Download or read book Diode Lasers written by D. Sands and published by CRC Press. This book was released on 2004-10-30 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: The compact size, reliability, and low cost of diode lasers lead to applications throughout modern technology-most importantly in modern optical telecommunication systems. This book presents a comprehensive introduction to the principles and operation of diode lasers. It begins with a review of semiconductor physics and laser fundamentals, before describing the most basic homojunction laser. Later chapters describe more advanced laser types and their applications, including the most recently developed and exotic laser designs. The author's intuitive style, coupled with an extensive set of worked examples and sample problems, make this an outstanding introduction to the subject.

Download or read book DIODES LASER A PUITS QUANTIQUE written by Béatrice Saint-Cricq and published by . This book was released on 1987 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt: LE TRAITEMENT THEORIQUE DES MECANISMES D'EMISSION DANS LES PUITS QUANTIQUES S'APPUIE SUR UN MODELE ORIGINAL POUR LES REGLES DE SELECTION LORS DE LA TRANSITION. SUR CETTE BASE, LA METHODOLOGIE DE CALCUL DU GAIN OPTIQUE ET DES CARACTERISTIQUES GAIN-COURANT EST PRESENTEE ET EST COMPLETEE PAR L'ANALYSE DES PROPRIETES DE PROPAGATION ET DE LA CONDITION D'OSCILLATION LASER. UNE METHODOLOGIE GLOBALE DE DETERMINATION DE LA DENSITE DE COURANT DE SEUIL EST PRESENTEE ET LES REGLES D'OPTIMISATION DES DISPOSITIFS SONT DISCUTEES. EN CE QUI CONCERNE LA REALISATION DES DIODES LASER, LES PARAMETRES TECHNOLOGIQUES LES PLUS SENSIBLES SONT ETUDIES ET LA PROCEDURE D'ELABORATION DEFINIE POUR LA CROISSANCE DES PUITS QUANTIQUES

Download or read book Conception de diodes laser puits quantique GRIN SCH GaAIAs GaAs written by Stéphane Fourtine and published by . This book was released on 1990 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Du puits quantique la diode laser written by Said Ridene and published by . This book was released on 2016-06-24 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Contribution a la modelisation de diodes laser a puits quantiques contraints pour telecommunications optiques written by Olivier Gilard and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Conception de diodes laser puits quantique GRIN SCH GaAlAs GaAs written by Stéphane Fourtine and published by . This book was released on 1990 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: LE TRAVAIL RAPPORTE DANS CE MEMOIRE A CONSISTE A DEVELOPPER ET A VALIDER UN LOGICIEL DE CONCEPTION DE DIODES LASER A PUITS QUANTIQUE DE TYPE GRIN-SCH EN GAALAS/GAAS. LE LOGICIEL QWT PERMET D'OBTENIR POUR UNE STRUCTURE QUELCONQUE LA CARACTERISTIQUE GAIN-COURANT, DE DETERMINER LA DENSITE DE COURANT DE SEUIL, LA LONGUEUR D'ONDE D'EMISSION LASER ET D'ANALYSER L'ENSEMBLE DE CES GRANDEURS EN FONCTION DE LA TEMPERATURE. DANS LE MODELE, LA PHYSIQUE DU PUITS QUANTIQUE EST TRAITEE DE FACON APPROFONDIE AINSI QUE LES MECANISMES D'EMISSION ET DE RECOMBINAISON DANS LE PUITS ET DANS LES COUCHES DE CONFINEMENT. L'ACCENT A ETE MIS EN PARTICULIER SUR L'IDENTIFICATION ET L'EVALUATION DES SOURCES DE PERTES QUI PARTICIPENT A L'AUGMENTATION DE LA DENSITE DE COURANT DE SEUIL. UNE ETUDE SYSTEMATIQUE DE L'EVOLUTION DES COURANTS DE FUITE EN FONCTION DES DIFFERENTS PARAMETRES DE LA STRUCTURE A PERMIS D'ETABLIR DES CRITERES D'OPTIMISATION DE LA DENSITE DE COURANT DE SEUIL ET DU COEFFICIENT DE STABILITE EN FONCTION DE LA PLAGE DE FONCTIONNEMENT EN TEMPERATURE SOUHAITE ET DU GAIN AU SEUIL CHOISI. ENFIN, UNE ETUDE EXPERIMENTALE PORTANT SUR TROIS SERIES DE DIODES LASER ELABOREES AU LAAS AYANT DES COMPOSITIONS EN ALUMINIUM DANS LE PUITS DE 0%, 15% ET 20% A PERMIS DE VALIDER LE MODELE DEVELOPPE. L'EXPLOITATION SIMULTANEE DES RESULTATS EXPERIMENTAUX ET THEORIQUES NOUS A DONNE UNE ESTIMATION DES PERTES INTERNES DE NOS STRUCTURES ET AINSI UNE APPRECIATION DE LA QUALITE DE NOTRE TECHNOLOGIE. LA COMPARAISON THEORIE-EXPERIENCE DES VARIATIONS EN TEMPERATURE DE LA DENSITE DE COURANT DE SEUIL, DE LA LONGUEUR D'ONDE D'EMISSION ET DU PARAMETRE DE STABILITE T#0 ONT MONTRE LA VALIDITE DES MODELES THEORIQUES DEVELOPPES

Download or read book Diodes Laser Pour Les Telecommunications Optiques written by and published by Ed. Techniques Ingénieur. This book was released on with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Quantum Well Lasers written by Peter S. Zory Jr. and published by Elsevier. This book was released on 2012-12-02 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist.* The first comprehensive book-length treatment of quantum well lasers* Provides a detailed treatment of quantum well laser basics* Covers strained quantum well lasers* Explores the different state-of-the-art quantum well laser types* Provides key information on future laser technologies

Download or read book Mod lisation de diodes laser puits quantiques contraints GaInAs mettant dans la gamme des 980 nm written by Hélène Leymarie (physicienne) and published by . This book was released on 1994 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Conception et r alisation par pitaxie par jets mol culaires de diodes laser puits quantique GaAs AIGaAs ruban nervur mettant dans le spectre visible written by Françoise Chatenoud and published by . This book was released on 1988 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Realization of High Power Diode Lasers with Extremely Narrow Vertical Divergence written by Agnieszka Pietrzak and published by Cuvillier Verlag. This book was released on 2012-04-18 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: The doctoral thesis deals with high power InGaAs/GaAsP/AlGaAs quantum well diode lasers grown on a GaAs substrate with emission wavelengths in the range of 1050 nm – 1150 nm. The objective of this thesis is the development of diode lasers with extremely narrow vertical laser beam divergence without any resulting decrease in the optical output power compared to current state of the art devices. The work is focused on the design of the internal laser structure (epitaxial structure), with the goal of optical mode expansion (thus reduction of the beam divergence), and the experimental investigation of the electro-optical properties of the processed laser devices. Diagnosis of the factors limiting the performance is also performed. The optical mode expansion is realized by increasing the thickness of the waveguide layers. Structures with a very thick optical cavity are named in this work as Super Large Optical Cavity structures (SLOC). The vertical optical mode is modeled by solving the one-dimensional waveguide equation, and the far-field profiles are obtained from the Fourier transform of the electrical field at the laser facet (near-field). Calculations are performed by using the software tool QIP. The electro-optical properties (such as vertical electrical carrier transport and power-voltagecurrent characteristics, without self-heating effect) are simulated using the WIAS-TeSCA software. Both software tools are described in this thesis. The lasers chips, grown by means of MOVPE and processed as broad area single emitters, are experimentally tested under three measurement conditions. First, uncoated and unmounted laser chips with various lengths are characterized under pulsed operation (1.5 μs, 5 kHz) in order to obtain the internal parameters of the laser structure. In the second part of the laser characterization, the facet-coated and mounted devices with large (4 - 8 mm long) Fabry-Perot resonators are tested under quasi-continuous wave operation (500 μs, 20 Hz). Finally, these devices are also tested under ‘zero-heat’ conditions (300 ns pulse duration, 1 kHz repetition rate). The ‘zero-heat’ test is performed in order to investigate the factors, other than overheating of the device, that limit the maximum output power. All measurements are performed at a heat-sink temperature of 25°C. The measurement techniques used to characterize the electro-optical properties of the laser and the laser beam properties are also described. More specifically, the influence of the material composition and the thickness of the waveguide layers on the vertical beam divergence angle (perpendicular to the epitaxial structure) and on the electro-optical properties of the laser is discussed. It is shown that, due to the large cross section of the investigated laser chips, catastrophic optical mirror damage (COMD) is strongly reduced and that one of the major factors limiting the maximum optical power of the discussed diode lasers is weak carrier confinement in the active region leading to enhanced carrier and optical losses due to carrier accumulation in the thick waveguide. The reason for the vertical carrier leakage is a low effective barrier between the quantum well and the GaAs waveguide. Moreover, it is shown that the carrier confinement in the active region can be strengthened in three ways. Firstly, the QW depth is increased for lasers emitting at longer wavelength (here ~ 1130 nm). Secondly, utilizing a higher number of QWs lowers the threshold carrier density per QW. In this case, the electron Fermi-level shifts towards lower energies for lower threshold currents and thus the effective barrier heights are increased. Thirdly, in lasers emitting especially at wavelengths shorter than 1130 nm (around 1064 nm, a wavelength commercially interesting) the quantum wells are shallower and thus the effective barrier is lower. It is shown that AlGaAs waveguides are required to improve the carrier confinement. The AlGaAs alloys provide higher conduction and lower valence band edge energies of the bulk material. Consequently, the potential barrier against carrier escape from the QW to the waveguide is increased. Considering the mode expansion in the SLOC structures, it is shown, in simulation and experimentally, that the multi-quantum well active region, due to its high average refractive index, contributes significantly to the guiding of the modes. The optical mode is stronger confined in active regions with a higher number of quantum wells as well as in structures based on AlGaAs waveguides which are characterized by a lower refractive index compared to GaAs material. The increased mode confinement leads to a reduced equivalent vertical spot-size and results in a wider divergence angle of the laser beam. Moreover, by increasing the thickness of the waveguide layers the active region acts more and more as a waveguide itself thus preventing a further narrowing of the vertical far-field. As a new finding, it is presented that the introduction of low-refractive index quantum barriers (LIQB), enclosing the high-refractive index quantum wells, lowers the average refractive index of the multi-quantum well active region and thus reduces the beam divergence (the invention is content of a German Patent Application DEA102009024945). Through systematic model-based experimental investigations of a series of laser diode structures, the vertical beam divergence was reduced from 19° to 8.6° at full width at half maximum (FWHM) and from 30° to 15°, at 95% power content. The achieved vertical farfield angle is smaller, by a factor of ~3, than state-of-the-art laser devices. The 8 mm long and 200 μm wide single emitters based on the investigated SLOC structures deliver more than 30 W peak-power in quasi-continuous wave mode. The large equivalent spot-size together with the facet passivation prevent COMD failure and the maximum measured power is limited due to the overheating of the device. Moreover, a 4 mm long and 200 μm wide single emitter tested under ‘zero-heat’ condition delivers 124 W power. The maximal measured power was limited by the current supply.

Download or read book Quantum Well Laser Array Packaging written by Jens W. Tomm and published by McGraw Hill Professional. This book was released on 2007 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum-well lasers offer the promise of lightning-fast data communications - 10-to-100 times faster than broadband. While the architecture for these devices already exists, they suffer from material packaging problems. This book addresses this critical issue. It offers screening and packaging techniques useful for researchers.

Download or read book R alisation par MBE et caract risation physique de diodes lasers puits quantiques GaInAsSb AlGaAsSb mettant vers 2 3 micro m written by Arnaud Perona and published by . This book was released on 2002 with total page 199 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Quantum Confined Laser Devices written by Peter Blood and published by Oxford University Press. This book was released on 2015 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent treatment of both quantum dot and quantum well structures taking full account of their dimensionality, which provides the reader with a complete account of contemporary quantum confined laser diodes. It includes plenty of illustrations from both model calculations and experimental observations. There are numerous exercises, many designed to give a feel for values of key parameters and experience obtaining quantitative results from equations. Some challenging concepts, previously the subject matter of research monographs, are treated here at this level for the first time. To request a copy of the Solutions Manual, visit http: //global.oup.com/uk/academic/physics/admin/solutions.

Download or read book Contribution l tude de la largeur de mode dans les diodes laser DBR puits quantiques deux sections written by Juan Manuel Campos Sandoval and published by . This book was released on 2004 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: La largeur de mode statique des lasers à semi-conducteur DBR à deux sections à puits quantiques présente un comportement complexe et son étude est moins répandue que celle des diodes laser accordables de façon continue. Une modélisation originale de la formule de la largeur de mode et du paramètre alpha de Henry fait donc l'objet d'une étude particulière dans la thèse. Les effets du bruit quantique et du bruit thermique sur la largeur de mode font aussi l'objet d'une étude spéciale dans la modélisation. Les mesures de largeur de mode ont été menées à bien sur plusieurs modèles de diodes laser DBR à deux sections à puits quantiques et sont en bon accord avec les simulations du modèle proposé. Un autre objectif de la thèse a été celui de la conception et l'utilisation d'un analyseur de spectre ultrarapide pour sources accordables. Cet analyseur est particulièrement intéressant du point de vue des mesures en laboratoire comme de son intégration comme système de contrôle. Des comparaisons avec les analyseurs basés sur des structures interférométriques de type Fabry-Pérot ont été réalisées pour valider le choix d'un analyseur à division de front d'onde.

Download or read book Diode Lasers and Photonic Integrated Circuits written by Larry A. Coldren and published by John Wiley & Sons. This book was released on 2012-03-02 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importance in the areas of optical communication, storage, and sensing. Using the the same well received theoretical foundations of the first edition, the Second Edition now introduces timely updates in the technology and in focus of the book. After 15 years of development in the field, this book will offer brand new and updated material on GaN-based and quantum-dot lasers, photonic IC technology, detectors, modulators and SOAs, DVDs and storage, eye diagrams and BER concepts, and DFB lasers. Appendices will also be expanded to include quantum-dot issues and more on the relation between spontaneous emission and gain.

Download or read book Electrical Characterization of Gasb Based Semiconductors for 2 4 Micrometers Diode Laser Applications written by Daniel K. Johnstone and published by . This book was released on 1996-06-01 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: Deep Level Transient Spectroscopy (DLTS) was used to characterize the band offsets and deep levels in MBE grown GaSb-based semiconductors that are used in 2-4 micrometers laser diode structures. One of several deep level traps found in Al(x)Ga(1-x)As(y)Sb(1-y) (x=0, 0.5, 0.6, 1.0) is a GaSb double acceptor trap. Progress is also made in establishing the model for the DX center in this material. The degree of compensation of the donor related DX center by GaSb affect where donors are situated, giving preference to one configuration over the many other possible configurations. One minority trap 320 meV below the conduction band, and six hole traps 24, 76, 108, 122, 224, and 276 meV above the valence band were found in the Ga(0.85)In(0.15)As(0.12)Sb(0.88) using DLTS measurements. It is believed that the minority trap level at 320 meV and the hole trap level at 276 meV originate from the same trap, making it the most efficient non-radiative recombination center. Extrapolating a series of quantum well emission energies measured by DLTS (based on Boltzmann's approximation) to a point where the approximation is valid, results in a valence band offset of 0. 52 eV between Ga(0.81)In(0.19)As(0.12)Sb(0.88) and Al(09)Ga(0.1)AsSb lattice matched to GaSb.