Download or read book Development of 4H SiC PiN Diodes for High Voltage Applications written by Craig A. Fisher and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Dynamics of Forward Voltage Drift in 4H SiC PiN Diodes written by and published by . This book was released on 2008 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: 4H-silicon carbide (SiC) is desired for electronic devices designed to be operated at high temperatures or at high electric powers. However, difficulties in the growth of high-purity, low defect density substrates and epitaxial layers have limited the use of SiC in commercial and military applications. One such impediment is the nucleation and expansion of Shockley stacking faults (SSFs) during forward-bias device operation (stressing), which induces an undesirable increase in the forward voltage drop (Vf). While efforts have been made to reduce the number of SSFs within a given device, these defects continue to provide a significant technological hurdle to the commercialization of 4H-SiC electronic devices, most especially for larger-area power devices that require close to defect-free active regions.
Download or read book Nanoelectronics written by Robert Puers and published by John Wiley & Sons. This book was released on 2017-06-19 with total page 694 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering first-hand insights by top scientists and industry experts at the forefront of R&D into nanoelectronics, this book neatly links the underlying technological principles with present and future applications. A brief introduction is followed by an overview of present and emerging logic devices, memories and power technologies. Specific chapters are dedicated to the enabling factors, such as new materials, characterization techniques, smart manufacturing and advanced circuit design. The second part of the book provides detailed coverage of the current state and showcases real future applications in a wide range of fields: safety, transport, medicine, environment, manufacturing, and social life, including an analysis of emerging trends in the internet of things and cyber-physical systems. A survey of main economic factors and trends concludes the book. Highlighting the importance of nanoelectronics in the core fields of communication and information technology, this is essential reading for materials scientists, electronics and electrical engineers, as well as those working in the semiconductor and sensor industries.
Download or read book Handbook of Silicon Carbide Materials and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 2023-07-10 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Download or read book Development of 17 KV 4H SiC PiN Diode Project Supported by the National High Technology Research and Development Program of China No 2014AA041401 written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices OCo power switching Schottky diodes and high temperature MESFETs OCo are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Contents: SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PiN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo). Readership: Technologists, scientists, engineers and graduate students working on silicon carbide or other wide band gap materials and devices."
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Proceedings of the International Symposium on Power Semiconductor Devices and ICs written by and published by . This book was released on 2005 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book CVD Diamond for Electronic Devices and Sensors written by Ricardo S. Sussmann and published by John Wiley & Sons. This book was released on 2009-01-09 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: Synthetic diamond is diamond produced by using chemical or physical processes. Like naturally occurring diamond it is composed of a three-dimensional carbon crystal. Due to its extreme physical properties, synthetic diamond is used in many industrial applications, such as drill bits and scratch-proof coatings, and has the potential to be used in many new application areas A brand new title from the respected Wiley Materials for Electronic and Optoelectronic Applications series, this title is the most up-to-date resource for diamond specialists. Beginning with an introduction to the properties of diamond, defects, impurities and the growth of CVD diamond with its imminent commercial impact, the remainder of the book comprises six sections: introduction, radiation sensors, active electronic devices, biosensors, MEMs and electrochemistry. Subsequent chapters cover the diverse areas in which diamond applications are having an impact including electronics, sensors and actuators and medicine.
Download or read book 4H SiC Lateral Single Zone RESURF Diodes written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide is an attractive material for development of high voltage and high frequency devices. The critical electric field of Silicon Carbide is more than 10 times higher than that of Silicon and hence a larger breakdown voltage can be supported in a smaller drift length as compared to Si devices. From Si studies it is known that the breakdown voltage is low for very high and very low doses and high for intermediate doses and that it increases linearly with the RESURF length till it reaches a maximum value limited by breakdown at the epi-substrate junction. This work deals with simulations on 4H SiC RESURF diode. From our simulations, the maximum breakdown voltage that we obtained was 2240V at a dose of 1x10 to the 13th power per cm square which is around 94% of the ideal parallel plane breakdown voltage. Electric field in the oxide at such high voltages can become quite high and can lead to premature breakdown of the device. To solve this problem, we used nitride as the dielectric. The optimum dose in this case, was found to be 7 x 10 the 12th power per cm square which gave the maximum breakdown voltage of 2100 V. The electric field in nitride does not exceed 3.5 x 10 to the sixth power V/cm which is much less than the nitride rupture field of 1 x 10 to the 7th power V/cm. For both oxide and nitride cases, we obtained a good range (7x10 to the 12th power/ sq cm - 2 x 10 to the 13th power/sq cm) of dose where the breakdown voltage is quite high (2000V and above), which is not seen in Si RESURF devices.
Download or read book Modern Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific. This book was released on 2023-09-18 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.
Download or read book Advances in Silicon Carbide Processing and Applications written by Stephen E. Saddow and published by Artech House. This book was released on 2004 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Download or read book Study of Forward Voltage Degradation of Diffused 4H SiC PiN Diode written by Yuefei Ma and published by . This book was released on 2004 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Novel Contact Formation for 4H SiC Power Devices written by and published by . This book was released on 2007 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific Publishing Company. This book was released on 2016-12-12 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Download or read book Mechatronics Engineering and Electrical Engineering written by Ai Sheng and published by CRC Press. This book was released on 2015-04-28 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 2014 International Conference on Mechatronics Engineering and Electrical Engineering (CMEEE2014) was held October 18-19, 2014 in Sanya, Hainan, China. CMEEE2014 provided a valuable opportunity for researchers, scholars and scientists to exchange their new ideas and application experiences face to face together, to establish business or research
