Download or read book Demonstration of Silicon Carbide Power Devices in Practical Power Conversion Systems written by and published by . This book was released on 2005 with total page 46 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goals of this project are: (1) to develop a design and processing sequence for high-power 4H-SiC bipolar junction transistors (BJTs) with blocking voltages above 1,000 V and on-state currents above 25 A; (2) to fabricate and package sufficient quantities of these devices to implement a demonstration motor control system; (3) to design and develop a prototype 40-100 kW motor control system for demonstrating the SiC BJTs; and (4) to operate the SiC BJTs in the prototype system as a real-world test of the feasibility of this technology for practical power conversion systems.
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book SiC Technology written by Maurizio Di Paolo Emilio and published by Springer Nature. This book was released on with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Efficiency Power Supply Using New SiC Devices written by Ashot Melkonyan and published by kassel university press GmbH. This book was released on 2007 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book System Impact of Silicon Carbide Power Electronics on Hybrid Electric Vehicle Applications written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The emergence of silicon carbide- (SiC- ) based power semiconductor switches with their superior features compared with silicon (Si) based switches has resulted in substantial improvements in the performance of power electronics converter systems. These systems with SiC power devices are more compact, lighter, and more efficient, so they are ideal for high-voltage power electronics applications including hybrid electric vehicle (HEV) power converters. In this dissertation, first, a power supply converter and a traction drive converter of an HEV are selected and then, the impact of SiC-based power devices on these converters is investigated. Reductions in heatsink size and device losses with the increase in the efficiency are analyzed using an averaging model of a three-phase PWM inverter in the traction drive. In addition to these, the reductions in the filter and transformer size for the power supply are also included. For more accurate results, experimental data, and/or device physics are taken into consideration to model power diodes and MPSFETs. Finally, suggestions of parameter modification to design better perrforming application specific power devices are made after a parametric study of the devices.
Download or read book Power Devices for Efficient Energy Conversion written by Gourab Majumdar and published by CRC Press. This book was released on 2018-04-17 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth of power electronics, centering on inverters and converters as its key system topology, has accelerated recently due to the demand for efficient power conversion. This growth has also been backed up by several evolutionary changes and breakthroughs achieved in the areas of power semiconductor device physics, process technology, and design. However, as power semiconductor technology remains a highly specialized subject, the literature on further research, development, and design in related fields is not adequate. With this in view, two specialists of power semiconductors, well known for their research and contributions to the field, compiled this book as a review volume focusing on power chip and module technologies. The prime purpose is to help researchers, academia, and engineers, engaged in areas related to power devices and power electronics, better understand the evolutionary growth of major power device components, their operating principles, design aspects, application features, and trends. The book is filled with unique topics related to power semiconductors, including tips on state-of-the-art and futuristic-oriented applications. Numerous diagrams, illustrations, and graphics are included to adequately support the content and to make the book extremely attractive as a practical and user-friendly reference book for researchers, technologists, and engineers, as well as a textbook for advanced graduate-level and postgraduate students.
Download or read book Ultra Capacitors in Power Conversion Systems written by Petar J. Grbovic and published by John Wiley & Sons. This book was released on 2013-10-23 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-capacitors, used as short-term energy storage devices, are growing in popularity especially in the transportation and renewable energy sectors. This text provides an up-to-date and comprehensive analysis of ultra-capacitor theory, modeling and module design from an application perspective, focusing on the practical aspects of power conversion and ultra-capacitor integration with power electronics systems. Key features: clearly explains the theoretical and practical aspects of ultra-capacitor, analysis, modelling and design describes different power conversion applications such as variable speed drives, renewable energy systems, traction, power quality, diesel electric hybrid applications provides detailed guidelines for the design and selection of ultra-capacitor modules and interface dc-dc converters includes end-of-chapter exercises and design examples This is an essential reference for power electronics engineers and professionals wanting to expand their knowledge of advanced ultra-capacitor energy storage devices and their application in power conversion. It is also a valuable resource for industrial design engineers as well as academics and advanced students in power electronics who want to develop their understanding about this highly topical subject.
Download or read book Silicon Carbide Volume 2 written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Download or read book Soft Switching Technology for Three phase Power Electronics Converters written by Dehong Xu and published by John Wiley & Sons. This book was released on 2021-12-29 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: Soft-Switching Technology for Three-phase Power Electronics Converters Discover foundational and advanced topics in soft-switching technology, including ZVS three-phase conversion In Soft-Switching Technology for Three-phase Power Electronics Converters, an expert team of researchers delivers a comprehensive exploration of soft-switching three-phase converters for applications including renewable energy and distribution power systems, AC power sources, UPS, motor drives, battery chargers, and more. The authors begin with an introduction to the fundamentals of the technology, providing the basic knowledge necessary for readers to understand the following articles. The book goes on to discuss three-phase rectifiers and three-phase grid inverters. It offers prototypes and experiments of each type of technology. Finally, the authors describe the impact of silicon carbide devices on soft-switching three-phase converters, studying the improvement in efficiency and power density created via the introduction of silicon carbide devices. Throughout, the authors put a special focus on a family of zero-voltage switching (ZVS) three-phase converters and related pulse width modulation (PWM) schemes. The book also includes: A thorough introduction to soft-switching techniques, including the classification of soft-switching for three phase converter topologies, soft-switching types and a generic soft-switching pulse-width-modulation known as Edge-Aligned PWM A comprehensive exploration of classical soft-switching three-phase converters, including the switching of power semiconductor devices and DC and AC side resonance Practical discussions of ZVS space vector modulation for three-phase converters, including the three-phase converter commutation process In-depth examinations of three-phase rectifiers with compound active clamping circuits Perfect for researchers, scientists, professional engineers, and undergraduate and graduate students studying or working in power electronics, Soft-Switching Technology for Three-phase Power Electronics Converters is also a must-read resource for research and development engineers involved with the design and development of power electronics.
Download or read book Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Download or read book Modern Silicon Carbide Power Devices written by B Jayant Baliga and published by . This book was released on 2023-09-18 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.
Download or read book Sic Materials And Devices Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Download or read book Characterization of Wide Bandgap Power Semiconductor Devices written by Fei Wang and published by Institution of Engineering and Technology. This book was released on 2018-09-05 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.
Download or read book SiC Power Module Design written by Alberto Castellazzi and published by IET. This book was released on 2021-12-09 with total page 359 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carbide (SiC) MOSFETs and diodes.
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Download or read book Modeling And Electrothermal Simulation Of Sic Power Devices Using Silvaco Atlas written by Bejoy N Pushpakaran and published by World Scientific. This book was released on 2019-03-22 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.Related Link(s)
