Download or read book Donor assisted Resonant Tunneling in Semiconductor Heterostructures written by João Wesley Lopes Sakai and published by . This book was released on 1997 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Donor assisted Resonant Tunnelling in Semiconductor Heterostructures written by Joao Wesley Lopes Sakai and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Resonant Tunneling in Semiconductors written by L.L. Chang and published by Springer. This book was released on 2012-10-23 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.

Download or read book Resonant Tunneling in III V Semiconductor Heterostructures written by Ravindra Manohar Kapre and published by . This book was released on 1991 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Theoretical Studies of Resonant Tunneling in Semiconductor Heterostructures in an Applied Constant Electric Field written by Shaune Stephen Allen and published by . This book was released on 1992 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Theoretical Investigations of Electronic Surface States and Resonant Tunneling in Semiconductor Heterostructures written by Nawej Mwez and published by . This book was released on 1992 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Resonant Tunneling of Electrons in Asymmetric Triple barrier Semiconductor Heterostructures written by Kevin Lamonte Jones and published by . This book was released on 1992 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Theory of Tunneling in Semiconductor Heterostructures written by Vasudevan Sankaran and published by . This book was released on 1992 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Interfaces at the Sub Nanometer Scale written by H.W.M Salemink and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

Download or read book Resonant Tunneling in Semiconductors written by L. L. Chang and published by . This book was released on 1992-02-01 with total page 558 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Theory of Resonant Tunneling Characteristics in Semiconductor Heterostructure Electron Devices written by Chomsik Lee and published by . This book was released on 1993 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Resonant Tunneling in Double Barrier Heterostructures written by Caton Philip Little and published by . This book was released on 1997 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Resonant Tunnelling in Semiconductor Heterostructures written by Mark Levence Leadbeater and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Resonant Tunneling in Polar III nitride Heterostructures written by Jimy Joe Encomendero Risco and published by . This book was released on 2020 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: The outstanding material properties of III-nitride semiconductors has prompted an intense research activity focused on the engineering of resonant tunneling transport within this revolutionary family of wide-bandgap semiconductors. From resonant tunneling diode (RTD) oscillators to quantum cascade lasers (QCLs), nitride devices hold the promise for the realization of high-power ultra-fast sources of terahertz (THz) radiation. Although considerable research effort has been devoted over the past two decades, nitride-based resonant tunneling transport has been demonstrated only during the last four years. In this work, I present the various aspects of heterostructure design, epitaxial growth and device fabrication techniques, which have led to the first unequivocal demonstration of robust resonant tunneling transport and reliable room temperature negative differential conductance in III-Nitride heterostructures. This thesis constitutes a comprehensive work spanning all fronts of experimental, theoretical, and computational research focused on the fundamental physics and engineering of resonant tunneling transport in polar III-nitride semiconductors. Our combined experimental and theoretical approach, allowed us to shed light into the physics of electronic quantum interference phenomena in polar semiconductors which had remained hidden until now, resulting in the discovery of new tunneling features, unique in polar RTDs. The robustness of our experimental data enabled us to track these unique features to the broken inversion symmetry, which generates the built-in spontaneous and piezoelectric polarization fields. After identifying the intimate connection between the polarization fields and the resonant tunneling current, we harness this relationship to develop a completely new approach to measure the magnitude of the internal polarization fields via electron resonant tunneling transport. To get further insight into the asymmetric tunneling injection originated by the polar active region, we present an analytical theory for tunneling transport across polar heterostructures. A general expression for the resonant tunneling current which includes contributions from coherent and sequential tunneling processes is presented. After the application of this new theory to the case of GaN/AlN RTDs, their experimental current-voltage characteristics are reproduced over both bias polarities. This agreement allows us to elucidate the role played by the internal polarization fields on the amplitude of the electronic transmission and broadening of the resonant tunneling line shape. Our analytical model is then employed for the design of high-current density GaN/AlN RTDs which are harnessed as the gain elements of the first microwave oscillators and harmonic multipliers driven by III-nitride RTDs. The findings presented here pave the way for the realization of III-Nitride-based high-speed oscillators and quantum cascade lasers that operate at wavelengths that, until now, remain unreachable by other semiconductor materials.

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 934 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Coherence of Resonant Tunneling in Heterostructures written by Peter J. Price and published by . This book was released on 1987 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photon assisted Resonant Tunneling Through Variably Spaced Superlattice Energy Filters written by A. Larsson and published by . This book was released on 1991 with total page 1 pages. Available in PDF, EPUB and Kindle. Book excerpt: