Download or read book Disruptive Wide Bandgap Semiconductors Related Technologies and Their Applications written by Yogesh Kumar Sharma and published by BoD – Books on Demand. This book was released on 2018-09-12 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.
Download or read book Disruptive Wide Bandgap Semiconductors Related Technologies and Their Applications written by Yogesh Kumar Sharma and published by . This book was released on 2018 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, ""ICSCRM,"" was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.
Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Download or read book Handbook of Silicon Carbide Materials and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 2023-07-10 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Download or read book Wide Bandgap Semiconductor Based Micro Nano Devices written by Jung-Hun Seo and published by MDPI. This book was released on 2019-04-25 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
Download or read book Wide Bandgap Semiconductor Materials and Devices 20 written by S. Jang and published by The Electrochemical Society. This book was released on 2019-05-17 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions includes papers based on presentations from the symposium "Wide Bandgap Semiconductor Materials and Devices 20," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.
Download or read book Next Generation Integrated Behavioral and Physics based Modeling of Wide Bandgap Semiconductor Devices for Power Electronics written by Michael Robert Hontz and published by . This book was released on 2019 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation investigates the modeling of next generation wide bandgap semiconductors in several domains. The first model developed is of a GaN Schottky diode with a unique AlGaN cap layer. This model is developed using fundamental physical laws and analysis and allows for the characteristics of the diode to be designed by adjusting aspects of the diode's fabrication and structure. The second model is of a lateral GaN HEMT and is developed using TCAD simulation software in order to fit experimental data based on static characteristics. This procedure endeavors to simultaneously fit several output characteristics of the HEMT device to facilitate the applicability and evaluation of the device for power electronics applications. This model is then used to analyze the effects of various substrate material choices on the performance of the GaN HEMT in a switching application. Finally, a link between TCAD models of devices and a circuit simulation platform is demonstrated. This system allows for simulation and testing of devices in complex power electronic systems while maintaining a direct dependence between the system-level performance and the physical parameters of the device. This link between TCAD and circuit simulation is then used to develop an iterative optimization procedure to design a semiconductor device for a particular power electronic application. The work demonstrated here develops procedures to create high-fidelity models of wide bandgap semiconductor devices and enables the purposeful design of devices for their intended application with a high degree of confidence in meeting system requirements. It is through this focusing of device modeling and design, that the rate of technological transfer of next-generation semiconductor devices to power electronics systems can be improved.
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Download or read book Electrostatic Engineering in Wide bandgap Semiconductors for High Power Applications written by Wenshen Li and published by . This book was released on 2020 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compared with silicon, wide-bandgap semiconductors offer much higher power efficiency for high-power applications, primarily due to the much higher breakdown field. While the performance advantage has already been offered by vertical SiC and lateral GaN-on-Si devices, even higher promises from vertical GaN devices and ultrawide-bandgap semiconductors such as _-Ga2O3 have not been fully delivered. One of the major reasons is the challenge in managing the high electric field in those materials, without established selective-area p-type doping techniques as in GaN, or effective p-type doping alone as in _-Ga2O3. In this dissertation, we tackle this challenge in vertical GaN and Ga2O3 power devices by investigating novel electric-field management techniques and doping-related issues. The first half the work is centered around leakage-current reduction in power Schottky barrier diodes (SBDs) through the reduced surface field (RESURF) effect, which is arguably necessary for kilovolt-class operations. Two novel device structures are designed and implemented, including i) a trench junction-barrier-Schottky diode (JBSD) structure in GaN that possess the desired RESURF effect without needing for selective-area p-doping, and ii) a trench SBD structure in Ga2O3 that achieves significant leakage-current reduction thus a record-high power figure-of-merit of up to 0.95 GW/cm2 among Ga2O3 power devices, but without the need for p-doping. Furthermore, the ideal reverse leakage characteristics in Ga2O3 SBDs is convincingly identified, enabling the calculation of the practical maximum surface electric field in SBDs - an important concept we unambiguously proposed for the first time. The second half of the work is related to vertical power transistors. Using the MBE-regrowth technique, two novel designs of vertical GaN transistors are demonstrated, including GaN trench MOSFETs with regrown channel and GaN PolarMOS - a VDMOS-like transistor with unique polarization-induced (PI) bulk doping. The main challenge in the regrown lateral p-n junctions in these devices is explicitly revealed by interrogating the regrowth interface, where a significant amount of donor-like charges are found. In addition, sidewall activation and incorporations of PI doping in buried p-type layers are realized for voltage-blocking purposes. In Ga2O3, vertical fin power transistors are developed, showing a high breakdown voltage of over 2.6 kV and a normally-off operation without needing for p-doping. Overall, while p-type doping is extremely beneficial for wide-bandgap vertical power devices, it might not be absolutely necessary, provided that proper electrostatic designs and alternative voltage-blocking junctions are effectively implemented.
Download or read book Modern Microwave and Millimeter Wave Power Electronics written by Gregory S. Nusinovich and published by John Wiley & Sons. This book was released on 2005-04-19 with total page 885 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive study of microwave vacuum electronic devices and their current and future applications While both vacuum and solid-state electronics continue to evolve and provide unique solutions, emerging commercial and military applications that call for higher power and higher frequencies to accommodate massive volumes of transmitted data are the natural domain of vacuum electronics technology. Modern Microwave and Millimeter-Wave Power Electronics provides systems designers, engineers, and researchers-especially those with primarily solid-state training-with a thoroughly up-to-date survey of the rich field of microwave vacuum electronic device (MVED) technology. This book familiarizes the R&D and academic communities with the capabilities and limitations of MVED and highlights the exciting scientific breakthroughs of the past decade that are dramatically increasing the compactness, efficiency, cost-effectiveness, and reliability of this entire class of devices. This comprehensive text explores a wide range of topics: Traveling-wave tubes, which form the backbone of satellite and airborne communications, as well as of military electronic countermeasures systems Microfabricated MVEDs and advanced electron beam sources Klystrons, gyro-amplifiers, and crossed-field devices "Virtual prototyping" of MVEDs via advanced 3-D computational models High-Power Microwave (HPM) sources Next-generation microwave structures and circuits How to achieve linear amplification Advanced materials technologies for MVEDs A Web site appendix providing a step-by-step walk-through of a typical MVED design process Concluding with an in-depth examination of emerging applications and future possibilities for MVEDs, Modern Microwave and Millimeter-Wave Power Electronics ensures that systems designers and engineers understand and utilize the significant potential of this mature, yet continually developing technology. SPECIAL NOTE: All of the editors' royalties realized from the sale of this book will fund the future research and publication activities of graduate students in the vacuum electronics field.
Download or read book Multi level Integrated Modeling of Wide Bandgap Semiconductor Devices Components Circuits and Systems for Next Generation Power Electronics written by Andrew Joseph Sellers and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation investigates the propagation of information between models of disparate computational complexity and simulation domains with specific focus on the modeling of wide bandgap semiconductors for power electronics applications. First, analytical physics models and technology computer-aided design numerical physics models are presented. These types of physics models are contrasted by ease of generation and computational complexity. Next, processes generating transient simulations from these models are identified. Mixed-mode simulation and behavioral device models are established as two available options. Of these two, behavioral models are identified as the method producing superior computational performance due to their much-reduced simulation time. A comparison of switching performance for two wide bandgap field-effect transistors manufactured with the same process is next presented. Empirical and simulated switching results demonstrate that available models predict the slew rates reasonably well, but fail to accurately capture ringing frequencies. This is attributed to two primary causes; the modeling tool used for this comparison is incapable of producing a sufficiently high-quality fit to ensure accurate prediction and the devices are sensitive to parasitic values beyond the measurement uncertainty of the characterization hardware. To remedy this, a two-fold approach is necessary. First, a new model must be generated which is more capable of predicting steady-state performance. Second, a characterization procedure must be produced which tunes parameters beyond what is possible with empirical characterization. To the first point, a novel model based on the Curtice model is presented. The novel model adapts the Curtice model by adding gate-bias dependence to model parameters and introducing an exponential smoothing function to account for the gradual transition from linear to saturation exhibited by some wide bandgap field-effect transistors. Care is taken to model forward conduction, reverse conduction, and transfer characteristics with high accuracy. Non-linear capacitances are then modeled using a charge-based lookup table demonstrated by previous work in the literature to be effective. Thermal performance is accounted for with both the incorporation of thermal scaling factors and a thermal RC network to account for joule-heating. The proposed model is capable of capturing device steady-state and small-signal performance more precisely than previous models. A tuning and optimization procedure is next presented which is capable of tuning device model parasitic values within uncertainty bounds of characterization data. This method identifies the need for and introduces new model parameters intended to account for dispersive phenomena to a first degree. Pairing this method with the aforementioned model, significant improvements in transient agreement can be achieved for fast-switching devices. A method is also presented which identifies and quantifies the impact of parameters on transient performance. This process can be used to remove model parameters from the tuning set and possibly decouple parameter tuning. The propagation of these fully-tuned device and circuit models to the system level is next discussed. The cases of a buck converter and double pulse test are used as examples of dc switching circuits which may be used for switching characterization and to account for switching losses. Simulation is used to demonstrate that these circuits, when using similar components, produce comparable results. This allows the use of double pulse tests for switching characterization in simulation, thus eliminating the need for quasi-steady-state conditions to be reached in converter simulation. Methods are proposed for the inclusion of this data into system-level models such that simulation time will be minimally impacted. When used in conjunction, the methods presented in this chapter are sufficient to propagate information from the physics level all the way through to the system level. If specific circuits and system components are known, the impact of including a theoretical device can be assessed. This lends itself to advanced design of each type of model by analyzing the interactions predicted by various levels of models. This has serious implications for accelerating the deployment of wide bandgap semiconductor in power electronics by addressing the primary concerns of reliability and ease of implementation. By using these methods, devices, circuits, and systems can each be optimized to fully benefit from the theoretical advantages presented by wide bandgap semiconductor materials.
Download or read book Wide Bandgap Semiconductors for MEMS and Related Process Technologies written by Marcel Placidi and published by . This book was released on 2010 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by . This book was released on 2021 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III-V, and other compound semiconductor devices and integrated circuits.
Download or read book Advanced Nanoelectronics written by Muhammad Mustafa Hussain and published by John Wiley & Sons. This book was released on 2019-01-04 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.
Download or read book Processing of Wide Band Gap Semiconductors written by Stephen J. Pearton and published by Elsevier. This book was released on 2000-06-01 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.
Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Download or read book Wide Bandgap Based Devices written by Giovanni Verzellesi and published by Mdpi AG. This book was released on 2022-05-06 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.
