Download or read book Design of Silicon Power Ampliers and Arrays for Millimeter Wave Applications written by Bassel Hanafi and published by . This book was released on 2014 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: With emerging millimeter wave applications including automotive radars, wireless transmission of high-definition content, and possibly 5G mobile communications, low cost and high performance power amplifiers are key for enabling a commercial mass market. Silicon technologies offer cost advantages but typically suffer from low breakdown voltage and low Q passive elements yielding low power density and low efficiency. This thesis presents millimeter wave power amplifiers implemented in main stream silicon technologies. The task of obtaining large output power from low breakdown silicon devices is addressed by the use of stacking and power combining techniques. The design of a Q-band amplifier implemented in IBM 0.13um SiGe HBT process featuring on-chip corporate combining is first described. Stacking of bipolar transistors is introduced, together with novel low impedance biasing circuits to enable high breakdown voltage while extending the output swings. The fabricated amplifier delivered 24.7 dBm of maximum output power at 39 GHz, and 6.5% efficiency at 5.2 V without degradation. Alternatively, free-space combining can eliminate lossy on-chip combiners allowing for higher power and efficiency. A chip of 8 unit amplifiers implemented in 45nm CMOS SOI feeding a 2x2 array of differentially-fed patch antennas is demonstrated. With this chip, using CMOS stacking techniques, high output power (28 dBm) was achieved from a 3-stage amplifier operating at 45 GHz. When coupled to the antennas, the array provided an equivalent isotropic radiated power (EIRP) of 40 dBm (10 W), and a larger system comprising 4 chips feeding a 2x8 array was shown to deliver an EIRP of 50 dBm (100 W) at 45 GHz, while demonstrating, for the first time, a total RF power of 33 dBm which is a record in silicon at this frequency. The estimated peak PAE for both arrays are 13.5% and 10.7%, respectively. Finally, power amplifiers implemented in SOI technology can suffer from severe self-heating. The thermal behavior of CMOS SOI PAs is evaluated using 3D thermal simulations, and the effects of the back-end interconnect as well as the layout on the overall thermal resistance are discussed. The models were verified against measurements for an individual FET using the output conductance method. For a stacked-FET PA fabricated in 45nm CMOS SOI, the models reveal an excessive temperature rise of 150C for the FETs at maximum power, hence simple ideas were proposed to improve the thermal resistance of SOI circuits, with limited impact on electrical performance.

Download or read book RF and mm Wave Power Generation in Silicon written by Hua Wang and published by Academic Press. This book was released on 2015-12-10 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt: RF and mm-Wave Power Generation in Silicon presents the challenges and solutions of designing power amplifiers at RF and mm-Wave frequencies in a silicon-based process technology. It covers practical power amplifier design methodologies, energy- and spectrum-efficient power amplifier design examples in the RF frequency for cellular and wireless connectivity applications, and power amplifier and power generation designs for enabling new communication and sensing applications in the mm-Wave and THz frequencies. With this book you will learn: Power amplifier design fundamentals and methodologies Latest advances in silicon-based RF power amplifier architectures and designs and their integration in wireless communication systems State-of-the-art mm-Wave/THz power amplifier and power generation circuits and systems in silicon Extensive coverage from fundamentals to advanced design topics, focusing on various layers of abstraction: from device modeling and circuit design strategy to advanced digital and mixed-signal architectures for highly efficient and linear power amplifiers New architectures for power amplifiers in the cellar and wireless connectivity covering detailed design methodologies and state-of-the-art performances Detailed design techniques, trade-off analysis and design examples for efficiency enhancement at power back-off and linear amplification for spectrally-efficient non-constant envelope modulations Extensive coverage of mm-Wave power-generation techniques from the early days of the 60 GHz research to current state-of the-art reconfigurable, digital mm-Wave PA architectures Detailed analysis of power generation challenges in the higher mm-Wave and THz frequencies and novel technical solutions for a wide range for potential applications, including ultrafast wireless communication to sensing, imaging and spectroscopy Contributions from the world-class experts from both academia and industry

Download or read book Power Combining Techniques for Millimeter wave Silicon Power Amplifiers written by Jefy Alex Jayamon and published by . This book was released on 2017 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging millimeter-wave applications, including high speed wireless communication using 5G standards, favor silicon technologies, both CMOS and SiGe, for transceiver design, due to the high level of integration at reduced cost and availability of high speed transistors. Efficient, linear and reliable high power amplifiers with broad bandwidth are needed at the transmitter front-ends to enable high data rate links at long distances. But the low breakdown voltage of CMOS FETs due to gate length scaling and other transistor non-idealities make the design of high power mm-wave amplifiers in deeply scaled CMOS nodes difficult. Circuit techniques like FET stacking provide a compact and efficient way of implementing high power mm-wave amplifiers reliably. Other power combining techniques such as on-chip and spatial power combining can be used along with FET stacking to achieve even higher output power levels. This thesis investigates the design of high power mm-wave power amplifiers at frequencies from 28 GHz to 94 GHz, using multiple power combining techniques. This work extends the use of FET stacking for high power PA design to 94 GHz. A 3-stack PA designed in 45 nm CMOS SOI with 17 dBm output power and 9% efficiency is presented. Using this PA as front-end, a CMOS PA-antenna array is designed, to additionally provide spatial power combining. The CMOS chip has a 2 x 4 array of pseudo-differential power amplifiers along with the signal distribution networks and pre-drivers. A quartz wafer with a 2 x 4 array of differential microstrip antennas deposited on it is placed on top of the CMOS chip, electromagnetically coupled to the PA outputs on the CMOS chip. The spatially power combined PA-antenna array achieved a measured equivalent isotropic radiated power (EIRP) of 33 dBm and an estimated output power of 24 dBm at 94 GHz. Modulated data measurements at 3 Gbps (375 MS/s, 256 QAM) speed using digital pre-distortion are demonstrated with the PA-antenna array. A novel layout style is introduced for stacked FET design at low mm-wave frequencies. A small multi-finger FET is laid out with fingers connected in series to create the stacked FET. The gate capacitors are realized around the FET with the back-end-of-line metal available in the CMOS process. Multiple multigate cells are interconnected to implement the stacked FET PA. A PA designed in this style in 45 nm CMOS SOI process achieved 24.8 dBm of output power and 29% PAE at 28 GHz with high reliability. This PA is very broadband and linear as shown by the modulated data measurements achieving a data rate of 36 Gbps (6 GS/s, 64 QAM) at 14 dBm with 9.3% PAE, with no digital predistortion. NFETs and PFETs available in nano-scale CMOS processes are compared and it is shown that in deeply scaled processes, PMOS devices are a viable alternative to NFETs due to their cut-off frequencies similar to those of NFETs, and higher breakdown voltages than NFETs. The first exclusively PMOS mm-wave PA design is reported. This 3-stack PA, made in 32 nm CMOS SOI process, achieved a maximum output power of 19.6 dBm and maximum efficiency of 24% at 78 GHz. All the designs reported in this thesis achieved either the highest output power or the highest PAE for a CMOS PA at their respective frequencies.

Download or read book mm Wave Silicon Power Amplifiers and Transmitters written by Hossein Hashemi and published by Cambridge University Press. This book was released on 2016-04-04 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: Build high-performance, spectrally clean, energy-efficient mm-wave power amplifiers and transmitters with this cutting-edge guide to designing, modeling, analysing, implementing and testing new mm-wave systems. Suitable for students, researchers and practicing engineers, this self-contained guide provides in-depth coverage of state-of-the-art semiconductor devices and technologies, linear and nonlinear power amplifier technologies, efficient power combining systems, circuit concepts, system architectures and system-on-a-chip realizations. The world's foremost experts from industry and academia cover all aspects of the design process, from device technologies to system architectures. Accompanied by numerous case studies highlighting practical design techniques, tradeoffs and pitfalls, this is a superb resource for those working with high-frequency systems.

Download or read book Linearization and Efficiency Enhancement Techniques for Silicon Power Amplifiers written by Eric Kerhervé and published by Elsevier. This book was released on 2015-01-07 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniques The architectures allowing the optimum design of multimode Si RF and mmW power amplifiers How to make designs more efficient by employing new design techniques such as linearization and efficiency improvement Layout considerations Examples of schematic, layout, simulation and measurement results Addresses the problems of high power generation, faithful construction of non-constant envelope constellations, and efficient and well control power radiation from integrated silicon chips Demonstrates how silicon technology can solve problems and trade-offs of power amplifier design, including price, size, complexity and efficiency Written and edited by the top contributors to the field

Download or read book Millimeter Wave Power Amplifiers written by Jaco du Preez and published by Springer. This book was released on 2017-10-05 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed review of millimeter-wave power amplifiers, discussing design issues and performance limitations commonly encountered in light of the latest research. Power amplifiers, which are able to provide high levels of output power and linearity while being easily integrated with surrounding circuitry, are a crucial component in wireless microwave systems. The book is divided into three parts, the first of which introduces readers to mm-wave wireless systems and power amplifiers. In turn, the second focuses on design principles and EDA concepts, while the third discusses future trends in power amplifier research. The book provides essential information on mm-wave power amplifier theory, as well as the implementation options and technologies involved in their effective design, equipping researchers, circuit designers and practicing engineers to design, model, analyze, test and implement high-performance, spectrally clean and energy-efficient mm-wave systems.

Download or read book Millimeter Wave Circuits for 5G and Radar written by Gernot Hueber and published by Cambridge University Press. This book was released on 2019-06-20 with total page 455 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discover the concepts, architectures, components, tools, and techniques needed to design millimeter-wave circuits for current and emerging wireless system applications. Focusing on applications in 5G, connectivity, radar, and more, leading experts in radio frequency integrated circuit (RFIC) design provide a comprehensive treatment of cutting-edge physical-layer technologies for radio frequency (RF) transceivers - specifically RF, analog, mixed-signal, and digital circuits and architectures. The full design chain is covered, from system design requirements through to building blocks, transceivers, and process technology. Gain insight into the key novelties of 5G through authoritative chapters on massive MIMO and phased arrays, and learn about the very latest technology developments, such as FinFET logic process technology for RF and millimeter-wave applications. This is an essential reading and an excellent reference for high-frequency circuit designers in both academia and industry.

Download or read book mm Wave Silicon Power Amplifiers and Transmitters written by Hossein Hashemi and published by Cambridge University Press. This book was released on 2016-04-04 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: Build high-performance, energy-efficient circuits with this cutting-edge guide to designing, modeling, analysing, implementing and testing new mm-wave systems.

Download or read book CMOS 60 GHz and E band Power Amplifiers and Transmitters written by Dixian Zhao and published by Springer. This book was released on 2015-06-29 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.

Download or read book mm Wave Silicon Technology written by Ali M. Niknejad and published by Springer Science & Business Media. This book was released on 2008-01-03 with total page 313 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book compiles and presents the research results from the past five years in mm-wave Silicon circuits. This area has received a great deal of interest from the research community including several university and research groups. The book covers device modeling, circuit building blocks, phased array systems, and antennas and packaging. It focuses on the techniques that uniquely take advantage of the scale and integration offered by silicon based technologies.

Download or read book Design of Millimeter Wave Power Ampliers in Silicon written by Nader Kalantari and published by . This book was released on 2013 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first part of this dissertation focuses on the millimeter-wave power amplifier in silicon where both switching and linear power amplifiers were investigated. In Chapter 2, a Q-band, Class-E power amplifier has been designed and fabricated in a 120 nm SiGe BiCMOS technology. The amplifier was designed for high output power using on-chip power combining networks. It operates respectively from a 1.2 V supply for peak efficiency and a 2.4 V supply for maximum power and occupies an area of 0.801 mm2. A peak PAE of 18% is measured for an output power of 11.3 dBm at 45 GHz and a maximum of 19.4 dBm is measured at 42 GHz with a PAE of 14.4%. The power amplifier operates from 42 to 50 GHz. Chapter 3, presents a W-band, tapered constructive wave power amplifier (TCWPA) that has been designed and fabricated in a 120 nm SiGe BiCMOS technology. The amplifier has a 3 dB BW of 19 GHz from 91-110 GHz and a maximum gain of 12.5 dB at 101 GHz. At 98 GHz, OP1dB is 4.9 dBm. At 97 GHz, saturated output power is 5.9 dBm and the PAE is 7.2%. The amplifier operates from a 2.4 V supply and occupies an area of 0.22 mm2. A novel circuit topology for power amplifier was introduced in Chapter 4 where only one network is used to provide both input and output matching. This new topology incorporates a feedback network around the transistor to satisfy matching requirements. Circuit parameters can be tuned for small- and large-signal circuit operation. The power amplifier is fabricated in a 120 nm SiGe BiCMOS process and performs from 36 to 41 GHz. The PA achieves a saturated output power of 23 dBm and a peak power added efficiency of 20% at 38 GHz. The second part of this dissertation focuses on the performance analysis of phase-interpolated dual loop clock and data recovery. It presents a four channel receiver for high-speed signal conditioning. Each channel consists of a continuous time linear equalizer (CTLE) and a dual loop CDR with phase-interpolator. All channels share a single PLL that generates and distributes quadrature clock phases to each CDR for data recovery. Clock amplitude, phase INL and phase DNL are derived for IQ phase error and predict phase-dependent jitter contributions to the recovered clock. The multilane receiver was designed in 130 nm CMOS technology. The die occupies an area of 1930 [mu]m by 1250 [mu]m and consumes 67.9 mW per channel. It achieves a maximum data rate of 7 Gbps per channel for 0 and ±200 ppm clock frequency deviation. Quadrature clocks are used in locking mechanism of phase-interpolated CDRs. Due to circuit non-idealities, any mismatch in the quadraure phase causes jitter increase and ultimately increase of bit error rate. The material is presented in Chapter 5.

Download or read book Millimeter Wave GaN Power Amplifier Design written by Edmar Camargo and published by Artech House. This book was released on 2022-05-31 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives you – in one comprehensive and practical resource -- everything you need to successfully design modern and sophisticated power amplifiers at mmWave frequencies. The book provides an in-depth treatment of the design methodology for MMIC power amplifiers, then brings you step by step through the various phases of design, from the selection of technology and preliminary architecture considerations, to the effective design of the matching circuits and conversion of electrical-to-electromagnetic models. Detailed figures and numerous practical applications are included to help you gain valuable insights into these technologies and learn to identify the best path to a successful design. You’ll be guided through a range of new mmWave power applications that show particular promise to support new 5G systems, while mastering the use of GaN technology that continues to dominate the power mmWave applications due to its high power, gain, and efficiency. This is a valuable resource for power amplifier design engineers, technicians, industry R&D staff, and anyone getting into the area of power MMICs who wants to learn how to design at mmWave frequencies.

Download or read book High Performance Radio frequency and Millimeter wave Front end Integrated Circuits Design in Silicon based Technologies written by Jihwan Kim and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Design techniques and procedures to improve performances of radio-frequency and millimeter-wave front-end integrated circuits were developed. Power amplifiers for high data-rate wireless communication applications were designed using CMOS technology employing a novel device resizing and concurrent power-combining technique to implement a multi-mode operation. Comprehensive analysis on the efficiency degradation effect of multi-input-single-output combining transformers with idle input terminals was performed. The proposed discrete resizing and power-combining technique effectively enhanced the efficiency of a linear CMOS power amplifier at back-off power levels. In addition, a novel power-combining transformer that is suitable to generate multi-watt-level output power was proposed and implemented. Employing the proposed power-combining transformer, a high-power linear CMOS power amplifier was designed. Furthermore, receiver building blocks such as a low-noise amplifier, a down-conversion mixer, and a passive balun were implemented using SiGe technology for W-band applications.

Download or read book High Efficiency Power Amplifier Design for 28 GHz 5G Transmitters written by Nourhan Elsayed and published by Springer Nature. This book was released on 2022-02-02 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces power amplifier design in 22nm FDSOI CMOS dedicated towards 5G applications at 28 GHz and presents 4 state-of-the-art power amplifier designs. The authors discuss power amplifier performance metrics, design trade-offs, and presents different power amplifier classes utilizing efficiency enhancement techniques at 28 GHz. The book presents the design process from theory, simulation, layout, and finally measurement results.

Download or read book Integrated Sub Millimeter Wave High Power Amplifiers in Advanced InGaAs Channel HEMT Technology written by Laurenz John and published by Fraunhofer Verlag. This book was released on 2021-12-09 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: Driven by the large absolute bandwidths that are available at the sub-mm-wave frequency range around 300 GHz, wireless high-data-rate communication systems and high-resolution imaging applications are being extensively investigated in recent years. Due to their superior characteristics in terms of noise figure and cutoff frequencies, InGaAs-channel HEMT devices have proven to be a key technology to implement the required active front-end MMICs for these wireless THz systems, enabling ultra-high bandwidths and state-of-the-art noise performance. This work describes the modeling, design, and characterization of 300-GHz HEMT-based power amplifier cells and demonstrates the implementation of highly compact amplifier MMICs and broadband waveguide modules. These amplifiers are key components for the implementation of high-performance chipsets for wireless THz systems, providing high output power for the utilization of next-generation communication and imaging applications. A unique amplifier topology based on multi-finger cascode and common-source devices is developed and evaluated, demonstrating more than 20-mW measured output power at the sub-mm-wave frequency range around 300 GHz.

