Download or read book Development and Characterization of Ohmic and Schottky Contacts for Gallium Nitride and Aluminum Gallium Nitride Devices written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Thermally Stable Ohmic and Schottky Contacts to GaN written by Lars Fredrik Voss and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: This dissertation is focused on the development of Ohmic and Schottky contacts to both nand p-type Gallium Nitride for use in microelectronic and optical devices. The goal is to develop low resistance contacts with greater thermal budgets and superior thermal aging characteristics to those commonly in use today as well as to understand the mechanisms by which these contacts may fail. In addition, p-type Ohmic contacts have been used to fabricate light emitting diodes (LEDs) which display far superior aging properties than those made with conventional Ni/Au contacts. Ohmic contacts to p-GaN were fabricated using a variety of refractory materials. The materials examined were of three basic types: boride, nitride, and the refractory metal Ir. The boride family includes W2B, W2B5, CrB2, ZrB2, and TiB2. The nitrides examined were TaN, TiN, and ZrN. Contacts based on these materials were fabricated using either a GaN//Ni/Au/X/Ti/Au, GaN//X/Ti/Au, or GaN//Ni/X/Au scheme, where X is the refractory material. Contact resistances as low as ~1 x 10-4 ohm/cm2 were consistently achieved after annealing at temperatures from 500-1000°C for 60 s in N2 using these materials for p-GaN with a carrier concentration of ~1 x 1017 cm-3.

Download or read book Aluminum Gallium Nitride written by David DiSanto and published by . This book was released on 2005 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last decade, All-, GaXN/GaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their intrinsic electrical properties make them attractive for high power microwave device applications. Despite much progress, current slump continues to be a problem, limiting output power, reducing reliability, and complicating device modelling. In this work, a complete AĨ-, G, ̃N/GÑ HEMT fabrication procedure was developed, and electrical characteristics related to current slump, microwave modelling, and delay time analysis were explored. Low resistance ohmic contacts were achieved, enabling high channel current densities. Schottky contacts were developed with a new ion implant isolation architecture, enabling gate leakage currents 2 to 4 orders of magnitude lower than typical results from the literature. Through pulsed current-voltage measurements, the importance of bias stresses in the gate-source region was demonstrated for the first time. In contrast to the conventional "virtual gate" model, gate-source stresses were shown to be more important than gatedrain stresses when biased near threshold. Slow slump transients were studied by passivating transistor surfaces with ultrathin layers. These results excluded dielectric strain and electron injection reduction as viable passivation mechanisms. A novel model was proposed associating slow slump behaviour with trapping of many electrons at screw dislocation sites. The effect of slump on RF properties was examined through microwave measurements by extracting the parasitic source and drain resistances without special biasing. Besides significantly improving the accuracy of small-signal modelling, we were able to show the bias dependence of parasitic resistances which confirmed the effect of source-side bias stressing. The question of channel electron velocities in nitride transistors remains controversial. We determined an effective electron velocity of - 1.9 x 1 o7 cmls through two methods. We first extracted effective velocities through delay time analysis, and then through the small-signal model elements. To our knowledge, this was the first time an equivalent model extraction led to self-consistent electron velocity values for nitride transistors. Finally, our equivalent circuit model showed the correct interrelation between frequency response and access resistances. The cohesive picture of current slump, equivalent circuit model extraction, and delay time analysis gives a high degree of confidence in these results.

Download or read book Ohmic Contacts to Semiconductors written by Electrochemical Society and published by . This book was released on 1969 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2003 with total page 860 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride Electronics written by Rüdiger Quay and published by Springer Science & Business Media. This book was released on 2008-04-05 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

Download or read book Wide Bandgap Semiconductor Electronics And Devices written by Uttam Singisetti and published by World Scientific. This book was released on 2019-12-10 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: 'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride Processing for Electronics Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-07-06 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

Download or read book The Development and Characterization of Metal Contacts to P GaN written by David Jonathan King and published by . This book was released on 1998 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Investigation of Ohmic Contacts for Gallium Nitride Based Power Electronic Devices Using Molecular Beam Epitaxy written by and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Gold germanium and Indium Ohmic Contacts to Gallium Arsenide written by S. Parameswaran and published by . This book was released on 1987 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Comprehensive Dissertation Index written by and published by . This book was released on 1984 with total page 890 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ohmic Contacts to N type Aluminum Gallium Arsenide Al subscript X G subscript X As O lesser Than Or Equal To x lesser Than Or Equal To 0 3 Utilizing Limited Solid phase Reactions written by Eric David Marshall and published by . This book was released on 1989 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Development of High Temperature Stable Ohmic and Schottky Contacts on N GaN written by Rohit Khanna and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The contacts formed gave specific contact resistance of the order of 10−5 to 10−6 Ohm-cm2. A minimum contact resistance of 1.5x10−6 Ohm.cm2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900 degreeC, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200 degreeC to 350 degreeC, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices.