Download or read book Compact Modeling of Silicon Carbide SiC Vertical Junction Field Effect Transistor VJFET in PSpice Using Angelov Model and PSpice Simulation of Analog Circuit Building Blocks Using SiC VJFET Model written by Siddharth Purohit and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the development of compact model of novel silicon carbide (SiC) Vertical Junction Field Effect Transistor (VJFET) for high-power circuit simulation. An empirical Angelov model is developed for SiC VJFET in PSpice. The model is capable of accurately replicating the device behavior for the DC and Transient conditions. The model was validated against measured data obtained from devices developed by Mississippi Center for Advanced Semiconductor Prototyping at MSU and SemiSouth Laboratories. The modeling approach is based on extracting Angelov Equations Coefficients from experimental device characteristics using non linear fitting. The coefficients are extracted for different parameters (temperature, width, etc). Multi-Dimensional Interpolation Technique is used to incorporate the effect of more than one parameter. The models developed in this research are expected to be valuable tools for electronic designers in the future. The developed model was applied for investigating the characteristics of a few standard analog circuit blocks using SiC VJFET and Si JFET in order to demonstrate the capabilities of the model to reveal the relative advantages of one over the other. The selected circuits of interest were Voltage Follower, Common Source Amplifier, Current Source and Differential Amplifier. Simulations of analog circuit building blocks incorporating SiC VJFET showed better circuit functionality compared to their Si counterparts.
Download or read book COMPACT MODELING OF SILICON CARBIDE SIC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR VJFET IN PSPICE USING ANGELOV MODEL AND PSPICE SIMULATION OF ANALOG CIRCUIT BUILDING BLOCKS USING SIC VJFET MODEL written by and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the development of compact model of novel silicon carbide (SiC) Vertical Junction Field Effect Transistor (VJFET) for high-power circuit simulation. An empirical Angelov model is developed for SiC VJFET in PSpice. The model is capable of accurately replicating the device behavior for the DC and Transient conditions. The model was validated against measured data obtained from devices developed by Mississippi Center for Advanced Semiconductor Prototyping at MSU and SemiSouth Laboratories. The modeling approach is based on extracting Angelov Equations Coefficients from experimental device characteristics using non linear fitting. The coefficients are extracted for different parameters (temperature, width, etc). Multi-Dimensional Interpolation Technique is used to incorporate the effect of more than one parameter. The models developed in this research are expected to be valuable tools for electronic designers in the future. The developed model was applied for investigating the characteristics of a few standard analog circuit blocks using SiC VJFET and Si JFET in order to demonstrate the capabilities of the model to reveal the relative advantages of one over the other. The selected circuits of interest were Voltage Follower, Common Source Amplifier, Current Source and Differential Amplifier. Simulations of analog circuit building blocks incorporating SiC VJFET showed better circuit functionality compared to their Si counterparts.
Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2007 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.
Download or read book Development of High Temperature High Power High Efficiency High Voltage Converters Using Silicon Carbide SiC Delivery Order Delivery Order 0002 Critical Analysis of SiC VJFET Design and Performance Based Upon Material and Device Properties written by and published by . This book was released on 2005 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide as a semiconductor material possesses several significant physical properties which make it superior for applications to high power devices. This report documents the efforts to develop, demonstrate, and optimize the design and fabrication methodologies for the realization of power vertical junction field effect transistors in the 4H-polytype of silicon carbide. Theoretical prediction and modeling simulation, incorporating all the significant SiC specific device physics, are utilized to develop a design methodology which is to ultimately be used for device fabrication. The results illustrate that good agreement between theoretical prediction and accurately modeled simulations can be achieved and enable the forecasting of device performance as a function of temperature, design modification, and variations in material transport characteristics.
Download or read book Electrical Characterizations of Silicon Carbide SiC Static Induction Transistors SITs and Vertical Channel Junction Field Effect Transistors VJFETs written by Sharmila Devi Magan Lal and published by . This book was released on 2004 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling And Electrothermal Simulation Of Sic Power Devices Using Silvaco Atlas written by Pushpakaran Bejoy N and published by World Scientific. This book was released on 2019-03-25 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.
Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Download or read book Design Simulation and Construction of Field Effect Transistors written by Dhanasekaran Vikraman and published by BoD – Books on Demand. This book was released on 2018-07-18 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Download or read book Silicon Carbide Vertical junction Field effect Transistors written by Kiyoshi Tone and published by . This book was released on 2002 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effect of Total Ionizing Dose and Heavy Ion Radiation in a Silicon Carbide Vertical Junction Field Effect Transistor written by Robert Steele Shaw and published by . This book was released on 2013 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: As silicon carbide (SiC) power semiconductor devices become a more attractive alternative to silicon based technology (due to their lower on-resistance, higher voltage blocking, and higher operating temperature), SiC-based electronics will need to be qualified for high reliability applications, i.e., space exploration vehicles requiring a minimal level of radiation hardening. Unfortunately, very little data exists for SiC power devices due to their lack of commercial availability. It was only very recently that SiC power devices have been introduced into the commercial market. This work presents the radiation testing of a 1200 V SiC vertical junction field-effect transistor (VJFET) under total ionizing dose (TID) and heavy ion radiation hardness of a 1200 V SiC VJET. The TID testing revealed that the SiC VJFET is radiation hardened in excess of 300 krad, and the heavy ion testing revealed that the device is radiation hardened to 60 MeV-cm2/mg under a drain to source voltage and gate to source bias of 300 V and 0 V, respectively. While there is much more work to be done before integration into high reliability applications, a space exploration vehicle utilizing SiC power devices would see benefits in terms of gravimetric and volumetric reductions on a system-wide level, e.g., a more efficient power management unit, reduced thermal management system, and/or reduced energy storage system.
Download or read book Compact Modeling of Silicon Carbide Junction Field Effect Devices written by Avinash S. Kashyap and published by . This book was released on 2005 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book MOSFET Modeling Simulation and Parameter Extraction in 4H 6H Silicon Carbide written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the work on analytical modeling and simulation of a silicon carbide (SiC) power MOSFET, model verification with test data, and device characterization and parameter extraction of the SPICE model. The development of temperature models for a lateral as well as a vertical MOSFET in SiC are also presented. The model takes into account the various short channel effects in the DIMOS channel region as well as the velocity saturation effect in the drift region. Considering the SiC material processing limitations and feedback from the system level application group, an application specific SiC power MOSFET structure has been proposed. The device dimensions were chosen to obtain the desired specific on-resistance and breakdown voltage of the power MOSFET. A good agreement between the analytical model and the MEDICI simulation is demonstrated. The temperature models include effects of temperature on the threshold voltage, carrier mobility, the body leakage current, and the drain and source contact region resistances for a lateral MOSFET and the effects of temperature on the threshold voltage, carrier mobility, the body leakage current, drift region resistance and channel resistance for a vertical MOSFET. The temperature dependent compensating current elements are introduced in the model. These compensating currents contribute to the total current at high temperatures. A rigorous testing and characterization has been carried out on a 4H-SiC DIMOS transistor test device. SPICE parameters have been extracted from the measurements and a SPICE model for the DIMOS transistor has been developed. The models developed in this research will not only help the SiC device researchers in the device behavioral study but will also provide a SPICE model for circuit designers.
Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by IntechOpen. This book was released on 2012-10-16 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Download or read book Silicon Carbide Field Effect Transistor FET Transducers for Harsh Environment Applications written by Walter Daves and published by . This book was released on 2013-03-12 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation Modeling and Characterization of SiC Devices written by Liangchun Yu and published by . This book was released on 2010 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: With superior material properties, Silicon carbide (SiC) power devices show great potential for high-power density, high temperature switching applications. Among all the power device structures, SiC MOSFET attracts the most attention because of its high gate input impedance, simple gate control and fast switching speed. However, low inversion channel mobility, high near-interface state density close to the conduction band edge, questionable oxide reliability as well as theoretical limit on the device figure-of-merit still remain to be significant challenges to the development of SiC power MOSFETs. In this dissertation, all of the above challenges are addressed from various approaches. First, simulations on the super-junction structure show that the unipolar theoretical limit of SiC can be broken even with the state-of-the-art processing technologies. An easy-to-implement analytical model is developed for calculations of the blocking voltage, specific on-resistance and charge imbalance effects of 4H-SiC super-junction devices. This model is validated by extensive numerical simulations with a large variety of device parameters. Device design and optimization using this model are also presented. Second, a wafer-level Hall mobility measurement technique is developed to measure channel mobility more accurately, more efficiently and more cost-effectively. Device characterization and development are much more convenient by using this technique. With this method, further explorations of interactions between interface traps and channel carriers as well as device degradation mechanisms become possible. Third, reliability of SiO2 on 4H-SiC is characterized with time dependent dielectric breakdown (TDDB) measurements at various temperatures and electric fields. Lifetime prediction to normal operation conditions suggests that the oxide on SiC has a characteristic lifetime of 10 years at 375° C if the oxide electric field is kept below 4.6 MV/cm. The observed excellent reliability data contradict the widespread belief that the oxide on SiC is intrinsically limited by its physical properties. Detailed discussions are provided to re-examine the arguments leading to the misconception.
Download or read book A Three Region Analytical Model for Short Channel Silicon Carbide SiC MESFET s written by Rahul Reddy Kambalapally and published by . This book was released on 2013 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project presents an improved analytical model of the three regions in a SiC metal semiconductor field effect transistor(MESFET). The analytical model mainly focuses on two regions in the active channel that are between gate-source and drain-source. The third region gate-drain (which is ungated) is ignored in this analytical model due to the very large potential drop at high drain voltages in a short channel device. In order to improve the accuracy in this model, the parasitic resistance and incomplete ionization of dopants have been incorporated. Considering these effects in the analytical model, a simulation of the current and voltage characteristics and transfer characteristics of the Silicon Carbide MESFET has been developed and discussed in detailed in this thesis.
Download or read book Designing with Field effect Transistors written by Siliconix Incorporated and published by McGraw-Hill Companies. This book was released on 1981 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
