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Book Design of Wideband Millimeter Wave Beamformers and Transceivers in Advanced CMOS SOI Technology

Download or read book Design of Wideband Millimeter Wave Beamformers and Transceivers in Advanced CMOS SOI Technology written by Li Gao and published by . This book was released on 2020 with total page 179 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the development of wireless communications, high data rate is becoming essential since it not only augments the current wireless systems but also enables many emerging applications. In order to achieve multi-gigabit-per-second data rates, the fifth generation communication system (5G) is moving forward to the millimeter-wave band, such as 24-29 GHz and 37-42 GHz. Since the frequency is more than 10 times than the current communication protocols, the wavelength is 10 times smaller, which makes the transmission line effects more notable and increases the design complexity. Moreover, the path loss is much larger and therefore a higher output power or antenna EIRP (effective isotropic radiated power) is required to overcome this loss. Previous millimeter-wave 5G research focused on narrow band, such as 28 GHz and 39 GHz. But if a single system can be wideband and include all of these bands, the simultaneous data rate can be increased and the system cost can be reduced. The research projects in this dissertation, in consequence, focus on different wideband RF ICs, and include power amplifiers (PA), low noise amplifiers (LNA), wideband phased-array receivers with high single-sideband rejection, wideband IQ receivers and wideband front-end circuits including phase-shifters and variable gain amplifiers. All of these circuits were done in advanced CMOS SOI technologies. The thesis concludes with a list of future work to be done in this area.

Book Design and Modeling of Millimeter wave CMOS Circuits for Wireless Transceivers

Download or read book Design and Modeling of Millimeter wave CMOS Circuits for Wireless Transceivers written by Ivan Chee-Hong Lai and published by Springer Science & Business Media. This book was released on 2008-03-25 with total page 185 pages. Available in PDF, EPUB and Kindle. Book excerpt: Design and Modeling of Millimeter-wave CMOS Circuits for Wireless Transceivers describes in detail some of the interesting developments in CMOS millimetre-wave circuit design. This includes the re-emergence of the slow-wave technique used on passive devices, the license-free 60GHz band circuit blocks and a 76GHz voltage-controlled oscillator suitable for vehicular radar applications. All circuit solutions described are suitable for digital CMOS technology. Digital CMOS technology developments driven by Moore’s law make it an inevitable solution for low cost and high volume products in the marketplace. Explosion of the consumer wireless applications further makes this subject a hot topic of the day. The book begins with a brief history of millimetre-wave research and how the silicon transistor is born. Originally meant for different purposes, the two technologies converged and found its way into advanced chip designs. The second part of the book describes the most important passive devices used in millimetre-wave CMOS circuits. Part three uses these passive devices and builds circuit blocks for the wireless transceiver. The book completes with a comprehensive list of references for further readings. Design and Modeling of Millimeter-wave CMOS Circuits for Wireless Transceivers is useful to show the analogue IC designer the issues involved in making the leap to millimetre-wave circuit designs. The graduate student and researcher can also use it as a starting point to understand the subject or proceed to innovative from the works described herein.

Book High Performance CMOS SOI Gbps Millimeter Wave Transceivers  Phased Arrays and Switching Networks

Download or read book High Performance CMOS SOI Gbps Millimeter Wave Transceivers Phased Arrays and Switching Networks written by Yang Yang and published by . This book was released on 2018 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the CMOS process technology progress, transistor can achieve up to 260 GHz ft and fmax referenced to the top metal, it makes possible to develop lower cost circuits and blocks for THz high speed implementations such as active imagine system, short distance chip to chip communication systems and large scale high speed ultra low power switch networks. The dissertation shows an 8x1 phased array transmitter working at 370-410 GHz with peak EIRP of 8.5 dBm, a QPSK modulated 20 Gbit/s transceiver front end (including modulator, voltage control oscillator, power splitter, doubler, mixer and wide-band baseband amplifier.) at 155 GHz and two cross connected high peed ultra low power switch matrices (an 8x8 matrix up to 25 Gbit/s matrix and a 16x16 matrix built using four 8x8 matrix). All circuits and blocks are built using the Global Foundries 45 nm CMOS SOI (silicon on isotropic) process.

Book Transceiver Technologies for Millimeter Wave Beam Steering Applications  Band 71

Download or read book Transceiver Technologies for Millimeter Wave Beam Steering Applications Band 71 written by Yi-Fan Tsao and published by Cuvillier Verlag. This book was released on 2022-11-08 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past years, wireless communication systems have been rapidly advancing to meet the high data-rate requirements of various emerging applications. However, the existing transceivers have typically been demonstrated using CMOS-compatible technologies that deliver a relatively low equivalent isotropic radiated power in a small unit cell. Moreover, the particular device characteristics are limiting the linear region for operation. Therefore, the main focus of this dissertation is to present and discuss new design methods for transceivers to solve these issues. To reduce the complexity of the transceiver module for further phased-array scaling, a low-noise power amplifier design approach is designed using a 0.15-μm GaN-on-SiC high-electron mobility transistor technology (HEMT). Utilizing a traded off interstage matching topology between loss and bandwidth, the conversion loss induced by the matching network could be effectively reduced. A stacked-FET configuration was adopted to enhance the power handling of the RF switch. Further improvement on the isolation bandwidth was investigated using theoretical analysis on the intrinsic effect of the passive HEMTs. With the successful implementation of the RF front-end circuits, transceiver modules were integrated on Rogers RO3010 substrate. The planar dual exponentially tapered slot antenna phased-array system showed a compact size with simple biasing network compared to the conventional transceiver approach. The presented T/R module was characterized with an over-the-air test at a distance of 1 m, overcoming the free space path loss of 64 dB. It also shows a high flexibility for further integration with a larger number of array systems, which is very promising for future 5G communication systems.

Book Digitally Assisted  Fully Integrated  Wideband Transmitters for High Speed Millimeter Wave Wireless Communication Links

Download or read book Digitally Assisted Fully Integrated Wideband Transmitters for High Speed Millimeter Wave Wireless Communication Links written by David del Rio and published by Springer. This book was released on 2018-07-07 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents design methods and considerations for digitally-assisted wideband millimeter-wave transmitters. It addresses comprehensively both RF design and digital implementation simultaneously, in order to design energy- and cost-efficient high-performance transmitters for mm-wave high-speed communications. It covers the complete design flow, from link budget assessment to the transistor-level design of different RF front-end blocks, such as mixers and power amplifiers, presenting different alternatives and discussing the existing trade-offs. The authors also analyze the effect of the imperfections of these blocks in the overall performance, while describing techniques to correct and compensate for them digitally. Well-known techniques are revisited, and some new ones are described, giving examples of their applications and proving them in real integrated circuits.

Book Low power  High efficiency  and High linearity CMOS Millimeter wave Circuits and Transceivers for Wireless Communications

Download or read book Low power High efficiency and High linearity CMOS Millimeter wave Circuits and Transceivers for Wireless Communications written by Eric A. Juntunen and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation presents the design and implementation of circuits and transceivers in CMOS technology to enable many new millimeter-wave applications. A simple approach is presented for accurately modeling the millimeter-wave characteristics of transistors that are not fully captured by contemporary parasitic extraction techniques. Next, the integration of a low-power 60-GHz CMOS on-off keying (OOK) receiver in 90-nm CMOS for use in multi-gigabit per second wireless communications is demonstrated. The use of non-coherent OOK demodulation by a novel demodulator enabled a data throughput of 3.5 Gbps and resulted in the lowest power budget (31pJ/bit) for integrated 60-GHz CMOS OOK receivers at the time of publication. Also presented is the design of a high-power, high-efficiency 45-GHz VCO in 45-nm SOI CMOS. The design is a class-E power amplifier placed in a positive feedback configuration. This circuit achieves the highest reported output power (8.2 dBm) and efficiency (15.64%) to date for monolithic silicon-based millimeter-wave VCOs. Results are provided for the standalone VCO as well as after packaging in a liquid crystal polymer (LCP) substrate. In addition, a high-power high-efficiency (5.2 dBm/6.1%) injection locked oscillator is presented. Finally, the design of a 2-channel 45-GHz vector modulator in 45-nm SOI CMOS for LINC transmitters is presented. A zero-power passive IQ generation network and a low-power Gilbert cell modulator are used to enable continuous 360° vector generation. The IC is packaged with a Wilkinson power combiner on LCP and driven by external DACs to demonstrate the first ever 16-QAM generated by outphasing modulation in CMOS in the Q-band.

Book CMOS Front Ends for Millimeter Wave Wireless Communication Systems

Download or read book CMOS Front Ends for Millimeter Wave Wireless Communication Systems written by Noël Deferm and published by Springer. This book was released on 2015-03-23 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.

Book Deep Sub micron RF CMOS Design and Applications of Modern UWB and Millimeter wave Wireless Transceivers

Download or read book Deep Sub micron RF CMOS Design and Applications of Modern UWB and Millimeter wave Wireless Transceivers written by Domenico Pepe and published by . This book was released on 2009 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research activity carried out during this PhD consists on the design of radio- frequency integrated circuits, for ultra-wideband (UWB) and millimeter-wave sys- tems, and covers the following topics: (i) radio-frequency integrated circuits for low-power transceivers for wireless local networks; (ii) fully integrated UWB radar for cardio-pulmonary monitoring in 90nm CMOS technology; (iii) 60-GHz low noise amplifer (LNA) in 65nm CMOS technology.

Book Millimeter Wave Sub Terahertz CMOS Transceivers for High Speed Wireless Communications

Download or read book Millimeter Wave Sub Terahertz CMOS Transceivers for High Speed Wireless Communications written by Shinwon Kang and published by . This book was released on 2014 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Millimeter-wave and sub-terahertz frequency bands are available for wideband applications such as high data-rate communication systems. As the respective wavelength is on the order of a millimeter, a compact on-chip antenna can be designed, thereby reducing the overall form factor and obviating expensive off-chip packaging. However, the channel propagation loss increases significantly with the frequency. Although CMOS technology is prevalent in digital processing and data communication, CMOS devices are lossy and inefficient at such high frequencies. Thus, it is challenging to implement an efficient and wideband transceiver at sub-terahertz frequencies using CMOS technology. The aim of this dissertation is to demonstrate sub-terahertz wireless links for high-speed chip-to-chip communication in CMOS. First, transceiver architectures and building blocks are discussed to address the challenges and limitations of the CMOS process. Two fully integrated CMOS transceivers, a 260 GHz OOK transceiver and a 240 GHz QPSK/BPSK transceiver, are then demonstrated using on-chip antennas. Frequency multiplication and mixer-first design are employed to operate beyond the cut-off frequency. In the QPSK modulation, a maximum data rate of 16 Gbps is realized with an energy efficiency of 30 pJ/bit. These demonstrations show that millimeter-wave/sub-terahertz wireless communication can be a promising solution for high-speed chip-to-chip communication. Improvements in the energy efficiency and silicon area of these wireless links can result in replacing or complementing existing wired links.

Book High Frequency Integrated Circuits

Download or read book High Frequency Integrated Circuits written by Sorin Voinigescu and published by Cambridge University Press. This book was released on 2013-02-28 with total page 921 pages. Available in PDF, EPUB and Kindle. Book excerpt: A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave, and optical fibre circuits using nanoscale CMOS, SiGe BiCMOS, and III-V technologies. Step-by-step design methodologies, end-of chapter problems, and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.

Book Wideband and Frequency Reconfigurable Millimeter Wave Transceiver and Transceiver Sub Block Design for the Multi Band Wireless Network on Chip Architecture

Download or read book Wideband and Frequency Reconfigurable Millimeter Wave Transceiver and Transceiver Sub Block Design for the Multi Band Wireless Network on Chip Architecture written by Joseph Lee Baylon and published by . This book was released on 2019 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: To meet the ever-increasing demands of computational power, multi-core processor integration has risen to new heights. The wireless network-on-chip is an emerging technology which seeks to augment inter-core interconnects on multi-core processors with high throughput, low power wireless interconnects. While this technology offers improvements in power and latency for on-chip communication networks, additional innovation is required to realize these system level benefits. To meet the speed, efficiency, and latency demands of the wireless network-on-chip architecture, highly efficient, wideband mmWave transceivers and sub-blocks must be designed.This thesis presents the design and analysis of mmWave transceiver sub-blocks as well as integrated transmitter and receiver systems. Two high-performance signal source circuits suitable for the requirements of the multi-band wireless network-on-chip architecture are presented. The first simultaneously provides multiple harmonically related outputs for non-overlapping frequency bands of a multi-band wireless network architecture. The signal source circuit consists of a 28 GHz voltage-controlled oscillator circuit which leverages transformer feedback for high output swing and low phase noise under a low voltage power supply and an efficient harmonic generation architecture. The second signal source leverages a phase-switched dual-mode inductor which presents different inductance under different phase excitation. In addition, a V-band receiver is presented which leverages a current re-use active feed-forward and feedback architecture for wide bandwidth demodulation and minimal power overhead. Additionally, the inductorless bandwidth extension technique reduces silicon area overhead. A W-band receiver is also proposed which leverages a dual-noise-matched active gain-boosted common-gate LNA architecture which provides wide input matching with reduced power overhead. Finally, a W-band transmitter based on a wideband direct-modulated on-off-keying oscillator is presented. Resonant pulse-generation is used to increase the initial energy across the resonant tank, dramatically reducing start-up time. Furthermore, dual active- and passive- Gm-boosting and adaptive amplitude control for reduced start-up time and decreased steady-state power consumption further improve the bandwidth of the direct modulation oscillator.The circuits described above were fabricated in a 65 nm CMOS technology and demonstrate state-of-the-art performance with low power consumption and low area overhead. The innovations in this work facilitate the low-power mmWave transceivers required for the multi-band WiNoC architecture.

Book Power and Area Optimization Techniques for Ultra wideband Millimeter wave CMOS Transceivers

Download or read book Power and Area Optimization Techniques for Ultra wideband Millimeter wave CMOS Transceivers written by Venumadhav Bhagavatula and published by . This book was released on 2013 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the past decade, opportunities for utilizing the broadband spectrum available at millimeter-wave (mm-wave) frequencies has motivated research on both short and long-range, highly-integrated complementary metal oxide semiconductor (CMOS) transceivers. Prototype mm-wave CMOS transceivers have been demonstrated for application in high-speed data transfer (57-64 GHz), wireless back-haul (71-76 GHz), automotive radar (77GHz) and medical imaging (90 GHz) systems. However, in spite of promising results, large scale deployment of mm-wave CMOS transceivers in portable and hand-held electronics is currently hindered by front-end power-consumptions on the order of several watts. Moreover, as a first order approximation, power consumption is directly proportional to system bandwidth. Therefore, as the bandwidth requirements of systems increase, the challenge with on-chip power consumption will become increasingly difficult to solve. In this dissertation, techniques for optimizing the power and area of ultra-wideband millimeter-wave transceivers are described. This work resulted in the fabrication of three mm-wave integrated circuits (IC), all of which were realized in a 6-metal layer 40-nm CMOS process. The first IC is a multi-stage transformer-feedback based 11-to-13 GHz direct-conversion receiver. The device achieves a 16% fractional-bandwidth, a peak power-gain of 27.6dB, and noise-figure of 5.3dB while consuming 28.8mW from a 0.9V supply. Second, a compact 24-54GHz 2-stage bandpass distributed amplifier utilizing mirror-symmetric Norton transformations to reduce inductor component values allowing efficient layout to occupy an active area of 0.15mm2. The device has a 77% fractional-bandwidth, an overall gain of 6.3dB, a minimum in-band IIP3 of 11dBm, while consuming 34mA from a 1V supply. The third, and the IC which includes the most integration among the three, is an ultra-broadband single-element heterodyne receiver intended for use in low-power phased-array systems. The receiver maintains 17GHz of bandwidth from the mm-wave front end, through a high-IF stage, and to the baseband output. The device occupies 1.2mm2 and exploits properties of gain-equalized transformers throughout the signal path to achieve an overall 17GHz bandwidth 20dB gain with a flat in-band response, 7.8dB DSB NF, and a P[subscript-1dB] of -24dBm, while consuming 104mW off a 1.1V supply.

Book High Power and Low Noise Circuit Techniques for Wideband RF  Millimeter Waves and Optical Wireline Systems in Advanced RFSOI Technologies

Download or read book High Power and Low Noise Circuit Techniques for Wideband RF Millimeter Waves and Optical Wireline Systems in Advanced RFSOI Technologies written by Omar Essam Elaassar and published by . This book was released on 2020 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: The inevitable migration to deeply-scaled technology nodes forces special considerations on high-power, low-noise, and high spectral purity integrated circuits. The dissertation addresses these considerations for a wide spectrum of RF, mm-waves, and optical-wireline circuits in advanced CMOS SOI technologies. The major contributions are in distributed power amplifiers (DPAs), optical drivers, RF and mm-wave voltage controlled oscillators (VCOs), mm-waves low-noise amplifiers (LNAs), and high linearity mixers. The work in power amplifiers culminated in the design and measurement of several novel ultra-wide-band DPAs/drivers with 100+GHz of bandwidth (BW) in GlobalFoundries 45nm RFSOI technology. Several design techniques are introduced to break the gain-bandwidth (GBW), and power-BW trade-offs in conventional distributed designs. The first PMOS-only DPA with 100+GHz BW is demonstrated exploiting the decreasing gap between NMOS and PMOS performance in deeply-scaled technology nodes. Transistors stacking is exploited for high power while introducing two new stack compensation techniques, the multi-drive intra-stack and inter-stack coupling. Improved stability coupling networks and magnetic field confining transmission lines are also devised to allow high gain stable operation. Over 4.5 THz GBW is recorded from a cascaded DPA and over 100 Gb/s is measured in both 64-QAM and PAM-4 modulations for a CMOS modulator driver. The mm-wave 5G LNAs contributions focus on K/Ka bands designs for next generation phased-array systems and exploits the body-bias of fully depleted SOI devices to control the linearity and gain of LNAs in 22nm FDSOI technology. The efforts in RF and mm-waves LC VCOs focus on implementations in deeply scaled 22nm FDSOI technology node. New circuit techniques are proposed to allow ultra-low-voltage operation (sub 0.1 V), low flicker noise variability across the tuning range without a dedicated tuning for the common-mode, ultra-low phase noise while using thin-oxide only devices, and over 70% of tuning range spanning the X and Ku-bands. The work in high linearity mixers exploits the enhancement of the figure of merit of CMOS switches in new technology nodes, to implement all-passive 16-path harmonic-reject mixers with watt-level IIP3 and over 35 dBc harmonic rejection ratio for all harmonics up to 3 GHz.

Book CMOS Mm wave Transceivers for Gbps Wireless Communication Project Supported in Part by the National Natural Science Foundation of China  No  61331003

Download or read book CMOS Mm wave Transceivers for Gbps Wireless Communication Project Supported in Part by the National Natural Science Foundation of China No 61331003 written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: The challenges in the design of CMOS millimeter-wave (mm-wave) transceiver for Gbps wireless communication are discussed. To support the Gbps data rate, the link bandwidth of the receiver/transmitter must be wide enough, which puts a lot of pressure on the mm-wave front-end as well as on the baseband circuit. This paper discusses the effects of the limited link bandwidth on the transceiver system performance and overviews the bandwidth expansion techniques for mm-wave amplifiers and IF programmable gain amplifier. Furthermore, dual-mode power amplifier (PA) and self-healing technique are introduced to improve the PA's average efficiency and to deal with the process, voltage, and temperature variation issue, respectively. Several fully-integrated CMOS mm-wave transceivers are also presented to give a short overview on the state-of-the-art mm-wave transceivers.

Book New Circuit Techniques Enabling Millimeter wave and Terahertz Transceivers in Nanoscale Silicon

Download or read book New Circuit Techniques Enabling Millimeter wave and Terahertz Transceivers in Nanoscale Silicon written by Zheng Wang and published by . This book was released on 2014 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: The vastly under-utilized spectrum in the sub-THz frequency range enables disruptive applications including 10Gb/s chip-to-chip wireless communications and imaging/spectroscopy. Owing to aggressive scaling in feature size and device f [subscript T] /f [subscript max], nanoscale CMOS technology potentially enables integration of sophisticated systems at this frequency range. This dissertation mainly focuses on the design of a 210GHz fundamental transceiver and also covers the design of a W-band fully integrated imaging system utilizing a novel concept of spatial-overlapping super pixels. Firstly, a 210GHz transceiver with OOK modulation in a 32nm SOI CMOS process (f [subscript T] /f [subscript max] = 250/320GHz) is presented. The transmitter (TX) employs a 2x2 spatial combining array consisting of a double-stacked cross-coupled voltage controlled oscillator (VCO) at 210GHz with an on-off-keying (OOK) modulator, a power amplifier (PA) driver, a novel balun-based differential power distribution network, four PAs and an on-chip 2x2 dipole antenna array. The non-coherent receiver (RX) utilizes a direct detection architecture consisting of an on-chip antenna, a low noise amplifier (LNA), and a power detector. The VCO generates measured -13.5dBm output power; and the PA shows a measured 15dB gain and 4.6dBm [rho][subscript sat]. The LNA exhibits a measured in-band gain of 18dB and minimum in-band noise figure (NF) of 11dB. The TX achieves an EIRP of 5.13dBm at 10dB back-off from saturated power. It achieves an estimated EIRP of 15.2dBm when the PAs are fully driven. This is the first demonstration of a fundamental frequency CMOS transceiver at the 200GHz frequency range. Secondly, a W-band direct-detection-based receiver array in an advanced 0.18[mu]m BiCMOS process is presented, which incorporates a new concept of spatial-overlapping super-pixels for millimeter-wave imaging applications. The use of spatial-overlapping super-pixels results in (1) improved SNR at the pixel level through a reduction of spillover losses, (2) partially correlated adjacent super-pixels, (3) a 2©72 window averaging function in the RF domain, (4) the ability to compensate for the systematic phase delay and amplitude variations due to the off-focal-point effect for antennas away from the focal point, and (5) the ability to compensate for mutual coupling effects among the array elements. The receiver chip achieves a measured peak coherent responsivity of 1,150MV/W, an incoherent responsivity of 1,000MV/W, a minimum noise-equivalent power (NEP) of 0.28fW/Hz [superscript 1/2] and a front-end 3-dB bandwidth from 87-108GHz, while consuming 225mW per receiver element. The measured noise-equivalent temperature difference (NETD) of the SiGe receiver chip is 0.45K with a 20ms integration time.

Book Integrated 60GHz RF Beamforming in CMOS

Download or read book Integrated 60GHz RF Beamforming in CMOS written by Yikun Yu and published by Springer Science & Business Media. This book was released on 2011-01-06 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integrated 60GHz RF Beamforming in CMOS describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters with other key building blocks such as low noise amplifiers and power amplifiers are described in detail. Finally, this book describes the integration of a 60GHz CMOS amplifier and an antenna in a printed circuit-board (PCB) package.