Download or read book Current Controlled Liquid Phase Epitaxial Growth of GaAs written by Salem Omar Issa and published by . This book was released on 1977 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Measurement and Control of Oxygen in Liquid Phase Epitaxial Growth of GaAs written by James Sheng-Chung Chang Chang and published by . This book was released on 1983 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electric Current Controlled Liquid Phase Epitaxy of GaAs on N and Semi insulating Substrates written by David Joseph Lawrence and published by . This book was released on 1977 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electric current controlled Growth and Doping Modulation in GaAs Liquid Phase Epitaxy written by David Joseph Lawrence and published by . This book was released on 1975 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Current Controlled Liquid Phase Epitaxial Growth of Silicon Semiconductor written by Siroos Rastani and published by . This book was released on 1988 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Investigation of Current Controlled Liquid Phase Epitaxial Growth of III V Compounds written by Ali Abul-Fadl and published by . This book was released on 1976 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Liquid Phase Epitaxy of Electronic Optical and Optoelectronic Materials written by Peter Capper and published by John Wiley & Sons. This book was released on 2007-08-20 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Download or read book Liquid Phase Epitaxial Growth of GaAs written by Dawnelle Ivy Wynne and published by . This book was released on 1997 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Current Controlled Liquid Phase Epitaxial Growth and Characterization of InGaAs on 100 Inp Substrates written by Murali K. K. Denduluri and published by . This book was released on 1983 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Selective Epitaxial Growth of GaAs from Liquid Phase written by Maciej Piskorski and published by . This book was released on 1974 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book LIQUID PHASE EPITAXIAL GROWTH OF Ga1 Al As GaAs HETEROSTRUCTURES written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Liquid Phase Epitaxial Growth Studies of GaAs written by Hendrik J. Gerritsen and published by . This book was released on 1987 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Current Controlled Liquid Phase Epitaxial Growth of InGaASP written by A. Abul-Fadl and published by . This book was released on 1988 with total page 63 pages. Available in PDF, EPUB and Kindle. Book excerpt: The current controlled liquid phase epitaxy (CCLPE) or electroepitaxy growth technique has been successfully employed for the first time to grow lattice matched In1-xGaxAsyP1-y quaternary layers of compositions corresponding to wavelengths of 1.31 micro meters and 1.52 micrometers. The layers were grown at a constant temperature of 647 C and 685 C. The growth rate of the layers grown at 685 C were 3 to 4 times higher than those grown at 647 C. Further, layers thicker than 3-4 micro meters could not be grown at a lower growth temperature of 647 C. These have been attributed to composition instabilities in the solid system at the growth temperature of 647 C. On increasing the growth temperature to 685 C, thicker layers as high as 20 micro meters of good crystal quality have been grown. Keywords: Crystallography, Etched crystals, Electroepitaxy, Semiconductor compounds, Selective etch-back, Doping, Selective growth, Indium, Allium, Phosphorous, Arsenides, Epitaxial growth, Semiconductor doping, (JES).
Download or read book Control of Impurities in the Epitaxial Growth of High Quality GaAs written by David A. Stevenson and published by . This book was released on 1983 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: A research program is described on the topic of impurity incorporation during the growth of GaAs epitaxial layers. The major portion of the research was the design, construction, and characterization of a molecular beam mass spectrometry (MBMS) system and its use as a diagnostic analytical tool to evaluate typical gaseous environments used in the growth of III-V single crystal layers. The fundamental gas dynamics of the MBMS sampling process were studied as well as the limitations and correction factors for this technique. Two crystal growth environments were analyzed: a liquid phase epitaxial (LPE) GaAs growth system; and an organometallic vapor phase epitaxy (OMVPE) system. In the former system, it was shown that there are significant concentrations of O, C, Si gaseous species in the gas ambient which appear to be the major potential impurities. For OMVPE, two topics were emphasized: the side reactions of the organometallic (OM) reactants, particularly those involving oxygen containing species; and the graphite-OM interaction.
Download or read book Growth and Characterization of Liquid Phase Epitaxial LPE GaAs Layers written by Robindra Dat and published by . This book was released on 1979 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Liquid Phase Epitaxial Growth of III V Compound Semiconductor Materials and Their Device Applications written by M. G. Astles and published by CRC Press. This book was released on 1990 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.
Download or read book On the Growth of Thin Liquid Phase Epitaxial GaAs Layers on Semi insulating GaAs written by Vincent John Watters and published by . This book was released on 1985 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
