Download or read book Defect Generation Mechanisms in MOCVD Grown Gallium Arsenide Heteroepitaxial Layers on Silicon Substrates written by Thomas George and published by . This book was released on 1989 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers written by Susan C. Palmateer and published by . This book was released on 1985 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Download or read book Heteroepitaxy on Silicon Volume 116 written by H. K. Choi and published by Mrs Proceedings. This book was released on 1988 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1990 with total page 774 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Selective Area Epitaxy of Gallium Arsenide on Silicon Phase 1 written by and published by . This book was released on 1989 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research program was to investigate selective-area epitaxy of Gallium Arsenide-on-Silicon by Metal Organic Chemical Vapor Deposition (MOCVD) as a means of reducing the thermal expansion mismatch effects, hence, improving the deposited film quality, wafer bow, and eliminating film cracking. This has been achieved by MOCVD of GaAs through openings patterned in the silicon dioxide coated wafers. The object of this research program was to develop the technology that will yield device quality GaAs-on-Si and a process applicable for monolithic integration of the high speed and/or optical communication capabilities of GaAs with the sophistication of the Si VLSI technology. The feasibility of this approach has been clearly demonstrated in the Phase I research effort, in which successful selective deposition of GaAs films on patterned Si wafers was achieved and the deposited films were characterized by a number of techniques. Preliminary results clearly indicate the effectiveness of this approach to eliminate wafer bow, minimize film cracking, and improve the quality of the heteroepitaxial films. A new deposition technique for GaAs-on-Si by Atomic Layer Epitaxy (ALE) has been introduced which has the potential of producing superior quality GaAs-on-Si films. Keyword: Semiconductors.
Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 1010 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defect Control in Semiconductors written by K. Sumino and published by Elsevier. This book was released on 2012-12-02 with total page 817 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
Download or read book Infrared Detectors and Focal Plane Arrays written by and published by . This book was released on 1998 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effects of Rapid Thermal Annealing on Gallium Arsenide Grown by MOCVD on Silicon Substrates written by LeNore Louise Lehman and published by . This book was released on 1988 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Substrate Engineering for Defect Reduction and Microsctructure Control in the Growth of Indium Arsenide on 100 Gallium Arsenide written by Suryanarayanan Ganesan and published by . This book was released on 2006 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Comparison of Epitaxial Layers and Undoped Semi insulating Substrates for Use in Silicon Implantation Into Gallium Arsenide written by Alison Schary and published by . This book was released on 1988 with total page 654 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1989 with total page 1148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 1988 with total page 1290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
