Download or read book Contribution l tude de la diffusion des impuret s dopantes dans le silicium written by Pascal Normand and published by . This book was released on 1992 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: DANS UNE PREMIERE PARTIE, CETTE ETUDE TRAITE DES ELEMENTS FONDAMENTAUX UTILES A L'ANALYSE DE LA MIGRATION DES IMPURETES DANS LE SILICIUM. UNE FORMULATION GENERALE DES EQUATIONS DE TRANSPORT DANS LE CAS DU MECANISME LACUNAIRE DE MIGRATION DES IMPURETES DOPANTES EST NOTAMMENT PROPOSEE SUR LA BASE DE LA THEORIE PHENOMENOLOGIQUE DE LA DIFFUSION FONDEE SUR LA THERMODYNAMIQUE DES PROCESSUS IRREVERSIBLES. CES EQUATIONS SONT DISCUTEES A TRAVERS LES COEFFICIENTS DE TRANSPORT PHENOMENOLOGIQUES EXPLICITES EN TERMES DE CARACTERISTIQUES ELEMENTAIRES (CONCENTRATIONS DE DEFAUTS, INTERACTIONS LACUNE-IMPURETE, ...). LES PROPRIETES (NIVEAU(X), ELECTRIQUE(S), ENERGIE(S) DE LIAISON LACUNE-IMPURETE, ...) DES DEFAUTS PONCTUELS SONT EXHAUSTIVEMENT RAPPORTES. LES DIVERS MODELES STATISTIQUES ET APPROCHES PHENOMENOLOGIQUES PROPOSES DANS LA LITTERATURE POUR UN TEL MECANISME SONT REVUS ET CRITIQUES. LA SECONDE PARTIE DE TRAVAIL TRAITE SUR LE PLAN MACROSCOPIQUE DE LA REDISTRIBUTION, APRES IMPLANTATION, DES IMPURETES DOPANTES, L'ARSENIC ET LE BORE, DANS DES STRUCTURES SILICIUM-SUR-ISOLANT OBTENUES PAR IMPLANTATION D'OXYGENE (SIMOX). SE SITUANT DANS UNE PERIODE D'EVOLUTION DES PROCESSUS DE FABRICATION DE CES STRUCTURES, CETTE ETUDE MET EN EVIDENCE LE ROLE PREPONDERANT TENU PAR LA QUALITE DES FILMS DE SILICIUM SUR LA REDISTRIBUTION DES IMPURETES. UNE TELLE ETUDE, EGALEMENT ENTREPRISE DANS LE SILICIUM MASSIF, EST MENEE SUR LA BASE D'UN PARALLELE D'ANALYSES EXPERIMENTALES PHYSICO-CHIMIQUES, CRISTALLOGRAPHIQUES ET ELECTRIQUES, CECI EN CORRELATION AVEC DIVERS TRAITEMENTS PHENOMENOLOGIQUES DES RESULTATS EXPERIMENTAUX

Download or read book Contribution a l etude de la diffusion des impuretes dopantes dans le silicium diffusion des impuretes dopantes dans des structures silicium sur isolant obtenues written by Pascal Normand and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Contribution l tude de la diffusion des dopants dans le silicium written by Daniel Mathiot and published by . This book was released on 1983 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: LES PRINCIPAUX POINTS DU MODELE DEVELOPPES SONT LES SUIVANTS: LA DIFFUSION EST ASSISTEE PAR LES DEUX TYPES DE DEFAUTS PONCTUELS INTRINSEQUES (LACUNES ET AUTOINTERSTITIELS), PAR L'INTERMEDIAIRE DE PAIRES IMPURETE-DEFAUT EN EQUILIBRE LOCAL AVEC LES IMPURETES ET DEFAUTS ISOLES; POUR UNE CONCENTRATION EN DONNEURS SUPERIEURE A 10**(20) CM**(-3), UNE ACCELERATION DE LA DIFFUSION A LIEU A CAUSE DE LA PERCOLATION DES LACUNES DANS LES AMAS D'IMPURETES EN POSITION DE 5EME VOISINS DANS SI; POUR LES FORTES CONCENTRATIONS DE B ET AS, LA DIFFUSION EST FREINEE PAR LA PRESENCE DE COMPLEXES NEUTRES ET IMMOBILES; LES RECOMBINAISONS BIMOLECULAIRES ENTRE DEFAUTS ONT LIEU PAR REACTION DIRECTE ENTRE LACUNES ET AUTOINTERSTITIELS, ET PAR L'INTERMEDIAIRE DES PAIRES IMPURETE-DEFAUT. CE MODELE PERMET DES SIMULATIONS NUMERIQUES PRECISES AUSSI BIEN EN ATMOSPHERE NEUTRE QUE POUR DES RECUITS OXYDANTS

Download or read book Contribution la mod lisation de la diffusion des dopants en fortes concentrations dans le silicium written by Eric Vandenbossche and published by . This book was released on 1994 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Les phenomenes de diffusion des dopants dans le silicium ont une importance grandissante dans les technologies actuelles et futures. En effet, les budgets thermiques diminuent avec les dimensions des dispositifs, et des phenomenes de diffusion transitoire apparaissent lors de la fabrication de jonctions ultra-courtes p#+/n et n#+/p. Ce memoire traite essentiellement des mecanismes de diffusion, bases sur les reactions entre dopants et defauts ponctuels, lesquels sont les interstitiels (atomes de silicium en site interstitiel) et les lacunes (site substitutionnel vacant). La sursaturation des defauts ponctuels, generee au cours des etapes technologiques (bombardements ioniques, oxydations, nitrurations), gouverne la diffusion transitoire des dopants. Un modele general de diffusion des dopants, incluant l'ensemble des mecanismes entre dopants et defauts ponctuels en non-equilibre, constitue la base de cette etude. Ce modele est presente en detail pour l'arsenic, le phosphore et le bore. Trois applications sur la diffusion du bore et du phosphore sont presentees montrant clairement la contribution des defauts ponctuels a la diffusion transitoire de ces dopants observee experimentalement. L'originalite de ce manuscrit consiste en l'etude des phenomenes de diffusion en fortes concentrations, plus precisement appliquee au bore et dans des conditions de preamorphisation. En effet, le bore presente des phenomenes de diffusion anormaux beaucoup plus marques par rapport aux autres dopants. Trois axes d'etudes constituent le traitement presente dans ce memoire: a) modelisation des conditions initiales pour la simulation en terme de concentrations des defauts ponctuels et activation du profil de dopage implante, b) modelisation des effets des boucles de dislocations generees par les etapes d'amorphisation, ces dislocations jouent le role de puit pour les interstitiels, et c) modelisation de la precipitation du bore, par le phenomene de nucleation derive pour la premiere fois dans un modele general de diffusion.

Download or read book ICREEC 2019 written by Ahmed Belasri and published by Springer Nature. This book was released on 2020-06-10 with total page 659 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights peer reviewed articles from the 1st International Conference on Renewable Energy and Energy Conversion, ICREEC 2019, held at Oran in Algeria. It presents recent advances, brings together researchers and professionals in the area and presents a platform to exchange ideas and establish opportunities for a sustainable future. Topics covered in this proceedings, but not limited to, are photovoltaic systems, bioenergy, laser and plasma technology, fluid and flow for energy, software for energy and impact of energy on the environment.

Download or read book Molecular Beam Epitaxy written by John Wilfred Orton and published by . This book was released on 2015 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.

Download or read book Thin Film Dielectrics written by Frederick Vratny and published by . This book was released on 1969 with total page 669 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Properties of Solids written by T. F. Connolly and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since 1963 the Research Materials Information Center has been answering inquiries on the availability, preparation, and properties of ultrapure inorganic research specimens. It has been possible to do this with reasonable efficiency by searching an automated coded microfilm collection of the report and open literature and of data sheets and question naires provided by commercial and research producers of pure materials. With the growth of the collection to over 70,000 documents and the increase in the demand for more general background information, it has been necessary to compile bibliographies on an increasing variety of subjects. These have been used as indexes to the microfilmed documents for more efficient searching, and in the past distributed in response to individual requests. However, their size and number no longer permit so casual and uneconomic a method of distribution. The "ORNL Solid State Physics Literature Guides" is a practical alternative. Organization The subject organization of the bibliography is given by the Table of Contents. Each section is preceded by a collection of reviews, bibliographies, and "general" papers (i.e., those dealing with methods or equipment rather than single materials, or with such a wide variety of materials that no subsection was appropriate). Coverage is generally from 1960 to mid-1970. Emphasis is on inorganic materials.

Download or read book Forest Fire Research written by Universidade de Coimbra and published by . This book was released on 2010 with total page 355 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Mass Transport in Oxides written by J. B. Wachtman and published by . This book was released on 1968 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Crystal Growth in Gels written by Heinz K. Henisch and published by Courier Corporation. This book was released on 1996-01-01 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt: First book ever printed on growing crystals in a gel medium provides thorough descriptions of the procedure, its history and future potential. "Concise and readable."—Science. 42 illus. 1970 edition.

Download or read book Electrochemistry of Semiconductors written by Viktor Alekseevich Miamlin and published by Springer. This book was released on 1967-01-01 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics of Electronic Conduction in Solids written by Frank J. Blatt and published by . This book was released on 1968 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Classification of solids -- Lattice vibrations and lattice specific heat -- Equilibrium properties of a free-electron gas -- Electrons in a periodic lattice -- Transport equation -- Relaxation mechanisms -- Conductivity and related phenomena : metals -- Homogeneous semiconductors -- Rectifying junctions and transistors -- Optical properties of semiconductors -- Properties of semiconductors and metals in strong magnetic fields -- Appendix A. Summary of Elementary Quantum Mechanics -- Appendix B. Units and Conversion factors -- Appendix C. The Periodic Table -- Appendix D. Values of Important Physical Constants and Some Convenient Conversion Factors -- Appendix E. List of Symbols.

Download or read book Ferroelectric Materials and Ferroelectricity written by T. F. Connolly and published by Springer. This book was released on 2013-09-14 with total page 685 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a joint effort of the Research Materials Information Center (RMIC) of the Solid State Division at Oak Ridge National Laboratory and the Libraries and Information Systems Center at Bell Telephone Laboratories (BTL) Murray Hill, N. J. The Research Materials Information Center has, since 1963, been answering inquiries on the avail ability, preparation, and properties of inorganic solid-state research materials. The preparation of bibliographies has been essential to this function, and the interest in ferroelectrics led to the compila tion of the journal and report literature on that subject. The 1962 book Ferroelectric Crystals, by Jona and Shirane, was taken as a cutoff point, and all papers through mid-1969 received by the Center have been included. The Libraries and Information Systems Center of BTL has, over a period of years, developed a proprie tary package of computer programs called BELDEX, which formats and generates indexes to biblio graphic material. This group therefore undertook to process RMIC's ferroelectric references by BELDEX so that both laboratories could have the benefit of an indexed basic bibliography in this important research area.

Download or read book The Growth of Single Crystals written by R. A. Laudise and published by Prentice Hall. This book was released on 1970 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Physics of Semiconductors written by Jacques Paul Suchet and published by . This book was released on 1965 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Crystal Manufacture written by Marshall Sittig and published by William Andrew. This book was released on 1969 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: