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Book Low Voltage Power MOSFETs

Download or read book Low Voltage Power MOSFETs written by Jacek Korec and published by Springer Science & Business Media. This book was released on 2011-03-30 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Voltage Power MOSFETs focuses on the design of low voltage power MOSFETs and the relation between the device structure and the performance of a power MOSFET used as a switch in power management applications. This SpringerBriefs close the gap between detailed engineering reference books and the numerous technical papers on the subject of power MOSFETs. The material presented covers low voltage applications extending from battery operated portable electronics, through point of load converters, internet infrastructure, automotive applications, to personal computers and server computers. The issues treated in this volume are explained qualitatively using schematic illustrations, making the discussion easy to follow for all prospective readers.

Book MOSFET Modeling for Circuit Analysis and Design

Download or read book MOSFET Modeling for Circuit Analysis and Design written by Carlos Galup-Montoro and published by World Scientific. This book was released on 2007 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

Book MOS Devices for Low Voltage and Low Energy Applications

Download or read book MOS Devices for Low Voltage and Low Energy Applications written by Yasuhisa Omura and published by John Wiley & Sons. This book was released on 2016-12-22 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications Based on timely published and unpublished work written by expert authors Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses Describes the physical effects (quantum, tunneling) of MOS devices Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities. Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants." —Natural Resources Defense Council, USA, Feb. 2015 All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book “MOS Devices for Low-Voltage and Low-Energy Applications” explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well. "The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow." —Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC) "The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this." —Prof. Joao A. Martino, University of Sao Paulo, Brazil

Book Low Power Design for Deep Submicron Technology

Download or read book Low Power Design for Deep Submicron Technology written by Nurhusen Beshir and published by . This book was released on 2008 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Advanced Nanoscale MOSFET Architectures

Download or read book Advanced Nanoscale MOSFET Architectures written by Kalyan Biswas and published by John Wiley & Sons. This book was released on 2024-05-29 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.

Book Characterization Methods for Submicron MOSFETs

Download or read book Characterization Methods for Submicron MOSFETs written by Hisham Haddara and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.

Book Analysis and Design of MOSFETs

Download or read book Analysis and Design of MOSFETs written by Juin Jei Liou and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

Book Mosfet Modeling for VLSI Simulation

Download or read book Mosfet Modeling for VLSI Simulation written by Narain Arora and published by World Scientific. This book was released on 2007 with total page 633 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

Book Advanced Power MOSFET Concepts

Download or read book Advanced Power MOSFET Concepts written by B. Jayant Baliga and published by Springer Science & Business Media. This book was released on 2010-06-26 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.

Book ISIM

    ISIM

    Book Details:
  • Author : Dae-Hyung Cho
  • Publisher :
  • Release : 1995
  • ISBN :
  • Pages : 376 pages

Download or read book ISIM written by Dae-Hyung Cho and published by . This book was released on 1995 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of the research presented in this thesis is to remove various shortcomings in existing short-channel MOSFET models and to extend the scope and applicability of the deep-submicron MOSFET model down to the future 0.1 $mu$m Si technology. As the device dimensions shrink and the scale of integration grows considerably, a more accurate, physical, and efficient model has been in strong demand to account for the device characteristics in the circuit simulation. In particular, since the design trend for ULSI circuits and systems has been moving toward mixed analog-digital low power chips, the modeling strategy has been changed to accurately model the weak and moderate inversion regions with a single equation model and with a continuous and smooth characteristics near all the device-operation boundaries. Furthermore, the charge (capacitance) modeling has become significantly important, while very little attention has been paid to the C-V characteristics for over 20 years. iSIM (illinois Short-Channel IGFET Model) is a new physical model developed with emphasis on deep-submicron technology effects such as the nonuniform substrate doping, mobility reduction due to several scattering mechanisms, carrier velocity saturation, drain-induced barrier lowering, channel-length modulation, lightly doped drain device, and source-to-drain series resistance. For analog circuit applications, not only the weak and moderate inversion characteristics, but also small-signal AC capacitances have been modeled accurately with a single equation for both DC and AC models in iSIM. Comparisons of iSIM results with measured I-V characteristics of state-of-the-art MOS transistors from industry show an excellent fit for both long channels and short channels down to about a quarter micron. For an ultrasmall device below 0.25 $mu$m, the nonlocal stationary carrier transport effect becomes significantly important. The effect results in increased current-driving capability over what is expected for stationary carrier transport theory. The accurate and compact model presented in this thesis includes the nonlocal stationary carrier transport effect and is a first model which can accurately predict the characteristics of an ultrasmall device below 0.25 $mu$m. The model is computationally inexpensive and predictive and enables designers to obtain quick and accurate estimates of the performances of their future generation technology. iSIM has been implemented in SPICE3 and tested with many benchmark circuits. In all benchmark tests, iSIM shows an excellent convergence characteristic due to the continuous and smooth characteristics of our model equation.

Book Statistical Modeling of MOSFETs and Interconnects for Deep submicron Technologies

Download or read book Statistical Modeling of MOSFETs and Interconnects for Deep submicron Technologies written by James Chieh-Tsung Chen and published by . This book was released on 1998 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Modeling Mosfet Gain Compression and Quasi sat Behavior

Download or read book Modeling Mosfet Gain Compression and Quasi sat Behavior written by Mike Peralta and published by Createspace Independent Publishing Platform. This book was released on 2018-09-09 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gain compression is a reduction in incremental gain caused by nonlinearity of the transfer function of the amplifying device. Gain compression of gain is caused by non-linear characteristics of the device when run at large amplitudes. As the input level is increased beyond the linear range of the amplifier, gain compression may occur depending on the characteristics of the device. This nonlinearity may be caused by heat due to power dissipation or by overdriving the active device beyond its linear region. It is a large-signal phenomenon of circuits. This may also cause harmonic distortion from the device. To model this non-linear behavior, a VBE multiplier (Q1,etc.) and Zener (D2), (see Figure 3) are used to mimic the non-linear behavior of the device near where ID shows a maximum. To model the quasi-sat behavior from the lightly doped drain variable resistance, a polynomial voltage controlled modeling circuit (E1) is used to mimic this non-linear aspect of the device. The gain compression and quai-sat behavior of lightly doped drain MOSFETs can be modeled by using the full gain compression circuit shown in Figure 3. This can be very valuable to accurately simulate the current-voltage behavior of lightly doped drains in high voltage/power MOSFETs. Both the gain compression (gm fall-off) and quasi-sat (variable effective drain resistance) behavior can be accurately modeled and simulated by the subcircuit model shown in Figure 3. By proper setting of the various circuit elements and their model parameters very accurate current-voltage behavior of lightly doped drain MOSFETs can be simulated to obtain accurate gate-source and gate-drain capacitances.