Download or read book Defect Engineering in Semiconductor Growth Processing and Device Technology written by S. Ashok and published by . This book was released on 1992 with total page 1176 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the San Francisco meeting of April-May 1992. Papers emphasize deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. Topics include: defects in bulk crystals, and in thin films; defect characterization; hydrogen interaction; processing induction of defects; quantum wells; ion implantation. Annotation copyright by Book News, Inc., Portland, OR

Download or read book Proceedings of the Third International Symposium on Defects in Silicon written by Takao Abe and published by The Electrochemical Society. This book was released on 1999 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gettering and Defect Engineering in Semiconductor Technology written by H. Richter and published by . This book was released on 2004 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors

Download or read book Proceedings of the Eleventh International Symposium on Plasma Processing written by Electrochemical Society. Dielectric Science and Technology Division and published by The Electrochemical Society. This book was released on 1996 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Fourth International Symposium on High Purity Silicon written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1996 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gettering and Defect Engineering in Semiconductor Technology IX written by Vito Raineri and published by Trans Tech Publications Ltd. This book was released on 2001-11-30 with total page 809 pages. Available in PDF, EPUB and Kindle. Book excerpt: GADEST 2001 Proceedings of the 9th Int. Conference on Gettering anf Defect Engineering in Semiconductor Technology , S. Tecla, Italy

Download or read book Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices written by Dieter K. Schroder and published by The Electrochemical Society. This book was released on 1994 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Fifth International Symposium on High Purity Silicon written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1998 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Symposium on Crystalline Defects and Contamination Their Impact and Control in Device Manufacturing II written by Bernd O. Kolbesen (Chemiker.) and published by . This book was released on 1997 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defect and Impurity Engineered Semiconductors and Devices written by and published by . This book was released on 2002 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Crystalline Silicon written by Robert Hull and published by IET. This book was released on 1999 with total page 1054 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.

Download or read book Predictive Simulation of Semiconductor Processing written by Jarek Dabrowski and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.

Download or read book Semiconductor Silicon 2002 written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2002 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defect Recognition and Image Processing in Semiconductors and Devices Proceedings of the 5th INT Conference 6 10 September 1993 Santander Spain written by Juan Jiménez and published by CRC Press. This book was released on 1994-05-26 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fifth in this series of conferences was held in Santander, Spain from 6 to 10 September 1993, and was attended by workers from industry and research institutes worldwide. Device yield is a crucial factor for determining the choice of semiconducting material made by manufacturers, and that choice is based upon a knowledge of how defects might affect a particular substrate, epilayer or base material. The DRIP conference series was instigated to address the mapping of these technologically important defects. Topics covered at the meeting included silicon, and compound semiconductor substrates and epilayers. Methods for defect recognition included tunelling microscopy, inelastic light scattering (Raman), elastic light scattering, photoluminescence mapping, defect characterization, optical probe beams, and effects of defects on devices. The meeting focused in particular on the microscopic nature of as-grown defects: their distribution as a function of growth conditions, and their redistribution under subsequent heat treatments. The conference dealt with the increasing number and sophistication of visualization techniques which map physical properties of defects, and which may in future permit better control of defect engineering. Researchers in solid state or device physics, or electrical engineering will find this volume an invaluable, up to date reference on the latest techniques for the identification of defects, developments in their control, implications for device fabrication, and future directions for the analysis and mapping of semiconductors.

Download or read book Silicon Materials Science and Technology written by and published by . This book was released on 1998 with total page 894 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defect and Impurity Engineered Semiconductors and Devices III Volume 719 written by S. Ashok and published by . This book was released on 2002-08-09 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.