Download or read book Development of Mosfet Models Suitable for Simulation of Analog CMOS Circuits After Hot carrier Stress written by Gürsel Düzenli and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The down-scaling of device dimensions in CMOS technology will improve performance and packing density for VLSI (Very Large Scale Integration) circuits, but it will negatively effect the quaIity of the circuits. Integrated circuits (ICs) are basically classified according to the electrical function they perform. Integrated circuits performing nominally the same function, however, do not necessarily perform it equally well. The concept of quality is used to express how well the required function is performed. An operational amplifier is of higher quality İf it has a higher gain, wider frequency bandwidth, etc. These characteristics can be regarded as conformance figures. The conformance is, however, only one side of the quality. On the other side is the issue of how Iong the device or circuit will exhibit the initial performance figures. The concept of reliabillty is used to express this time dimension of the quality . Measurement and presentation of the conformance figures are straightforward; any conformance parameter can be measured directly and its value expressed. The situation is, however, different from determination and presentation of the reliability. The reliabilİty depends, in principle, on application conditions, which means it is not possible to establish an exact and unique reliability figure for a given device or IC. In addition, the reliability, determination itself, regardless of the application conditions used, cannot be made by direct measurements. This is mainly because of practical constraints. Theoretically, it is possible to determine the mean time to failure directly if a corresponding number of device or ICs are exposed to working conditions and times to failure of each of them are recorded. This is, however, practically meaningless; such a test would last for tens of years, and by the time the data are collected nobody would be interested in them. That is why accelerated tests have to be applied to obtain the results in a reasonable time of 1 or 2 months. The failures in ICs can be classified in at least three different ways: according to failure modes, according to failure mechanisms, and according to failure causes. The failure mode is the observed result of a failure, such as an open circuit, short circuit, or parameter degradation. The failure mechanism is the phyical, chemical, or other process that results in a failure. Finally , the failure cause is a circumstance during design, production, testing, or operation that initates or contributes to a failure mechanism. The focus of this study is the modeling of parameter degradation reliability of p- MOS and n-MOS transistors due to the hot-carriers under analog operation. Hot- carrier failure cause can initiate the electron/holetrapping/generation and/or interface trap creation mechanism leading to changes of oxide charge and trap densities during device operation. A lot of efforts have been devoted to study the mechanisms due to the hot-carrier and modeling the device degradation due to these effects. However , these modelings are often performed on digital applications. Analog applications differ from digital ones by a number of points. Analog circuit reliability prediction has to take analog circuit design variables such as channel length, biasing conditions, and circuit topography into consideration. In order to achieve highest possible speed, smallest area and smallest power consumption usually L=Lmin are chosen for digital applications. However, for nearly all-analog applications this choice is inadequate. In order to improve matching and noise behavior, channel lengths usually need to be chosen several times Lmin. For those greater lengths also the small-signal parameters especially the drain conductance, are largely improved. However, because analog circuits usually use long-channel devices, the influence of hot-carrier effects on analog circuit performance has been believed to be minimal and, as a result, has been mostly overlooked. Therefore, the most important device parameters in these two application fields do not coincide. For example, power supply scaling for analog circuİts will not likely be as aggressive as for digital circuits, because submicron devices are necessary for high speed applications. However , the operation of analog circuits is sensitive to device parameter variations. Furthermore, device parameter variations depend on the specific application of a given analog circuit. The proposed models combines the advantages of the parameter fitting method and so-called AId model. The essence of the model is the translation of the physical W,mechanisms leading to degradation into the MOSFET model equations correct place via an empirical description. Because of the correct place of the empirical description in the MOSFET model equations the parameter extraction will be as simple as that of the so-called LlIo model. The empirical description was found from different degradations and fresh devices, so the accuracy is as high as that of the parameter fitting method. Furthermore, the general structure of the empirical description is independent of the process technology. Therefore, it does not impose a much higher requirement on device engineer . Another important feature of the proposed models is the prediction of the device lifetime at real life. This is an important feature because most of the developed degradation models are not able to predict the device lifetime. Therefore, several extrapolation laws to calculate the Iifetime have been developed. But, most of the developed lifetime prediction models are developed for digital applications. However, when the same lifetime prediction models are applied to analog applications, gross lifetime prediction error results. This is because the stress conditions are totally different in analog applications compared to digital applications. The proposed model includes a hot-carrier degradation model and a lifetime prediction model as a single model suitable for analog applications. The accuracy of the presented models has been verified with experimental data.

