Download or read book Design Simulation Fabrication and Characterization of the Insulated Gate Bipolar Transistor with Base Resistance Controlled Thyristor IGBT BRT written by Lin Wang and published by . This book was released on 1999 with total page 45 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling Design Fabrication and Characterization of the Insulated Gate Bipolar Transistor IGBT with Integrated Current Sensors written by Cheng Shen and published by . This book was released on 1994 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Insulated Gate Bipolar Transistor IGBT Theory and Design written by Vinod Kumar Khanna and published by John Wiley & Sons. This book was released on 2004-04-05 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Download or read book The IGBT Device written by B. Jayant Baliga and published by William Andrew. This book was released on 2015-03-06 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.
Download or read book Design Simulation and Modeling of Insulated Gate Bipolar Transistor written by Kaustubh Gupta and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions of IGBT circuits based on device simulation and combinatorial optimization. Our method leads to the optimal IGBT layout consisting of hexagons, which is 6% more efficient in terms of performance (current per unit area) over that of squares, and up to 80% more efficient than rectangles. We also explored several techniques to reduce the time used for device simulation. In particular, we developed an accurate Verilog-A description based on the Hefner model. For transient simulation, the time used by SPICE on the Verilog-A model is only 1/10000 of that used by device simulation on the device structure. The SPICE results, though contain some inaccuracies in the details, match device simulation in the general trend. Due to the effectiveness and efficiency of our methods, we propose their application in designing better power electronic circuits and shorter turn-around time. The electronic version of this dissertation is accessible from http://hdl.handle.net/1969.1/151277
Download or read book Design Fabrication Characterization of LkV Integrated DMOS Insulated Gate Bipolar Transistor merged Pin Schottky Rectifier Devices written by Ramanan Natarajan and published by . This book was released on 2003 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling and Characterization of the Insulated Gate Bipolar Transistor in the Near threshold Region written by Farah P. Vandrevala and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device widely used in high-speed switching applications. Due to aging and internal heating, the device is prone to a failure mechanism known as latch-up in which, changes in the threshold voltage and the on-state voltage of the device may ultimately lead to loss of switching control. Since IGBTs are typically operated at high voltages and currents, the datasheets do not provide information on the static characteristics of the device for voltages close to the threshold, which is a useful region for understanding the underlying device physics. In this thesis a simplified IGBT model is presented that attempts to provide a magnified view of the static characteristics close to the threshold voltage. The model is developed based on the device structure and is optimized to fit the measured characteristics in the near-threshold voltage range.
Download or read book Design Fabrication and Characterization of a Silicon Bipolar Transistor written by Jiun-yih Yu and published by . This book was released on 1988 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design and Realization of Bipolar Transistors written by Peter Ashburn and published by . This book was released on 1988-08-18 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Download or read book Insulated Gate Bipolar Transistor IGBT Simulation Using IG Spice written by Chang Su Mitter and published by . This book was released on 1991 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling and Characterization of Advanced Bipolar Transistors and Interconnects for Circuit Simulation written by Jiann-Shiun Yuan and published by . This book was released on 1988 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation discusses the modeling of two-dimensional effects in advanced bipolar transistors (BJT's) and interconnects. The goal is to develop accurate and compact models for SPICE circuit simulation of advanced bipolar technologies. After reviewing base pushout mechanism in the bipolar transistor, the collector current spreading effects in quasi-saturation have been presented. A two-dimensional circuit model including collector spreading effects in the epitaxial collector is developed based on the physical insights gained from PISCES device simulations. Illustrative measurements and simulations demonstrate the bipolar circuit modeling accuracy. Then a physics-based current-dependent base resistance model for circuit simulation is developed. Physical mechanisms such as base width modulation, base conductivity modulation, emitter crowding, and base pushout are accounted for in the comprehensive current -dependent base resistance "model. Comparisons of the model predictions with measurements and device simulations show excellent agreement. Two-dimensional circuit modeling is developed for the nonuniform current and charge distribution effects at the emitter-base sidewall and under the emitter during switch-on transients. The charge and current partitioning implemented in the bipolar transistor model treats the transient emitter crowding and current -dependent base resistance in a unified manner. Good agreement is obtained between model predictions and experimental results and transient device simulations. In parallel to the work on fast BJT digital transients, the bipolar transistor high-frequency small-signal s-parameter prediction using a physical device simulator is developed. This is a novel result which includes the effects of the Intrinsic bipolar response as well as the parasitics of interconnects, discontinuities, and bonding pads. This modeling technique can be used for sophisticated three-port or four-port network characterization and for predicting the high-frequency small-signal parameters other types of transistors. The dissertation examines the improvement of IC interconnect models. Interconnect models including losses and dispersion are developed for advanced BJT IC doping profiles. In addition, signal crosstalk between adjacent interconnects is discussed. An ECL ring oscillator with interconnection line in mixed-mode circuit simulation demonstrates the utility and necessity of accurate interconnect modeling. In summary, the dissertation provides a comprehensive two-dimensional circuit and interconnect modeling for advanced bipolar IC techniques useful in computer-aided device and circuit design.
