Download or read book Electronic Properties of Doped Semiconductors written by B.I. Shklovskii and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.

Download or read book Heavily Doped Semiconductors written by V. I. Fistul and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.

Download or read book Doping in III V Semiconductors written by E. Fred Schubert and published by E. Fred Schubert. This book was released on 2015-08-18 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.

Download or read book Delta doping of Semiconductors written by E. F. Schubert and published by Cambridge University Press. This book was released on 1996-03-14 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.

Download or read book Rare Earth and Transition Metal Doping of Semiconductor Materials written by Volkmar Dierolf and published by Woodhead Publishing. This book was released on 2016-01-23 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics

Download or read book Rare Earth Doped Semiconductors Volume 301 written by Gernot S. Pomrenke and published by . This book was released on 1993-09 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.

Download or read book Rare Earth Doped Semiconductors II Volume 422 written by S. Coffa and published by . This book was released on 1996 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.

Download or read book Polarization Effects in Semiconductors written by Colin Wood and published by Springer Science & Business Media. This book was released on 2007-10-16 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronic semiconductor devices.

Download or read book Electronic Devices and Circuits written by BALBIR KUMAR and published by PHI Learning Pvt. Ltd.. This book was released on 2007-05-08 with total page 728 pages. Available in PDF, EPUB and Kindle. Book excerpt: Designed as a text for the students of various engineering streams such as electronics/electrical engineering, electronics and communication engineering, computer science and engineering, IT, instrumentation and control and mechanical engineering, this well-written text provides an introduction to electronic devices and circuits. It introduces to the readers electronic circuit analysis and design techniques with emphasis on the operation and use of semiconductor devices. It covers principles of operation, the characteristics and applications of fundamental electronic devices such as p-n junction diodes, bipolar junction transistors (BJTs), and field effect transistors (FETs). What distinguishes this text is that it explains the concepts and applications of the subject in such a way that even an average student will be able to understand working of electronic devices, analyze, design and simulate electronic circuits. This comprehensive book provides : • A large number of solved examples. • Summary highlighting the important points in the chapter. • A number of Review Questions at the end of each chapter. • A fairly large number of unsolved problems with answers.

Download or read book Optical Semiconductor Devices written by Mitsuo Fukuda and published by John Wiley & Sons. This book was released on 1998-12-24 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: Eine Einführung in das Gebiet der optoelektronischen pn-Halbleiterbauelemente aus den Blickwinkeln der Materialeigenschaften, der Funktionsprinzipien, der Herstellung und Verpackung, der Zuverlässigkeit und der Anwendung. Das Buch ist für Anfänger gedacht, daher sind die Erläuterungen in geeigneter Weise vereinfacht und theoretische Grundlagen wurden zugunsten anwendungsspezifischer Aspekte zum Teil übersprungen. (12/98)

Download or read book Physics of Functional Materials written by Hasse Fredriksson and published by John Wiley & Sons. This book was released on 2008-09-15 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by academics with more than 30 years experience teaching physics and material science, this book will act as a one-stop reference on functional materials. Offering a complete coverage of functional materials, this unique book deals with all three states of the material, providing an insightful overview of this subject not before seen in other texts. Includes solved examples, a number of exercises and answers to the exercises. Aims to promote understanding of the subject as a basis for higher studies. The use of mathematically complicated quantum mechanical equations will be minimized to aid understanding. For Instructors & Students: Visit Wiley’s Higher Education Site for: Supplements Online Resources Technology Solutions Instructors may request an evaluation copy for this title.

Download or read book Power Semiconductors written by Stefan Linder and published by CRC Press. This book was released on 2006-06-02 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explaining the physics and characteristics of power semiconductor devices, this book presents an overview of various classes of power semiconductors. It provides insight into how they work and the characteristics of the various components from the viewpoint of the user, going through all modern power semiconductor device types. The physics are explained in reasonable detail, providing the precise amount of information needed to fully understand the component's behavior in the application. Exploring the specific strengths and weaknesses of each device type, the book demonstrates how these devices fit into the system and how they will behave there.

Download or read book Heavily Doped 2D Quantized Structures and the Einstein Relation written by Kamakhya P. Ghatak and published by Springer. This book was released on 2014-07-30 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.

Download or read book Effective Electron Mass in Low Dimensional Semiconductors written by Sitangshu Bhattacharya and published by Springer Science & Business Media. This book was released on 2012-10-06 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.

Download or read book State of the Art Program on Compound Semiconductors SOTAPOCS XLII and Processes at the Compound Semiconductor Solution Interface written by P. C. Chang and published by The Electrochemical Society. This book was released on 2005 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Progress in Inorganic Chemistry written by Kenneth D. Karlin and published by John Wiley & Sons. This book was released on 2005-06-14 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: The cutting edge of scientific reporting . . . PROGRESS in Inorganic Chemistry Nowhere is creative scientific talent busier than in the world ofinorganic chemistry experimentation. Progress in InorganicChemistry continues in its tradition of being the most respectedavenue for exchanging innovative research. This series providesinorganic chemists and materials scientists with a forum forcritical, authoritative evaluations of advances in every area ofthe discipline. With contributions from internationally renownedchemists, this latest volume offers an in-depth, far-rangingexamination of the changing face of the field, providing atantalizing glimpse of the emerging state of the science. "This series is distinguished not only by its scope and breadth,but also by the depth and quality of the reviews." -Journal of the American Chemical Society "[This series] has won a deservedly honored place on the bookshelfof the chemist attempting to keep afloat in the torrent of originalpapers on inorganic chemistry." -Chemistry in Britain CONTENTS OF VOLUME 54 * Atomlike Building Units of Adjustable Character: Solid-State andSolution Routes to Manipulating Hexanuclear Transition MetalChalcohalide Clusters (Eric J. Welch and Jeffrey R. Long) * Doped Semiconductor Nanocrystals: Synthesis, Characterization,Physical Properties, and Applications (J. Daniel Bryan and DanielR. Gamelin) * Stereochemical Aspects of Metal Xanthane Complexes: MolecularStructures and Supramolecular Self-Assembly (Edward R. T. Tiekinkand Ionel Haiduc) * Trivalent Uranium: A Versatile Species for Molecular Activation(Ilia Korobkov and Sandro Gambarotta) * Comparison of the Chemical Biology of NO and HNO: An InorganicPerspective (Katrina M. Miranda and David A. Wink) * Alterations of Nucleobase pKa Values upon Metal Coordination:Origins and Consequences (Bernhard Lippert) * Functionalization of Myoglobin (Yoshihito Watanabe and TakashiHayashi)