Download or read book Characterization of the Optoelectronic Properties of Copper Indium Gallium Diselenide Solar Cells Using Measurements on Bifacial Devices and Device Modeling written by David Berney Needleman and published by . This book was released on 2007 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Synthesis and Characterization of Silver Copper Indium Gallium Diselenide Solar Cells on Flexible Substrates written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Preparation and Characterization of Copper Indium Gallium Diselenide Films Used in the Absorber Layers of Thin film Solar Cells written by 陳富珊 and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Preparation and Characterization of Silver Copper Indium Gallium Diselenide Thin film Solar Cells written by 吳俊杰 and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Preparation and Characterization of Copper Indium Gallium Diselenide Powders and Films Used in the Absorber Layer of Thin film Solar Cells written by 吳忠憲 and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Preparation and Characterization of Copper Indium Gallium Diselenide and Copper Zinc Tin Sulfide Powders Used as the Absorber of Thin film Solar Cells written by 林詣軒 and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Design Fabrication and Characterization of Silicon germanium Optoelectronic Devices Grown by Molecular Beam Epitaxy written by Nathan Anthony Sustersic and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, Ge and SiGe devices have been actively investigated for potential optoelectronic applications such as germanium solar cells for long wavelength absorption, quantum-dot intermediate band solar cells (IBSCs), quantum-dot infrared photodetectors (QDIPs) and germanium light-emitting diodes (LEDs). Current research into SiGe based optoelectronic devices is heavily based on nanostructures which employ quantum confinement and is at a stage where basic properties are being studied in order to optimize growth conditions necessary for incorporation into future devices. Ge and SiGe based devices are especially attractive due to ease of monolithic integration with current Si-based CMOS processing technology, longer carrier lifetime, and reduced phonon scattering. Defect formation and transformation was studied in SiGe layers grown on Si and Ge (100) substrates. The epitaxial layers were grown with molecular beam epitaxy (MBE) and characterized by X-ray measurements in order to study the accommodation of elastic strain energy in the layers. The accommodation of elastic strain energy specifies the amount of point defects created on the growth surface which may transform into extended crystalline defects in the volume of the layers. An understanding of crystalline defects in high lattice mismatched epitaxial structures is critical in order to optimize growth procedures so that epitaxial structures can be optimized for specific devices such as Ge based solar cells. Considering the optimization of epitaxial layers based on the structural transformation of point defects, Ge solar cells were fabricated and investigated using current-voltage measurements and quantum efficiency data. These Ge solar cells, optimized for long wavelength absorption, were fabricated to be employed in a bonded Ge/Si solar cell device. The doping of self-assembled Ge quantum dot structures grown on Si (100) was investigated using atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. This is of special interest for Ge quantum dots employed in active device structures where the effect of Ge dot and Si buffer layer doping on structural and luminescence properties must be well understood. Large Ge islands known as "superdomes" were fabricated by MBE and characterized by scanning electron microscopy (SEM), AFM, and Raman spectroscopy. These Ge nanostructures have the potential to become a direct material through band-structure modification by introducing moderate tensile strain into the Ge layer and band-filling. The results of this research on the growth, fabrication, and characterization of SiGe materials, structures, and devices may be useful for applications in the fields of energy, communication, computation, and remote sensing.

Download or read book An Optical and Microstructural Characterization Study and Microstructural Model of Co evaporated Polycrystalline Thin Film Copper Indium Diselenide for Photovoltaic Applications written by John R. Tuttle and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of the Structural and Optical Properties of III V Semiconductor Materials for Solar Cell Applications written by Hongen Xie and published by . This book was released on 2016 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work contained in this dissertation is focused on the structural and optical properties of III-V semiconductor structures for solar cell applications. By using transmission electron microscopy, many of their structural properties have been investigated, including morphology, defects, and strain relaxation. The optical properties of the semiconductor structures have been studied by photoluminescence and cathodoluminescence.Part of this work is focused on InAs quantum dots (QDs) embedded in AlGaAs matrices. This QD system is important for the realization of intermediate-band solar cells, which has three light absorption paths for high efficiency photovoltaics. The suppression of plastic strain relaxation in the QDs shows a significant improvement of the optoelectronic properties. A partial capping followed by a thermal annealing step is used to achieve spool-shaped QDs with a uniform height following the thickness of the capping layer. This step keeps the height of the QDs below a critical value that is required for plastic relaxation. The spool-shaped QDs exhibit two photoluminescence peaks that are attributed to ground and excited state transitions. The luminescence peak width is associated with the QD diameter distribution. An InAs cover layer formed during annealing is found responsible for the loss of the confinement of the excited states in smaller QDs. The second part of this work is focused on the investigation of the InxGa1-xN thin films having different bandgaps for double-junction solar cells. InxGa1-xN films with x 0.15 were grown by metal organic chemical vapor deposition. The defects in films with different indium contents have been studied. Their effect on the optical properties of the film have been investigated by cathodoluminescence. InxGa1-xN films with indium contents higher than 20% were grown by molecular beam epitaxy. The strain relaxation in the films has been measured from electron diffraction patterns taken in cross-sectional TEM specimens. Moiré fringes in some of the films reveal interfacial strain relaxation that is explained by a critical thickness model.

Download or read book Characterization of Laser Doped Silicon and Overcoming Adhesion Challenges of Solar Cells with Nickel Copper Plated Contacts written by Christian Geisler and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Sputter Deposited Zinc Magnesium Alloyed Transparent Conducting Oxides for Copper Indium Gallium Diselenide Solar Cells written by Albert B Hicks (III.) and published by . This book was released on 2014 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: Increased Scherer grain size. A novel figure of merit (FOM) technique is presented as an absolute comparison of TCO performance in terms of CIGS devices. A spectrum-energy integration is performed to quantify the TCO loss into a single optical parameter, which is then combined with the resistivity parameter for the FOM. The TCO FOM is modified to predict the loss of device output power in CIGS as a result of adjusting the TCO. A TCO of graded thickness between the metal contacts offers a reduction in TCO-associated loss in CIGS by approximately 15%.

Download or read book Capacitance Spectroscopy on Copper Indium Diselenide Based Solar Cells written by Verena Mertens and published by . This book was released on 2005 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The influence of gallium on the electronically active defects in copper indium diselenide based solar cells is examined. The aim is to clarify whether any detrimental deep levels are responsible for the only sublinear increase in open circuit voltage with increasing band gap for devices with molar gallium to gallium plus indium ratio (GGI) larger than 0.3. A series of samples with different GGI is investigated using deep level transient and admittance spectroscopy (DLTS and AS). For the solar cells with mixed absorber composition (0 GGI

Download or read book Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In, Ga)Se.sub. 2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Download or read book Fundamentals Of Solar Cells written by Alan Fahrenbruch and published by Elsevier. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Solar Cells: Photovoltaic Solar Energy Conversion provides an introduction to the fundamental physical principles of solar cells. It aims to promote the expansion of solar photovoltaics from relatively small and specialized use to a large-scale contribution to energy supply. The book begins with a review of basic concepts such as the source of energy, the role of photovoltaic conversion, the development of photovoltaic cells, and sequence of phenomena involved in solar power generation. This is followed by separate chapters on each of the processes that take place in solar cell. These include solar input; properties of semiconductors; recombination and the flow of photogenerated carriers; charge separation and the characteristics of junction barriers; and calculation of solar efficiency. Subsequent chapters deal with the operation of specific solar cell devices such as a single-crystal homojunction (Si); a single-crystal-heterojunction/buried-homojunction (AlGaAs/GaAs); and a polycrystalline, thin-film cell (CuxS/CdS). This book is intended for upper-level graduate students who have a reasonably good understanding of solid state physics and for scientists and engineers involved in research and development of solar cells.

Download or read book Spectroscopic Characterization of Surfaces and Interfaces of Gallium rich Chalcopyrite Solar Cell Absorbers with Wet chemical Buffer Layers written by Victor van Maris and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Practical Handbook of Photovoltaics written by Augustin McEvoy and published by Academic Press. This book was released on 2012 with total page 1269 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook opens with an overview of solar radiation and how its energy can be tapped using photovoltaic cells. Other chapters cover the technology, manufacture and application of PV cells in real situations. The book ends by exploring the economic and business aspects of PV systems.

Download or read book Multichannel Spectroscopic Ellipsometry for CdTe Photovoltaics written by Prakash Koirala and published by . This book was released on 2015 with total page 363 pages. Available in PDF, EPUB and Kindle. Book excerpt: Spectroscopic ellipsometry (SE) in the mid-infrared to ultraviolet range has been implemented in order to develop and evaluate optimization procedures for CdTe solar cells at the different stages of fabrication. In this dissertation research, real time SE (RT-SE) has been applied during the fabrication of the as-deposited CdS/CdTe solar cell. Two areas of background research were addressed before undertaking the challenging RT-SE analysis procedures. First, optical functions were parameterized versus temperature for the glass substrate and its overlayers, including three different SnO2 layers. This database has applications not only for RT-SE analysis but also for on-line monitoring of the coated glass itself at elevated temperature. Second, post-deposition modifications of substrate have been studied by infrared spectroscopic ellipsometry (IR-SE) prior to the RT-SE analysis in order to evaluate the need for such modification in the analysis. With support from these background studies, RT-SE has been implemented in analyses of the evolution of the thin film structural properties during sputter deposition of polycrystalline CdS/CdTe solar cells on the transparent conducting oxide (TCO) coated glass substrates. The real time optical spectra collected during CdS/CdTe deposition were analyzed using the optical property database for all substrate components as a function of measurement temperature. RT-SE enables characterization of the filling process of the surface roughness modulations on the top-most SnO2 substrate layer, commonly referred to as the high resistivity transparent (HRT) layer. In this filling process, the optical properties of this surface layer are modified in accordance with an effective medium theory. In addition to providing information on interface formation to the substrate during film growth, RT-SE also provides information on the bulk layer CdS growth, its surface roughness evolution, as well as overlying CdTe interface formation and bulk layer growth. Information from RT-SE at a single point during solar cell stack deposition assists in the development of a model that has been used for mapping the properties of the completed cell stack, which can then be correlated with device performance. Independent non-uniformities in the layers over the full area of the cell stack enable optimization of cell performance combinatorially.The polycrystalline CdS/CdTe thin-film solar cell in the superstrate configuration has been studied by SE using glass side illumination whereby the single reflection from the glass/film-stack interface is collected whereas that from the ambient/glass interface and those from multiple glass/film-stack reflections are rejected. The SE data analysis applies an optical model consisting of a multilayer stack with bulk and interface layers. The dielectric functions ¿¿for the solar cell component materials were obtained by variable-angle and in-situ SE. Variability in the properties of the materials are introduced through free parameters in analytical expressions for the dielectric functions. In the SE analysis of the complete cell, a step-wise procedure ranks all free parameters of the model, including thicknesses and those defining the spectra in¿¿, according to their ability to reduce the root-mean-square deviation between simulated and measured SE spectra. The results for the best fit thicknesses compare well with electron microscopy. From the optical model, including all best-fit parameters, the solar cell quantum efficiency (QE) can be simulated without free parameters, and comparisons with QE measurements have enabled the identification of losses. The capabilities have wide applications in off-line photovoltaic module mapping and in-line monitoring of coated glass at intermediate stages of production. Mapping spectroscopic ellipsometry (M-SE) has been applied in this dissertation research as an optimization procedure for polycrystalline CdS/CdTe solar cell fabrication on TCO coated glass superstrates. During fabrication of these solar cells, the structure undergoes key processing steps after the sputter-deposition of the CdS/CdTe. These steps include CdCl2 treatment of the CdTe layer and subsequent deposition of ultrathin Cu. Additional steps involve final metal back contact layer deposition and an anneal for Cu diffusion that completes the device. In this study, we have fabricated cells with variable absorber thicknesses, ranging from 0.5 to 2.5 ¿m, and variable CdCl2 treatment times, ranging from 5 to 30 min. Because both CdS window and Cu back contact layers are critical for determining device performance, the ability to characterize their deposition processes and determine the resulting process-property-performance relationships is important for device optimization. We have applied M-SE to map the effective thickness (volume/area) of the CdS and Cu films over 15 cm x 15 cm substrates prior to the fabrication of 16 x 16 arrays of dot cells. We report correlations of cell performance parameters with the CdCl2 treatment time and with the effective thicknesses from M-SE analysis. We demonstrate that correlations between optical/structural parameters extracted from M-SE analysis and device performance parameters facilitate process optimization. We have explored and applied p-type semiconducting materials as novel back contact materials in CdTe solar cells. Wide band-gap, p-type doped, hydrogenated amorphous silicon-carbon alloy (a-Si1-xCx:H:B) layers deposited by plasma enhanced chemical vapor deposition (PECVD) under conditions that yield efficient hydrogenated amorphous silicon (a Si:H) p-i-n solar cells have been applied as back contacts to sputter-deposited CdTe superstrate solar cells. We report a maximum observed Voc value of 0.78 V and a best initial efficiency of ~ 7.7 % (relative to an ~ 12% standard cell baseline) without the introduction of Cu into the back contact region. Instability of solar cells that incorporate such back contacts have hindered their further development. We also applied copper indium diselenide (CuInSe2) as a novel back contact material in CdTe solar cells in the superstrate configuration. We report a maximum observed Voc value of 0.68 V and a best efficiency of ~ 6.4 % (relative to an ~ 12.6 % standard cell baseline) without the introduction of Cu.