Download or read book Damage Formation and Annealing of Ion Implantation in Si written by M. Tamura and published by . This book was released on 1991 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Download or read book Lattice Damage During Ion Implantation of Semiconductors written by and published by . This book was released on 1993 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: The temperature dependence of the lattice damage created during ion implantation of Si, Ge, Si-Ge alloys, and various III-V compounds is reviewed and interpreted in terms of a transition between two different damage formation mechanisms. Implications of this transition for control of damage, annealing, and electrical activation are discussed, particularly in GaAs.
Download or read book Ion Implantation Science and Technology written by J.F. Ziegler and published by Elsevier. This book was released on 2012-12-02 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation Science and Technology: Second Edition, just like the first edition, serves as both an introduction and tutorial to the science, techniques, and machines involved in the subject. The book is divided into two parts - Part 1: Ion Implantation Science and Part 2: Ion Implantation Technology. Part 1 covers topics such as the stopping and range of ions in solids; ion implantation damage in silicon; experimental annealing and activation; and the measurement on ion implantation. Part 2 includes ion optics and focusing on implanter design; photoresist problems and particle contamination; ion implantation diagnostics and process control; and emission of ionizing radiation from ion implanters. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
Download or read book A Study of Ion Implantation Damage and Annealing of Silicon Utilizing Differential Reflectometry written by Susan Weixi Feng and published by . This book was released on 1991 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Damage and In situ Annealing During Ion Implantation written by and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Formation of amorphous (.cap alpha.) layers in Si during ion implantation in the energy range 100 keV-11 MeV and temperature range liquid nitrogen (LN)-100°C has been investigated. Cross-sectional transmission electron microscopy (XTEM) shows that buried amorphous layers can be created for both room temperature (RT) and LN temperature implants, with a wider 100 percent amorphous region for the LN cooled case. The relative narrowing of the .cap alpha. layer during RT implantation is attributed to in-situ annealing. Implantation to the same fluence at temperatures above 100°C does not produce .cap alpha. layers. To further investigate in situ annealing effects, specimens already containing buried .cap alpha. layers were further irradiated with ion beams in the temperature range RT-400°C. It was found that isolated small .cap alpha. zones (less than or equal to 50 diameter) embedded in the crystalline matrix near the two .cap alpha./c interfaces dissolved into the crystal but the thickness of the 100 percent .cap alpha. layer was not appreciably affected by further implantation at 200°C. A model for in situ annealing during implantation is presented.
Download or read book Ion Implantation and Synthesis of Materials written by Michael Nastasi and published by Springer Science & Business Media. This book was released on 2007-05-16 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Download or read book Ion Implantation written by Mark Goorsky and published by BoD – Books on Demand. This book was released on 2012-05-30 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book.
Download or read book Damage annealing and epitaxial realignment of ion implanted Si written by Antonino Cacciato and published by . This book was released on 1994 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation in Semiconductors 1976 written by Fred Chernow and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976. Papers were delivered by scientists and engineers from 15 countries, and the attendees represented 19 countries. As has become the custom at these conferences, the sessions were intense with the coffee breaks and evenings given to informal meetings among the participants. It was a time to renew old friendships, begin new ones, exchange ideas, personally question authors of papers that appeared in the literature since the last conference and find out what was generally happening in Ion Implantation. In recent years it has beome more difficult to get funding to travel to such meetings. To assist the participating authors financial aid was solicited from industry and the Office of Naval Research. We are most grateful for their positive response to our requests. The success of the conference was in part due to their generous contributions. The Program Committee had the unhappy task of the reviewing of more than 170 abstracts. The result of their labors was well worth their effort. Much thanks goes to them for molding the conference into an accurate representation of activities in the field. Behind the scenes in Boulder, local arrangements were handled ably by Graeme Eldridge. The difficulty of this task cannot be overemphasized. Our thanks to him for a job well done.
Download or read book Early Stages of Oxygen Precipitation in Silicon written by R. Jones and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 535 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.
Download or read book C H N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by Newnes. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
Download or read book High Energy and High Dose Ion Implantation written by S.U. Campisano and published by Elsevier. This book was released on 1992-06-16 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.
Download or read book Crucial Issues in Semiconductor Materials and Processing Technologies written by S. Coffa and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.
Download or read book Properties of Crystalline Silicon written by Robert Hull and published by IET. This book was released on 1999 with total page 1054 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.
Download or read book Ion Implantation written by Geoffrey Dearnaley and published by North-Holland. This book was released on 1973 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Technology 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
