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Book Defect analysis with atomic resolution microscopy

Download or read book Defect analysis with atomic resolution microscopy written by Gerjan P. van Bakel and published by . This book was released on 1992 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Defect Analysis with Atomic resolution Microscopy

Download or read book Defect Analysis with Atomic resolution Microscopy written by van Bakel (Gerjan P.E.M.) and published by . This book was released on 1992 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Baguette Quartette Collection

Download or read book Baguette Quartette Collection written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Collection contains clipping file.

Book Defect Analysis in Electron Microscopy

Download or read book Defect Analysis in Electron Microscopy written by M. H. Loretto and published by . This book was released on 1975 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Structure Analysis of Defects in Crystals by High Resolution Electron Microscopy

Download or read book Structure Analysis of Defects in Crystals by High Resolution Electron Microscopy written by John Cotter Barry and published by . This book was released on 1982 with total page 792 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Automated Defect Analysis in Electron Microscopy Images

Download or read book Automated Defect Analysis in Electron Microscopy Images written by Wei Li and published by . This book was released on 2018 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Atomic Resolution Microscopy

Download or read book Atomic Resolution Microscopy written by and published by . This book was released on 1993 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Microelectronic Failure Analysis

Download or read book Microelectronic Failure Analysis written by and published by ASM International. This book was released on 2002-01-01 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides new or expanded coverage on the latest techniques for microelectronic failure analysis. The CD-ROM includes the complete content of the book in fully searchable Adobe Acrobat format. Developed by the Electronic Device Failure Analysis Society (EDFAS) Publications Committee

Book Impact of Electron and Scanning Probe Microscopy on Materials Research

Download or read book Impact of Electron and Scanning Probe Microscopy on Materials Research written by David G. Rickerby and published by Springer Science & Business Media. This book was released on 1999-10-31 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a coherent synopsis of a rapidly evolving field. Subjects covered include diffraction contrast and defect analysis by conventional TEM lattice imaging, phase contrast and resolution limits in high resolution electron microscopy. Specialised electron diffraction techniques are also covered, as is the application of parallel electron energy loss spectroscopy and scanning transmission EM for subnanometer analysis. Materials analyzed include thin films, interfaces and non-conventional materials. WDS and EDS are treated, with an emphasis on phi(rhoZeta) techniques for the analysis of thin layers and surface films. Theoretical and practical aspects of ESEM are discussed in relation to applications in crystal growth, biomaterials and polymers. Recent developments in SPM are also described. A comprehensive survey of the state of the art in electron and SPM, future research directions and prospective applications in materials engineering.

Book Quantitative Scanning Transmission Electron Microscopy of Point Defects in Crystals

Download or read book Quantitative Scanning Transmission Electron Microscopy of Point Defects in Crystals written by Jie Feng and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three-dimensional characterization of defects is an essential step in the engineering of point defects to control the type, concentration, and spatial distribution of defects with nanometer-scale resolution to design materials with new functions and properties. High-resolution electron microscopy is becoming a general-purpose tool for characterizing several point defects with single-defect sensitivity and sub-unit cell spatial resolution in all three dimensions. Detectable defects include substitutional impurities, interstitial impurities, self-interstitials, and impurity-containing defect complexes. However, all the defects so far imaged at the single-defect level often increase the local electron scattering by 50% or more, and 3D imaging of defects that change column intensity less than 10%, such as single vacancies was only reported very recently. In the first part of this thesis, we demonstrated an approach for three-dimensional imaging of single vacancies using high precision quantitative high-angle annular dark-field Z-contrast scanning transmission electron microscopy. Vacancies are identified by both the reduction in scattered intensity created by the missing atom and the distortion of the surrounding atom positions. Vacancy positions are determined laterally to a unique lattice site in the image and in depth to within one of two lattice sites by dynamical diffraction effects. 35 single La vacancies are identified in images of a LaMnO3 thin film sample. The vacancies are randomly distributed in depth and correspond to a La vacancy concentration of 0.79%, which is consistent with the level of control of cation stoichiometry within our synthesis process (~1%) and with the equilibrium concentration of La vacancies under the film growth conditions. This method can be extended to detect other defects including impurities and defect clusters and these results represent a step forward in characterizing point defects in materials one at a time, at atomic resolution, matching our current capabilities in materials simulation and our growing control over defect distributions in synthesis. In the second parts of this thesis, I adapted the cut-edge Poisson denoising and machine learning algorithm into the four-dimensional STEM, which could potentially detect point defects that are undetectable by traditional STEM. We demonstrate that the iterative BM4D Poisson denoising algorithm could recover most of the image features corrupted by Poisson noise and increase the PSNR most. We also demonstrate that the convolutional neural network (VGG-16), trained on simulated PACBED data set, could accurately predict TEM sample thickness with> 99% accuracy within 100 nm with 2 nm thickness step.

Book Microelectronic Failure Analysis Desk Reference

Download or read book Microelectronic Failure Analysis Desk Reference written by and published by ASM International. This book was released on 2001-01-01 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: Developed by the Electronic Device Failure Analysis Society (EDFAS) Publications Committee.

Book Characterisation of Radiation Damage by Transmission Electron Microscopy

Download or read book Characterisation of Radiation Damage by Transmission Electron Microscopy written by M.L Jenkins and published by CRC Press. This book was released on 2000-11-21 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization of Radiation Damage by Transmission Electron Microscopy details the electron microscopy methods used to investigate complex and fine-scale microstructures, such as those produced by fast-particle irradiation of metals or ion implantation of semiconductors. The book focuses on the methods used to characterize small point-defect clus

Book Role Microscopy In Semiconductor Failure Analysis

Download or read book Role Microscopy In Semiconductor Failure Analysis written by B. P. Richards and published by CRC Press. This book was released on 1992-06-15 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microscopy is central to the vast majority of semiconductor failure analyses, and is therefore of great importance to engineers concerned with design validation, process optimization, component qualification, testing, and pre- or post-use diagnostics. A wide range of microscopical techniques is available, and each has a unique and complementary role to play in determining the causes of semiconductor failure. The applications of microscopy to semiconductor failure analysis are described in this concise handbook, which provides a valuable practical guide for all those working in the field. The basic principles and operation of each type of microscopy are explained, and each is illustrated with case histories and micrographs of many failure mechanisms. The need for new microscopies for the study of future generation devices is discussed, and several possible candidates for this purpose are assessed.

Book Defects in Microelectronic Materials and Devices

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Book Advanced Computing in Electron Microscopy

Download or read book Advanced Computing in Electron Microscopy written by Earl J. Kirkland and published by Springer Nature. This book was released on 2020-03-09 with total page 357 pages. Available in PDF, EPUB and Kindle. Book excerpt: This updated and revised edition of a classic work provides a summary of methods for numerical computation of high resolution conventional and scanning transmission electron microscope images. At the limits of resolution, image artifacts due to the instrument and the specimen interaction can complicate image interpretation. Image calculations can help the user to interpret and understand high resolution information in recorded electron micrographs. The book contains expanded sections on aberration correction, including a detailed discussion of higher order (multipole) aberrations and their effect on high resolution imaging, new imaging modes such as ABF (annular bright field), and the latest developments in parallel processing using GPUs (graphic processing units), as well as updated references. Beginning and experienced users at the advanced undergraduate or graduate level will find the book to be a unique and essential guide to the theory and methods of computation in electron microscopy.

Book High Resolution Electron Microscopy for Materials Science

Download or read book High Resolution Electron Microscopy for Materials Science written by Daisuke Shindo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-resolution electron microscopy (HREM) has become a most powerful method for investigating the internal structure of materials on an atomic scale of around 0.1 nm. The authors clearly explain both the theory and practice of HREM for materials science. In addition to a fundamental formulation of the imaging process of HREM, there is detailed explanation of image simulationindispensable for interpretation of high-resolution images. Essential information on appropriate imaging conditions for observing lattice images and structure images is presented, and methods for extracting structural information from these observations are clearly shown, including examples in advanced materials. Dislocations, interfaces, and surfaces are dealt with, and materials such as composite ceramics, high-Tc superconductors, and quasicrystals are also considered. Included are sections on the latest instruments and techniques, such as the imaging plate and quantitative HREM.

Book Electron Microscopy and Analysis 1997  Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference  University of Cambridge  2 5 September 1997

Download or read book Electron Microscopy and Analysis 1997 Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference University of Cambridge 2 5 September 1997 written by Rodenburg and published by CRC Press. This book was released on 1997-01-01 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron Microscopy and Analysis 1997 celebrates the centenary anniversary of the discovery of the electron by J.J. Thomson in Cambridge and the fiftieth anniversary of this distinguished Institute group. The book includes papers on the early history of electron microscopy (from P. Hawkes), the development of the scanning electron microscope at Cambridge (from K. Smith), electron energy loss spectroscopy (from L.M. Brown), imaging methods (from J. Spence), and the future of electron microscopy (from C. Humphreys). Covering a wide range of applications of advanced techniques, it discusses electron imaging, electron energy-loss and x-ray analysis, and scanning probe and electron beam microscopies. This volume is a handy reference for professionals using microscopes in all areas of physics, materials science, metallurgy, and surface science to gain an overview of developments in our understanding of materials microstructure and of advances in microscope interrogation techniques.