Download or read book Chemical Vapor Deposited Boron Doped Polycrystalline Diamond Thin Film Growth on Silicon and Sapphire Growth Doping Metallization and Characterization written by Hassan Golestanian and published by . This book was released on 1997 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diamond's unique properties are potentially superior among the existing substrate materials for electronic applications. Among these properties, diamond's physical hardness, molar density, thermal conductivity, and sound velocity are the highest while its thermal expansion coefficient, compressibility, and bulk modules are the lowest. Because of this unique combination of properties, diamond has diverse applications in electronics, optics, and material coatings. Scientists around the world have been studying possible applications of diamond and its synthesis by chemical vapor deposition (CVD) in the semiconductor industry for almost the latter half of this century. The use of bulk crystals severely limits semiconductor applications of diamond due to difficulty in doping, device integration, high cost, and small area of bulk diamond. Therefore, a great deal of effort has been undertaken by researchers around the world on diamond synthesis by chemical vapor deposition (CVD). With some of the same limitations, homoepitaxial growth of diamond is not considered to be a feasible solution. As a result, heteroepitaxial growth of diamond is being considered to be an attractive possibility. Heteroepitaxial diamond growth has been the main subject of research since the first successful growth of diamond thin films on foreign substrates was reported. Polycrystalline and highly oriented diamond thin films grown on various substrates, especially silicon, have been reported over the years. There also have been reports of device fabrication on diamond such as diamond based point contact transistors, Schottky diodes, and field effect transistors at a laboratory level. The technology has been very challenging and there remain many obstacles to overcome before diamond based devices are to become part of the semiconductor industry. For example, epitaxial growth of CVD diamond, selective doping, n-type doping, and metallization of the grown films are not totally understood due to the polycrystalline nature of CVD diamond films. The objective of this work is the study of hot-filament chemical vapor deposited boron doped polycrystalline diamond thin films grown on both silicon and sapphire. A new horizontal gas flow configuration rather than the typical vertical gas flow configuration is utilized to provide larger area and better quality films grown on these substrates. The study includes characterization of grown films using scanning electron microscopy, Raman spectroscopy, X-ray diffraction analysis, and electrical characterization. Two types of contacts to the films grown on silicon substrates are fabricated enabling various electrical measurements. However, on sapphire substrates, low volume resistivity diamond films are grown despite severe adhesion problems. The effects of various substrate pre-treatments, growth conditions, and doping concentrations are presented.
Download or read book Growth and Characterization of Diamond Thin Films written by Sattar Mirzakuchaki and published by . This book was released on 1996 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical vapor deposited (CVD) diamond thin films grown homoepitaxially as well as on non-diamond substrates have been the subject of intense investigation since the beginning of the last decade. Diamond's remarkable properties such as physical hardness, chemical inertness, high thermal conductivity, high breakdown voltage, and high carrier mobility are the main factors for the attention it has received from many researchers around the world. Although these properties are somewhat degraded in polycrystalline diamond films, they are still superior to many other materials. One of the most potentially useful applications of diamond thin films is in the semiconductor industry. Although a few prototype devices such as field effect transistors and Schottky diodes have been fabricated on diamond, some major obstacles remain to be overcome before full scale commercial applications of diamond as a semiconductor is possible. The high cost of large area monocrystalline diamond substrates has forced researchers to look for alternative substrates for the heteroepitaxial growth of diamond. So far only marginal results have been reported on the growth of highly oriented diamond films and on the heteroepitaxial growth involving substrates that are as costly as diamond. Silicon, as the dominant material in semiconductor industry, has been the subject of much research as a substrate for the growth of polycrystalline diamond. Another problem in development of diamond as a semiconductor is the effective doping of diamond, particularly for n-type conductivity. Although many researchers have studied boron-doped (p-type) diamond thin films in the past several years, there have been few reports on the effects of doping diamond films with phosphorous (n-type). Once these two issues have been solved, other fabrication steps such as oxidation, etching, masking, etc. may be attempted. The present work is a study directed toward solving some of these problems by looking at in-situ doping of n-type hot filament CVD (HFCVD) grown diamond films on silicon substrates. The study includes electrical characterization, stable metallic contacts, effect of silicon substrate surface pretreatment, and selective area deposition. A number of different techniques for inducing diamond nucleation on Si substrates are studied and the resulting diamond films characterized by common techniques such as Raman spectroscopy, X-ray diffraction, optical and scanning electron microscopy, and profilometery. The effect of doping the diamond films with different concentrations of phosphorous as well as calculation of the activation energy by temperature measurement was also carried out in this work. A new technique is presented for the selective deposition of diamond films onto silicon substrates.
Download or read book Diamond Films written by Koji Kobashi and published by Elsevier. This book was released on 2010-07-07 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses the most advanced techniques for diamond growth Assists diamond researchers in deciding on the most suitable process conditions Inspires readers to devise new CVD (chemical vapor deposition Ever since the early 1980s, and the discovery of the vapour growth methods of diamond film, heteroexpitaxial growth has become one of the most important and heavily discussed topics amongst the diamond research community. Kobashi has documented such discussions with a strong focus on how diamond films can be best utilised as an industrial material, working from the premise that crystal diamond films can be made by chemical vapour disposition. Kobashi provides information on the process and characterization technologies of oriented and heteroepitaxial growth of diamond films.
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1998 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Synthesis Doping and Characterization of Chemical Vapor Deposited Polycrystalline Diamond and Nanostructured Carbon Thin Films for Electronic Applications written by Sanju Gupta and published by . This book was released on 2002 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Applications of CVD Diamond written by Satoshi Koizumi and published by John Wiley & Sons. This book was released on 2008-09-08 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here, leading scientists report on why and how diamond can be optimized for applications in bioelectronic and electronics. They cover such topics as growth techniques, new and conventional doping mechanisms, superconductivity in diamond, and excitonic properties, while application aspects include quantum electronics at room temperature, biosensors as well as diamond nanocantilevers and SAWs. Written in a review style to make the topic accessible for a wider community of scientists working in interdisciplinary fields with backgrounds in physics, chemistry, biology and engineering, this is essential reading for everyone working in environments that involve conventional electronics, biotechnology, quantum computing, quantum cryptography, superconductivity and light emission from highly excited excitonic systems.
Download or read book Chemical Vapor Deposition Growth written by Ralph Powers Ruth and published by . This book was released on 1977 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Phosphorus doped Diamond Films written by Rajat Roychoudhury and published by . This book was released on 1997 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diamond is one of the most technologically and scientifically valuable crystalline solids due to its extraordinary thermal, mechanical, optical, chemical and radiation resistant properties. This uniqueness makes diamond materials of great interest in the field of microelectronics. However, progress in this area has been limited because of difficulties associated with doping, uniformity of polycrystalline films, patterning and inconsistency in reproducibility. For application in electronics, both p- and n-type doping of diamond films must be realized. Both natural and synthetic p-type diamond exists, and boron doping of diamond films (for p-type conductivity) is readily obtainable during chemical vapor deposition. Devices such as field effect transistors and Schottky diodes have been fabricated from such films. However, the development of diamond-based electronic devices has been hindered by the inability to produce reasonably conductive n-type diamond. In this study, we have investigated in situ phosphorus doping of diamond films to obtain n-type conducting diamond films. The diamond films were obtained through hot-filament chemical vapor deposition. The films were identified as good quality polycrystalline diamond through X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The n-type dopant incorporation was established through Secondary Ion Mass Spectroscopy. Both lightly doped (resistive) and heavily doped (well conducting) n-type diamond films were obtained, and their electrical properties were established through Current-Voltage characteristics. The diamond interface characteristics with silicon substrate and metal contacts were studied through Voltage Contrast and Electron Beam Induced Current techniques. Devices such as Schottky diodes were fabricated from these phosphorus doped diamond films. These diamond films were found to be reproducible and their electrical characteristics repeatable, thus, setting a trend towards solving one of the main problems in realizing diamond as a material for the future in the semiconductor industry.
Download or read book Chemical vapor deposition growth written by United States. Department of Energy and published by . This book was released on 1977 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth of Boron doped Diamond Films on Porous Silicon by Microwave Plasma Chemical Vapor Deposition written by and published by . This book was released on 2003 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diamond Thin Films written by Ashok Kumar Dua and published by . This book was released on 2004 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dua, former head of the materials science section at the Bhabha Atomic Research Center in India, examines the past, present, and future of diamond thin films. He details their methods of preparation and characterization, and the mechanisms of nucleation, growth, and epitaxy of CVD diamond. Reactor-scale modeling, in situ diagnostics, and the processing of diamond films are some other topics covered. Concluding chapters look ahead to expected applications, recent developments, and new ideas in the field. There is no subject index. Annotation : 2004 Book News, Inc., Portland, OR (booknews.com).
Download or read book Diamond Chemical Vapor Deposition written by Huimin Liu and published by Elsevier. This book was released on 1996-12-31 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents an updated, systematic review of the latest developments in diamond CVD processes, with emphasis on the nucleation and early growth of diamond CVD. The objective is to familiarize the reader with the scientific and engineering aspects of diamond CVD, and to provide experiences researchers, scientists, and engineers in academia and industry with the latest developments in this growing field.
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deposition of Diamond on Boron doped Si and SiC written by Naomi Naito and published by . This book was released on 1992 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1264 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deposition of Boron Carbide Thin Films by Supersonic Plasma Jet Chemical Vapor Deposition written by Olivier Postel and published by . This book was released on 1998 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
