Download or read book Dot Paper written by Bms Khadi and published by . This book was released on 2019-12-14 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt: 100 pages Dotted Paper for drawing, writing notes, journaling, doodling, list making, creative writing, and capturing ideas. Grab yours today.A massive 8.5 by 11 inch dot grid notebook.If you hate starting a new dot grid journal then this is the book for you. A large size so you can plan everything - and a huge 100 pages. This one is going to last you a long time!Notebook Details: SIZE: 8.5 X 11 inchesPAGES: 100 Pages.PAPER: White Dotted Paper.COVER: Soft Paperback Cover Matt

Download or read book Tactual Perception written by William Schiff and published by Cambridge University Press. This book was released on 1982-03-31 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: An overview of knowledge about tactual-haptic perception.

Download or read book Dot Paper Notebook written by See Lander and published by . This book was released on 2019-07-30 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Dot Paper Detail: Size: 8.5 inches x 11 inches 5 mm square grid, metric light gray dots dot spacing: 0.5 cm double-sided 161 pages Good quality white paper This Book is for writing, drawing, sketching, making notes, writing with pens or pencils with letters, hands and creative writing.

Download or read book The Image Processing Handbook written by John C. Russ and published by CRC Press. This book was released on 2018-09-03 with total page 1035 pages. Available in PDF, EPUB and Kindle. Book excerpt: Consistently rated as the best overall introduction to computer-based image processing, The Image Processing Handbook covers two-dimensional (2D) and three-dimensional (3D) imaging techniques, image printing and storage methods, image processing algorithms, image and feature measurement, quantitative image measurement analysis, and more. Incorporating image processing and analysis examples at all scales, from nano- to astro-, this Seventh Edition: Features a greater range of computationally intensive algorithms than previous versions Provides better organization, more quantitative results, and new material on recent developments Includes completely rewritten chapters on 3D imaging and a thoroughly revamped chapter on statistical analysis Contains more than 1700 references to theory, methods, and applications in a wide variety of disciplines Presents 500+ entirely new figures and images, with more than two-thirds appearing in color The Image Processing Handbook, Seventh Edition delivers an accessible and up-to-date treatment of image processing, offering broad coverage and comparison of algorithms, approaches, and outcomes.

Download or read book Official Gazette of the United States Patent and Trademark Office written by United States. Patent and Trademark Office and published by . This book was released on 2001 with total page 1438 pages. Available in PDF, EPUB and Kindle. Book excerpt:

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Download or read book Connections Maths 8 written by Edward Duffy and published by Pascal Press. This book was released on 2003 with total page 670 pages. Available in PDF, EPUB and Kindle. Book excerpt: Connections Maths 8 is the second of two dynamic textbooks and CD-ROM packages that give complete coverage of the new Mathematics Stage 4 syl labus for New South Wales. Features: outcomes at the start of every chapter a dynamic full colour design that clear ly distinguishes theory, examples, exercises, and features care fully graded exercises with worked examples and solutions linked to each cartoons offering helpful hints working mathematicall y strands that are fully integrated. These also feature regularly in cha llenging sections designed as extension material which also contain inte resting historical and real life context a chapter review to re vise and consolidate learning in each chapter speed skills sect ions to revise and provide mental arithmetic skills problem sol ving application strategies with communication and reasoning through an inquiry approach a comprehensive Diagnostic test providing a cu mulative review of learning in all chapters, cross referenced to each ex ercise integrated technology activities literacy skill s develop language skills relevant to each chapter fully linked icons to accompanying CD-ROM. the student CD-ROM accompanying this textbook can be used at school or at home for further explanation a nd learning. Each CD-ROM contains: animated w orked examples movies related to selected topics offering expla nation for visual learners. These feature bright, energetic, young prese nters in appealing locations technology files featuring formatt ed spreadsheets and geometry demonstrations the entire textbook, with hyperlinks to the above features.

Download or read book Magnetooptical properties of dilute nitride nanowires written by Mattias Jansson and published by Linköping University Electronic Press. This book was released on 2020-06-18 with total page 77 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured III-V semiconductors have emerged as one of the most promising materials systems for future optoelectronic applications. While planar III-V compounds are already at the center of the ongoing lighting revolution, where older light sources are replaced by modern white light LEDs, fabricating such materials in novel architectures, such as nanowires and quantum dots, creates new possibilities for optoelectronic applications. Not only do nanoscale structures allow the optically active III-V materials to be integrated with silicon microelectronics, but they also give rise to new fascinating properties inherent to the nanoscale. One of the key parameters considered when selecting materials for applications in light-emitting and photovoltaic devices is the band gap energy. While alloying of conventional III-V materials provides a certain degree of band gap tunability, a significantly enhanced possibility of band gap engineering is offered by so-called dilute nitrides, where incorporation of a small percentage of nitrogen into III-V compounds causes a dramatic down-shift of the conduction band edge. In addition, nitrogen-induced splitting of the conduction band in dilute nitrides can be utilized in intermediate band solar cells, belonging to the next generation of photovoltaic devices. For any material to be viable for optoelectronic applications, detailed knowledge of the electronic structure of the material, as well as a good understanding of carrier recombination processes is vital. For example, alloying may not only cause changes in the electronic structure but can also induce disorder. Disorder-induced potential fluctuations may alter charge carrier and exciton dynamics, and may even induce quantum confinement. Moreover, various defects in the material may introduce detrimental non-radiative (NR) states in the band gap deteriorating radiative efficiency. It is evident that, due to their different growth mechanisms, such properties could be markedly different in nanowires as compared to their planar counterparts. In this thesis, I aim to describe the electronic structure of dilute nitride nanowires, and its effects on the optical properties. Firstly, we investigate the electronic structure, and the structural and optical properties of novel GaNAsP nanowires, with a particular focus on the dominant recombination channels in the material. Secondly, we show how short-range fluctuations in the nitrogen content lead to the formation of quantum dots in dilute nitride nanowires, and investigate their electronic structure. Finally, we investigate the combined charge carrier and exciton dynamics of the quantum dots and effects of defects in their surroundings. Before considering individual sources of NR recombination, it is instructive to investigate the overall effects of nitrogen incorporation on the structural properties of the nanowires. In Paper I, we show that nitrogen incorporation up to 0.16% in Ga(N)AsP nanowires does not affect the overall structural quality of the material, nor does nitrogen degrade the good compositional uniformity of the nanowires. It is evident from our studies, however, that nitrogen incorporation has a strong and complex effect on recombination processes. We first show that nitrogen incorporation in GaNAsP nanowires reduces the NR recombination at room temperature as compared to the nitrogen-free nanowires (Paper I). This is in stark contrast to dilute nitride epilayers, where nitrogen incorporation enhances NR recombination. The reason for this difference is that in nanowires the surface recombination, rather than recombination via point defects, is the dominant NR recombination mechanism. We suggest that the nitrogen-induced suppression of the NR surface recombination in the nanowires is due to nitridation of the nanowire surface. Another NR recombination channel common in III-V nanowires is caused by the presence of structural defects, such as rotational twin planes and stacking faults. Interestingly, while nitrogen incorporation does not appear to affect the density of such structural defects, increasing nitrogen incorporation reduces the NR recombination via the structural defects (Paper II). This is explained by competing trapping of excited carriers/excitons to the localized states characteristic to dilute nitrides, and at nitrogen-induced NR defects. This effect is, however, only present at cryogenic temperatures, while at room temperature the NR recombination via the structural defects is not the dominant recombination channel. Importance of point defects in carrier recombination is highlighted in Paper III. Using the optically detected magnetic resonance technique, we show that gallium vacancies (VGa) that are formed within the nanowire volume act as efficient NR recombination centers, degrading optical efficiency of the Ga(N)AsP-based nanowires. Interestingly, while the defect formation is promoted by nitrogen incorporation, it is also readily present in ternary GaAsP nanowires. This contrasts with previous studies on planar structures, where VGa was not formed in the absence of nitrogen, unless subjected to irradiation by high-energy particles or heavy n-type doping. This, again, highlights how the defect formation is strikingly different in nanowires as compared to planar structures, likely due to the different growth processes. Potential fluctuations in the conduction band, caused by non-uniformity of the nitrogen incorporation, is characteristic to dilute nitrides and is known to cause exciton/carrier localization. We find that in dilute nitride nanowires, such fluctuations at the short range cause three-dimensional quantum confinement of excitons, resulting in optically active quantum dots with spectrally ultranarrow and highly polarized emission lines (Paper IV). A careful investigation of such quantum dots reveals that their properties are strongly dependent on the host material (Papers V, VI). While the principal quantization axis of the quantum dots formed in the ternary GaNAs nanowires is preferably oriented along the nanowire axis (Paper V), it switches to the direction perpendicular to the nanowire axis in the quaternary GaNAsP nanowires (Paper VI). Another aspect illustrating the influence of the host material on the quantum-dot properties is the electronic character of the captured hole. In both alloys, we show coexistence of quantum dots where the captured holes are of either a pure heavy-hole character or a mixed light-hole and heavy-hole character. In the GaNAs quantum dots, the main cause of the light- and heavy-hole splitting is uniaxial tensile strain induced by a combination of lattice mismatch with the nanowire core and local alloy fluctuations (Paper V). In the GaNAsP quantum dots, however, we suggest that the main mechanism for the light- and heavy-hole splitting is local fluctuations in the P/As ratio (Paper VI). Using time correlation single-photon counting, we show that the quantum dots in these dilute nitride nanowires behave as single photon emitters (Paper VI), confirming the three-dimensional quantum confinement of the emitters. Finally, since the quantum dots are formed by fluctuations mainly in the conduction band, only electrons are preferentially captured in the 0D confinement potential, whereas holes are expected to be mainly localized through the Coulomb interaction once an electron is captured by the quantum dot. In Paper VII, we investigate this rather peculiar capture mechanism, which we show to lead to unipolar, negative charging of the quantum dot. Moreover, we demonstrate that carrier capture by some quantum dots is strongly affected by the presence of defects in their local surroundings, which further alters the charge state of the quantum dot, where formation of the negatively charged exciton is promoted at the expense of its neutral counterpart. This underlines that the local surroundings of the quantum dots may greatly affect their properties and illustrates a possible way to exploit the defects for charge engineering of the quantum dots. In summary, in this thesis work, we identify several important non-radiative recombination processes in dilute nitride nanowires that can undermine the potential of these novel nanostructures for future optoelectronic applications. The gained knowledge could be found useful for designing strategies to mitigate these harmful processes, thereby improving the efficiency of future light-emitting and photovoltaic devices based on these nanowires. Furthermore, we uncover a set of optically bright quantum dot single-photon emitters embedded in the dilute nitride nanowires, and reveal their unusual electronic structure with strikingly different confinement potentials between electrons and holes. Our findings open a new pathway for charge engineering of the quantum dots in nanowires, attractive for applications in e.g. quantum computation and optical switching.

Download or read book Paper Trade Journal written by and published by . This book was released on 1928 with total page 862 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book New Trends in Applied Artificial Intelligence written by Hiroshi G. Okuno and published by Springer. This book was released on 2007-07-18 with total page 1213 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes the refereed proceedings of the 20th International Conference on Industrial and Engineering Applications of Artificial Intelligence and Expert Systems, IEA/AIE 2007, held in Kyoto, Japan. Coverage includes text processing, fuzzy system applications, real-world interaction, data mining, machine learning chance discovery and social networks, e-commerce, heuristic search application systems, and other applications.

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Download or read book Connected Mathematics written by and published by . This book was released on 2004 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contains a complete sixth grade mathematics curriculum with connections to other subject areas.

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Download or read book Revival The Handbook of Software for Engineers and Scientists 1995 written by Paul W Ross and published by CRC Press. This book was released on 2018-05-04 with total page 1781 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Software for Engineers and Scientists is a single-volume, ready reference for the practicing engineer and scientist in industry, government, and academia as well as the novice computer user. It provides the most up-to-date information in a variety of areas such as common platforms and operating systems, applications programs, networking, and many other problem-solving tools necessary to effectively use computers on a daily basis. Specific platforms and environments thoroughly discussed include MS-DOS®, Microsoft® WindowsTM, the Macintosh® and its various systems, UNIXTM, DEC VAXTM, IBM® mainframes, OS/2®, WindowsTM NT, and NeXTSTEPTM. Word processing, desktop publishing, spreadsheets, databases, integrated packages, computer presentation systems, groupware, and a number of useful utilities are also covered. Several extensive sections in the book are devoted to mathematical and statistical software. Information is provided on circuits and control simulation programs, finite element tools, and solid modeling tools.

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