Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Atomic Diffusion in Semiconductors written by D. Shaw and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 615 pages. Available in PDF, EPUB and Kindle. Book excerpt: The diffusion or migration of atoms in matter, of whatever form, is a basic consequence of the existence of atoms. In metals, atomic diffusion has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures. Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy. The first attempt to present a systematic account of semiconductor diffusion processes was made by Boltaks [11 in 1961. During the decade since Boltaks' book appeared much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline lattices. To this end, exhaustive compilations of empirical data have been avoided as these are available elsewhere [2, 31 : attention has been limited to considering evidence capable of yielding insight into the physical processes concerned in atomic diffusion.
Download or read book Diffusion in Silicon written by Fred H. Wohlbier and published by Trans Tech Publications Ltd. This book was released on 1986-01-01 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect and Diffusion Forum Vol. 47
Download or read book Diffusion in Silicon A Seven Year Retrospective written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2005-07-15 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt: This collection of abstracts of experimental and theoretical papers on the subject of diffusion in silicon is intended to complement earlier volumes (DDF153-155) which covered the previous decades work on the same topic. The abstracts are grouped according to the diffusing species in question. The latter comprise Ag, Al, As, Au, B, Ba, Be, C, Ca, Cl, Co, Cr, Cu, Er, F, Fe, Ge, H, He, Hf, In, Ir, K, Mg, Mn, Mo, N, Na, Nb, Ni, O, P, Pb, Pt, Rb, Sb, Se, Si, SiH3, Sn, Ti, V, Yb and Zn with regard to bulk diffusion, Ag, Au, Ba, Cl, Cu, Er, F, Ga, Ge, In, O, Pb, Sb, Si, SiH3, Sn and Y with regard to surface diffusion, H with regard to grain-boundary diffusion, and self-diffusion in liquid Si.
Download or read book Introduction to Diffusion in Semiconductors written by Brian Tuck and published by . This book was released on 1974 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusivity in Silicon 1953 to 2009 written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2010-04-21 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is essentially an update of previous compilations of information on the diffusivity of elements in semiconductor-grade silicon. It subsumes the data contained in B.L.Sharmas monograph on Diffusion in Semiconductors (Trans Tech Publications, 1970), plus the data contained in Diffusion and Defect Data (Diffusion in Silicon) Volume 45 (1986), Defect and Diffusion Forum (Diffusion in Silicon - 10 years of Research) Volumes 153-155 (1998), Defect and Diffusion Forum (Diffusion in Silicon - a Seven-Year Retrospective) Volume 241 (2005) and the latest data from recent Semiconductor Retrospectives: Defect and Diffusion Forum, Volumes 245-246, Volumes 261-262, Volume 272 and Volume 282. In addition, the resultant 400 items of data were analysed in the hope of finding some unifying correlation. It was indeed found that all of the points (each the average of many independent measurements) seemed to fall on a number of distinct straight lines passing through the origin of a plot of activation energy versus atomic radius. However, it remained unclear how these correlations could be explained.
Download or read book Diffusion in Semiconductors Other than Silicon Compilation written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2011-02-21 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect and Diffusion Forum Vol. 308
Download or read book Atomic Diffusion in III V Semiconductors written by Brian Tuck and published by CRC Press. This book was released on 2021-05-31 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.
Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).
Download or read book Diffusion in Semiconductors written by Boris Iosifovich Boltaks and published by . This book was released on 1963 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion of Metals in Silicon Dioxide written by John David McBrayer and published by . This book was released on 1983 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Diffusion in III V Semiconductors written by Brian Tuck and published by CRC Press. This book was released on 2021-05-30 with total page 245 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.
Download or read book Deep Centers in Semiconductors written by Sokrates T. Pantelides and published by CRC Press. This book was released on 1992-11-30 with total page 952 pages. Available in PDF, EPUB and Kindle. Book excerpt: Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
Download or read book Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals written by Oleg Velichko and published by World Scientific. This book was released on 2019-11-05 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Download or read book Integrated Silicon Device Technology Diffusion written by Research Triangle Institute and published by . This book was released on 1964 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion in Silicon written by D. J. Fisher and published by Trans Tech Publication. This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents a thorough treatment of the subject, covering a full decade of progress in the understanding of Diffusion in Silicon.
Download or read book The Si SiO2 System written by P. Balk and published by Elsevier Publishing Company. This book was released on 1988 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.
