Download or read book Design and Fabrication of 4H Silicon Carbide Power Bipolar Junction Transistors written by Jianhui Zhang and published by . This book was released on 2006 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: 4H silicon carbide (4H-SiC) bipolar junction transistor (BJT) is a very promising wide band gap semiconductor switching device for high temperature and high power applications. The superior material properties of 4H-SiC, including wide band gap, high breakdown electric field, high thermal conductivity make 4H-SiC ideal for power electronics applications. 4H-SiC power BJT is an intrinsically normally-off switching device, has higher current handling capabilities due to its bipolar character, and is free of the gate oxide problems as in 4H-SiC metal-oxide-semiconductor field effect transistor (MOSFET). Moreover, 4H-SiC BJT easily surpasses silicon BJT with higher current gain, much larger safe-operating-area (SOA) and free of thermal breakdown problem. 4H-SiC power BJT has been gaining more and more attentions since it was first reported in 2000.
Download or read book Design and Simulation of 4H Silicon Carbide Power Bipolar Junction Transistors written by Xinyue Niu and published by . This book was released on 2010 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors written by Hyung-Seok Lee and published by . This book was released on 2008 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Development of 4H Silicon Carbide JFET based Power Integrated Circuits written by Yongxi Zhang and published by . This book was released on 2008 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: 4H-Silicon Carbide (4H-SiC) is a promising semiconductor for the next generation of high power, high frequency, and high temperature applications. Significant progresses have been made on SiC technologies since 1990's. Superior device performance demonstrated by SiC discrete power devices is leading to the commercialization of SiC diodes and transistors targeting mid and high power level applications. As compared to the vertical power devices, the lateral device technology promises to fulfill the monolithic integration of both power devices and control circuits. SiC power integrated circuits (PICs) share similar advantages as Si PICs while providing a much higher power handling capability at higher frequency. In addition, SiC power junction field transistor (JFET) is promising for high temperature, reliable operation without suffering from the reliability problems faced by metal-oxide-semiconductor junction field transistors (MOSFETs) and bipolar junction transistors (BJTs). Therefore, the lateral JFET technology is investigated under this research. This thesis describes design, fabrication, characterization, and further optimization and analysis of a novel vertical channel lateral JFET (VC-LJFET) technology in 4H-SiC and the demonstration of the world's first SiC power Integrated circuit. A double reduced surface electric field (RESURF) structure is applied to achieve higher voltage and lower on-resistance for the power lateral JFET (LJFET). A 4-stage buffer circuit based on the resistive-load n-type JFET inverter is designed and integrated with the power LJFET to form a monolithic power integrated circuit. Important fabrication procedures are presented. The fabricated power LJFET demonstrates a blocking voltage of 1028 V and a specific on-resistance of 9.1 m[ohm]; cm2, resulting in a record-high VBR2/RON, SP figure-of-merit (FOM) of 116 MW/cm2 for lateral power devices. The optimized RESURF structure demonstrates blocking capability of 120 V/[micro]m in 4H-SiC. The temperature dependences of important device parameters, such as threshold voltage, transconductance, and electron mobility, are also discussed. Based on the technology, the integration of a high performance lateral power JFET with buffer circuits has been demonstrated for the first time. The SiC LJFET power IC chips demonstrate a record high power level at frequencies up to a few MHz. An on-chip temperature sensing diode is implemented to monitor the chip junction temperature. The rise time and fall time around 20 ns for the SiC power LJFET are observed and remains unchanged even at a junction temperature as high as 250 oC when driven by a Si MOS gate driver. The demonstration of SiC power integration technology points to the robust integrated power electronics applications in the harsh environment and boosts the power level of single-chip power electronic system from 100 W to 1000 W.
Download or read book Design and Fabrication of Gallium Nitride silicon Carbide Heterojunction Bipolar Transistors written by Hong Wu and published by . This book was released on 2003 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design and Fabrication of 4H Silicon Carbide Gate Turn off Thyristors written by Lei Lin and published by . This book was released on 2013 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide Volume 2 written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-20 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Download or read book 4h Sic Schottky Barrier Diodes and Junction Field Effect Transistors written by Denis Perrone and published by LAP Lambert Academic Publishing. This book was released on 2010-07 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si - based counterpart. In particular, SiC - based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on - axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs.
Download or read book Fabrication and Modeling of Silicon Carbide Bipolar Junction Transistors written by Bruce Robert Geil and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Fabrication and Characterization of 4H Silicon Carbide Rectifiers for Power Switching Applications written by David C. Sheridan and published by . This book was released on 2001 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Demonstration of Silicon Carbide Power Devices in Practical Power Conversion Systems written by and published by . This book was released on 2005 with total page 46 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goals of this project are: (1) to develop a design and processing sequence for high-power 4H-SiC bipolar junction transistors (BJTs) with blocking voltages above 1,000 V and on-state currents above 25 A; (2) to fabricate and package sufficient quantities of these devices to implement a demonstration motor control system; (3) to design and develop a prototype 40-100 kW motor control system for demonstrating the SiC BJTs; and (4) to operate the SiC BJTs in the prototype system as a real-world test of the feasibility of this technology for practical power conversion systems.
Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by . This book was released on 2004 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Download or read book More than Moore Devices and Integration for Semiconductors written by Francesca Iacopi and published by Springer Nature. This book was released on 2023-02-17 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems with a broad range of functionalities that can be added to 3D microsystems, including flexible electronics, metasurfaces and power sources. The book also includes examples of applications for brain-computer interfaces and event-driven imaging systems. Provides a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems; Covers functionalities to add to 3D microsystems, including flexible electronics, metasurfaces and power sources; Includes current applications, such as brain-computer interfaces, event - driven imaging and edge computing.
Download or read book Silicon Carbide and Related Materials 2005 written by Robert P. Devaty and published by . This book was released on 2006 with total page 878 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.
