Download or read book Diffusion of Boron Into Silicon from an Oxide Source written by P. J. Gregory and published by . This book was released on 1970 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The effects of making oxide on the diffusion of boron into silicon written by Shuja Ahmad Abbasi and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Model for Boron Diffusion Into Silicon written by MIchael Calhoun Winton and published by . This book was released on 1973 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Integrated Silicon Device Technology Diffusion written by Research Triangle Institute and published by . This book was released on 1964 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effects of Masking Oxide on the Diffusion of Boron Into Silicon written by S. A. Abbasi and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).
Download or read book Variability of Closed box Diffusion of Boron Into Silicon written by E. P. DUDLEY and published by . This book was released on 1965 with total page 2 pages. Available in PDF, EPUB and Kindle. Book excerpt: A study of the variability of the closed-box diffusion of boron into silicon has been made, using boric acid and silicic acid mixtures as boron sources. Two dilute sources (0.1 wt-pct boric acid and 10 wt-pct boric acid) have been examined in detail to determine how well junction depths, sheet resistivities, and surface concentrations could be reproduced. The experiments were designed to emphasize the contribution of the mass transfer and methods of measurement to the error, and to deemphasize the effect of source-to-source variations. In general, the 10 wt-pct source provided the more reproducible performance, allowing the placement of junctions to within =1/3 microns, control of sheet resistivities to within roughly =30 pct and control of surface concentrations to within a factor of 5 at the level of 3x10 to the 19th power atoms/cu cm. Diffusion coefficients and activation energies for the diffusion of boron in silicon calculated from the two sets of data were in acceptable agreement with the published values. (Author).
Download or read book Diffusion of Boron in Silicon Using Borosilica Glasses as Sources written by Stephen Wai-Yan Lai and published by . This book was released on 1972 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis of the Redistribution of Boron in Silicon During a Thermal Oxidation Governed by a Linear parabolic Growth Law written by Lawrence Alan Hall and published by . This book was released on 1973 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Diffusion of Ion implanted Boron in Silicon Dioxide written by Chiu-Yuen Jacob Ng and published by . This book was released on 1984 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Boron Diffusion in Silicon from Metal Boride Sources written by James G. Ryan and published by . This book was released on 1988 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Concentration Profiles of Two step Diffusions of Boron Into Silicon written by Edward Paul Dudley and published by . This book was released on 1967 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Investigation of Open Tube Boron Diffusion Into Silicon from the Liquid Source Boron Tribromide written by Gerald Michael Oleszek and published by . This book was released on 1968 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion of Boron and Phosphorus in Silicon written by Teh Ming Ou and published by . This book was released on 1965 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents some experimental results for producing controlled PN and NPN diffused structures in silicon by varying the strength of the diffusion sources. Boron diffusions were carried out in a N2 atmosphere at 1200°C with 10%, 20%, 30% and 40% B203 in silicic acid as sources. Phosphorus diffusions were carried out at 1150°C with a P205, source at temperatures of 220°C, 300°C, 400°C and 500°C and 02 as a carrier gas. For boron diffusions, the surface concentration of the boron impurity atoms diffused into an N-type silicon wafer varied from 2.18 x 1017 to 1.45 x 1020 atoms/cm3 as the composition of the source was changed. Similarly, for phosphorus diffusions, the surface concentration of phosphorus impurity atoms diffused into a P-type silicon wafer varied from 1.8 x 1018 to 9.5 x 1021 atoms/cm3 as the temperature of the source was changed. Post-diffusion, which consists of heating a silicon wafer previously diffused with impurity atoms, was investigated to impurity atoms. structures were determine the Using these fabricated by redistribution of the results, NPN and FNP double diffusions.
Download or read book NBS Special Publication written by and published by . This book was released on 1970 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Si SiO2 System written by P. Balk and published by Elsevier Publishing Company. This book was released on 1988 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.
Download or read book Diffusion of Boron in Silicon written by Colin Graham Hart and published by . This book was released on 1971 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
