Download or read book Characterization of the Optical Properties of Gallium Arsenide as a Function of Pump Intensity Using Picosecond Ultrasonics written by Vimal Deepchand and published by . This book was released on 2010 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of the Optical Properties of Aluminum Gallium Arsenide written by Paul John Pearah and published by . This book was released on 1986 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Characterization of Processed Gallium Arsenide written by Ramon Alfredo Carvalho Siochi and published by . This book was released on 1990 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Properties of Gallium Arsenide Phosphide written by and published by . This book was released on 1966 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Properties of Gallium Arsenide phosphide written by George Dee Clark and published by . This book was released on 1966 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Characterization for Semi insulating Gallium Arsenide microform written by Yu Zhang and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1991 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto electronic Devices written by Daming Huang and published by . This book was released on 1990 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis we investigate the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the quenching of excitons by free carriers has been demonstrated. The comparison of the experimental results with calculations which consider phase space filling, screening, and exchange interaction showed the phase space filling to be the dominant mechanism responsible for the change of oscillator strength and binding energy of excitons associated with partially filled subband. On the other hand, the screening and exchange interaction are equally important to excitons associated with empty subbands. For InGaAs/GaAs strained-layer MQWS, we have demonstrated that the band edges are dramatically modified by strain. We determined the band discontinuities at InGaAs/GaAs interfaces using optical absorption, and showed that in this structure the heavy holes are confined in InGaAs layers while the light holes are in GaAs layers, in contrast to GaAs/AlGaAs MQWS. We also explore applications of GaAs/AlGaAs and InGaAs/GaAs MQWS to opto-electronic devices. The principle of devices investigated is mainly based on the electric field effect on the excitonic absorption in MQWS (the quantum confined Stark effect). Two examples presented in this thesis are the strained-layer InGaAs/GaAs MQWS electroabsorption modulators grown on GaAs substrates and the GaAs/AlGaAs MQWS reflection modulators grown on Si substrates. The large modulation observed in the absorption coefficient by an electric field is expected to facilitate opto-electronic integration.

Download or read book Optical Characterization of Bulk Gallium Arsenide Using Fourier Transform Infrared Spectroscopy written by Shangju Yang and published by . This book was released on 1992 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Optical Characterization of Gallium Arsenide Aluminum Arsenide Material System Reflective Modulators for Mid infrared Free Space Optical Applications Using Solid source Molecular Beam Epitaxy written by Stanley Ikpe and published by . This book was released on 2013 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the ever-growing usage of free space optical communication implementations, new innovations are currently being made to help improve the quality of transmission of these systems. One particular method employed to help improve transmission efficiency of optical links is shifting the transmission wavelength into the mid-infrared spectrum. Studies have shown sufficient increase in atmospheric transmission at and around mid-infrared wavelengths (near 3-5 mm). In order to successfully implement such systems at these wavelengths, devices must first be designed that are capable of optical communication operation at such wavelengths. One such device common in modern free space optical systems is the reflective modulator. This device minimizes the pointing and tracking associated with establishing free space optical connections. In this dissertation, a free space optical reflective modulator is designed using Gallium Arsenide and Aluminum Arsenide (GaAs/AlAs) to operate at midinfrared transmission wavelengths. The reflective modulator consists of multiple quantum well modulator (QWM) atop of a distributed Bragg reflector (DBR). The physical device characteristics are analyzed and the device functionality evaluated using optical characterization techniques.

Download or read book Study of Electronic and Optical Properties of Gallium Arsenide Surfaces and Interfaces written by Marko Mykola Gregory Slusarczuk and published by . This book was released on 1979 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Preparation and Optical Properties of Aluminum Gallium Arsenide written by Walter Henry Berninger and published by . This book was released on 1971 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Properties of Nitrogen Doped Gallium Arsenide Under Pressure written by Eric Albert Stinaff and published by . This book was released on 2002 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: We present new insights into the problem of the isoelectronic nitrogen (N) impurity in gallium arsenide (GaAs). By performing photoluminescence (PL), photoluminescence excitation (PLE), transmission, and time decay measurements through a broad range of pressures, we were able to positively identify and track previously unseen states arising from the N impurity. The first observation we make is of a dramatic increase in luminescence as N forms an isolated state within the gap around 22kbar. We attribute this effect to N acting as a nonradiative trapping center while still resonant with the conduction band states. We also note the appearance, above 22kbar, of a broad band-to-acceptor like emission below the band edge, which we associate with a band to N acceptor transition. The next major observation we report is of the excited state of the N[Subscript x] exciton. We find this state to be clearly identifiable for the pressure range [Difference symbol]25kbar to [Difference symbol]30kbar, and is weak in PL, but shows enormous absorption signals in PLE and transmission. The spacing of this level from N[Subscript x]-B is in good agreement with the established theory of shallow acceptor levels. We then move on to the identification of a second bound state associated with N. This state, designated N[Subscript Gamma symbol], was previously reported for the GaP system and the GaAs[Subscript l-x]P[Subscript x] alloy, but has not, until now, been positively identified in GaAs. We find the state to be degenerate with the shallow donor level for pressures up to [Difference symbol]30kbar. The emission from this state is found to possess unique N characteristics and is seen to move in pressure with both shallow and deep like properties. We conclude with a discussion of the process of lasing in N doped GaAs. We present data consistent with previous studies of the lasing process in GaAs. However, we find an intriguing trend with pressure as we approach the [Gamma]-X crossover. The lasing gain begins to shift in a manner similar to N[Subscript Gamma]. In fact, N[Subscript Gamma] appears to act as an upper bound on the laser emission. We believe this to be preliminary evidence of the influence of N on the lasing mechanism.

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of the Gallium Arsenide on Silicon Interface and the Properties of Gallium Arsenide Devices on Silicon written by Keizo Adomi and published by . This book was released on 1990 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Effect of Neutron Transmutation Doping on the Optical Properties of Gallium Arsenide written by Guihua Lu and published by . This book was released on 1988 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Aluminium Gallium Arsenide written by S. Adachi and published by Inst of Engineering & Technology. This book was released on 1993-12 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: AlGaAs is the most widely studied and applied of the ternary semiconductors. An international array of 30 experts have contributed under the editorship of a world authority on AlGaAs, Dr. S. Adachi of Gunma University, Japan. Subjects covered: structural, mechanical, elastic, lattice vibrational and thermal properties; band structure; optical properties; electro-optical properties; carrier transport; surfaces, interfaces and contacts; impurity and defect centres; lattice dislocations, 2D carrier transport, real space transfer band offsets and electro-optic effects in AlGaAs/GaAs heterostructures.