Download or read book Modeling and Simulation OfpMOSFET Hot carrier Degradation in Very Large CMOS Circuits written by Weishi Sun and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The goals of the research work presented in this thesis are to model submicron pMOS transistor hot-carrier degradation and to develop a fast reliability simulation tool for hot-carrier reliability analysis of CMOS VLSI circuits. This simulator should be able to handle very large submicrometer circuits accurately and efficiently. As device sizes shrink into the submicron region, pMOS transistor hot-carrier degradation becomes increasingly more important. There has not, however, been a widely accepted model for pMOS transistor hot-carrier degradation unlike that for nMOS transistors. Existing reliability simulations tools are primarily based on transistor level simulation and, therefore, can not handle large circuits efficiently. Using the fast-timing-based reliability simulator, ILLIADS-R, and the empirical model developed based on our experimental results, hot-carrier reliability can be well predicted. ILLIADS-R also serves as an integral part of the hierarchical design-for-reliability system. A new hot-carrier degradation model is developed for submicron pMOS transistors. Using this model, the pMOS transistor hot-carrier degradation can be predicted based on the total injected charge into the gate oxide region and the initial gate current under normal operating condition. This model is integrated into the fast-timing-based reliability simulation tool, ILLIADS-R. The simulation results demonstrate that ILLIADS-R outperforms the existing reliability simulator BERT in terms of simulation speed with a comparable accuracy. Also studied are the pMOS transistor subthreshold leakage characteristics as a function of hot-carrier stress conditions. It is shown that subthreshold leakage current is a future limit to the pMOS device lifetime.

Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain D. Arora and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.

Download or read book MOSFET Modeling for Circuit Analysis and Design written by Carlos Galup-Montoro and published by World Scientific. This book was released on 2007 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

Download or read book Simulation Model for Hot carrier induced Degradation of CMOS Analog Circuits written by Wilson Yap Chan and published by . This book was released on 1994 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Mosfet Modeling For Vlsi Simulation Theory And Practice written by Narain Arora and published by World Scientific. This book was released on 2007-02-14 with total page 633 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

Download or read book BSIM4 and MOSFET Modeling for IC Simulation written by Weidong Liu and published by World Scientific. This book was released on 2011 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

Download or read book A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design written by Douglas Weiser and published by . This book was released on 2019-05-31 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: A process-based model (UFET) for deep-submicron bulk-silicon MOSFETs is developed and verified with numerical device simulations and measured data. The charge-based model is physical with accountings for the predominant short-channel (e.g., charge sharing, drain-induced threshold reduction and velocity saturation) and extremely scaled-technology (i.e., energy quantization and polysilicon-gate depletion) effects in MOSFETs. The key to UFET is the characterization of the bias-dependent two-dimensional regions near the source/ drain junctions which can extend over a significant fraction of the metallurgical channel length. When these two-dimensional regions near the junctions are modeled, the physical charge-sheet model can be applied to the remaining "quasi-two- dimensional" channel length to define the channel current and terminal charges, without resorting to empiricism to account for the short-channel effects. Special attention paid to continuity in the derivation of the model formalism yields a physical C-infinity model applicable to analog and digital CMOS circuit design. The small number of physical, process-based parameters simplifies the model calibration, and renders the model suitable for predictive device/circuit simulation, statistical simulations and circuit sensitivity analyses based on known or presumed process variations. Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design" by Douglas Aaron Weiser, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.

Download or read book Device Modeling for Analog and RF CMOS Circuit Design written by Trond Ytterdal and published by John Wiley & Sons. This book was released on 2003-05-07 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 & , and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.

Download or read book Modeling and Simulation of Hot carrier Effects in MOS Devices and Circuits written by Peter Maurice Lee and published by . This book was released on 1990 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book CMOS written by R. Jacob Baker and published by John Wiley & Sons. This book was released on 2008 with total page 1074 pages. Available in PDF, EPUB and Kindle. Book excerpt: This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.

Download or read book MOSFET Hot carrier Degradation written by Meindert Martin Lunenborg and published by . This book was released on 1996 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling and Simulation of PMOSFET Hot carrier Degradation in Very Large CMOS Circuits written by Weishi Sun and published by . This book was released on 1995 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book CMOS Analog Design Using All Region MOSFET Modeling written by Márcio Cherem Schneider and published by Cambridge University Press. This book was released on 2010-01-28 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The essentials of analog circuit design with a unique all-region MOSFET modeling approach.

Download or read book Nano scale CMOS Analog Circuits written by Soumya Pandit and published by CRC Press. This book was released on 2018-09-03 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2002 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book IEEE International Reliability Physics Symposium Proceedings written by International Reliability Physics Symposium and published by . This book was released on 2004 with total page 766 pages. Available in PDF, EPUB and Kindle. Book excerpt: