Download or read book Design Simulation and Modeling of Insulated Gate Bipolar Transistor written by Kaustubh Gupta and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions of IGBT circuits based on device simulation and combinatorial optimization. Our method leads to the optimal IGBT layout consisting of hexagons, which is 6% more efficient in terms of performance (current per unit area) over that of squares, and up to 80% more efficient than rectangles. We also explored several techniques to reduce the time used for device simulation. In particular, we developed an accurate Verilog-A description based on the Hefner model. For transient simulation, the time used by SPICE on the Verilog-A model is only 1/10000 of that used by device simulation on the device structure. The SPICE results, though contain some inaccuracies in the details, match device simulation in the general trend. Due to the effectiveness and efficiency of our methods, we propose their application in designing better power electronic circuits and shorter turn-around time. The electronic version of this dissertation is accessible from http://hdl.handle.net/1969.1/151277

Download or read book Insulated Gate Bipolar Transistor IGBT Theory and Design written by Vinod Kumar Khanna and published by John Wiley & Sons. This book was released on 2004-04-05 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Download or read book Modeling Design Fabrication and Characterization of the Insulated Gate Bipolar Transistor IGBT with Integrated Current Sensors written by Cheng Shen and published by . This book was released on 1994 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characteristics Simulation Device Modeling and Reliability Test of Insulated Gate Bipolar Transistor written by 許哲誌 and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design Simulation Fabrication and Characterization of the Insulated Gate Bipolar Transistor with Base Resistance Controlled Thyristor IGBT BRT written by Lin Wang and published by . This book was released on 1999 with total page 45 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The IGBT Device written by B. Jayant Baliga and published by Elsevier. This book was released on 2022-11-25 with total page 802 pages. Available in PDF, EPUB and Kindle. Book excerpt: The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor, Second Edition provides the essential information needed by applications engineers to design new products using the device in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The IGBT device has proven to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasoline powered motor vehicles and energy-saving compact fluorescent light bulbs. The book presents recent applications in plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage, but it is also used in all renewable energy generation systems, including solar and wind power. This book is the first available on the applications of the IGBT. It will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical and design engineers, as well as an important publication for semiconductor specialists. Presents essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors Teaches the methodology for the design of IGBT chips, including edge terminations, cell topologies, gate layouts, and integrated current sensors Covers applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion Written by the inventor of the device, this is the first book to highlight the key role of the IGBT in enabling electric vehicles and renewable energy systems with global impacts on climate change

Download or read book Compact Modeling of SiC Insulated Gate Bipolar Transistors written by Sonia Marie Perez and published by . This book was released on 2016 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipolar Transistor (IGBT) compact model in both MAST and Verilog-A formats. Initially, the existing MAST model mobility equations were updated using recently referenced silicon carbide (SiC) data. The updated MAST model was then verified for each device tested. Specifically, the updated MAST model was verified for the following IGBT devices and operation temperatures: n-channel silicon at 25 ̊C and at 125 ̊C; n-channel SiC at 25 ̊C and at 175 ̊C; and p-channel SiC at 150 ̊C and at 250 ̊C. Verification was performed through capacitance, DC output characteristics, and turn-off transient simulations. The validated MAST model was then translated into the Verilog-A language, and the Verilog-A model results were validated against the updated MAST model.

Download or read book Simulation of Heating of an Oil Cooled Insulated Gate Bipolar Transistors Converter Model written by and published by . This book was released on 2004 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: I used SolidWorks a three-dimensional modeling software, and FloWorks, a fluid dynamics analysis tool, to simulate oil flow and heat transfer in a heat sink structure attached to three insulated gate bipolar transistors. My objective was to estimate the cooling properties of the oil-cooled heat sink during a range of operating conditions. I calculated steady state temperatures of the heat sink and plotted heat contours on its surface. I also calculated the temperature, pressure, and velocity of the oil as it flowed through the heat sink.

Download or read book Transient Electro Thermal Modeling of Bipolar Power Semiconductor Devices written by Tanya Kirilova Gachovska and published by Morgan & Claypool Publishers. This book was released on 2013-11-01 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.

Download or read book Characterization and modeling of the power Insulated Gate Bipolar Transistor written by Allen Ray Hefner and published by . This book was released on 1996 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling and Characterization of the Insulated Gate Bipolar Transistor in the Near threshold Region written by Farah P. Vandrevala and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device widely used in high-speed switching applications. Due to aging and internal heating, the device is prone to a failure mechanism known as latch-up in which, changes in the threshold voltage and the on-state voltage of the device may ultimately lead to loss of switching control. Since IGBTs are typically operated at high voltages and currents, the datasheets do not provide information on the static characteristics of the device for voltages close to the threshold, which is a useful region for understanding the underlying device physics. In this thesis a simplified IGBT model is presented that attempts to provide a magnified view of the static characteristics close to the threshold voltage. The model is developed based on the device structure and is optimized to fit the measured characteristics in the near-threshold voltage range.

Download or read book Compact Hierarchical Bipolar Transistor Modeling with Hicum written by Michael Schr”ter and published by World Scientific. This book was released on 2010 with total page 753 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.

Download or read book Insulated Gate Bipolar Transistor IGBT Simulation Using IG Spice written by Chang Su Mitter and published by . This book was released on 1991 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Benefit Analysis of IGBI Power Device Simulation written by Michael P. Gallahera and published by . This book was released on 2000-01-01 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: This study presents the results from a microeconomic impact assessment of the development of mathematical models for the design of insulated-gate bipolar transistor (IGBT) semiconductor power devices. Sections include: project objectives; motivation for NIST's involvement; NIST's contributions to mathematical modeling of IGBT power devices; overview of analysis approach; the IGBT supply chain; technical impacts of simulation modeling of IGBT devices; methodology for estimating economic impacts; analysis results; market barriers and the role of NIST. References. Charts and tables.

Download or read book Modeling of SiC P channel Insulated Gate Bipolar Transistors IGBTs written by Mahmood Shihadeh Saadeh and published by . This book was released on 2011 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods

Download or read book The IGBT Device written by B. Jayant Baliga and published by William Andrew. This book was released on 2015-03-06 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.