Download or read book Development of 17 KV 4H SiC PiN Diode Project Supported by the National High Technology Research and Development Program of China No 2014AA041401 written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Temperature variable High frequency Dynamic Modeling of PIN Diode Project Supported by the National High Technology and Development Program of China No 2011AA11A265 written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: The PIN diode model for high frequency dynamic transient characteristic simulation is important in conducted EMI analysis. The model should take junction temperature into consideration since equipment usually works at a wide range of temperature. In this paper, a temperature-variable high frequency dynamic model for the PIN diode is built, which is based on the Laplace-transform analytical model at constant temperature. The relationship between model parameters and temperature is expressed as temperature functions by analyzing the physical principle of these parameters. A fast recovery power diode MUR1560 is chosen as the test sample and its dynamic performance is tested under inductive load by a temperature chamber experiment, which is used for model parameter extraction and model verification. Results show that the model proposed in this paper is accurate for reverse recovery simulation with relatively small errors at the temperature range from 25 to 120 °C.

Download or read book Characteristics and Analysis of 4H SiC PiN Diodes with a Carbon implanted Drift Layer Project Supported by the Opening Project of Key Laboratory of Microelectronics Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Development of 4H SiC PiN Diodes for High Voltage Applications written by Craig A. Fisher and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Efficiency Droop Suppression in GaN based Light emitting Diodes by Chirped Multiple Quantum Well Structure at High Current Injection Project Suppored by the National High Technology Research and Development Program of China Grant No 2014AA032608 the Key Laboratory for Mechanical Behavior of Material of Xi an Jiaotong University China Grant No 20121201 and the Fundamental Research Funds for the Central Universities China written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Gallium nitride (GaN) based light-emitting diodes (LEDs) with chirped multiple quantum well (MQW) structures have been investigated experimentally and numerically in this paper. Compared to conventional LEDs with uniform quantum wells (QWs), LEDs with chirped MQW structures have better internal quantum efficiency (IQE) and carrier injection efficiency. The droop ratios of LEDs with chirped MQW structures show a remarkable improvement at 600 mA/mm 2, reduced down from 28.6% (conventional uniform LEDs) to 23.7% (chirped MQWs-a) and 18.6% (chirped MQWs-b), respectively. Meanwhile, the peak IQE increases from 76.9% (uniform LEDs) to 83.7% (chirped MQWs-a) and 88.6% (chirped MQWs-b). The reservoir effect of chirped MQW structures is the significant reason as it could increase hole injection efficiency and radiative recombination. The leakage current and Auger recombination of chirped MQW structures can also be suppressed. Furthermore, the chirped MQWs-b structure with lower potential barriers can enhance the reservoir effect and obtain further improvement of the carrier injection efficiency and radiative recombination, as well as further suppressing efficiency droop.