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Book Investigation and Fabrication of AlGaN GaN Metal oxide semiconductor High electron Mobility Transistors with Surface Treatment and the I ZnO Gate Dielectric Layer

Download or read book Investigation and Fabrication of AlGaN GaN Metal oxide semiconductor High electron Mobility Transistors with Surface Treatment and the I ZnO Gate Dielectric Layer written by 邱雅蘭 and published by . This book was released on 2011 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Handbook for III V High Electron Mobility Transistor Technologies

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Book Fabrication and Characterization of AlGaN GaN Metal Insulator Semiconductor High Electron Mobility Transistors for High Power Applications

Download or read book Fabrication and Characterization of AlGaN GaN Metal Insulator Semiconductor High Electron Mobility Transistors for High Power Applications written by Anthony Calzolaro and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Analysis and Optimization of AlGaN GaN High Electron Mobility Transistors for Microwave Applications

Download or read book Analysis and Optimization of AlGaN GaN High Electron Mobility Transistors for Microwave Applications written by Michael Hosch and published by Cuvillier Verlag. This book was released on 2011-08-08 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.

Book Fabrication and Investigation of AlGaN GaN Metal oxide semiconductor High electron Mobility Field effect Transistors with Gate Insulators Grown Using PEC Oxidation Method

Download or read book Fabrication and Investigation of AlGaN GaN Metal oxide semiconductor High electron Mobility Field effect Transistors with Gate Insulators Grown Using PEC Oxidation Method written by 黃立賢 and published by . This book was released on 2009 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Electrical and Electronic Devices Circuits and Materials

Download or read book Electrical and Electronic Devices Circuits and Materials written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.

Book GaN Transistor Modeling for RF and Power Electronics

Download or read book GaN Transistor Modeling for RF and Power Electronics written by Yogesh Singh Chauhan and published by Elsevier. This book was released on 2024-05-31 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. This book provides an overview of the operation and physics of GaN-based transistors All aspects of the ASM-HEMT model for GaN circuits, an industry standard model, are described in depth by the developers of the model Parameter extraction of GaN devices and measurement data requirements for GaN model extraction are detailed

Book Modeling of AlGaN GaN High Electron Mobility Transistors

Download or read book Modeling of AlGaN GaN High Electron Mobility Transistors written by D. Nirmal and published by Springer. This book was released on 2025-02-11 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.

Book Critical Process Development and Characteristics Analysis of Power and RF AlGaN GaN Metal Insulator Semiconductor High Electron Mobility Transistors

Download or read book Critical Process Development and Characteristics Analysis of Power and RF AlGaN GaN Metal Insulator Semiconductor High Electron Mobility Transistors written by and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Enhancement Mode AlGaN GaN Metal Oxide Semiconductor High Electron Mobility Transistors Using Self Aligned Gate Recessed Process

Download or read book Enhancement Mode AlGaN GaN Metal Oxide Semiconductor High Electron Mobility Transistors Using Self Aligned Gate Recessed Process written by 徐健軒 and published by . This book was released on 2014 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt: