Download or read book Design Characterization and Modeling of Charge Trapping Nonvolatile Semiconductor Memory Devices written by Nathan Eichenlaub and published by ProQuest. This book was released on 2009 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt: Methods for optimizing the gate stack of charge trapping NVSM devices are also examined in this thesis. The performance of silicon-rich and stoichiometric nitride layers are compared, as well as multi-layer nitrides composed of a mixture of the two types. Stoichiometric silicon nitride (Si3N 4) is shown to improve retention in MANOS devices without sacrificing programming speed.
Download or read book Characterization and Modeling of Charge Trapping and Retention in Novel Multi dielectric Nonvolatile Semiconductor Memory Devices written by Anirban Roy and published by . This book was released on 1989 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization and Modeling of Advanced Charge Trapping Non Volatile Memories written by Vincenzo Della marca and published by . This book was released on 2013 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: The silicon nanocrystal memories are one of the most attractive solutions to replace the Flash floating gate for nonvolatile memory embedded applications, especially for their high compatibility with CMOS process and the lower manufacturing cost. Moreover, the nanocrystal size guarantees a weak device-to-device coupling in an array configuration and, in addition, for this technology it has been shown the robustness against SILC. One of the main challenges for embedded memories in portable and contactless applications is to improve the energy consumption in order to reduce the design constraints. Today the application request is to use the Flash memories with both low voltage biases and fast programming operation. In this study, we present the state of the art of Flash floating gate memory cell and silicon nanocrystal memories. Concerning this latter device, we studied the effect of main technological parameters in order to optimize the cell performance. The aim was to achieve a satisfactory programming window for low energy applications. Furthermore, the silicon nanocrystal cell reliability has been investigated. We present for the first time a silicon nanocrystal memory cell with a good functioning after one million write/erase cycles, working on a wide range of temperature [-40°C; 150°C]. Moreover, ten years data retention at 150°C is extrapolated. Finally, the analysis concerning the current and energy consumption during the programming operation shows the opportunity to use the silicon nanocrystal cell for low power applications. All the experimental data have been compared with the results achieved on Flash floating gate memory, to show the performance improvement.
Download or read book Charge Trapping Non Volatile Memories written by Panagiotis Dimitrakis and published by Springer. This book was released on 2015-08-05 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
Download or read book Charge Trapping Non Volatile Memories written by Panagiotis Dimitrakis and published by Springer. This book was released on 2017-02-14 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1989 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Endurance Characterization and Improvement of Floating Gate Semiconductor Memory Devices written by Faraz I. Khan and published by . This book was released on 2009 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low power consumption, virtually zero latency, extremely fast boot-up for OS and applications, fast data access, portability, and high shock resistance are some of many reasons that make Flash memory devices an ideal choice for a vast variety of consumer electronics. Flash memory is a specific type of non-volatile EEPROM. A typical Flash memory cell looks similar to a MOSFET, except that it has a dual-gate structure. Flash memory cells use the principle of threshold voltage modulation to alter the channel current (Ids) when a reference read voltage (Vread) is applied to the control gate. Different levels of Ids are, in turn, interpreted as unique logic states. Fowler-Nordheim tunneling is used to achieve threshold voltage modulation in NAND Flash memory cells. Despite its high performance potential, NAND Flash memory suffers from the drawback of limited program/erase endurance. High field/current stress caused by Fowler-Nordheim tunneling (during program/erase cycling) leads to tunnel oxide degradation, which eventually limits the endurance characteristics of NAND Flash memory cells. One of the most significant tunnel oxide degradation mechanisms is charge trapping. This work is devoted to the study of charge trapping and its effects on the endurance characteristics and reliability of NAND Flash memory devices. Cell threshold voltage shift and memory window narrowing, a direct consequence of tunnel oxide degradation caused by charge trapping, are typical failure modes in NAND Flash memory cells. In this work, endurance characterization of NAND Flash memory devices and a detailed analysis has been conducted reconfirming the issue of limited program/erase endurance. Subsequently, a novel NAND Flash memory cell design has been proposed which eliminates tunnel oxide degradation caused by Fowler-Nordheim tunneling. Device simulations (using the Sentaurus TCAD tool suite by Synopsys®, Inc.) and corresponding analysis show that, as compared to conventional cells, the proposed cell design offers a 10 times reduction in intrinsic threshold voltage shift. That, according to the measured endurance characteristics of cells fabricated in this work, translates to an improvement of over 200 times in program/erase endurance. In a nutshell, the proposed cell design offers superior reliability and endurance as compared to conventional NAND Flash memory cells.
Download or read book Nonvolatile Memories written by Tseung-Yuen Tseng and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanomaterials Based Charge Trapping Memory Devices written by Ammar Nayfeh and published by Elsevier. This book was released on 2020-05-27 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rising consumer demand for low power consumption electronics has generated a need for scalable and reliable memory devices with low power consumption. At present, scaling memory devices and lowering their power consumption is becoming more difficult due to unresolved challenges, such as short channel effect, Drain Induced Barrier Lowering (DIBL), and sub-surface punch-through effect, all of which cause high leakage currents. As a result, the introduction of different memory architectures or materials is crucial. Nanomaterials-based Charge Trapping Memory Devices provides a detailed explanation of memory device operation and an in-depth analysis of the requirements of future scalable and low powered memory devices in terms of new materials properties. The book presents techniques to fabricate nanomaterials with the desired properties. Finally, the book highlights the effect of incorporating such nanomaterials in memory devices. This book is an important reference for materials scientists and engineers, who are looking to develop low-powered solutions to meet the growing demand for consumer electronic products and devices. - Explores in depth memory device operation, requirements and challenges - Presents fabrication methods and characterization results of new nanomaterials using techniques, including laser ablation of nanoparticles, ALD growth of nano-islands, and agglomeration-based technique of nanoparticles - Demonstrates how nanomaterials affect the performance of memory devices
Download or read book Semiconductor Memories and Systems written by Andrea Redaelli and published by Woodhead Publishing. This book was released on 2022-06-07 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. - Features contributions from experts from leading companies in semiconductor memory - Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories - Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory - Includes emerging storage class memory technologies such as phase change memory
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2006 with total page 774 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Characterization of the Reliability of Nonvolatile Semiconductor Memory Devices written by Yin Hu and published by . This book was released on 1992 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Frontiers In Electronics With Cd rom Proceedings Of The Wofe 04 written by Michael S Shur and published by World Scientific. This book was released on 2006-08-10 with total page 774 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.
Download or read book Emerging Low Power Semiconductor Devices written by Shubham Tayal and published by CRC Press. This book was released on 2022-08-31 with total page 307 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives insight into the emerging semiconductor devices from their applications in electronic circuits. It discusses the challenges in the field of engineering and applications of advanced low-power devices. Emerging Low-Power Semiconductor Devices: Applications for Future Technology Nodes offers essential exposure to low-power devices, and applications in wireless, biosensing, and circuit domains. This book provides a detailed discussion on all aspects, including the current and future scenarios related to the low-power device. The book also presents basic knowledge about field-effect transistor (FET) devices and introduces emerging and novel FET devices. The chapters include a review of the usage of FET devices in various domains like biosensing, wireless, and cryogenics applications. The chapters also explore device-circuit co-design issues in the digital and analog domains. The content is presented in an easy-to-follow manner that makes it ideal for individuals new to the subject. This book is intended for scientists, researchers, and postgraduate students looking for an understanding of device physics, circuits, and systems.
Download or read book Nonvolatile Semiconductor Memories written by Chenming Hu and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanocrystals in Nonvolatile Memory written by Writam Banerjee and published by CRC Press. This book was released on 2024-08-09 with total page 683 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals in various applications have attracted considerable scientific attention in the field of nonvolatile memory (NVM). Nanocrystals are the driving elements that have helped nonvolatile flash memory technology reach its distinguished height, but new approaches are still needed to strengthen nanocrystal-based nonvolatile technology for future applications. This book presents comprehensive knowledge on nanocrystal fabrication methods and applications of nanocrystals in baseline NVM and emerging NVM technologies and the chapters are written by experts in the field from all over the globe. The book presents a detailed analysis on nanocrystal-based emerging devices by a high-level researcher in the field. It has a unique chapter especially dedicated to graphene-based flash memory devices, considering the importance of carbon allotropes in future applications. This updated edition covers emerging ferroelectric memory device, which is a technology for the future, and the chapter is contributed by the well-known Ferroelectric Memory Company, Germany. It includes information related to the applications of emerging memories in sensors and the chapter is contributed by Ajou University, South Korea. The book introduces a new chapter for emerging NVM technology in artificial intelligence and the chapter is contributed by University College London, UK. It guides the readers throughout with appropriate illustrations, excellent figures, and references in each chapter. It is a valuable tool for researchers and developers from the fields of electronics, semiconductors, nanotechnology, materials science, and solid-state memories.
Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1978 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:
