne Siebentritt and published by Springer Science & Business Media. This book was released on 2006-02-25 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chalcopyrites, in particular those with a wide band gap, are fascinating materials in terms of their technological potential in the next generation of thin-film solar cells and in terms of their basic material properties. They exhibit uniquely low defect formation energies, leading to unusual doping and phase behavior and to extremely benign grain boundaries. This book collects articles on a number of those basic material properties of wide-gap chalcopyrites, comparing them to their low-gap cousins. They explore the doping of the materials, the electronic structure and the transport through interfaces and grain boundaries, the formation of the electric field in a solar cell, the mechanisms and suppression of recombination, the role of inhomogeneities, and the technological role of wide-gap chalcopyrites.

Download or read book Alternative Buffer Layer Development in Cu In Ga Se2 Thin Film Solar Cells written by Peipei Xin and published by . This book was released on 2017 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: Cu(In,Ga)Se2-based thin film solar cells are considered to be one of the most promising photovoltaic technologies. Cu(In,Ga)Se2 (CIGS) solar devices have the potential advantage of low-cost, fast fabrication by using semiconductor layers of only a few micrometers thick and high efficiency photovoltaics have been reported at both the cell and the module levels. CdS via chemical bath deposition (CBD) has been the most widely used buffer option to form the critical junction in CIGS-based thin film photovoltaic devices. However, the disadvantages of CdS can’t be ignored - regulations on cadmium usage are getting stricter primarily due to its toxicity and environmental impacts, and the proper handling of the large amount of toxic chemical bath waste is a massive and expensive task. ☐ This dissertation is devoted to the development of Cd-free alternative buffer layers in CIGS-based thin film solar cells. Based on the considerations of buffer layer selection criteria and extensive literature review, Zn-compound buffer materials are chosen as the primary investigation candidates. Radio frequency magnetron sputtering is the preferred buffer deposition approach since it’s a clean and more controllable technique compared to CBD, and is readily scaled to large area manufacturing. ☐ First, a comprehensive study of the ZnSe1-xOx compound prepared by reactive sputtering was completed. As the oxygen content in the reactive sputtering gas increased, ZnSe1-xOx crystallinity and bandgap decreased. It’s observed that oxygen miscibility in ZnSe was low and a secondary phase formed when the O2 / (O2 + Ar) ratio in the sputtering gas exceeded 2%. Two approaches were proposed to optimize the band alignment between the CIGS and buffer layer. One method focused on the bandgap engineering of the absorber, the other focused on the band structure modification of the buffer. As a result, improved current of the solar cell was achieved although a carrier transport barrier at the junction interface still limited the device performance. ☐ Second, an investigation of Zn(S,O) buffer layers was completed. Zn(S,O) films were sputtered in Ar using a ZnO0.7S0.3 compound target. Zn(S,O) films had the composition close to the target with S / (S+O) ratio around 0.3. Zn(S,O) films showed the wurtzite structure with the bandgap about 3.2eV. The champion Cu(In,Ga)Se2 / Zn(S,O) cell had 12.5% efficiency and an (Ag,Cu)(In,Ga)Se2 / Zn(S,O) cell achieved 13.2% efficiency. Detailed device analysis was used to study the Cu(In,Ga)Se2 and (Ag,Cu)(In,Ga)Se2 absorbers, the influence of absorber surface treatments, the effects of device treatments, the sputtering damage and the Na concentration in the absorber. ☐ Finally alternative buffer layer development was applied to an innovative superstrate CIGS configuration. The superstrate structure has potential benefits of improved window layer properties, cost reduction, and the possibility to implement back reflector engineering techniques. The application of three buffer layer options – CdS, ZnO and ZnSe was studied and limitations of each were characterized. The best device achieved 8.6% efficiency with a ZnO buffer. GaxOy formation at the junction interface was the main limiting factor of this device performance. For CdS / CIGS and ZnSe / CIGS superstrate devices extensive inter-diffusion between the absorber and buffer layer under CIGS growth conditions was the critical problem. Inter-diffusion severely deteriorated the junction quality and led to poorly behaved devices, despite different efforts to optimize the fabrication process.

Download or read book Development of Cu In Ga Se2 Solar Cell on Stainless Steel Substrate written by Chantana Jakapan and published by LAP Lambert Academic Publishing. This book was released on 2015-07-03 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electricity power is normally generated by burning fossil fuels, having detrimental impacts on the environment and will be depleted. One of the most appropriate ways to solve the foreseeable world's energy crisis is to utilize the power of the sun. Solar cells, using photovoltaic effect, are of wide interest as they can convert solar energy to electricity. Chalcopyrite based thin-film solar cell is considered as the low-cost and high-efficiency solar cells. One of the most important chalcopyrite compounds for photovoltaic application is Cu(In, Ga)Se2. Fabricating the solar cells on flexible substrates is intriguing, as it can be applied to the roll-to-roll process with the ability to reduce production cost of the solar cells. Consequently, the purpose of the book is to provide the overview for accomplishing the good physical properties and suitable double [Ga]/([Ga]+[In])-grading profiles of Cu(In, Ga)Se2 absorbers on flexible stainless steel substrates for the thin-film solar cells with high conversion efficiency (>15%

Download or read book Optical Physics of Cu In Ga Se2 Solar Cells and Their Layer Components written by Abedl-Rahman Ibdah and published by . This book was released on 2016 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polycrystalline Cu(In1-xGax)Se2 (CIGS) thin film technology has emerged as a promising candidate for low cost and high performance solar modules. The efficiency of CIGS solar cells is strongly influenced by several key factors. Among these factors include Ga composition and its profile in the absorber layer, copper content in this layer, and the solar cell multilayer structure. As a result, tools for the characterization of thin film CIGS solar cells and their layer components are becoming increasingly essential in research and manufacturing. Spectroscopic ellipsometry is a non-invasive technique that can serve as an accurate probe of component layer optical properties and multilayer structures, and can be applied as a diagnostic tool for real-time, in-line, and off-line monitoring and analysis in small area solar cell fabrication as well as in large area photovoltaics manufacturing. Implementation of spectroscopic ellipsometry provides unique insights into the properties of complete solar cell multilayer structures and their layer components. These insights can improve our understanding of solar cell structures, overcome challenges associated with solar cell fabrication, and assist in process monitoring and control on a production line. In this dissertation research, Cu(In,Ga)Se2 films with different Cu contents have been prepared by the one stage co-evaporation process. These films have been studied by real time spectroscopic ellipsometry (RTSE) during deposition, and by in-situ SE at the deposition temperature as well as at room temperature to extract the dielectric functions (e1, e2) of the thin film materials. Analytical expressions for the room temperature dielectric functions were developed, and the free parameters that describe these analytical functions were in turn expressed as functions of the Cu content. As a result of this parameterization, the dielectric function spectra (e1, e2) can be predicted for any desired composition within the range of the samples investigated. This capability was applied for mapping the structural and compositional variations of CIGS thin films deposited over a 10 cm × 10 cm substrate area. In another application presented in this dissertation, a non-invasive method utilizing ex-situ spectroscopic ellipsometry analysis has been developed and applied to determine non-destructively the Ga compositional profile in CIGS absorbers. The method employs parameterized dielectric function spectra (e1, e2) of CIGS versus Ga content to probe the compositional variation with depth into the absorber. In addition, a methodology for prediction of the external quantum efficiency (QE) including optical gains and losses for a CIGS solar cell has been developed. The methodology utilizes ex-situ spectroscopic ellipsometry analysis of a complete solar cell, with no free parameters, to deduce the multilayer solar cell structure non-invasively and simulate optical light absorption in each of the layer components. In the case of high efficiency CIGS solar cells, with minimal electronic losses, QE spectra are predicted from the sum of optical absorption in the active layer components. For such solar cells with ideal photo-generated charge carrier collection, the SE-predicted QE spectra are excellent representation of the measured ones. Since the QE spectra as well as the short circuit current density (Jsc) can be calculated directly from SE analysis results, then the predicted QE from SE can be compared with the experimental QE to evaluate electronic losses based on the difference between the spectra. Moreover, the calculated Jsc can be used as a key parameter for the design and optimization of anti-reflection coating structures. Because the long term production potential of CIGS solar modules may be limited by the availability of indium, it becomes important to reduce the thickness of the CIGS absorber layer. Thickness reduction would reduce the quantity of indium required for production which would in turn reduce costs. A decrease in short-circuit current density (Jsc) is expected, however, upon thinning the CIGS absorber due to incomplete absorption. To clarify the limits of obtainable Jsc in ultra-thin CIGS solar cells with Mo back contacts, optical properties and multilayer structural data are deduced via spectroscopic ellipsometry analysis and used to predict the QE spectra and maximum obtainable Jsc values upon thinning the absorber. Moreover, SE-guided optical design of ultra-thin CIGS solar cells has been demonstrated. In the case of solar cells fabricated on Mo, thinning the absorber in a CIGS solar cell is associated with significant optical losses in the Mo containing back contact layers. This is due in part to the poor optical reflectance of Mo. Such optical losses may be reduced by employing a back contact design with improved reflectance. Thus, alternative novel solar cell structures with ultra-thin absorbers and improved back contact reflectance have been designed and investigated using SE and the optical modeling methods. In addition to optical losses, electronic losses in the ultra-thin solar cells have been evaluated. By separating the absorber layer into sub-layer regions (for example, near-junction, bulk, and near-back-contact) and varying carrier collection probability in these regions, the contribution of each region to the current can be estimated. Based on this separation, the origin of the electronic losses has been identified as near the back contact.

Download or read book Development of Non vacuum and Low cost Techniques for Cu In Ga Se S 2 Thin Film Solar Cell Processing written by Christopher J. Hibberd and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Solar photovoltaic modules provide clean electricity from sunlight but will not be able tocompete on an open market until the cost of the electricity they produce is comparable to thatproduced by traditional methods. At present, modules based on crystalline silicon wafer solarcells account for nearly 90% of photovoltaic production capacity. However, it is anticipatedthat the ultimate cost reduction achievable for crystalline silicon solar cell production will besomewhat limited and that thin film solar cells may offer a cheaper alternative in the longterm. The highest energy conversion efficiencies reported for thin film solar cells have beenfor devices based around chalcopyrite Cu(In, Ga)(Se, S)2 photovoltaic absorbers. The most efficient Cu(In, Ga)(Se, S)2 solar cells contain absorber layers deposited by vacuumco-evaporation of the elements. However, the cost of ownership of large area vacuumevaporation technology is high and may be a limiting factor in the cost reductions achievablefor Cu(In, Ga)(Se, S)2 based solar cells. Therefore, many alternative deposition methods areunder investigation. Despite almost thirty companies being in the process of commercialisingthese technologies there is no consensus as to which deposition method will lead to the mostcost effective product. Non-vacuum deposition techniques involving powders and chemical solutions potentiallyoffer significant reductions in the cost of Cu(In, Ga)(Se, S)2 absorber layer deposition ascompared to their vacuum counterparts. A wide range of such approaches has beeninvestigated for thirty years and the gap between the world record Cu(In, Ga)(Se, S)2 solarcell and the best devices containing non-vacuum deposited absorber layers has closedsignificantly in recent years. Nevertheless, no one technique has demonstrated its superiorityand the best results are still achieved with some of the most complex approaches. The work presented here involved the development and investigation of a new process forperforming one of the stages of non-vacuum deposition of Cu(In, Ga)(Se, S)2 absorber layers. The new process incorporates copper into an initial Group III-VI precursor layer, e.g. indiumgallium selenide, through an ion exchange reaction performed in solution. The ion exchangereaction requires only very simple, low-cost equipment and proceeds at temperatures over1000?C lower than required for the evaporation of Cu under vacuum. In the new process, indium (gallium) selenide initial precursor layers are immersed insolutions containing Cu ions. During immersion an exchange reaction occurs and Cu ionsfrom the solution exchange places with Group III ions in the layer. This leads to theformation of an intimately bonded, laterally homogeneous copper selenide? indium (gallium)selenide modified precursor layer with the same morphology as the initial precursor. These modified precursor layers were converted to single phase chalcopyrite CuInSe2 andCu(In, Ga)Se2 by annealing with Se in a tube furnace system. Investigation of the annealingtreatment revealed that a series of phase transformations, beginning at low temperature, leadto chalcopyrite formation. Control of the timing of the Se supply was demonstrated toprevent reactions that were deemed detrimental to the morphology of the resultingchalcopyrite layers. When vacuum evaporated indium (gallium) selenide layers were used asinitial precursors, solar cells produced from the absorber layers exhibited energy conversionefficiencies of up to 4%. While these results are considered promising, the devices werecharacterised by very low open circuit voltages and parallel resistances. Rapid thermal processing was applied to the modified precursor layers in an attempt tofurther improve their conversion into chalcopyrite material. Despite only a small number ofsolar cells being fabricated using rapid thermal processing, improvements in open circuitvoltage of close to 150mV were achieved. However, due to increases in series resistance andreductions in current collection only small increases in solar cell efficiency were recorded. Rapid thermal processing was also used to demonstrate synthesis of single phase CuInS2from modified precursor layers based on non-vacuum deposited indium sulphide. Non-vacuum deposition methods provide many opportunities for the incorporation ofundesirable impurities into the deposited layers. Analysis of the precursor layers developedduring this work revealed that alkali atoms from the complexant used in the ion exchangebaths are incorporated into the precursor layers alongside the Cu. Alkali atoms exhibitpronounced electronic and structural effects on Cu(In, Ga)Se2 layers and are beneficial in lowconcentrations. However, excess alkali atoms are detrimental to Cu(In, Ga)Se2 solar cellperformance and the problems encountered with cells produced here are consistent with theeffects reported in the literature for excess alkali incorporation. It is therefore expected thatfurther improvements in solar cell efficiency might be achieved following reformulation ofthe ion exchange bath chemistry.

Download or read book Anticipated Performance of Cu In Ga Se2 Solar Cells in the Thin film Limit written by Ana Kanevce and published by . This book was released on 2007 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Effects of Hydrogen Oxygen and Sulfur on The Performance of Cu In Ga Se2 Thin Film Solar Cells and Device Modeling by AMPS 1D Simulation written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Sixteenth European Photovoltaic Solar Energy Conference written by H. Scheer and published by Routledge. This book was released on 2020-11-25 with total page 3235 pages. Available in PDF, EPUB and Kindle. Book excerpt: The European Photovoltaic Solar Energy Conferences are dedicated to accelerating the impetus towards sustainable development of global PV markets. The 16th in the series, held in Glasgow UK, brought together more than 1500 delegates from 72 countries, and provided an important and vital forum for information exchange in the field. The Conference Proceedings place on record a new phase of market development and scientific endeavour in the PV industry, representing current and innovative thinking in all aspects of the science, technology, markets and business of photovoltaics. In three volumes, the Proceedings present some 790 papers selected for presentation by the scientific review committee of the 16th European Photovoltaic Solar Energy Conference. The comprehensive range of topics covered comprise: * Fundamentals, Novel Devices and New Materials * Thin Film Cells and Technologies * Space Cells and Systems * Crystalline Silicon Solar Cells and Technologies * PV Integration in Buildings * PV Modules and Components of PV Systems * Implementation, Strategies, National Programs and Financing Schemes * Market Deployment in Developing Countries These proceedings are an essential reference for all involved in the global PV industry- scientists, researchers, technologists and those with an interest in global market trends. The conference was organised by WIP-Renewable Energies, Munich, Germany.

Download or read book Growing Cu In Ga Se2 Thin Film Solar Cells with High Efficiency and Low Production Costs written by Shihang Yang and published by . This book was released on 2012 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt: Two major approaches are performed to improve solar cell performances. Light trapping by etching AZO top contact for creating pyramid-structures to enhance light scattering. Efficiency is increased by more than 1.5% for solar cells with etched AZO surfaces. Solar cells with efficiency larger than 13% can be grown by using AZO etching. Another approach is by using suitable Ga content in absorber layer. Solar cells with efficiency as high as 14.17% are grown which makes thinner CIGS solar cells very competitive.

Download or read book Solar Cells written by Leonid A. Kosyachenko and published by BoD – Books on Demand. This book was released on 2015-10-22 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains chapters in which the problems of modern photovoltaics are considered. The majority of the chapters provide an overview of the results of research and development of different types of solar cells. Such chapters are completed by a justification for a new solar cell structure and technology. Of course, highly effective solar energy conversion is impossible without an in-depth examination of the solar cell components as physical materials. The relations between structural, thermodynamic, and optical properties of the physical material without addressing the band theory of solids are of both theoretical and practical interest. Requirements formulated for the material are also to be used for maximally efficient conversion of solar radiation into useful work.

Download or read book High efficiency Cu In Ga Se2 Thin Film Solar Cells Without Intermediate Buffer Layers written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling Optical Properties of Thin Film Copper indium Gallium selenide Solar Cells Using Spectroscopic Ellipsometry written by Scott H. Stephens and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this research, the optical properties of Cu(In, Ga)Se 2 thin film solar cells were modeled using variable angle spectroscopic ellipsometry and compared against established optical data from bulk materials. Mo, MoSe 2, Cu(In, Ga)Se 2 and US films were measured individually as the devices were formed layer by layer. Optical data, thickness, surface roughness, and the methodology of preparing and effectively modeling samples have been determined. Diffusion of Na from the Soda Lime glass substrate is evident in the optical constants of the Mo layer. The optical constants of the MoSe 2 layer were found to be dependent upon the deposition conditions. The bandgap of the US layer was higher when deposited on Cu(In, Ga)Se 2 surfaces than when deposited on Mo. This implies that greater lattice strain is present in the US layer of solar cell devices than that of US films previously measured in CdS/Mo structures.