EBookClubs

Read Books & Download eBooks Full Online

EBookClubs

Read Books & Download eBooks Full Online

Book Composition Engineering for Solution Processed Gallium Rich Indium Gallium Zinc Oxide Thin Film Transistors

Download or read book Composition Engineering for Solution Processed Gallium Rich Indium Gallium Zinc Oxide Thin Film Transistors written by Isaac Caleb Wang and published by . This book was released on 2018 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal oxides have risen to prominence in recent years as a promising active layer for thin film transistors (TFTs). One of the main reasons for this has been its value in display technology. Conventionally, displays have relied on amorphous hydrogenated silicon (a-Si:H) TFTs but the demand for large area displays with high resolution, fast response time, low power consumption and compatibility with integrated driving circuits have prompted research into other semiconducting materials. As a result, metal oxides have become major prospects to replace a-Si:H with their high-performance electrical characteristics and simplicity of processing, making them valuable switching elements in display technology. Particularly, quaternary metal oxides such as the amorphous Indium-Gallium-Zinc-Oxide (IGZO) have demonstrated extremely high performances as TFTs, prompting extensive research in the field. The conventional method of producing metal oxide thin films has been through vacuum deposition methods such as sputtering. However, for large area applications these vacuum deposition methods face inherent limitations which prevent easy application and device fabrication. Facing these restrictions, solution-processing has become a popularly researched alternative in producing metal oxide thin films due to their simple processing requirements, low cost, and ability to be applied over large areas. In solution-processed IGZO, there have been a couple approaches to improve device performance and stability as well as simplify processing. In this work, we produce a gallium-rich 2:2:1 IGZO TFT using solution processes and study its electrical characteristics and stability. In this paper, we demonstrate a working solution-processed gallium-rich 2:2:1 IGZO TFT and compare it to a solution-processed indium-rich device to quantify its stability and performance. Through this work, we show that solution-processing is a viable fabrication method for gallium-rich IGZO, which can be a high-stability alternative to other compositions of IGZO devices.

Book Amorphous Indium Gallium Zinc Oxide Based Thin Film Transistors and Circuits

Download or read book Amorphous Indium Gallium Zinc Oxide Based Thin Film Transistors and Circuits written by Haojun Luo and published by . This book was released on 2013 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Development of Indium Gallium Zinc Oxide Thin Film Transistors on a Softening Shape Memory Polymer for Implantable Neural Interfaces Devices

Download or read book Development of Indium Gallium Zinc Oxide Thin Film Transistors on a Softening Shape Memory Polymer for Implantable Neural Interfaces Devices written by Ovidio Rodriguez Lopez and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuous improvement in electronic active devices has led to several innovations in semiconductor materials, novel deposition methods, and improved microfabrication techniques. In the same way, the implementation of thin-film technology has revolutionized the semiconductor industry. For instance, the field of flexible electronics has utilized novel thin-film electronics components for the fabrication flexible displays, radio frequency identification (RF-ID) tags, and solar cells. Moreover, flexible electronics have sparked a great interest in the field of bioelectronics, for the fabrication of high-spatial-resolution implantable devices for neural interfaces. This incorporation of thin-film technology can potentially enable stimulation and recording the nervous system activity by utilizing novel, minimally invasive, conformal devices. To achieve this, flexible electronics circuits must possess high performance, reliability, and stability, as well as be resilient to mechanical stress and human body conditions, are some of the requirements that flexible electronics must meet for the realization of these devices. Furthermore, the choice of substrates is also critical since it directly affects final properties of the active devices. Substrates, which are mechanically and biologically compliant, are preferred. For this reason, novel, softening materials like thiol-ene polymers are considered in this research. This work centers on the development of Indium-Gallium-Zinc-Oxide (IGZO) thin-film transistors (TFT) using the thiol-ene softening polymer as substrate. Functional IGZO-TFTs were fabricated on top of 50 μm of a thiol-ene/acrylate shape memory polymer (SMP) and electrically characterized. Hafnium oxide (HfO2) deposited at 100°C by atomic layer deposition was used as gate dielectric, and gold (Au) as contacts. The devices were exposed to oxygen, vacuum and forming gas (FG) environments at 250°C to analyze the effects of these atmospheres on the IGZO-TFTs. Improvement in the electrical performance was noticed after the exposure to FG with a significant change in mobility from 0.01 to 30 cm2 V-1s-1, and a reduction in the threshold voltage shift (∆Vth), which it is translated into an increase on stability. Vacuum and oxygen effects were, also analyzed and compared. Furthermore, a time-dependent dielectric breakdown (TDDB) analysis was performed to define the lifetime of the transistors, where a prediction of 10 years at an operational range below 5 V was obtained. Additionally, the TFTs were encapsulated with 5 μm of SMP and exposed to simulated in vivo conditions. Up to 104 bending cycles were performed to the IGZO-TFTs with a bending radius of 5 mm and then, soaked into PBS solution at 37°C for one week to determine the resilience and reliability of the devices. The encapsulated IGZO-TFTs survived to the PBS environment and demonstrated resilience to mechanical deformation with small changes in the electronic properties. The results provided in this research contribute to the development of complex circuitry based on thin-film devices using mechanically adaptive polymers as a flexible substrate and enable the production of multichannel implantable bioelectronics devices.

Book Transparent Electronics

Download or read book Transparent Electronics written by Elvira Fortunato and published by . This book was released on with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Introduction to Thin Film Transistors

Download or read book Introduction to Thin Film Transistors written by S.D. Brotherton and published by Springer Science & Business Media. This book was released on 2013-04-16 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.

Book Amorphous Oxide Semiconductors

Download or read book Amorphous Oxide Semiconductors written by Hideo Hosono and published by John Wiley & Sons. This book was released on 2022-05-17 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Book TMS 2019 148th Annual Meeting Exhibition Supplemental Proceedings

Download or read book TMS 2019 148th Annual Meeting Exhibition Supplemental Proceedings written by The Minerals, Metals & Materials Series and published by Springer. This book was released on 2019-02-27 with total page 1731 pages. Available in PDF, EPUB and Kindle. Book excerpt: This collection features papers presented at the 147th Annual Meeting & Exhibition of The Minerals, Metals & Materials Society.

Book Oxide Semiconductors Volume 1633

Download or read book Oxide Semiconductors Volume 1633 written by Steve Durbin and published by Materials Research Society. This book was released on 2014-07-14 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Symposium R, "Oxide Semiconductors" was held December 1-6 at the 2013 MRS Fall Meeting in Boston, Massachusetts. Oxide semiconductors are poised to take a more active role in modern electronics, particularly in the field of thin film transistors. While many advances have been made in terms of our understanding of fundamental optical and electronic characteristics, there remain many questions in terms of defects, doping, and optimal growth/synthesis conditions. This symposium proceedings volume represents recent advances in growth and characterization of a number of different oxide semiconductors, as well as device fabrication.

Book Atomic Layer Deposition in Energy Conversion Applications

Download or read book Atomic Layer Deposition in Energy Conversion Applications written by Julien Bachmann and published by John Wiley & Sons. This book was released on 2017-03-15 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: Combining the two topics for the first time, this book begins with an introduction to the recent challenges in energy conversion devices from a materials preparation perspective and how they can be overcome by using atomic layer deposition (ALD). By bridging these subjects it helps ALD specialists to understand the requirements within the energy conversion field, and researchers in energy conversion to become acquainted with the opportunities offered by ALD. With its main focus on applications of ALD for photovoltaics, electrochemical energy storage, and photo- and electrochemical devices, this is important reading for materials scientists, surface chemists, electrochemists, electrotechnicians, physicists, and those working in the semiconductor industry.