Download or read book Development of Silicon Nanowire Field Effect Transistors written by Prathyusha Nukala and published by . This book was released on 2011 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanowire Field Effect Transistors Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Download or read book Nanowire Field Effect Transistor FET written by Antonio García-Loureiro and published by . This book was released on 2021 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.
Download or read book Silicon Nanowire Transistors written by Ahmet Bindal and published by Springer. This book was released on 2016-02-23 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI.
Download or read book Sensing with Silicon Nanowire Field effect Transistors written by Oren S. Knopfmacher and published by . This book was released on 2011 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Nanowire Field Effect Transistors written by Oren Shirak and published by . This book was released on 2008 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanowires written by Anqi Zhang and published by Springer. This book was released on 2016-07-26 with total page 327 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive summary of nanowire research in the past decade, from the nanowire synthesis, characterization, assembly, to the device applications. In particular, the developments of complex/modulated nanowire structures, the assembly of hierarchical nanowire arrays, and the applications in the fields of nanoelectronics, nanophotonics, quantum devices, nano-enabled energy, and nano-bio interfaces, are focused. Moreover, novel nanowire building blocks for the future/emerging nanoscience and nanotechnology are also discussed.Semiconducting nanowires represent one of the most interesting research directions in nanoscience and nanotechnology, with capabilities of realizing structural and functional complexity through rational design and synthesis. The exquisite control of chemical composition, morphology, structure, doping and assembly, as well as incorporation with other materials, offer a variety of nanoscale building blocks with unique properties.
Download or read book A Simulation Study of Silicon Nanowire Field Effect Transistors FETs written by and published by . This book was released on 2007 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract Silicon planar MOSFETs are approaching their scaling limits. New device designs are being explored to replace the existing planar technology. Among the possible new device designs are Double Gate (DG) FETs, FinFETs, Tri-Gate FETs and Omega- Gate FETs. The Silicon Nanowire Gate All Around (GAA) FET stands out as one of the most promising FET designs due to its maximum gate effect in controlling the short channel effects. Recent developments such as synthesis of highly ordered nanowires and fabrication of nanowires as small as 1nm in diameter have illustrated the progress possible in silicon nanowire technology In this study we have explored the silicon nanowire FET as a possible candidate to replace the currently planar MOSFETs. In this thesis we investigated the silicon nanowire FET device and compared its performance with that of a double gate (DG) FET. The software used for the study assumed quantum-ballistic transport (NanoWire), which was developed at Purdue University. Initially, we presented a comparison of Nanowire FET with DG FET with for devices with same physical parameters. It was seen that superior subthreshold characteristics are exhibited by a silicon nanowire FET. We also conducted an optimization study for the 25 nm node from the ITRS report. The final device was optimized for both High Performance and Low Operating Power applications. A further study on future technology nodes down to the 14 nm node was performed which revealed short channel effects becomes significant at gate lengths ~ 5 nm even for a silicon nanowire device. Finally, a process variation study was conducted in comparison with a FinFET device. It was concluded that a silicon nanowire FET shows less sensitivity to process variation except it has higher sensitivity in variation with the diameter at less than ~4 nm than for FinFET where significant quantum effects set in. Variation with the gate length was found to be much less sensitive for the silicon nanowire FET because of its superior gate control characteristics.
Download or read book Lithographically Defined Silicon Nanowire Field Effect Transistors for Label free Biosensing written by Fern Yuen Yoon and published by . This book was released on 2008 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Nanowire Field effect Transistors for Sensing Applications written by Alexey Tarasov and published by . This book was released on 2012 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Towards Silicon Nanowire Field effect Transistors written by Martin Enderlein and published by . This book was released on 2009* with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Understanding Silicon Nanowire Field effect Transistors for Biochemical Sensing written by Ralph Stoop and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Testing of Silicon Nanowire Field Effect Transistors for Sensing Applications written by Charalampos Papakonstantinopoulos and published by . This book was released on 2016 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanowire Field Effect Transistor FET written by Antonio García-Loureiro and published by MDPI. This book was released on 2021-02-16 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.
Download or read book Label Free Biosensing written by Michael J. Schöning and published by Springer. This book was released on 2018-07-20 with total page 485 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume summarizes the state-of-the-art technologies, key advances and future trends in the field of label-free biosensing. It provides detailed insights into the different types of solid-state, label-free biosensors, their underlying transducer principles, advanced materials utilized, device-fabrication techniques and various applications. The book offers graduate students, academic researchers, and industry professionals a comprehensive source of information on all facets of label-free biosensing and the future trends in this flourishing field. Highlights of the subjects covered include label-free biosensing with: · semiconductor field-effect devices such as nanomaterial-modified capacitive electrolyte-insulator-semiconductor structures, silicon nanowire transistors, III-nitride semiconductor devices and light-addressable potentiometric sensors · impedimetric biosensors using planar and 3D electrodes · nanocavity and solid-state nanopore devices · carbon nanotube and graphene/graphene oxide biosensors · electrochemical biosensors using molecularly imprinted polymers · biomimetic sensors based on acoustic signal transduction · enzyme logic systems and digital biosensors based on the biocomputing concept · heat-transfer as a novel transducer principle · ultrasensitive surface plasmon resonance biosensors · magnetic biosensors and magnetic imaging devices
Download or read book Semiconducting Silicon Nanowires for Biomedical Applications written by Jeffery L. Coffer and published by Woodhead Publishing. This book was released on 2021-09-14 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: In its second, extensively revised second edition, Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and biomedical applications of this key material. The book begins by reviewing the basics of growth, characterization, biocompatibility, and surface modification of semiconducting silicon nanowires. Attention then turns to use of these structures for tissue engineering and delivery applications, followed by detection and sensing. Reflecting the evolution of this multidisciplinary subject, several new key topics are highlighted, including our understanding of the cell-nanowire interface, latest advances in associated morphologies (including silicon nanoneedles and nanotubes for therapeutic delivery), and significantly, the status of silicon nanowire commercialization in biotechnology. Semiconducting Silicon Nanowires for Biomedical Applications is a comprehensive resource for biomaterials scientists who are focused on biosensors, drug delivery, and the next generation of nano-biotech platforms that require a detailed understanding of the cell-nanowire interface, along with researchers and developers in industry and academia who are concerned with nanoscale biomaterials, in particular electronically-responsive structures. - Reviews the growth, characterization, biocompatibility, and surface modification of semiconducting silicon nanowires - Describes silicon nanowires for tissue engineering and delivery applications, including cellular binding & internalization, tissue engineering scaffolds, mediated differentiation of stem cells, and silicon nanoneedles & nanotubes for delivery of small molecule / biologic-based therapeutics - Highlights the use of silicon nanowires for detection and sensing - Presents a detailed description of our current understanding of the cell-nanowire interface - Covers the current status of commercial development of silicon nanowire-based platforms
Download or read book Electrical Properties of Indium Arsenide Nanowires and Their Field Effect Transistors written by Mengqi Fu and published by Springer. This book was released on 2018-12-12 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
