Download or read book Chlorine Reactive Ion Beam Etching Studies of Indium containing III V Materials written by Eugene E. Lemoine and published by . This book was released on 1995 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Spectral and Intensity Noise Properties of Long Wavelength Triangular Ring Lasers written by Chen Ji and published by . This book was released on 1999 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book BTL Talks and Papers written by Bell Telephone Laboratories, inc. Technical Information Libraries and published by . This book was released on 1982 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Advanced Plasma Processing Techniques written by R.J. Shul and published by Springer Science & Business Media. This book was released on 2011-06-28 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.
Download or read book Lasers and Photodetectors for High Speed Monolithic Optoelectronics written by Michael Howard Leary and published by . This book was released on 1998 with total page 622 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Reactive Ion Etching of III V Compound Semiconductor Materials written by Ebrahim Andideh and published by . This book was released on 1990 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for reliable fabrication of uniform short period gratings with smooth etched surfaces and excellent stoichiometry in these compounds. Highly anisotropic structures with dimensions down to 300 A at a pitch of 600 A are demonstrated in InP. A selective RIE process for InGaAs on InAlAs in a CH$sb4$:H$sb2$ plasma has been developed and utilized to fabricate 0.26 $mu$m T-gate modulation doped field-effect transistors (MODFETs). The microwave measurements of reactive-ion-etched and wet-etched devices show identical performance. The RIE of GaAs and AlGaAs have been characterized in SiCl$sb4$ plasma chemistry. The optical, electrical and chemical properties of the etched materials have been investigated. The effects of different RIE parameters such as gas chemistry, RF power, and reactor pressure have been studied. The RIE of laser facets in the GaAs/AlGaAs/InGaAs material system and the growth on RIE-patterned GaAs substrates are reported. Selective RIE of GaAs on AlGaAs in SiCl$sb4$/SiF$sb4$ plasma is studied. A selectivity ratio of 350:1 has been obtained at low power. A small decrease in the saturation current of gateless MODFET structures has been observed after etching the GaAs cap layer and has been ascribed to low energy ion bombardment of the surface. This process is applied to the fabrication of 0.2 $mu$m T-gate pseudomorphic MODFETs. The dc and microwave performances of RIE and wet-etched devices are identical. For these short-gatelength devices, a threshold voltage standard deviation of only 30 mV is obtained for the reactive-ion-etched devices as compared to 230 mV for the wet-etched devices. This uniform distribution is essential to the realization of integrated circuits. Surface analysis methods, such as scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and Fourier transform infra-red spectroscopy (FTIR), have been utilized extensively to determine the chemistry of etched surfaces. Raman spectroscopy, Hall carrier mobility measurement and photoluminescence spectroscopy indicate insignificant electrical damage to the materials under optimal RIE conditions. Results of the surface analysis have been used to delineate optimum processes for the fabrication of the above devices.
Download or read book JJAP written by and published by . This book was released on 1998 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2004 with total page 1594 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Bell Laboratories Talks and Papers written by Bell Telephone Laboratories, inc. Libraries and Information Systems Center and published by . This book was released on 1984 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1990 with total page 1036 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 852 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chlorine Reactive Ion Beam Etching of Single Crystal Silicon written by Eugene Eric Krueger and published by . This book was released on 1988 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book NEC Research Development written by and published by . This book was released on 1993 with total page 1078 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2626 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Download or read book New Ternary Alloy Systems for Infrared Detectors written by Antoni Rogalski and published by SPIE Press. This book was released on 1994 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:
