Download or read book Defect Characterization After Si and C Implantation in 4H SiC written by and published by . This book was released on 2011 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Characterization of Process induced Defects in 4H SiC written by Shandirai Malven Tunhuma and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide has become an important material in the implementation of next generation photonics. It harbors the silicon vacancy (VSi) which can be transformed to a carbon antisite-vacancy pair (CSiVC) defect through thermal treatment. This defect has quantum functionality and can be used as a single photon source at room temperature. Using defect engineering, this technology is set to surpass advances made in other similar systems because it is being developed on existing standard industrial practices, fabrication protocols and mechanisms. These include techniques such as irradiation, annealing and ion implantation. The motivation of this work was to establish sound device fabrication protocols to be used in the device implementation. In this thesis DLTS and Laplace DLTS have been used to characterize deep level defects induced by various processes in 4H-SiC. Schottky barrier diodes were used to create the space charge region required to probe the defect characteristics using capacitance DLTS. From the DLTS and Laplace DLTS the activation energies of the defects were accurately deduced and the apparent capture cross section was calculated. The defect concentration was also quanti ed in the form of depth pro les plotted from the metal-semiconductor interface of the Schottky barrier diodes into the bandgap of the semiconductor. SEM, AFM and XRD were used to probe the changes in surface morphology and composition accompanying the processing steps whilst Raman spectroscopy was used to probe the nature of induced defects. Sputter deposition of tungsten on 4H-SiC was successfully used to induce the E0:69 which is the VSi. The identity of VSi was con rmed by thermal treatment and it annealed beyond detection at 600 C as expected. A previously unreported defect, the E0:29 was also observed after sputtering and was attributed to the heavy metal and gas ion residue from the deposition process. In order to transform the VSi into CSiVC, W/4H-SiC diodes were annealed up to 1100 C. This resulted in the formation of defects which were attributed to the interdi usion of silicides and carbides formed at the W/4H-SiC interface, as detected by XRD, migrating into the SiC. This was an unfavourable outcome for photonics applications where purity of the semiconductor is a major concern. As an alternative solution, the VSi was induced in 4H-SiC using 167 MeV, Xe26+ swift heavy ions. Xe is a noble gas therefore it would not react with the semiconductor. The structure and integrity of the lattice structure was conserved after irradiation as deduced from confocal Raman microscopy. The depth and concentration of the defects as observed in confocal Raman was consistent with SRIM simulations. AFM showed that the radiation introduced elongated protrusions on the surface of the semiconductor. The observations show that the silicon vacancy can be induced in 4H-SiC by standard industrial practices such as sputter deposition or ion irradiation.
Download or read book Electrical and Optical Characterization of Intrinsic and Ion Implantation Induced Defects in 6H And 4H SiC written by Michael B. Scott and published by . This book was released on 1999-11-01 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Deep level transient spectroscopy (DLTS), Hall effect, and cathodolummescence (CL) measurements are used to characterize the intrinsic and ion-implantation induced defects in high-temperature (475 and 500 deg C) ion- implanted epitaxial n-type 6H- and 4H-SiC, ion-implanted with Cr, Mg, Ar, N, and P atoms. Comparison of room-temperature and high-temperature ion-implanted 6H- SiC:Mg and :Cr indicate the significance of high-temperature ion implantation on the activation of the ion-implanted atoms and damage-recovery of the crystalline lattice. The effects of high-temperature annealing on both damage-recovery and implanted ion activation are detected and analyzed, from 1200 to 1800 degrees C. Trap parameters 0 both damage-related and species-related defects are determined by curve-fitting of DLTS rate window plots, including the identification of a 615 meV silicon-vacancy-substitutional-nitrogen defect. Double-correlated DLTS measurements indicate a one-dimensional distribution of various defects along the implantation axis and slight surface diffusion of ion-implanted magnesium during high-temperature annealing. Current-voltage-temperature measurements of 6H-SiC:Mg :Cr indicate the effect of annealing temperature and ion species on the concentration of near midgap defects. Optimum anneal temperatures are determined for activation of ion-implanted nitrogen and phosphorus. CL measurements indicate the formation of deep radiative centers in 500 degrees C ion-implanted 4H-SiC:P and :N. CL measurements also indicate the presence of a 130 meV higher energy level conduction band minimum.
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Silicon Carbide written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Download or read book Electrical Characterization of Ion Implanted 4H Silicon Carbide written by Christian Morath and published by . This book was released on 1999-03-01 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrical characterization has been performed on ion-implanted p- type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B implanted samples was found to occur at anneal temperatures of ^1650 deg C and ^1550 deg C, respectively. The implantation dose resulting in the highest concentration for Al and B implantation was found to be 3x10(exp 13)/sq cm. An average peak mobility of ^200 sq cm/ V s was found for an Al implanted sample; this is considerably higher than the average peak mobility for the B implanted samples, ^100 sq cm/ V s. No significant gains in activation efficiency or mobility were evident with high temperature implantation compared to the room temperature implantation. Overall, Al implantation of 4H-SiC appears superior with regard to these properties compared to B implantation.
Download or read book Characterization of Defects in 4H SiC Substrate Using Synchrotron White Beam X ray Topography written by Shreyas Krishna and published by . This book was released on 2004 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Silicon Carbide Substrate Defects written by Benjamin D. Poust and published by . This book was released on 2004 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Extended Defects and Their Influence on the Performance of 4H SiC Devices written by Ronen Berechman and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Processing and Characterization of Silicon Carbide 6H and 4H SiC Contacts for High Power and High Temperature Device Applications written by Sang-Kwon Lee and published by . This book was released on 2002 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-25 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Download or read book An Introduction to the Optical Spectroscopy of Inorganic Solids written by Jose Solé and published by John Wiley & Sons. This book was released on 2005-06-10 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical guide to spectroscopy and inorganic materials meets the demand from academia and the science community for an introductory text that introduces the different optical spectroscopic techniques, used in many laboratories, for material characterisation. Treats the most basic aspects to be introduced into the field of optical spectroscopy of inorganic materials, enabling a student to interpret simple optical (absorption, reflectivity, emission and scattering) spectra Contains simple, illustrative examples and solved exercises Covers the theory, instrumentation and applications of spectroscopy for the characterisation of inorganic materials, including lasers, phosphors and optical materials such as photonics This is an ideal beginner’s guide for students with some previous knowledge in quantum mechanics and optics, as well as a reference source for professionals or researchers in materials science, especially the growing field of optical materials.
Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices OCo power switching Schottky diodes and high temperature MESFETs OCo are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Contents: SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PiN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo). Readership: Technologists, scientists, engineers and graduate students working on silicon carbide or other wide band gap materials and devices."
Download or read book Sic Materials And Devices Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