Download or read book Design Simulation Fabrication and Characterization of High voltage N channel DMOS Insultated Gate Bipolar Junction Transistor with Diverter IGBID written by Suk Hoon Ku and published by . This book was released on 1999 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1994 with total page 1084 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Fabrication and Characterization of Bipolar Transistors with Polysilicon Emitters written by Julie Kerstin Bratvold and published by . This book was released on 1990 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The IGBT Device Physics Design and Applications of the Insulated Gate Bipolar Transistor written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation Fabrication and Electrical Characterization of Silicon Bipolar Transistor and Design of SiGe Heterojunction Bipola written by Alhan Farhanah Abdul Rahim and published by . This book was released on 2002 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Soft Switching Performance Analysis of the Clustered Insulated Gate Bipolar Transistor CIGBT written by Jonathan Christopher Nicholls and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of Insulated Gate Bipolar Transistors (IGBT) have enabled better switching performance than the Metal Oxide Semiconductor Field effect Transistor (MOSFET) in medium to high power applications due to their lower on-state power loss and higher current densities. The power ratings of IGBTs are slowly increasing and are envisaged to replace thyristors in medium power applications such as High Voltage Direct Current (HVDC) inverter systems and traction drive controls. Devices such as the MOS Controlled Thyristor (MCT) and Emitter Switched Thyristor (EST) were developed in an effort to further simplify drive requirements of thyristors by incorporating a voltage controlled MOS gate into the thyristor structure. However, the MCT is unable to achieve controlled current saturation which is a desirable characteristic of power switching devices while the EST has only limited control. The IGBT can achieve current saturation, however, due to the transistor based structure it exhibits a larger on-state voltage in high power applications compared with thyristor based devices. MOS Gated Thyristor (MGT) devices are a promising alternative to transistor based devices as they exhibit a lower forward voltage drop and improved current densities. This current research focuses on the Clustered Insulated Gate Bipolar Transistor (CIGBT) whilst being operated under soft-switching regimes. The CIGBT is a MOS gated thyristor device that exhibits a unique self-clamping feature that protects cathode cells from high anode voltages under all operating conditions. The self-clamping feature also enables current saturation at high gate biases and provides low switching losses. Its low on-state voltage and high voltage blocking capabilities make the CIGBT suitable as a contender to the IGBT in medium to high power switching applications. For the first time, the CIGBT has been operated under soft-switching regimes and transient over-voltages at turn-on have been witnessed which have been found to be associated with a number of factors. The internal dynamics of the CIGBT have been analysed using 2D numerical simulations and it has been shown that a major influence on the peak voltage is the P well spacing within the CIGBT structure. For example, Small adjacent P well spacings within the device results in an inability for the CIGBT to switch iv on correctly. Further to this, implant concentrations of the n well region during device fabrication can also affect the turn-on transients. Despite this, the CIGBT has been experimental analysed under soft-switching conditions and found to outperform the IGBT by 12% and 27% for on-state voltage drop and total energy losses respectively. Turn off current bumps have been seen whilst switching the device in zero voltage and zero current switching mode of operation and the internal dynamics have been analysed to show the influence upon the current at turn off. Preliminary results on the Trench CIGBT (TCIGBT) under soft switching conditions has also been analysed for the first time and was found to have a reduced peak over-voltage and better switching performance than the planer CIGBT. Through optimisation of the CIGBT structure and fabrication process, it is seen that the device will become a suitable replacement to IGBT in medium power application.
