Download or read book Doping and Isolation of GaN InGaN and InAlN Using Ion Implantation written by and published by . This book was released on 1995 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Doping and Isolation of GaN InGaN and InAIN Using Ion Implantation written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Status of Ion Implantation Doping and Isolation of III V Nitrides written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Implantation Doping of GaN written by and published by . This book was released on 1996 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation has played an enabling role in the realization of many high performance photonic and electronic devices in mature semiconductor materials systems such as Si and GaAs. This can also be expected to be the case in III-Nitride based devices as the material quality continues to improve. This paper reviews the progress in ion implantation processing of the III-Nitride materials, namely, GaN, AlN, InN and their alloys. Details are presented of the successful demonstrations of implant isolation as well as n- and p-type implantation doping of GaN. Implant doping has required activation annealing at temperatures in excess of 1,000 C. The nature of the implantation induced damage and its response to annealing is addressed using Rutherford Backscattering. Finally, results are given for the first demonstration of a GaN device fabricated using ion implantation doping, a GaN junction field effect transistor (JFET).

Download or read book Implant Activation and Redistribution of Dopants in GaN written by and published by . This book was released on 1996 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN and related III-Nitride materials (IN, an) have recently been the focus of extensive research for photonic and electronic device applications. As this material system matures, ion implantation doping and isolation is expected to play an important role in advance device demonstrations. To this end, we report the demonstration of implanted p-type doping with Mg+P and Ca as well as n-type doping with Si in GaN. These implanted dopants require annealing 105 approximately1100 °C to achieve electrical activity, but demonstrate limited redistribution at this temperature. The redistribution of other potential dopants in GaN (such as Be, Zn, and Cd) will also be reported. Results for a GaN junction field effect transistor (JFET), the first GaN device to use implantation doping, will also be presented.

Download or read book Ion Implantation Doping and High Temperature Annealing of GaN written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Die waldtypen armeniens written by G. D. Jaroschenko and published by . This book was released on 1936 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book P and N type Implantation Doping of GaN with Ca and O written by and published by . This book was released on 1996 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Nitride Semiconductors and Devices Electronic and Optical Processes in Nitrides written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 883 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.

Download or read book Selective Area P type Doping in Gallium Nitride Using Ion Implantation for High Power Applications written by Yekan Wang and published by . This book was released on 2022 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: Magnesium ion implantation and subsequent activation annealing shows promise as an effective p-type doping method in Gallium Nitride (GaN). This dissertation relates implant-induced defects and the electrical performance. The implantation process introduces an elastic strain purely orthogonal to the (0001). Complete strain recovery is achieved by annealing at 1300 °C for 10 min (one GPa N2 overpressure) for dose level up to 1 1015 cm-2. However, extended defects such as stacking faults, dislocation loops, and inversion domains form during the anneal. Critical extended defects in the form of inversion domains were found to contain electrically inactive Mg after annealing at temperatures of 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. A key finding of this work was to demonstrate that annealing at temperatures above 1300 °C eliminates the presence of the Mg-rich inversion domains. While other residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis shows no sign of Mg segregation at dislocation loops or other defects. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Electrical measurements show that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C, which points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperatures (e"1400 °C) annealing cycles to activate Mg acceptors. Novel characterization methods combining high resolution x-ray scattering and transmission electron microscopy were developed to understand the implant-induced strain recovery process and the evolution of extended defect structures after the dopant activation anneal. It was found that homoepitaxial GaN on high quality native substrates is necessary for clearly assessing the implant-induced defects by separating them from the pre-existing intrinsic defects. Results from this work are expected to bring the understanding of the key processing steps to achieve high activation efficiency selective area p-type doping for vertical GaN device structures in a scalable framework

Download or read book Electrical Isolation of GaN by Ion Implantation Damage written by C. Uzan-Saguy and published by . This book was released on 1999 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation Into Gan and Alinn written by Abdul Majid and published by LAP Lambert Academic Publishing. This book was released on 2012 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: A detailed and systematic study of ion implanted MOCVD grown wurtzite gallium nitride (GaN) and aluminum indium nitride (AlInN) is conducted. As-grown samples were characterized using XRD and Hall measurements to check the structural and electrical properties of the samples. Neon (Ne), manganese (Mn) and cerium (Ce) ions were implanted into the materials with different doses in ranges 1014 9x1015, 1014 5x1016 and 3x1014 2x1015cm-2 respectively. Using rapid thermal annealing (RTA) furnace implanted GaN samples were annealed at 800, 850, 900 and 1000oC and implanted AlInN samples were annealed at 750 and 850 oC for lattice recovery and activation of the dopants. Structural and optical characterizations were made using Rutherford backscattering spectroscopy (RBS), X-Ray diffraction (XRD), Photoluminescence (PL), Optical transmission and Raman scattering spectroscopy. Moreover, magnetic characterization of Mn and Ce implanted samples was also carried out with vibrating sample magnetometer (VSM) and superconducting quantum interference device (SQUID)."

Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.

Download or read book Ion Implantation of Epitaxial GaN Films written by and published by . This book was released on 1996 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single-crystal GaN films grown on AlN buffer layers previously deposited on 6H-SiC(0001) were studied for radiation damage and its recovery using Rutherford backscattering/channeling, photoluminescence, and cross-sectional TEM. The highest fluence of (1e15 cm−2) 110 keV Mg and 160 keV Si produced little damage at implantation temperature 550 C. RT damage was higher for same fluences compared to 550 C implantation. The damage was partially annealed by RTA at 1000 C, however, this was not enough to recover the PL signal even for the lowest fluence (1e14 cm−2). XTEM of as-implanted samples revealed small clusters of defects extended beyond the projected ion range. To recover damage completely, perhaps one needs to go either much higher RTA temperature and/or implant samples in a smaller fluence increment and anneal in between implants to recover the damage.

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Download or read book GaN and ZnO based Materials and Devices written by Stephen Pearton and published by Springer Science & Business Media. This book was released on 2012-01-14 with total page 497 pages. Available in PDF, EPUB and Kindle. Book excerpt: The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors