Download or read book Deep Level Transient Spectroscopy written by John Richard Troxell and published by . This book was released on 1984 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Level Transient Spectroscopy Studies of Radiation Induced Defects in Silicon written by John Richard Troxell and published by . This book was released on 1979 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Level Transient Spectroscopy of Radiation induced Defects and Their Complexes in Silicon written by and published by . This book was released on 1993 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Process and Radiation Induced Defects in Si and Ge Using Conventional Deep Level Transient Spectroscopy DLTS and Laplace DLTS written by Cloud Nyamhere and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors are crucial to device operation, as they can either be beneficial or detrimental to the device operation depending on the application. For efficient devices it is important to characterize the defects in semiconductors so that those defects that are bad are eliminated and those that are useful can be controllably introduced. In this thesis, deep level transient spectroscopy (DLTS) and high-resolution Laplace-DLTS (LDLTS) have been used to characterize deep level defects introduced by energetic particles (electrons or Ar ions) and during metallization using electron beam deposition on silicon and germanium. Schottky diodes were used to form the space-charge region required in DLTS and LDLTS measurements. From the DLTS and LDLTS measurements the activation enthalpy required to ionize a trap, ET, and defect carrier capture cross-section?? were deduced. LDLTS proved particularly useful since it could separate deep levels with closely spaced energy levels (the limit being defects with emission rates separated by a factor greater than 2), which was not possible by conventional DLTS. The majority carrier traps in gallium-, boron- and phosphorus-doped silicon introduced after MeV electron irradiation and during electron beam deposition have been characterized, and several defects such as the divacancy, A-center and E-center and other complex defects were observed after the two processes. Annealing studies have shown that all deep levels are removed in silicon after annealing between 500ʻC-600ʻC. Both electron and hole traps introduced in n-type germanium by electron irradiation, Ar sputtering and after electron beam deposition have been characterized using DLTS and LDLTS. The E-center is the most common defect introduced in germanium after MeV electron irradiation and during electron beam deposition. Annealing shows that defects in germanium were removed by low thermal budget of between 350ʻC - 400ʻC and it has been deduced that the E-center (V-Sb) in germanium anneals by diffusion. The identification of some of the defects was achieved by using defect properties such as defect signature, introduction rates, annealing behavior and annealing mechanisms, and then comparing these properties to theoretical defect models and results from other techniques.
Download or read book Electrical Characterization of Process and Radiation induced Defects in 4H SiC written by Ezekiel Omotoso and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices for operation in aerospace, manufacturing industries, defence and radiation-harsh environments need to be manufactured from materials that are resistant to the frequent damage caused by irradiation and high-temperature environments. Silicon carbide (SiC) is a wide-bandgap semiconductor material that promises to provide solutions to these problems based on its capability to operate under extreme conditions of temperature and radiation. These conditions introduce defects in the materials. Such defects play an important role in determining the properties of devices, albeit beneficial or detrimental. Therefore it is very important to characterize the defects present in as-grown material as well as defects introduced during processing and irradiation. In this research, resistive evaporation (RE) as well as electron-beam deposition was employed for the fabrication of ohmic and Schottky barrier contacts on nitrogen-doped, n-type 4H-SiC substrate. The quality of the Schottky barrier diodes (SBDs) deposited was confirmed by current-voltage (I-V) and capacitance-voltage (C-V) measurements. Deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS were successfully used to characterize the electrically active defects present in the 4H-SiC SBDs before and after bombarding them with high-energy electrons and alpha-particles as well as after exposing the sample to electron beam deposition conditions. I-V and C-V measurements showed that the SBDs deposited by RE were of good quality with an ideality factor close to unity, a low series resistance and low reverse leakage current. After irradiation, the electrical properties deviated significantly based on the irradiation types and fluences. Thermionic emission dominated at high temperatures close to room temperature, while other current transport mechanisms became dominant at lower temperatures. The ideality factor increased and Schottky barrier heights decreased with decreasing temperature.
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Download or read book Proceedings of the Fifth International Symposium on High Purity Silicon written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1998 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992-11 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book C H N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by Newnes. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
Download or read book Physics Of Semiconductors Proceedings Of The 20th International Conference In 3 Volumes written by E M Anastassakis and published by World Scientific. This book was released on 1990-11-29 with total page 2768 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Download or read book Photoconductivity Studies of Radiation induced Defects in Silicon written by Rosa Ting-I. Young and published by . This book was released on 1972 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation induced Deep level Defects in CCD Imaging and Spectroscopy Sensors written by Daniel Wood and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Electron beam Deposition and Related Damage in P Si by Means of Laplace and Conventional Deep level Transient Spectroscopy written by Helga Tariro Danga and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of defects in semiconductors has been on-going for over 50 years. During this time, researchers have been studying the origins and identity of process induced defects, a task which has proved to be very demanding. While defects in silicon, the most widely used semiconductor, have been widely studied, there is more literature on n-type silicon than on p-type silicon. Compared to n-type silicon, p-type silicon is challenging to work with when it comes to making good Schottky diodes. A good rectifying device is essential for the performing of electrical characterisation techniques such as deep-level transient spectroscopy. In spite of this challenge p-silicon cannot be ignored. Many of the electronic devices are a combination of both n- and p-silicon therefore the need to understand the electronic properties of both materials. In this thesis, defects introduced in p-Si by electron beam deposition (EBD) were investigated. In order to understand these defects better, defects introduced by conditions of electron beam deposition (EBD) without metal deposition, were investigated. This process will be referred to as electron beam exposure (EBE). Finally, the defects were compared to defects induced by alpha-particle irradiation. EBD defects, introduced during electron beam deposition (EBD) of titanium (Ti) contacts on p-Si were investigated. The Schottky contacts were annealed within a temperature range of 200aÌ22́Ơ0́−400 oC. Current-voltage (I-V) measurements were conducted to monitor the change in electrical characteristics with every annealing step. Deep-level transient spectroscopy (DLTS) and Laplace-DLTS techniques were employed to identify the defects introduced after EBD and isochronal annealing of the Ti Schottky contacts. DLTS revealed that the main defects introduced during metallisation were hole traps with activation energy of 0.05 eV, 0.23 eV and 0.38 eV. Depth profiles of these defects showed that the formed close to the interface within a depth of 0.4 IÌ2℗ơm. Defects induced by EBE were studied by exposing samples for 50 minutes after which nickel (Ni) Schottky contacts were fabricated using resistive deposition. Only one defect with an activation energy of 0.55 eV was observed. This activation energy is similar to that of the I-defect. DLTS depth profiling revealed that the defect could be detected up to a depth of 0.8IÌ2℗ơm below the junction, which is significantly deeper than EBD defects. Defects induced when p-Si was irradiated by alpha particles from a 5.4 MeV americium (Am) 241 foil radioactive source with a fluence rate of 7AÌ30́4106 cmaÌ2Ë60́92 saÌ2Ë60́91 at room temperature were investigated. After exposure at a fluence of 5.1AÌ30́41010 cmaÌ2Ë60́92, hole traps with the following activation energies were observed: 0.10 eV, identified as a tri-vacancy related defect, 0.33 eV, the interstitial carbon (Ci), 0.52 eV, a B-related defect and 0.16 eV. Low temperature irradiation experiments were also carried out using alpha- particles with the same fluence rate. Measurements were taken between 35 K and 120 K. The defect levels were at 0.10 eV, 0.14 eV and 0.18 eV. These levels were attributed to the boron-substitutional vacancy complex, the mono-vacancy and a vacancy-related defect, respectively. We conclude that EBD and EBE induced more complex defects than those induced by alpha-particle irradiation.
Download or read book Radiation Effects in Silicon Carbide written by A.A. Lebedev and published by Materials Research Forum LLC. This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.
Download or read book Sic Materials And Devices Volume 2 written by Michael S Shur and published by World Scientific. This book was released on 2007-01-19 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.
Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