Download or read book The Load pull Method of RF and Microwave Power Amplifier Design written by John F. Sevic and published by John Wiley & Sons. This book was released on 2020-07-21 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the load-pull method for RF and microwave power amplifier design This new book on RF power amplifier design, by industry expert Dr. John F. Sevic, provides comprehensive treatment of RF PA design using the load-pull method, the most widely used and successful method of design. Intended for the newcomer to load-pull, or the seasoned expert, the book presents a systematic method of generation of load-pull contour data, and matching network design, to rapidly produce a RF PA with first-pass success. The method is suitable from HF to millimeter-wave bands, discrete or integrated, and for high-power applications. Those engaged in design or fundamental research will find this book useful, as will the student new to RF and interested in PA design. The author presents a complete pedagogical methodology for RF PA design, starting with treatment of automated contour generation to identify optimum transistor performance with constant source power load-pull. Advanced methods of contour generation for simultaneous optimization of many variables, such as power, efficiency, and linearity are next presented. This is followed by treatment of optimum impedance identification using contour data to address specific objectives, such as optimum efficiency for a given linearity over a specific bandwidth. The final chapter presents a load-pull specific treatment of matching network design using load-pull contour data, applicable to both single-stage and multi-stage PA's. Both lumped and distributed matching network synthesis methods are described, with several worked matching network examples. Readers will see a description of a powerful and accessible method that spans multiple RF PA disciplines, including 5G base-station and mobile applications, as well as sat-com and military applications; load-pull with CAD systems is also included. They will review information presented through a practical, hands-on perspective. The book: Helps engineers develop systematic, accurate, and repeatable approach to RF PA design Provides in-depth coverage of using the load-pull method for first-pass design success Offers 150 illustrations and six case studies for greater comprehension of topics

Download or read book Silicon based Millimeter wave Circuits for W band Applications written by Chun-Cheng Wang and published by . This book was released on 2012 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: Historically, monolithic microwave integrated circuits (MMICs) have been designed using III-V semiconductor technologies, such as GaAs and InP. In recent years, the number of publications reporting silicon-based millimeter-wave (mm-wave) transmitter, receivers, and transceivers has grown steadily. For mm-wave applications including gigabit/s point-to-point links (57-64 GHz), automotive radar (77-81 GHz) and imaging (94 GHz) to reach mainstream market, the cost, size and power consumption of silicon-based solution has to be significantly below what is being achieved today using compound semiconductor technology. This dissertation focuses the effort of designing and implementing silicon-based solutions through circuit- and system-level innovation for applications in the W-band frequency band (75-110GHz), in particular, 94GHz passive imaging band. A W-band front-end receiver in 65nm CMOS based entirely on slow-wave CPW (SW-CPW) with frequency tripler as the LO is designed and measured. The receiver achieves a total gain of 35-dB, -3dB-BW of 12 GHz, a NF of 9-dB, a P1-dB of -40dBm, a low power consumption of 108mW under 1.2/0.8V. This front-end receiver chipset in conjuction with an analog back-end can be used to form a radiometer. Leveraging the work done in 65nm CMOS, the first integrated 2x2 focal-plane array (FPA) for passive imaging is implemented in a 0.18um SiGe BiCMOS process (fT/fmax=200/180GHz). The FPA incorporates four Dicke-type receivers. Each receiver employs a direct-conversion architecture consisting of an on-chip slot dipole antenna, an SPDT switch, a lower noise amplifier, a single-balanced mixer, an injection-locked frequency tripler (ILFT), a zero-IF variable gain amplifier, a power detector, an active bandpass filter and a synchronous demodulator. The LO signal is generated by a shared Ka-band PLL and distributed symmetrically to four ILFTs. This work demonstrates the highest level of integration of any silicon-based systems in the 94GHz imaging band. Finally, the main design bottleneck of any wireless transceiver system, the frequency synthesizer/phase-locked loop is investigated. Two monolithically integrated W-band frequency synthesizers are presented. Implemented in a 0.18um SiGe BiCMOS, both architectures incorporate the same 30.3-33.8GHz PLL core. One synthesizer uses an injection-locked frequency tripler (ILFT) with locking range of 92.8-98.1GHz and the other employ a harmonic-based frequency tripler (HBFT) with 3-dB bandwidth of 10.5GHz from 90.9-101.4GHz, respectively. The frequency synthesizer is suitable for integration in mm-wave phased array and multi-pixel systems such as W-band radar/imaging and 120GHz Gb/s communication.