Download or read book Computationally Efficient Design and Implementation of SiC MOSFET Models in SPICE written by Blake Whitmore Nelson and published by . This book was released on 2020 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor modeling ignores the requirements of application designers and instead emphasizes detail, physical accuracy, and complexity. While these advancements greatly improve model fidelity, they also serve to increase computational complexity, making the resulting models less attractive to application designers. This is in part because transistor models presented for SPICE are generally evaluated by accuracy alone, without consideration for the computational cost of model elements. Models designers tend to optimize toward the metrics by which their work is judged; with little precedent for disclosing computation time in addition to accuracy, the natural outcome is a plethora of highly accurate, detailed models which are less than ideal for complex application simulations. In order to optimize models for such simulations, this dissertation quantifies the relative computational performance of modeling approaches and contextualizes the results with regard to accuracy. This required the development of a new methodology for quantifying model computational performance. An extensive review of the relevant literature is undertaken to select candidate SiC MOSFET models likely to fare well in complex application simulations. By analyzing the accuracy and computational performance tradeoffs of these candidates, new insights into transistor model design and optimization are identified. These insights inform a new SiC MOSFET model synthesized and optimized from the best-of-breed model elements identified. By focusing on retaining high accuracy while making critical performance optimizations, the new model is ideally suited for complex converter simulations.

Download or read book Gallium Nitride and Silicon Carbide Power Technologies 7 written by M. Dudley and published by The Electrochemical Society. This book was released on with total page 297 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book MOSFET Models for SPICE Simulation written by William Liu and published by Wiley-IEEE Press. This book was released on 2001-02-21 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: An expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4. Drawing upon his extensive experience designing with BSIM, William Liu provides a brief history of the model, discusses the various advantages of BSIM over other models, and explores the reasons why BSIM3 has been adopted by the majority of circuit manufacturers. He then provides engineers with the detailed practical information and guidance they need to master all of BSIM's features. He: Summarizes key BSIM3 components Represents the BSIM3 model with equivalent circuits for various operating conditions Provides a comprehensive glossary of modeling terminology Lists alphabetically BSIM3 parameters along with their meanings and relevant equations Explores BSIM3's flaws and provides improvement suggestions Describes all of BSIM4's improvements and new features Provides useful SPICE files, which are available online at the Wiley ftp site

Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.

Download or read book The Designer s Guide to Spice and Spectre written by Ken Kundert and published by Springer Science & Business Media. This book was released on 2006-04-11 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: Engineering productivity in integrated circuit product design and - velopment today is limited largely by the effectiveness of the CAD tools used. For those domains of product design that are highly dependent on transistor-level circuit design and optimization, such as high-speed logic and memory, mixed-signal analog-digital int- faces, RF functions, power integrated circuits, and so forth, circuit simulation is perhaps the single most important tool. As the complexity and performance of integrated electronic systems has increased with scaling of technology feature size, the capabilities and sophistication of the underlying circuit simulation tools have correspondingly increased. The absolute size of circuits requiring transistor-level simulation has increased dramatically, creating not only problems of computing power resources but also problems of task organization, complexity management, output representation, initial condition setup, and so forth. Also, as circuits of more c- plexity and mixed types of functionality are attacked with simu- tion, the spread between time constants or event time scales within the circuit has tended to become wider, requiring new strategies in simulators to deal with large time constant spreads.

Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Download or read book POWER HVMOS Devices Compact Modeling written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2010-07-20 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.

Download or read book CMOS Digital Integrated Circuits written by Sung-Mo Kang and published by . This book was released on 2002 with total page 655 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fourth edition of CMOS Digital Integrated Circuits: Analysis and Design continues the well-established tradition of the earlier editions by offering the most comprehensive coverage of digital CMOS circuit design, as well as addressing state-of-the-art technology issues highlighted by the widespread use of nanometer-scale CMOS technologies. In this latest edition, virtually all chapters have been re-written, the transistor model equations and device parameters have been revised to reflect the sigificant changes that must be taken into account for new technology generations, and the material has been reinforced with up-to-date examples. The broad-ranging coverage of this textbook starts with the fundamentals of CMOS process technology, and continues with MOS transistor models, basic CMOS gates, interconnect effects, dynamic circuits, memory circuits, arithmetic building blocks, clock and I/O circuits, low power design techniques, design for manufacturability and design for testability.

Download or read book Multiphysics Simulation by Design for Electrical Machines Power Electronics and Drives written by Marius Rosu and published by John Wiley & Sons. This book was released on 2017-12-18 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents applied theory and advanced simulation techniques for electric machines and drives This book combines the knowledge of experts from both academia and the software industry to present theories of multiphysics simulation by design for electrical machines, power electronics, and drives. The comprehensive design approach described within supports new applications required by technologies sustaining high drive efficiency. The highlighted framework considers the electric machine at the heart of the entire electric drive. The book also emphasizes the simulation by design concept—a concept that frames the entire highlighted design methodology, which is described and illustrated by various advanced simulation technologies. Multiphysics Simulation by Design for Electrical Machines, Power Electronics and Drives begins with the basics of electrical machine design and manufacturing tolerances. It also discusses fundamental aspects of the state of the art design process and includes examples from industrial practice. It explains FEM-based analysis techniques for electrical machine design—providing details on how it can be employed in ANSYS Maxwell software. In addition, the book covers advanced magnetic material modeling capabilities employed in numerical computation; thermal analysis; automated optimization for electric machines; and power electronics and drive systems. This valuable resource: Delivers the multi-physics know-how based on practical electric machine design methodologies Provides an extensive overview of electric machine design optimization and its integration with power electronics and drives Incorporates case studies from industrial practice and research and development projects Multiphysics Simulation by Design for Electrical Machines, Power Electronics and Drives is an incredibly helpful book for design engineers, application and system engineers, and technical professionals. It will also benefit graduate engineering students with a strong interest in electric machines and drives.

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Download or read book High Temperature Electronics written by F. Patrick McCluskey and published by CRC Press. This book was released on 2018-05-04 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of electronics that can operate at high temperatures has been identified as a critical technology for the next century. Increasingly, engineers will be called upon to design avionics, automotive, and geophysical electronic systems requiring components and packaging reliable to 200 °C and beyond. Until now, however, they have had no single resource on high temperature electronics to assist them. Such a resource is critically needed, since the design and manufacture of electronic components have now made it possible to design electronic systems that will operate reliably above the traditional temperature limit of 125 °C. However, successful system development efforts hinge on a firm understanding of the fundamentals of semiconductor physics and device processing, materials selection, package design, and thermal management, together with a knowledge of the intended application environments. High Temperature Electronics brings together this essential information and presents it for the first time in a unified way. Packaging and device engineers and technologists will find this book required reading for its coverage of the techniques and tradeoffs involved in materials selection, design, and thermal management and for its presentation of best design practices using actual fielded systems as examples. In addition, professors and students will find this book suitable for graduate-level courses because of its detailed level of explanation and its coverage of fundamental scientific concepts. Experts from the field of high temperature electronics have contributed to nine chapters covering topics ranging from semiconductor device selection to testing and final assembly.

Download or read book Introduction to Modern Power Electronics written by Andrzej M. Trzynadlowski and published by John Wiley & Sons. This book was released on 2015-11-16 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides comprehensive coverage of the basic principles and methods of electric power conversion and the latest developments in the field This book constitutes a comprehensive overview of the modern power electronics. Various semiconductor power switches are described, complementary components and systems are presented, and power electronic converters that process power for a variety of applications are explained in detail. This third edition updates all chapters, including new concepts in modern power electronics. New to this edition is extended coverage of matrix converters, multilevel inverters, and applications of the Z-source in cascaded power converters. The book is accompanied by a website hosting an instructor’s manual, a PowerPoint presentation, and a set of PSpice files for simulation of a variety of power electronic converters. Introduction to Modern Power Electronics, Third Edition: Discusses power conversion types: ac-to-dc, ac-to-ac, dc-to-dc, and dc-to-ac Reviews advanced control methods used in today’s power electronic converters Includes an extensive body of examples, exercises, computer assignments, and simulations Introduction to Modern Power Electronics, Third Edition is written for undergraduate and graduate engineering students interested in modern power electronics and renewable energy systems. The book can also serve as a reference tool for practicing electrical and industrial engineers.

Download or read book The Power MOSFET Application Handbook written by and published by . This book was released on 2016 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Distributed Power Amplifiers for RF and Microwave Communications written by Narendra Kumar and published by Artech House. This book was released on 2015-06-01 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.

Download or read book Intelligent Computing Techniques for Smart Energy Systems written by Akhtar Kalam and published by Springer Nature. This book was released on 2019-12-16 with total page 1011 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book compiles the research works related to smart solutions concept in context to smart energy systems, maintaining electrical grid discipline and resiliency, computational collective intelligence consisted of interaction between smart devices, smart environments and smart interactions, as well as information technology support for such areas. It includes high-quality papers presented in the International Conference on Intelligent Computing Techniques for Smart Energy Systems organized by Manipal University Jaipur. This book will motivate scholars to work in these areas. The book also prophesies their approach to be used for the business and the humanitarian technology development as research proposal to various government organizations for funding approval.