Download or read book The Deposition of Pure Boron written by and published by . This book was released on 1947 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Deposition of Pure Boron written by and published by . This book was released on 1947 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Deposition of Pure Boron written by Hermann Irving Schlesinger and published by . This book was released on 1947 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Temperature Pure Boron Layer Deposition for Silicon Diode and Micromachining Applications written by Xingyu Liu and published by . This book was released on 2021 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Deposition of Boron from the Hydrides of Boron and from Boron Tribromide written by Robert Lewis Brandaur and published by . This book was released on 1938 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Preparation of Thin Boron Films written by R. W. Dodson and published by . This book was released on 1944 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Preparing Boron by Fused salt Electrolysis written by D. Z. Hobbs and published by . This book was released on 1961 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Deposition by Electron Bombardment and Weighing Under Vacuum of Thin High Purity Boron Layers written by J. van Audenhove and published by . This book was released on 1964 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical vapour deposition of boron carbon thin films from organoboron precursors written by Maiwulidan (Mewlude) Yimamu (Imam) and published by Linköping University Electronic Press. This book was released on 2016-01-13 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt: Boron-carbon (BxC) thin films enriched in 10B are potential neutron converting layers for 10Bbased solid-state neutron detectors given the good neutron absorption cross-section of 10B atoms in the thin film. Chemical Vapour Deposition (CVD) of such films faces the challenge that the maximum temperature tolerated by the aluminium substrate is 660 °C and low temperature CVD routes for BxC films are thus needed. This thesis presents the use of two different organoboron precursors, triethylboron –B(C2H5)3 (TEB) and trimethylboron – B(CH3)3 (TMB) as single-source precursors for CVD of BxC thin films. The CVD behaviour of TEB in thermal CVD has been studied by both BxC thin film deposition and quantum chemical calculations of the gas phase chemistry at the corresponding CVD conditions. The calculations predict that the gas phase reactions are dominated by ?-hydride eliminations of C2H4 to yield BH3. In addition, a complementary bimolecular reaction path based on H2-assisted C2H6 elimination to BH3 is also present at lower temperatures in the presence of hydrogen molecules. A temperature window of 600 – 1000 °C for deposition of X-ray amorphous BxC films with 2.5 ? x ? 4.5 is identified showing good film density (2.40 – 2.65 g/cm3) which is close to the bulk density of crystalline B4C, 2.52 g/cm3 and high hardness (29 – 39 GPa). The impurity level of H is lowered to < 1 at. % within the temperature window. Plasma chemical vapour deposition has been studied using TMB as single-source precursor in Ar plasma for investigating BxC thin film deposition at lower temperature than allowed by thermal CVD and further understanding of thin film deposition process. The effect of plasma power, total pressure, TMB and Ar gas flow on film composition and morphology are investigated. The highest B/C ratio of 1.9 is obtained at highest plasma power of 2400 W and TMB flow of 7 sccm. The H content in the films seems constant at 15±5 at. %. The B-C bond is dominant in the films with small amount of C-C and B-O bonds, which are likely due to the formation of amorphous carbon and surface oxidation, respectively. The film density is determined as 2.16±0.01 g/cm3 and the internal compressive stresses are measured to be <400 MPa.

Download or read book Deposition of Boron Carbide Thin Films by Supersonic Plasma Jet Chemical Vapor Deposition written by Olivier Postel and published by . This book was released on 1998 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Boron Deposition from Fused Salts Final Report written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A partial evaluation of the feasibility of a process to electrodeposit pure coherent coatings of elemental boron from molten fluorides has been performed. The deposit produced was powdery and acicular, unless the fluoride melt was purified to have very low oxygen concentration. When the oxygen activity was reduced in the melt by addition of crystalline elemental boron, dense, amorphous boron deposit was produced. The boron deposits produced had cracks but were otherwise pure and dense and ranged up to 0.35 mm thick. Information derived during this project suggests that similar deposits might be obtained crack-free up to 1.00 mm thick by process modifications and improvements.

Download or read book Chemical Vapour Deposition of sp2 Hybridised Boron Nitride written by Mikhail Chubarov and published by Linköping University Electronic Press. This book was released on 2014-12-04 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this work was to develop a chemical vapour deposition process and understand the growth of sp2 hybridised Boron Nitride (sp2-BN). Thus, the growth on different substrates together with the variation of growth parameters was investigated in details and is presented in the papers included in this thesis. Deposited films of sp2-BN were characterised with the purpose to determine optimal deposition process parameters for the growth of high crystal quality thin films with further investigations of chemical composition, morphology and other properties important for the implementation of this material towards electronic, optoelectronic devices and devices based on graphene/BN heterostructures. For the growth of sp2-BN triethyl boron and ammonia were employed as B and N precursors, respectively. Pure H2 as carrier gas is found to be necessary for the growth of crystalline sp2-BN. Addition of small amount of silane to the gas mixture improves the crystalline quality of the growing sp2-BN film. It was observed that for the growth of crystalline sp2-BN on c-axis oriented ?-Al2O3 a thin and strained AlN buffer layer is needed to support epitaxial growth of sp2-BN, while it was possible to deposit rhombohedral BN (r-BN) on various polytypes of SiC without the need for a buffer layer. The growth temperature suitable for the growth of crystalline sp2-BN is 1500 °C. Nevertheless, the growth of crystalline sp2-BN was also observed on ?-Al2O3 with an AlN buffer layer at a lower temperature of 1200 °C. Growth at this low temperature was found to be hardly controllable due to the low amount of Si that is necessary at this temperature and its accumulation in the reaction cell. When SiC was used as a substrate at the growth temperature of 1200 °C, no crystalline sp2-BN was formed, according to X-ray diffraction. Crystalline structure investigations of the deposited films showed formation of twinned r-BN on both substrates used. Additionally, it was found that the growth on ?-Al2O3 with an AlN buffer layer starts with the formation of hexagonal BN (h-BN) for a thickness of around 4 nm. The formation of h-BN was observed at growth temperatures of 1200 °C and 1500 °C on ?-Al2O3 with AlN buffer layer while there were no traces of h-BN found in the films deposited on SiC substrates in the temperature range between 1200 °C and 1700 °C. As an explanation for such growth behaviour, reproduction of the substrate crystal stacking is suggested. Nucleation and growth mechanism are investigated and presented in the papers included in this thesis.

Download or read book Boron and Boron Carbide by Vapor Deposition written by James G. Donaldson and published by . This book was released on 1968 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Abstracts of Declassified Documents written by U.S. Atomic Energy Commission and published by . This book was released on 1947 with total page 820 pages. Available in PDF, EPUB and Kindle. Book excerpt: Consists of AECD 1-2023 (no. 1-1779 called MDDC).

Download or read book Cubic Boron Nitride Film Deposition and Process Diagnostics in a Supersonic Plasma Jet Chemical Vapor Deposition System with Substrate Bias written by Jami Lyn McLaren and published by . This book was released on 2006 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Vapor Deposition written by S Neralla and published by BoD – Books on Demand. This book was released on 2016-08-31 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an overview of chemical vapor deposition (CVD) methods and recent advances in developing novel materials for application in various fields. CVD has now evolved into the most widely used technique for growth of thin films in electronics industry. Several books on CVD methods have emerged in the past, and thus the scope of this book goes beyond providing fundamentals of the CVD process. Some of the chapters included highlight current limitations in the CVD methods and offer alternatives in developing coatings through overcoming these limitations.

Download or read book DEPOSITION BY ELECTRON BOMBARDMENT AND WEIGHING UNDER VACUUM OF THIN HIGH PURITY BORON LAYERS written by and published by . This book was released on 1964 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: