Download or read book CMOS RF Circuit Design for Reliability and Variability written by Jiann-Shiun Yuan and published by Springer. This book was released on 2016-04-13 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject of this book is CMOS RF circuit design for reliability. The device reliability and process variation issues on RF transmitter and receiver circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical equations, experimental data, device and circuit simulation results will be given for clear explanation. The main benefit the reader derive from this book will be clear understanding on how device reliability issues affects the RF circuit performance subjected to operation aging and process variations.

Download or read book RF Power Amplifier and Oscillator Design for Reliability and Variability written by Shuyu Chen and published by . This book was released on 2013 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS RF circuit design has been an ever-lasting research field. It gained so much attention since RF circuits have high mobility and wide band efficiency, while CMOS technology has the advantage of low cost and better capability of integration. At the same time, IC circuits never stopped scaling down for the recent many decades. Reliability issues with RF circuits have become more and more severe with device scaling down: reliability effects such as gate oxide break down, hot carrier injection, negative bias temperature instability, have been amplified as the device size shrinks. Process variability issues also become more predominant as the feature size decreases. With these insights provided, reliability and variability evaluations on typical RF circuits and possible compensation techniques are highly desirable. In this work, a class E power amplifier is designed and laid out using TSMC 0.18 [micrometer] RF technology and the chip was fabricated. Oxide stress and hot electron tests were carried out at elevated supply voltage, fresh measurement results were compared with different stress conditions after 10 hours. Test results matched very well with mixed mode circuit simulations, proved that hot carrier effects degrades PA performances like output power, power efficiency, etc. Self- heating effects were examined on a class AB power amplifier since PA has high power operations. Device temperature simulation was done both in DC and mixed mode level. Different gate biasing techniques were analyzed and their abilities to compensate output power were compared. A simple gate biasing circuit turned out to be efficient to compensate self-heating effects under different localized heating situations. Process variation was studied on a classic Colpitts oscillator using Monte-Carlo simulation. Phase noise was examined since it is a key parameter in oscillator. Phase noise was modeled using analytical equations and supported by good match between MATLAB results and ADS simulation. An adaptive body biasing circuit was proposed to eliminate process variation. Results from probability density function simulation demonstrated its capability to relieve process variation on phase noise. Standard deviation of phase noise with adaptive body bias is much less than the one without compensation. Finally, a robust, adaptive design technique using PLL as on-chip sensor to reduce Process, Voltage, Temperature (P.V.T.) variations and other aging effects on RF PA was evaluated. The frequency and phase of ring oscillator need to be adjusted to follow the frequency and phase of input in PLL no matter how the working condition varies. As a result, the control signal of ring oscillator has to fluctuate according to the working condition, reflecting the P.V.T changes. RF circuits suffer from similar P.V.T. variations. The control signal of PLL is introduced to RF circuits and converted to the adaptive tuning voltage for substrate bias. Simulation results illustrate that the PA output power under different variations is more flat than the one with no compensation. Analytical equations show good support to what has been observed.

Download or read book Study of Design for Reliability of RF and Analog Circuits written by Hongxia Tang and published by . This book was released on 2012 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to continued device dimensions scaling, CMOS transistors in the nanometer regime have resulted in major reliability and variability challenges. Reliability issues such as channel hot electron injection, gate dielectric breakdown, and negative bias temperature instability (NBTI) need to be accounted for in the design of robust RF circuits. In addition, process variations in the nanoscale CMOS transistors are another major concern in today's circuits design. An adaptive gate-source biasing scheme to improve the RF circuit reliability is presented in this work. The adaptive method automatically adjusts the gate-source voltage to compensate the reduction in drain current subjected to various device reliability mechanisms. A class-AB RF power amplifier shows that the use of a source resistance makes the power-added efficiency robust against threshold voltage and mobility variations, while the use of a source inductance is more reliable for the input third-order intercept point. A RF power amplifier with adaptive gate biasing is proposed to improve the circuit device reliability degradation and process variation. The performances of the power amplifier with adaptive gate biasing are compared with those of the power amplifier without adaptive gate biasing technique. The adaptive gate biasing makes the power amplifier more resilient to process variations as well as the device aging such as mobility and threshold voltage degradation. Injection locked voltage-controlled oscillators (VCOs) have been examined. The VCOs are implemented using TSMC 0.18 [micrometer] mixed-signal CMOS technology. The injection locked oscillators have improved phase noise performance than free running oscillators. A differential Clapp-VCO has been designed and fabricated for the evaluation of hot electron reliability. The differential Clapp-VCO is formed using cross-coupled nMOS transistors, on-chip transformers/inductors, and voltage-controlled capacitors. The experimental data demonstrate that the hot carrier damage increases the oscillation frequency and degrades the phase noise of Clapp-VCO. A p-channel transistor only VCO has been designed for low phase noise. The simulation results show that the phase noise degrades after NBTI stress at elevated temperature. This is due to increased interface states after NBTI stress. The process variability has also been evaluated.

Download or read book RF Circuit Designs for Reliability and Process Variability Resilience written by Ekavut Kritchanchai and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS devices are scaled down and beyond pose significant process variability and reliability issues. Negative biased temperature instability (NBTI) and hot carrier injection (HCI) are well-known aging phenomena that degrade transistor and circuit performance. Yield analysis and optimization, which takes into account the manufacturing tolerances, model uncertainties, variations in the process parameters, and aging factors are known as indispensable components of the circuit design procedure. Process variability issues become more predominant as the feature size decreases. With these insights provided, reliability and variability evaluations on typical RF circuits and possible compensation techniques are highly desirable. In this work, a class F power amplifier was designed and evaluated using TSMC 0.18 [micrometer] RF technology. The PA’s output power and power-added efficiency were evaluated using the ADS simulation. Physical insight of transistor operation in the RF circuit environment was examined using the Sentaurus mixed-mode device and circuit simulation. The hot electron effect and device self-heating degraded the output power and power-added efficiency of the power amplifier, especially when both the input transistor and output transistor suffered high impact ionization rates and lattice heating.

Download or read book CMOS RF Cituits sic Variability and Reliability Resilient Design Modeling and Simulation written by Yidong Liu and published by . This book was released on 2011 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work presents a novel voltage biasing design that helps the CMOS RF circuits resilient to variability and reliability. The biasing scheme provides resilience through the threshold voltage (V[subscript T) adjustment, and at the mean time it does not degrade the PA performance. Analytical equations are established for sensitivity of the resilient biasing under various scenarios. Power Amplifier (PA) and Low Noise Amplifier (LNA) are investigated case by case through modeling and experiment. PTM 65nm technology is adopted in modeling the transistors within these RF blocks. A traditional class-AB PA with resilient design is compared the same PA without such design in PTM 65nm technology. Analytical equations are established for sensitivity of the resilient biasing under various scenarios. A traditional class-AB PA with resilient design is compared the same PA without such design in PTM 65nm technology. The results show that the biasing design helps improve the robustness of the PA in terms of linear gain, P1dB, Psat, and power added efficiency (PAE). Except for post-fabrication calibration capability, the design reduces the majority performance sensitivity of PA by 50% when subjected to threshold voltage (V[subscript T]) shift and 25% to electron mobility ([mu subscript n]) degradation. The impact of degradation mismatches is also investigated. It is observed that the accelerated aging of MOS transistor in the biasing circuit will further reduce the sensitivity of PA. In the study of LNA, a 24 GHz narrow band cascade LNA with adaptive biasing scheme under various aging rate is compared to LNA without such biasing scheme. The modeling and simulation results show that the adaptive substrate biasing reduces the sensitivity of noise figure and minimum noise figure subject to process variation and device aging such as threshold voltage shift and electron mobility degradation. Simulation of different aging rate also shows that the sensitivity of LNA is further reduced with the accelerated aging of the biasing circuit. Thus, for majority RF transceiver circuits, the adaptive body biasing scheme provides overall performance resilience to the device reliability induced degradation. Also the tuning ability designed in RF PA and LNA provides the circuit post-process calibration capability.

Download or read book Digitally Assisted Analog and RF CMOS Circuit Design for Software Defined Radio written by Kenichi Okada and published by Springer Science & Business Media. This book was released on 2011-08-26 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the state-of-the-art in RF, analog, and mixed-signal circuit design for Software Defined Radio (SDR). It synthesizes for analog/RF circuit designers the most important general design approaches to take advantage of the most recent CMOS technology, which can integrate millions of transistors, as well as several real examples from the most recent research results.

Download or read book Parasitic Aware Optimization of CMOS RF Circuits written by David J. Allstot and published by Springer Science & Business Media. This book was released on 2005-12-02 with total page 169 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the arena of parasitic-aware design of CMOS RF circuits, efforts are aimed at the realization of true single-chip radios with few, if any, off-chip components. The parasitic-aware RF circuit synthesis techniques described in this book effectively address critical problems in this field.

Download or read book The Design of CMOS Radio Frequency Integrated Circuits written by Thomas H. Lee and published by Cambridge University Press. This book was released on 2004 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, first published in 2004, is an expanded and revised edition of Tom Lee's acclaimed RFIC text.

Download or read book Variation Aware Analog and Mixed Signal Circuit Design in Emerging Multi Gate CMOS Technologies written by Michael Fulde and published by Springer Science & Business Media. This book was released on 2009-10-27 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.

Download or read book Device Modeling for Analog and RF CMOS Circuit Design written by Trond Ytterdal and published by John Wiley & Sons. This book was released on 2003-08-01 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 &, and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.

Download or read book RF CMOS Power Amplifiers Theory Design and Implementation written by Mona M. Hella and published by Springer Science & Business Media. This book was released on 2005-12-27 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt: RF CMOS Power Amplifiers: Theory Design and Implementation focuses on the design procedure and the testing issues of CMOS RF power amplifiers. This is the first monograph addressing RF CMOS power amplifier design for emerging wireless standards. The focus on power amplifiers for short is distance wireless personal and local area networks (PAN and LAN), however the design techniques are also applicable to emerging wide area networks (WAN) infrastructure using micro or pico cell networks. The book discusses CMOS power amplifier design principles and theory and describes the architectures and tardeoffs in designing linear and nonlinear power amplifiers. It then details design examples of RF CMOS power amplifiers for short distance wireless applications (e, g., Bluetooth, WLAN) including designs for multi-standard platforms. Design aspects of RF circuits in deep submicron CMOS are also discussed. RF CMOS Power Amplifiers: Theory Design and Implementation serves as a reference for RF IC design engineers and RD and R&D managers in industry, and for graduate students conducting research in wireless semiconductor IC design in general and with CMOS technology in particular.

Download or read book Design of CMOS RF Integrated Circuits and Systems written by Kiat Seng Yeo and published by World Scientific. This book was released on 2010 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides the most comprehensive and in-depth coverage of the latest circuit design developments in RF CMOS technology. It is a practical and cutting-edge guide, packed with proven circuit techniques and innovative design methodologies for solving challenging problems associated with RF integrated circuits and systems. This invaluable resource features a collection of the finest design practices that may soon drive the system-on-chip revolution. Using this book's state-of-the-art design techniques, one can apply existing technologies in novel ways and to create new circuit designs for the future.

Download or read book CMOS Circuit Design for RF Sensors written by Gunnar Gudnason and published by Springer Science & Business Media. This book was released on 2006-04-18 with total page 183 pages. Available in PDF, EPUB and Kindle. Book excerpt: This useful reference is about CMOS circuit design for sensor and actuators to be used in wireless RF systems. It places special focus on the power and data link in a wireless system with transducers powered via the RF link, presenting novel principles and methods.

Download or read book Design and Reliability Studies of CMOS RF Millimeter Wave Circuits written by 顏玄德 and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book CMOS RF Modeling Characterization and Applications written by M. Jamal Deen and published by World Scientific. This book was released on 2002 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Download or read book Low Power RF Circuit Design in Standard CMOS Technology written by Unai Alvarado and published by Springer Science & Business Media. This book was released on 2011-10-18 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Power Consumption is one of the critical issues in the performance of small battery-powered handheld devices. Mobile terminals feature an ever increasing number of wireless communication alternatives including GPS, Bluetooth, GSM, 3G, WiFi or DVB-H. Considering that the total power available for each terminal is limited by the relatively slow increase in battery performance expected in the near future, the need for efficient circuits is now critical. This book presents the basic techniques available to design low power RF CMOS analogue circuits. It gives circuit designers a complete guide of alternatives to optimize power consumption and explains the application of these rules in the most common RF building blocks: LNA, mixers and PLLs. It is set out using practical examples and offers a unique perspective as it targets designers working within the standard CMOS process and all the limitations inherent in these technologies.

Download or read book High Linearity CMOS RF Front End Circuits written by Yongwang Ding and published by Springer Science & Business Media. This book was released on 2006-02-08 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on high performance radio frequency integrated circuits (RF IC) design in CMOS. 1. Development of radio frequency ICs Wireless communications has been advancing rapidly in the past two decades. Many high performance systems have been developed, such as cellular systems (AMPS, GSM, TDMA, CDMA, W-CDMA, etc. ), GPS system (global po- tioning system) and WLAN (wireless local area network) systems. The rapid growth of VLSI technology in both digital circuits and analog circuits provides benefits for wireless communication systems. Twenty years ago not many p- ple could imagine millions of transistors in a single chip or a complete radio for size of a penny. Now not only complete radios have been put in a single chip, but also more and more functions have been realized by a single chip and at a much lower price. A radio transmits and receives electro-magnetic signals through the air. The signals are usually transmitted on high frequency carriers. For example, a t- ical voice signal requires only 30 Kilohertz bandwidth. When it is transmitted by a FM radio station, it is often carried by a frequency in the range of tens of megahertz to hundreds of megahertz. Usually a radio is categorized by its carrier frequency, such as 900 MHz radio or 5 GHz radio. In general, the higher the carrier frequency, the better the directivity, but the more difficult the radio design.