Download or read book Effect of Aqueous Chemical Cleaning on the Si and Silicon Dioxide Surface and Silicon Oxidation Kinetics written by John Martin DeLarios and published by . This book was released on 1989 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Download or read book Rapid Thermal Processing of Semiconductors written by Victor E. Borisenko and published by Springer Science & Business Media. This book was released on 2013-11-22 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J. Chabal and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Download or read book Electrochemistry of Silicon and Its Oxide written by Xiaoge Gregory Zhang and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical processing of silicon and the use of silicon in electrochemical devices (e. g. , sensors and photoelectrochemical cells), the lack of a comprehensive account of the electrochemistry of silicon in aqueous solution at the fundamental level is surprising and somewhat troubling. It is troubling in the sense that the non-photoelectrochemistry of silicon seems “to have fallen through the cracks,” with the result that some of the electrochemical properties of this element are not as well known as might be warranted by its importance in a modern technological society. Dr. Zhang’s book, Electrochemical Properties of Silicon and Its Oxide, will go a long way toward addressing this shortcoming. As with his earlier book on the elect- chemistry of zinc, the present book provides a comprehensive account of the elect- chemistry of silicon in aqueous solution.
Download or read book Handbook of Semiconductor Wafer Cleaning Technology written by Werner Kern and published by William Andrew. This book was released on 1993-12-31 with total page 654 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses semiconductor wafer cleaning and the scientific and technical disciplines associated directly or indirectly with this subject. Intended to serve as a handbook for practitioners and professionals in the field.
Download or read book Extended Abstracts written by Electrochemical Society and published by . This book was released on 1991 with total page 1304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1999 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effect of Surface Orientation on Silicon Oxidation Kinetics written by E. A. Lewis and published by . This book was released on 1986 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is well established that the rate of thermal oxidation of silicon depends on the surface orientation, but a comprehensive model for the role of the surface orientation in the kinetic mechanism is lacking. The results of several experiments designed to develop a better understanding of which surface properties are most important in establishing the oxidation rate are reported. The results indicate that the Si surface atom density is important in the initial stages of oxidation and a revised explanation for the crossover effect is proposed.
Download or read book Ultra Clean Processing of Silicon Surfaces VII written by Paul Mertens and published by Trans Tech Publications Ltd. This book was released on 2005-04-01 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). This book is sub-divided into 10 different topical sections; each dealing with important issues in surface cleaning and preparation.
Download or read book The Influence of Silicon Surface Cleaning Procedures on Silicon Oxidation written by G. Gould and published by . This book was released on 1986 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: The results of experiments which demonstrate the effect of pre-oxidation cleaning of silicon on the kinetics of oxidation for 5 different cleaning procedures are reported. These cleaning treatments include simply rinsing samples as obtained from the manufacturer as well as combinations of NH4OH-H2O2, HCl-H2O2 and HF solutions. The thickness vs. time data for 1 atmosphere oxidations at 980 C is analyzed to determine oxidation rates at thicknesses of 75.0, 275.0 and 405.0nm. Varying rates calculated at low thickness indicate an effect in the initial oxidation regime due to interfacial effects. Rate differences calculated at high thickness indicate a change in oxide structure due to cleaning treatment which is substantiated by ellipsometric measurements of refractive index which indicate a change in oxide density.
Download or read book Handbook for Cleaning for Semiconductor Manufacturing written by Karen A. Reinhardt and published by John Wiley & Sons. This book was released on 2011-04-12 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides an In-depth discussion of surface conditioning for semiconductor applications The Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications provides an in-depth discussion of surface conditioning for semiconductor applications. The fundamental physics and chemistry associated with wet processing is reviewed as well as surface and colloidal aspects of cleaning and etching. Topics covered in this new reference include: Front end line (FEOL) and back end of line (BEOL) cleaning applications such as high-k/metal gate post-etch cleaning and pore sealing, high-dose implant stripping and cleaning, and germanium, and silicon passivation Formulation development practices, methodology and a new directions are presented including chemicals used for preventing corrosion of copper lines, cleaning aluminium lines, reclaiming wafers, and water bonding, as well as the filtering and recirculating of chemicals including reuse and recycling Wetting, cleaning, and drying of features, such as high aspect ratio features and hydrophilic surface states, especially how to dry without watermarks, the abilities to wet hydrophobic surfaces and to remove liquid from deep features The chemical reactions and mechanisms of silicon dioxide etching with hydrofluoric acid, particle removal with ammonium hydroxide/hydrogen peroxide mixture, and metal removal with hydrochloric acid The Handbook of Cleaning for Semiconductor Manufacturing: Fundamentals and Applications is a valuable resource for any engineer or manager associated with using or supplying cleaning and contamination free technologies for semiconductor manufacturing. Engineers working for semiconductor manufacturing, capital equipment, chemicals, or other industries that assures cleanliness of chemicals, material, and equipment in the manufacturing area will also find this handbook an indispensible reference.
Download or read book The Surface Properties of Oxidized Silicon written by Else Kooi and published by Springer. This book was released on 2013-12-21 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Silicon Dioxide Film Formation on Clean Silicon Surfaces written by and published by . This book was released on 1992 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt: Future generations of silicon-based microelectronic circuits will require ever-smaller devices, new classes of devices, and demands for higher reliability, thereby requiring further refinements of silicon planar technology. An understanding of the kinetics of film formation and optical properties of ultrathin silicon dioxide films on a parent silicon substrate is necessary to measure and predict the behavior of such devices. A high-speed ellipsometer and growth chamber were constructed to measure the growth rate of SiO2 on hot silicon substrates from which the prior native oxide had been removed. Data gathered from temperatures between 800 deg C and 1000 deg C for three substrate orientations (100), (111), and (1 10) reveal the dependence of the refractive index of SiO2 as a function of oxide thickness. No orientation effects were found. Kinetic measurements reveal two new linear growth regions with activation energies of El = 0.603 eV and Ell = 0.794 eV, respectively. X-ray photoelectron spectroscopy provides chemical evidence of oxygen supersaturation and a coesite- like structure near the oxide-substrate interface. The results will provide baseline data necessary for radiation hardening assessments, data to aid the development of the next generation of ellipsometric thin film standards, and will permit process designers to develop thinner device oxides. The instrumentation developed for this work may have commercial applicability for process control feedback and in situ quality assurance. SiO2 Films, Si, Ellipsometry, X-ray Photoelectron Spectroscopy Kinetics of Film Formation, High Temperature Oxidation.
Download or read book Surface Orientation Effects on Silicon Oxidation Kinetics written by Eleanor Ann Lewis and published by . This book was released on 1987 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Oxidation Studies A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si SiO2 Interface written by E. A. Irene and published by . This book was released on 1988 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: The formation of the thin silicon dioxide (SiO2) films via thermal oxidation on single crystal silicon substrates has been found to depend on the method of Si cleaning, impurities on the Si surface, the Si crystal orientation, film stress, and the availability of electrons at the Si surface. Recent studies on these topics are recounted along with a framework for understanding. No fully acceptable model for thin Si02 formation yet exists, but recent studies lead in new directions towards this goal.
Download or read book Proceedings of the Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing written by Richard E. Novak and published by The Electrochemical Society. This book was released on 1996 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt:
